TSM12N02CP Search Results

TSM12N02CP Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
TSM12N02CP		Taiwan Semiconductor	N-Channel Enhancement Mode MOSFET		Original	PDF
TSM12N02CP		Taiwan Semiconductor	20V N-Channel MOSFET		Original	PDF

TSM12N02CP Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SOT-252 Abstract: SOT-252 20v SOT252 18BSC TSM12N02 TSM12N02CP Text: TSM12N02 20V N-Channel MOSFET TO-252 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 20 Features ● ● ID (A) 30 @ VGS = 10V 8 40 @ VGS = 4.5V 6 Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance	Original	PDF	TSM12N02 O-252 TSM12N02CP SOT-252 SOT-252 20v SOT252 18BSC TSM12N02
TSM12N02 Abstract: TSM12N02CP Text: TSM12N02 N-Channel Enhancement Mode MOSFET VDS = 20V Pin assignment: 1. Gate 2. Drain 3. Source ID = 12A RDS on , Vgs @ 10V, Ids@8A = 30mΩ RDS (on), Vgs @ 4.5V, Ids@6A = 40mΩ Features     Low gate charge  High Density Cell Design for Ultra Low On-Resistance 	Original	PDF	TSM12N02 TSM12N02CP O-252 300uS, O-252 TSM12N02 TSM12N02CP

Catalog Datasheet

MFG & Type

PDF

Document Tags

SOT-252

Abstract: SOT-252 20v SOT252 18BSC TSM12N02 TSM12N02CP
Text: TSM12N02 20V N-Channel MOSFET TO-252 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 20 Features ● ● ID (A) 30 @ VGS = 10V 8 40 @ VGS = 4.5V 6 Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance

Original

PDF

TSM12N02 O-252 TSM12N02CP SOT-252 SOT-252 20v SOT252 18BSC TSM12N02

TSM12N02

Abstract: TSM12N02CP
Text: TSM12N02 N-Channel Enhancement Mode MOSFET VDS = 20V Pin assignment: 1. Gate 2. Drain 3. Source ID = 12A RDS on , Vgs @ 10V, Ids@8A = 30mΩ RDS (on), Vgs @ 4.5V, Ids@6A = 40mΩ Features     Low gate charge  High Density Cell Design for Ultra Low On-Resistance 