Untitled
Abstract: No abstract text available
Text: TS808C04 30A (40V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching
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TS808C04
500ns,
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PDF
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Untitled
Abstract: No abstract text available
Text: TS808C04 30A (40V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching
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Original
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TS808C04
500ns,
25ature
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PDF
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Untitled
Abstract: No abstract text available
Text: TS808C04 30A (40V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching
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Original
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TS808C04
500ns,
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PDF
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Untitled
Abstract: No abstract text available
Text: TS808C06 30A (60V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching
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TS808C06
500ns,
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PDF
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Untitled
Abstract: No abstract text available
Text: http://www.fujisemi.com TS808C06R-TE24R FUJI Diode Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings at Ta=25˚C unless otherwise specified. Item Symbols Repetitive peak reverse voltage Average output current Non-repetitive forward surge current*
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TS808C06R-TE24R
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PDF
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Untitled
Abstract: No abstract text available
Text: TS808C04 30A (40V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching
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Original
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TS808C04
500ns,
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PDF
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Untitled
Abstract: No abstract text available
Text: TS808C06 30A (60V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching
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Original
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TS808C06
500ns,
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PDF
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Untitled
Abstract: No abstract text available
Text: TS808C06 30A (60V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching
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Original
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TS808C06
500ns,
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PDF
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DES-8
Abstract: No abstract text available
Text: TS808C06 30A (60V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching
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Original
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TS808C06
500ns,
DES-8
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PDF
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TS808C04
Abstract: No abstract text available
Text: TS808C04 30A (40V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching
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Original
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TS808C04
500ns,
TS808C04
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PDF
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TS808C06
Abstract: No abstract text available
Text: TS808C06 30A (60V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching
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Original
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TS808C06
500ns,
TS808C06
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PDF
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SMD Transistors w04 sot-23
Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.
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represent9-14
SMD Transistors w04 sot-23
transistor SOT-23 w04
SB050 transistor
IN4728A
mosfet SMD w04
SN30SC4
smd diode code gs1m
W01 SMD mosfet
W04 sot 23
1s355
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PDF
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TS808C06
Abstract: ts808c
Text: TS808C06 3 oa '• O utline D raw ings SCHOTTKY BARRIER DIODE 4.5 int 132 I n t I ?:4 2.7 JEDEC : Features EIA J S urface m o u n t device. • X fc T -K *# # tjf c l' C on n e ctio n D iagram S u p e r high speed s w itc h in g . H igh reliab ility by p lan er d e sig n .
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OCR Scan
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TS808C06
500ns,
ts808c
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PDF
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TS808C04
Abstract: No abstract text available
Text: TS808C04 30 a SCHOTTKY BARRIER DIODE I Features Surface m ount device• i& V F Low V f • V S S fk • TAv+'s'fTX.-YWyflk l l & l ' Connection Diagram Super high speed sw itching. High reliability by planer d e s ig n . w\ ■ E I & ’ Applications C)
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OCR Scan
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TS808C04
500ns,
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PDF
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Untitled
Abstract: No abstract text available
Text: TS808C06 30A U Outline Drawing SCHOTTKY BARRIER DIODE 4.5 0.18) 1.32 (0.05) h 3 o ,o o ^ «o 0.4 ( 0 . 02 ) ( 0 . 20) • Features 2.7 ( 0 . 11) Connection Diagram • Surface mount device • Lo w V f • Super high speed switching • High reliability by planer design
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OCR Scan
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TS808C06
500ns,
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PDF
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H125
Abstract: TS808C06 a514 ba 513 diode
Text: TS808C06 3 oa SCHOTTKY BARRIER DIODE i Features Surface m ount device. m nm & m C onnection Diagram Super high speed sw itchin g. mk • fcl rf High reliability by planer design. • f f l i i ! ! A pplications iD () G) H igh speed p ow er sw itch in g .
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OCR Scan
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TS808C06
500ns,
H125
a514
ba 513 diode
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PDF
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TS808C04
Abstract: A512
Text: TS808C04 30 a SCHOTTKY BARRIER DIODE I Features Surface m ount device- • i&VF Low V f • V S S fk • T A v + 's 'fT X .- Y W y flk ll&l' Connection Diagram Super high speed sw itching. High reliability by planer d e s ig n . w\ ■ E I & ’ Applications
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OCR Scan
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TS808C04
500ns,
A512
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PDF
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H125
Abstract: TS808C06
Text: TS808C06 3 oa SCHOTTKY BARRIER DIODE i Features Surface m ount device. m nm & m C onnection Diagram Super high speed sw itchin g. mk • fcl rf High reliability by planer design. • f f l i i ! ! A pplications iD () G) H igh speed p ow er sw itch in g .
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OCR Scan
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TS808C06
500ns,
H125
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PDF
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30A high speed diode
Abstract: TS808C04
Text: _ TS808C04 30A SCHOTTKY BARRIER DIODE • Outline Drawing I Features • Surface mount device • Lo w V f • Super high speed switching • High reliability by planer design I Applications • High speed power switching ■ Maximum Ratings & Characteristics
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OCR Scan
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TS808C04
500ns,
30A high speed diode
TS808C04
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PDF
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Diode GP 514
Abstract: H125 T760 T810 TS808C06
Text: TS808C06 3 oa : Outline Drawings SCHOTTKY BARRIER DIODE — k?2 oa T 2.7 JEDEC : Features EIAJ Surface m ount device. m nm & m Connection Diagram S uper high speed sw itch in g . • 7 V - ; r H i f f i li Jr* fc 1 S 8 H ± High reliability by planer design
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OCR Scan
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TS808C06
500ns,
JII15
41-l231
95t/R89
Shl50
Diode GP 514
H125
T760
T810
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PDF
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30A high speed diode
Abstract: TS808C06
Text: TS808C06 30A SCHOTTKY BARRIER DIODE • Outline Drawing H Features • Surface mount device • Lo w V f • Super high speed switching • High reliability by planer design I Applications • High speed power switching ■ Maximum Ratings & Characteristics
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OCR Scan
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TS808C06
500ns,
30A high speed diode
TS808C06
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PDF
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S3L DIODE schottky
Abstract: DIODE s3l diode S3L 77 TS808C04 s3l 02 diode S3L 15 diode
Text: TS808C04I30A •K SCHOTTKY BARRIER DI IDE ■ ft ^ Features Surface mount device• 1fcVF Low V f wc C o n n e c tio n D iagram Super high speed switching. • y u —t— High reliability by planer design : A p p lic a tio n s High speed power switching.
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OCR Scan
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TS808C04
500ns,
S3L DIODE schottky
DIODE s3l
diode S3L 77
s3l 02 diode
S3L 15 diode
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PDF
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Untitled
Abstract: No abstract text available
Text: TS808C04 30A • Outline Drawing S C H O T T K Y B A R R IE R D IO D E o ^ iv— o .< ( 0 . 20 ) 2) 1 .0(0.04) 4.5 (0.18) ' 1.32(0.05) CO /-i (0 .0 2 ) 2 .7 (0.1 1 ) ■ Features Connection Diagram • Surface mount device • Lo w V f • Super high speed switching
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OCR Scan
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TS808C04
500ns,
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PDF
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TS808C04
Abstract: ts808c WAAI
Text: T S 808C 04 3 oa ' > 3 'y h + — V T ¥ 4 si'i'tjm-F K SCHOTTKY BARRIER DIODE l Features • "JS6 Surface m ount device. • te V F Low V f • m m m m Wy? F *< *1=# t i & i . ' C on nection D iagram Super high speed sw itching. • 7 V -*'-a w e « *« utt
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OCR Scan
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TS808C04
500ns,
0D0b45fci
11-lili
ts808c
WAAI
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PDF
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