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    TSOP 1378 Search Results

    TSOP 1378 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    R7F701378EAFP Renesas Electronics Corporation High-end Automotive Microcontrollers for Electronic Power Steering Systems Visit Renesas Electronics Corporation
    TPS613783QWRTERQ1 Texas Instruments 18.5-V output, 4.8-A synchronous boost converter with load disconnect 16-WQFN -40 to 125 Visit Texas Instruments Buy
    TPS61378QWRTERQ1 Texas Instruments 18.5-V output, 4.8-A synchronous boost converter with load disconnect 16-WQFN -40 to 125 Visit Texas Instruments
    TPS613785QWRTERQ1 Texas Instruments 18.5-V output, 4.8-A synchronous boost converter with load disconnect 16-WQFN -40 to 125 Visit Texas Instruments Buy

    TSOP 1378 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CY62128VLL-55ZAI

    Abstract: CY62128V CY62128VLL-55SC CY62128VLL-55ZI CY62128VLL-70SC
    Text: 28V CY62128V 128K x 8 Static RAM Features automatic power-down feature, reducing the power consumption by over 99% when deselected. The CY62128V is available in the standard 450-mil-wide SOIC, 32-lead TSOP-I, 32-lead Reverse TSOP-1, and STSOP packages. • High Speed


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    CY62128V CY62128V 450-mil-wide 32-lead CY62128VLL-55ZAI CY62128VLL-55SC CY62128VLL-55ZI CY62128VLL-70SC PDF

    512x 8

    Abstract: CY62128VL-70ZI s34 diode CY62128V CY62128V18 CY62128V25 CY62128VLL70ZAI
    Text: fax id: 1078 Family CY62128V Family 128K x 8 Static RAM Features three-state drivers. These devices have an automatic power-down feature, reducing the power consumption by over 99% when deselected. The CY62128V family is available in the standard 450-mil-wide SOIC, TSOP, and STSOP packages.


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    CY62128V 450-mil-wide CY62128V) CY62128V25) CY62128V18) 512x 8 CY62128VL-70ZI s34 diode CY62128V18 CY62128V25 CY62128VLL70ZAI PDF

    TSOP 1378

    Abstract: 62C1024 IS62LV1024L IS62LV1024LL
    Text: IS62LV1024L IS62LV1024L/LL IS62LV1024LL ISSI 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM FEATURES • Access times of 35, 45, 50, and 70 ns • Low active power: 60 mW typical • Low standby power: 15 µW (typical) CMOS standby • Low data retention voltage: 2V (min.)


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    IS62LV1024L IS62LV1024L/LL IS62LV1024LL IS62LV1024L IS62LV1024LL 072-word IS62LV1024LL-55Q IS62LV1024LL-55T IS62LV1024LL-55H 450-mil TSOP 1378 62C1024 PDF

    TSOP 1378

    Abstract: 45ti 62C1024 IS62LV1024L IS62LV1024LL IS62LV1024LL-70TI
    Text: IS62LV1024L IS62LV1024L/LL IS62LV1024LL ISSI 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM FEATURES • Access times of 35, 45, 50, and 70 ns • Low active power: 60 mW typical • Low standby power: 15 µW (typical) CMOS standby • Low data retention voltage: 2V (min.)


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    IS62LV1024L IS62LV1024L/LL IS62LV1024LL IS62LV1024L IS62LV1024LL 072-word SR014-1C TSOP 1378 45ti 62C1024 IS62LV1024LL-70TI PDF

    CY62128VL-70ZI

    Abstract: CY62128V CY62128V18 CY62128V25 ZA32
    Text: amily CY62128V Family 128K x 8 Static RAM Features LOW Output Enable OE and three-state drivers. These devices have an automatic power-down feature, reducing the power consumption by over 99% when deselected. The CY62128V family is available in the standard 450-mil-wide


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    CY62128V 450-mil-wide 32-lead CY62128V) CY62128V25) CY62128V18) CY62128VL-70ZI CY62128V18 CY62128V25 ZA32 PDF

    CY62128V

    Abstract: CY62128V18 CY62128V25 CY62128V18LL-200ZC
    Text: 28V Family CY62128V Family 128K x 8 Static RAM Features LOW Output Enable OE and three-state drivers. These devices have an automatic power-down feature, reducing the power consumption by over 99% when deselected. The CY62128V family is available in the standard 450-mil-wide


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    CY62128V 450-mil-wide 32-lead CY62128V) CY62128V25) CY62128V18) CY62128V18 CY62128V25 CY62128V18LL-200ZC PDF

    IS62LV1024-35Q

    Abstract: IS62LV1024-35T IS62LV1024-45Q IS62LV1024-45T IS62LV1024-55Q IS62LV1024-55T TSOP 1378
    Text: ISSI ISSI IS62LV1024 IS62LV1024 128K x 8 LOW VOLTAGE AND POWER CMOS STATIC RAM FEATURES • High-speed access time: 35, 45, 55, 70 ns • Low active power: 100 mW typical • Low standby power: 50 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable


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    IS62LV1024 IS62LV1024 072word SR81995LV024 IS62LV1024-35Q IS62LV1024-35T IS62LV1024-45Q IS62LV1024-45T IS62LV1024-55Q IS62LV1024-55T TSOP 1378 PDF

    Untitled

    Abstract: No abstract text available
    Text: IS62WV5128DALL/DBLL, IS65WV5128DALL/DBLL 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEBRUARY 2012 DESCRIPTION The ISSI IS62WV5128DALL / IS62WV5128DBLL are FEATURES • High-speed access time: 35, 45, 55 ns high-speed, 4M bit static RAMs organized as 512K words


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    IS62WV5128DALL/DBLL, IS65WV5128DALL/DBLL IS62WV5128DALL IS62WV5128DBLL PDF

    TSOP 1378

    Abstract: IS62LV1024LL-70T IS62LV1024L IS62LV1024LL IS62LV1024LL-70Q
    Text: IS62LV1024L IS62LV1024L/LL IS62LV1024LL ISSI ISSI 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM FEATURES • Access times of 70 ns and 100 ns • Low active power: 60 mW typical • Low standby power: 15 µW (typical) CMOS standby • Low data retention voltage: 2V (min.)


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    IS62LV1024L IS62LV1024L/LL IS62LV1024LL IS62LV1024L IS62LV1024LL 072-word SR81995LV024L/LL TSOP 1378 IS62LV1024LL-70T IS62LV1024LL-70Q PDF

    DBLL

    Abstract: IS62WV5128DBLL-45HLI IS62WV5128DBLL-45BLI IS62WV5128DALL-55HLI
    Text: IS62WV5128DALL/DBLL, IS65WV5128DALL/DBLL 512K x 8 LOW VOLTAGE, FEBRUARY 2012 ULTRA LOW POWER CMOS STATIC RAM FEATURES DESCRIPTION The ISSI IS62WV5128DALL / IS62WV5128DBLL are • High-speed access time: 35, 45, 55 ns high-speed, 4M bit static RAMs organized as 512K words


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    IS62WV5128DALL/DBLL, IS65WV5128DALL/DBLL IS62WV5128DALL IS62WV5128DBLL IS62WV5128DALL) IS62WV5128DBLL) DBLL IS62WV5128DBLL-45HLI IS62WV5128DBLL-45BLI IS62WV5128DALL-55HLI PDF

    Untitled

    Abstract: No abstract text available
    Text: IS62WV5128DALL/DBLL, IS65WV5128DALL/DBLL 512K x 8 LOW VOLTAGE, MARCH 2011 ULTRA LOW POWER CMOS STATIC RAM ADVANCED INFORMATION FEATURES DESCRIPTION The ISSI IS62WV5128DALL / IS62WV5128DBLL are • High-speed access time: 35, 45, 55 ns high-speed, 4M bit static RAMs organized as 512K words


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    IS62WV5128DALL/DBLL, IS65WV5128DALL/DBLL IS62WV5128DALL IS62WV5128DBLL IS62WV5128DALL) IS62WV5128DBLL) PDF

    IS62LV256

    Abstract: IS62LV256-45J IS62LV256-45T IS62LV256-45U IS62LV256-70RT IS62LV256-70T IS62LV256-70U
    Text: ISSI IS62LV256 32K x 8 LOW VOLTAGE STATIC RAM DECEMBER 2002 FEATURES DESCRIPTION • Access time: 45, 70 ns • Low active power: 70 mW • Low standby power — 45 µW CMOS standby • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs


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    IS62LV256 IS62LV256 768-word IS62LV256-45J IS62LV256-45U IS62LV256-45T 300-MIL 330-MIL IS62LV256-70U IS62LV256-70T IS62LV256-45J IS62LV256-45T IS62LV256-45U IS62LV256-70RT IS62LV256-70T IS62LV256-70U PDF

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS62LV1024LL 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM OCTOBER 2000 FEATURES DESCRIPTION • Access times of 45, 55, and 70 ns • Low active power: 60 mW typical • Low standby power: 15 µW (typical) CMOS standby • Low data retention voltage: 2V (min.)


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    IS62LV1024LL 32-pin 32-pin 450-mil IS62LV1024LL 072-word high2LV1024LL-70H IS62LV1024LL-45QI IS62LV1024LL-45TI PDF

    TSOP 1378

    Abstract: IS62LV256 IS62LV256-45J IS62LV256-45N IS62LV256-45T IS62LV256-45U IS62LV256-70J IS62LV256-70N IS62LV256-70T
    Text: ISSI ISSI IS62LV256 IS62LV256 32K x 8 LOW VOLTAGE STATIC RAM FEATURES ® JULY 1996 DESCRIPTION The ISSI IS62LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSI's • Access time: 45, 70, 100 ns • Low active power: 70 mW


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    IS62LV256 IS62LV256 768-word LV256-70T IS62LV256-70U 300-mil 330-mil IS62LV256-70NI TSOP 1378 IS62LV256-45J IS62LV256-45N IS62LV256-45T IS62LV256-45U IS62LV256-70J IS62LV256-70N IS62LV256-70T PDF

    A12C

    Abstract: A14C A15C CY62128V CY62128V18 CY62128V25
    Text: fax id: 1 078 CY62128V Family 128K x 8 Static RAM Features three -state drivers. T hese devices have an au tom atic pow er-dow n feature, reducing the pow er con sum p tion by ove r 99% w h en de selected. T he C Y 6 21 28V fam ily is available in the stan dard 4 5 0 -m il-w id e SOIC, TSOP, and S T S O P packages.


    OCR Scan
    CY62128V) CY62128V25) CY62128V18) CY62128V A12C A14C A15C CY62128V18 CY62128V25 PDF

    Untitled

    Abstract: No abstract text available
    Text: IS62LV1024L IS62LV1024LL — 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM a d v a n c e in f o r m a t io n FEBRUARY 1997 FEATURES DESCRIPTION • Access times of 35, 45, 55, and 70 ns T he I S S I IS 62LV 1024L and IS62LV 1024LL are low pow er and low Vcc, 1 31,072-word by 8-bit C M O S static RAM s. T hey


    OCR Scan
    IS62LV1024L IS62LV1024LL 1024L IS62LV 1024LL 072-word LV1024LL-45Q IS62LV1024LL-45T IS62LV1024LL-55Q IS62LV1024LL-55T PDF

    IS62LV1024

    Abstract: No abstract text available
    Text: IS62LV1024L IS62LV1024LL m â 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM PRELIMINARY SEPTEMBER 1998 FEATURES DESCRIPTION • Access times of 35, 45, 50, and 70 ns The IS62LV1024L and IS62LV1024LL are low power and low Vcc, 131,072-word by 8-bit CMOS static RAMs. They


    OCR Scan
    IS62LV1024L IS62LV1024LL IS62LV1024LL 072-word IS62LV1024LL-35QI IS62LV1024LL-35TI IS62LV1024LL-35HI IS62LV1024LL-45QI IS62LV1024LL-45TI IS62LV1024 PDF

    TSOP 1378

    Abstract: 62C1024
    Text: IS62LV1024L IS62LV1024LL ISSI 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM p r e l im in a r y AUGUST 1997 FEATURES DESCRIPTION • A c c e s s tim e s of 35, 45, 50, and 70 ns The IS S IIS62LV1024L and IS62LV1024LL are low power and low Vcc, 131,072-word by 8-bit CMOS static RAMs. They


    OCR Scan
    IS62LV1024L IS62LV1024LL IS62LV1024LL 072-word 450-mil IS62LV1024LL-35QI IS62LV1024LL-35TI IS62LV1024LL-35TSI TSOP 1378 62C1024 PDF

    chn 45L

    Abstract: No abstract text available
    Text: IS62LV1024L IS62LV1024LL ISSI 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM PRELIMINARY SEPTEMBER 1998 FEATURES DESCRIPTION • A c c e s s tim e s o f 3 5 , 4 5 , 5 0 , a n d 7 0 ns • L o w a c tiv e p o w e r: 6 0 m W ty p ic a l • L o w s ta n d b y p o w e r: 15 fiW (ty p ic a l) C M O S


    OCR Scan
    IS62LV1024L IS62LV1024LL 1024L 1024LL V24LL-55HI IS62LV1024LL-70QI IS62LV1024LL-70TI IS62LV1024LL-70HI 450-mil chn 45L PDF

    IS62LV1024L

    Abstract: IS62LV1024LL TSOP 1378
    Text: IS62LV1024L IS62LV1024LL 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM PRELIMINARY SEPTEMBER 1998 DESCRIPTION FEATURES • A c c e s s tim e s o f 3 5 , 4 5 , 5 0 , a n d 7 0 ns • L o w a c tiv e p o w e r: 6 0 m W ty p ic a l • L o w s ta n d b y p o w e r: 15


    OCR Scan
    IS62LV1024L IS62LV1024LL ISSIIS62LV1024L IS62LV1024LL 072-word IS62LV1024LL-35QI IS62LV1024LL-35TI IS62LV1024LL-35HI 450-mil IS62LV1024LL-45QI TSOP 1378 PDF

    PK131

    Abstract: No abstract text available
    Text: IS62LV1024L IS62LV1024LL ISSI 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM p r e l im in a r y OCTOBER 1997 FEATURES DESCRIPTION • Access times of 35, 45, 50, and 70 ns The IS S IIS62LV1024L and IS62LV1024LL are low power and low Vcc, 131,072-word by 8-bit CMOS static RAMs. They


    OCR Scan
    IS62LV1024L IS62LV1024LL IS62LV1024LL 072-word PK13197TS32 TGG4404 PK131 PDF

    Untitled

    Abstract: No abstract text available
    Text: 128K x 8 LOW VOLTAGE AND POWER CMOS STATIC RAM NOVEMBER 1996 FEATURES DESCRIPTION • High-speed access time: 35, 45, 55, 70 ns The/557 IS62LV1024 is a low voltage and low power, 131,072word by 8-bit CMOS static RAM. It is fabricated using /5 5 /'s high-performance CMOS technology. This highly reliable pro­


    OCR Scan
    ISSIIS62LV1024 072-word PK13197T32 TQD4404 D0G0S53 PDF

    Untitled

    Abstract: No abstract text available
    Text: 128K x 8 LOW VOLTAGE AND POWER CMOS STATIC RAM NOVEMBER 1996 FEATURES DESCRIPTION • H igh-speed access tim e: 35, 45, 55, 70 ns The/557 IS62LV1024 is a low voltage and low power, 131,072word by 8-bit CMOS static RAM. It is fabricated using /5 5 /'s high-performance CMOS technology. This highly reliable pro­


    OCR Scan
    The/557 IS62LV1024 072word PK13197T32 T0D4404 D000553 PDF

    IS62LV1024-45Q

    Abstract: IS62LV1024-55Q 12130
    Text: 128K x 8 LOW VOLTAGE AND POWER CMOS STATIC RAM NOVEMBER 1996 FEATURES DESCRIPTION • H igh-speed access tim e: 35, 45, 55, 70 ns The/557 IS62LV1024 is a low voltage and low power, 131,072word by 8-bit CMOS static RAM. It is fabricated using /5 5 /'s high-performance CMOS technology. This highly reliable pro­


    OCR Scan
    ISSIIS62LV1024 072-word PK13197T32 T004404 IS62LV1024-45Q IS62LV1024-55Q 12130 PDF