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    TSM12N02CP Search Results

    TSM12N02CP Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TSM12N02CP Taiwan Semiconductor N-Channel Enhancement Mode MOSFET Original PDF
    TSM12N02CP Taiwan Semiconductor 20V N-Channel MOSFET Original PDF

    TSM12N02CP Datasheets Context Search

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    SOT-252

    Abstract: SOT-252 20v SOT252 18BSC TSM12N02 TSM12N02CP
    Text: TSM12N02 20V N-Channel MOSFET TO-252 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 20 Features ● ● ID (A) 30 @ VGS = 10V 8 40 @ VGS = 4.5V 6 Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM12N02 O-252 TSM12N02CP SOT-252 SOT-252 20v SOT252 18BSC TSM12N02

    TSM12N02

    Abstract: TSM12N02CP
    Text: TSM12N02 N-Channel Enhancement Mode MOSFET VDS = 20V Pin assignment: 1. Gate 2. Drain 3. Source ID = 12A RDS on , Vgs @ 10V, Ids@8A = 30mΩ RDS (on), Vgs @ 4.5V, Ids@6A = 40mΩ Features     Low gate charge  High Density Cell Design for Ultra Low On-Resistance 


    Original     		PDF TSM12N02 TSM12N02CP O-252 300uS, O-252 TSM12N02 TSM12N02CP