PK13197T32 Search Results

Contextual Info: ISSI IS29F010 1 MEGABIT 128K x 8-bit CMOS, 5.0V Only Sectored Flash Memory p r e l im in a r y O c t o b e r 1998 FEATURES • High-performance CMOS - 35, 45, 55, 70, and 90 ns max. access time • Single 5V-only power supply - 5V ± 10% for Read, Program, and Erase

Contextual Info: ISSI PACKAGING INFORMATION Plastic TSOP - 32 pins Package Code: T Type I 1 E H N D SEATING PLANE A S B e Symbol Ref. Std. No. Leads A A1 B C D E H e L α α C Plastic TSOP (T—Type I) Millimeters Inches Min Max Min Max 32 — 1.20 0.05 0.25 0.17 0.23 0.12

PK131

Contextual Info: IS62LV1024L IS62LV1024LL ISSI 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM p r e l im in a r y OCTOBER 1997 FEATURES DESCRIPTION • Access times of 35, 45, 50, and 70 ns The IS S IIS62LV1024L and IS62LV1024LL are low power and low Vcc, 131,072-word by 8-bit CMOS static RAMs. They

62WV5128ALL

Abstract: IS62WV5128ALL IS62WV5128ALL-70H IS62WV5128ALL-70T IS62WV5128ALL-70T2 IS62WV5128ALL-70TI IS62WV5128BLL
Contextual Info: IS62WV5128ALL IS62WV5128BLL ISSI 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM APRIL 2003 FEATURES DESCRIPTION • High-speed access time: 55ns, 70ns The ISSI IS62WV5128ALL / IS62WV5128BLL are highspeed, 4M bit static RAMs organized as 512K words by 8

Contextual Info: 128K x 8 LOW VOLTAGE AND POWER CMOS STATIC RAM NOVEMBER 1996 FEATURES DESCRIPTION • High-speed access time: 35, 45, 55, 70 ns The/557 IS62LV1024 is a low voltage and low power, 131,072word by 8-bit CMOS static RAM. It is fabricated using /5 5 /'s high-performance CMOS technology. This highly reliable pro­

IS62LV1024-45Q

Abstract: IS62LV1024-55Q 12130
Contextual Info: 128K x 8 LOW VOLTAGE AND POWER CMOS STATIC RAM NOVEMBER 1996 FEATURES DESCRIPTION • H igh-speed access tim e: 35, 45, 55, 70 ns The/557 IS62LV1024 is a low voltage and low power, 131,072word by 8-bit CMOS static RAM. It is fabricated using /5 5 /'s high-performance CMOS technology. This highly reliable pro­

Contextual Info: IS62WV1288ALL IS62WV1288BLL ISSI 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM PRELIMINARY INFORMATION APRIL 2003 FEATURES DESCRIPTION • High-speed access time: 45ns, 55ns The ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed, 1M bit static RAMs organized as 128K words by 8

Contextual Info: ISSI IS28LV020 262,144 X 1 8 CMOS FLASH MEMORY ADVANCE INFORMATION APRIL 1997 FEATURES • High perform ance - Pow er supply voltage 3 V ± 10% - 90 ns, 120 ns m axim um access time • C M O S low pow er consumption - 30 mA m axim um active current - 1 0 0 nA m axim um standby current

Contextual Info: ISSI IS27LV020 262,144 X 8 HIGH-SPEED, LOW VOLTAGE CMOS EPROM ADVANCE INFORMATION JULY 1996 FEATURES DESCRIPTION • Fast read access time: 90 ns • Industrial and commercial temperature ranges available • 5V ±10% or 2.7V to 3.6V power supply tolerance

Contextual Info: 128K x 8 LOW VOLTAGE AND POWER CMOS STATIC RAM NOVEMBER 1996 FEATURES DESCRIPTION • H igh-speed access tim e: 35, 45, 55, 70 ns The/557 IS62LV1024 is a low voltage and low power, 131,072word by 8-bit CMOS static RAM. It is fabricated using /5 5 /'s high-performance CMOS technology. This highly reliable pro­

Contextual Info: IS27LV010 ISSI 131,072 X 8 LOW VOLTAGE CMOS EPROM FEATURES DESCRIPTION • Single 3.3V power supply The ISSI IS27LV010 is a low voltage, low power, high-speed 1 megabit 128K-word by 8-bit Ultraviolet Erasable CMOS Programmable Read-Only Memory. It utilizes the standard