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    Taiwan Semiconductor TSM052N06PQ56-RLG

    MOSFET N-CH 60V 100A 8PDFN
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    DigiKey TSM052N06PQ56-RLG Digi-Reel 1
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    TSM052N06PQ56 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TSM052N06PQ56 RLG Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 100A 8PDFN Original PDF

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    N-Channel

    Abstract: No abstract text available
    Text: TSM052N06PQ56 60V N-Channel MOSFET PDFN56 Key Parameter Performance Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Parameter Value Unit VDS 60 V RDS on (max) 5.2 mΩ Qg 50 nC Features Block Diagram ● Low On-Resistance


    Original     		PDF TSM052N06PQ56 PDFN56 TSM052N06PQ56 900ppm 1500ppm 1000ppm N-Channel