TS808C Search Results

Contextual Info: TS808C04 30A (40V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching

Contextual Info: TS808C04 30A (40V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching

Contextual Info: TS808C04 30A (40V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching

TS808C06

Abstract: ts808c
Contextual Info: TS808C06 3 oa '• O utline D raw ings SCHOTTKY BARRIER DIODE 4.5 int 132 I n t I ?:4 2.7 JEDEC : Features EIA J S urface m o u n t device. • X fc T -K *# # tjf c l' C on n e ctio n D iagram S u p e r high speed s w itc h in g . H igh reliab ility by p lan er d e sig n .

TS808C04

Contextual Info: TS808C04 30 a SCHOTTKY BARRIER DIODE I Features Surface m ount device• i& V F Low V f • V S S fk • TAv+'s'fTX.-YWyflk l l & l ' Connection Diagram Super high speed sw itching. High reliability by planer d e s ig n . w\ ■ E I & ’ Applications C)

30A high speed diode

Contextual Info: TS808C04 30 a '> 3 * y l) 7 ? *< t — K SCHOTTKY BARRIER DIODE : Features Surface m ount device- • i£ V F Low V f Connection Diagram Super high speed sw itching. •yu—t -ttwus Aiiffitt High reliability by planer design. : Applications High speed power sw itching.

Contextual Info: TS808C06 30A (60V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching

Contextual Info: TS808C06 30A U Outline Drawing SCHOTTKY BARRIER DIODE 4.5 0.18) 1.32 (0.05) h 3 o ,o o ^ «o 0.4 ( 0 . 02 ) ( 0 . 20) • Features 2.7 ( 0 . 11) Connection Diagram • Surface mount device • Lo w V f • Super high speed switching • High reliability by planer design

Contextual Info: http://www.fujisemi.com TS808C06R-TE24R FUJI Diode Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings at Ta=25˚C unless otherwise specified. Item Symbols Repetitive peak reverse voltage Average output current Non-repetitive forward surge current*

Contextual Info: TS808C04 30A (40V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching

H125

Abstract: TS808C06 a514 ba 513 diode
Contextual Info: TS808C06 3 oa SCHOTTKY BARRIER DIODE i Features Surface m ount device. m nm & m C onnection Diagram Super high speed sw itchin g. mk • fcl rf High reliability by planer design. • f f l i i ! ! A pplications iD () G) H igh speed p ow er sw itch in g .

Contextual Info: TS808C06 30A (60V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching

Contextual Info: TS808C06 30A (60V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching

TS808C04

Abstract: A512
Contextual Info: TS808C04 30 a SCHOTTKY BARRIER DIODE I Features Surface m ount device- • i&VF Low V f • V S S fk • T A v + 's 'fT X .- Y W y flk ll&l' Connection Diagram Super high speed sw itching. High reliability by planer d e s ig n . w\ ■ E I & ’ Applications

DES-8

Contextual Info: TS808C06 30A (60V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching

30A high speed diode

Abstract: TS808C04
Contextual Info: _ TS808C04 30A SCHOTTKY BARRIER DIODE • Outline Drawing I Features • Surface mount device • Lo w V f • Super high speed switching • High reliability by planer design I Applications • High speed power switching ■ Maximum Ratings & Characteristics

Diode GP 514

Abstract: H125 T760 T810 TS808C06
Contextual Info: TS808C06 3 oa : Outline Drawings SCHOTTKY BARRIER DIODE — k?2 oa T 2.7 JEDEC : Features EIAJ Surface m ount device. m nm & m Connection Diagram S uper high speed sw itch in g . • 7 V - ; r H i f f i li Jr* fc 1 S 8 H ± High reliability by planer design

TS808C04

Contextual Info: TS808C04 30A (40V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching

30A high speed diode

Abstract: TS808C06
Contextual Info: TS808C06 30A SCHOTTKY BARRIER DIODE • Outline Drawing H Features • Surface mount device • Lo w V f • Super high speed switching • High reliability by planer design I Applications • High speed power switching ■ Maximum Ratings & Characteristics

S3L DIODE schottky

Abstract: DIODE s3l diode S3L 77 TS808C04 s3l 02 diode S3L 15 diode
Contextual Info: TS808C04I30A •K SCHOTTKY BARRIER DI IDE ■ ft ^ Features Surface mount device• 1fcVF Low V f wc C o n n e c tio n D iagram Super high speed switching. • y u —t— High reliability by planer design : A p p lic a tio n s High speed power switching.

Contextual Info: TS808C04 30A • Outline Drawing S C H O T T K Y B A R R IE R D IO D E o ^ iv— o .< ( 0 . 20 ) 2) 1 .0(0.04) 4.5 (0.18) ' 1.32(0.05) CO /-i (0 .0 2 ) 2 .7 (0.1 1 ) ■ Features Connection Diagram • Surface mount device • Lo w V f • Super high speed switching

TS808C06

Contextual Info: TS808C06 30A (60V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

TS808C04

Abstract: ts808c WAAI
Contextual Info: T S 808C 04 3 oa ' > 3 'y h + — V T ¥ 4 si'i'tjm-F K SCHOTTKY BARRIER DIODE l Features • "JS6 Surface m ount device. • te V F Low V f • m m m m Wy? F *< *1=# t i & i . ' C on nection D iagram Super high speed sw itching. • 7 V -*'-a w e « *« utt