TSM4872 Search Results

TSM4872 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
TSM4872		Taiwan Semiconductor	30V N-Channel MOSFET		Original	PDF
TSM4872CSRL		Taiwan Semiconductor	30V N-Channel MOSFET		Original	PDF

TSM4872 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
27BSC Abstract: TSM4872 Contextual Info: TSM4872 Preliminary 30V N-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain 30 Features ID (A) 7.5 @ VGS = 10V 15 10 @ VGS = 4.5V 13 Block Diagram ● Advance Trench Process Technology	Original	TSM4872 TSM4872CS 27BSC TSM4872	PDF
n-channel mosfet transistor Abstract: 27BSC TSM4872 Contextual Info: TSM4872 30V N-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain 30 ID (A) 7.5 @ VGS =10V 15 10 @ VGS 4.5V 13 Block Diagram Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance	Original	TSM4872 TSM4872CS n-channel mosfet transistor 27BSC TSM4872	PDF
Contextual Info: TSM4872 30V N-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(m) Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain 30 ID (A) 7.5 @ VGS =10V 15 10 @ VGS 4.5V 13 Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance	Original	TSM4872 TSM4872CS	PDF

Catalog Datasheet

Type

Document Tags

PDF

27BSC

Abstract: TSM4872
Contextual Info: TSM4872 Preliminary 30V N-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain 30 Features ID (A) 7.5 @ VGS = 10V 15 10 @ VGS = 4.5V 13 Block Diagram ● Advance Trench Process Technology

Original

TSM4872 TSM4872CS 27BSC TSM4872

PDF

n-channel mosfet transistor

Abstract: 27BSC TSM4872
Contextual Info: TSM4872 30V N-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain 30 ID (A) 7.5 @ VGS =10V 15 10 @ VGS 4.5V 13 Block Diagram Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

Original

TSM4872 TSM4872CS n-channel mosfet transistor 27BSC TSM4872

PDF

Contextual Info: TSM4872 30V N-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(m) Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain 30 ID (A) 7.5 @ VGS =10V 15 10 @ VGS 4.5V 13 Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance

Original

TSM4872 TSM4872CS

PDF