TS802C09 Search Results

a467

Abstract: TS802C09 ts802c PUAR
Contextual Info: TS802C09< ioa SCHOTTKY BARRIER DIODE Features • »»*#1*^116 Surface mount device. • 1fcVF Low VF • X-f Xl£-KA *#*i:3fc\,' Super high speed switching. •w s& s* Connection Diagram • TV-*- Jt t f t f l MRt t High reliability by planer design. ■ £ ! & : Applications

TS802C09

Abstract: ze 003 ic
Contextual Info: TS802C09 10A SCHOTTKY BARRIER DIODE I Outline Drawing • Features Connection Diagram • Surface mount device • Lo w V f • Super high speed switching • High reliability by planer design H Applications • High speed power switching ■ Maximum Ratings & Characteristics

TS802C09

Abstract: Collmer SC
Contextual Info: TS802C09< ioa SCHOTTKY BARRIER DIODE Features • »»*#1*^116 Surface mount device. • 1fcVF Low VF • X-f Xl£-KA *#*i:3fc\,' •w s& s* Connection Diagram Super high speed switching. • TV-*- Jt t f t f l MRt t High reliability by planer design. ■ £ ! & : Applications

Contextual Info: Schottky-Barrier Diodes Dual package Ratings and characteristics Maximum rating Vrrm lo *1 TS802C06 TS802C09 TP802C04 TP802C06 TP802C09 ESAC82-004 ESAC82M-004 O II CO ^1 5.0 Mass Grams Fig. No. Irrm * 3 Max. mA Dimensions -40 t o +125 0.55 If=2.5A 5.0 0.6

a465

Contextual Info: TS802C09 ioa >3 SCHOTTKY BARRIER DIO DE : Features Surface m ount device. Low VF m nm m m Connection Diagram Super high speed sw itchin g. •7 \s — ¿*ai y m« H igh reliability by planer design. w\ • 5 ) & : Applications cD H igh speed p ow er sw itchin g.

KE 10A DIODE

Contextual Info: TS802C09< ioa SCHOTTKY BARRIER DIODE Features • »»*#1*^116 Surface mount device. • 1fcVF Low VF • X-f Xl£-KA *#*i:3fc\,' Super high speed switching. •w s& s* Connection Diagram • TV-*- Jt t f t f l MRt t High reliability by planer design. ■ £ ! & : Applications

Contextual Info: http://www.fujisemi.com TS802C09R-TE24R FUJI Diode Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings at Ta=25˚C unless otherwise specified. Item Symbols Conditions Ratings Units Repetitive peak surge reverse voltage VRSM 100 V Repetitive peak reverse voltage

Contextual Info: TS802C09 10A (90V / 10A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 0.9 ±0.3 K-Pack(L) 4.5 ±0.2 1.32 3.0 ±0.3 9.3 ±0.5 1.5 Max 10 +0.5 +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching

Contextual Info: TS802C09 10A (90V / 10A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 0.9 ±0.3 K-Pack(L) 4.5 ±0.2 1.32 3.0 ±0.3 9.3 ±0.5 1.5 Max 10 +0.5 +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching

Contextual Info: TS802C09 10A (90V / 10A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 0.9 ±0.3 K-Pack(L) 4.5 ±0.2 1.32 3.0 ±0.3 9.3 ±0.5 1.5 Max 10 +0.5 +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching

Contextual Info: TS802C09 10A Outline Drawing SCHOTTKY BARRIER DIODE 0.1f •)— 1 2) |T 0 (0.04) 1.32(0.05) _L o 0.^ (0.02) ( 0 .20 ) ( ■ Features 2.7 0 . 11) Connection Diagram • Surface mount device • Low V f • Super high speed switching • High reliability by planer design

Contextual Info: TS802C09 10A (90V / 10A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 0.9 ±0.3 K-Pack(L) 4.5 ±0.2 1.32 3.0 ±0.3 9.3 ±0.5 1.5 Max 10 +0.5 +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching

TS802C09

Abstract: A467 vk5m a466
Contextual Info: TS802C09HOA *±/j S C H O T T K Y BARRIER D IO D E : Features •n m n & v fin t Surface mount device • fftVr Low V F Super high speed switching. •7\s-i— m c jfe ftflM m nn&m Connection Diagram tt High reliability by planer design. r>Hr~H 0 » • J 3 & : Applications

TS802C09

Contextual Info: TS802C09 10A (90V / 10A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 0.9 ±0.3 K-Pack(L) 4.5 ±0.2 1.32 3.0 ±0.3 9.3 ±0.5 1.5 Max 10 +0.5 +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching

TS802C09

Contextual Info: DAT E DRAWN JAN.-25-‘07 CHECKED JAN.-25-‘07 CHECKED JAN.-25-‘07 NAME APPROVED DWG.NO. T h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f Fu ji E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

5n fast recovery diodes

Abstract: 30A 45V SCHOTTKY BARRIER RECTIFIER GENERAL SEMICONDUCTOR SMD DIODES smd diode 0.5A fast 600v LOW LOSS FAST RECOVERY DUAL DIODES
Contextual Info: CONTENTS I. II. III. IV. V. SMD RECTIFIER DIODE LIST. SMD PACKAGE OUTLINE DRAWINGS.

Contextual Info: M/m 5? 4 yJj.TJL' m — K / Rectifier Diodes JfelS» ir m 2 in one-package a Devieetype KS823C04 T a=2£C Therm«! rating Characteristics • *3 lFSM*a Tj and Tstg Max. Volts Max.mA Amps. r SMP t f f t A Maximum ratiog VftRM k ) * 1 Volts Amps. SMD KP823C04

ESAD81

Abstract: ESAC6 erb12 ESAD81-004 era-84 SCHOTTKY -004
Contextual Info: SCHOTTKY & GENERAL PURPOSE DIODES Schottky “Quick Reference” Selection Guide PACKAGE 45 VOLT Part Number lo A Pkg. M OUNT SC802-04 1 20 AXIAL ERA82-004 ERA83-004 E R A 8 1-004 ERB81 -004 ERB83-004 ERC81 -004 ERC81S-004 0.6 1 1 2 2 3 5 TO -220 ERC80-004

ERG81-004

Abstract: ERB38-D ESAC6 YG802C04 ESAD33-02 ERA18 ERB81-004 era-84 YG811S0 YG802C06
Contextual Info: Schottky-barrier diodes Connection Package V rrm Volts 40 45 60 90 Lead Single SC If s m (Amps.) 0.6 25 1.0 50 1.0 50 1.0 30 1.0 30 1.0 30 2.0 80 2.0 100 2.0 60 2.0 60 3.0 120 3.0 80 3.0 80 1.0 40 1.0 30 1.0 30 K-pack 5.0 80 TO-22QAB 5.0 120 5.0 10 TO-220F17 *

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors

Contextual Info: SCHOTTKY BARRIER DIODES 20 - 90Vo Its 20 - 30V O LT S Part Number •o A PAC KAG E SURFACE MOUNT M S flfttfe ERA82-004 *1 ERA83-004 *1 ERA81-004 *2 ERB83-004 *2 ERC81-004 *4 ERC81S-004 *4 ERC80-004 ERC62-004 ERC80M-004 ERC62M-004 AXIAL TO*220 TO-220F ,TQs22 F<5 ,

TL130

Abstract: tc122 25 8 4 yg802c10 SD883-04 SD833-04 LM3661TL-1.40 TC8520 tc9145 TS802C09 ERA82-004
Contextual Info: 整流ダイオード / Rectifier Diodes • ショットキーバリアダイオード Schottky-Barrier Diodes（SBD） シングル 1 in one-package 形 式 Device type ERA82-004 SC802-04 SC802-06 SC802-09 ERA83-004 ERA83-006 ERA81-004 ERA84-009 ERA85-009

G-160B

Abstract: pg123s15 2FI300A-060 yg121s15 6RI50E-080M5 PA905C6 2fi300a esja18-08 ERD81-004 ESJA83-16A
Contextual Info: Notice of Scheduled Discontinuation of Products Because we are unable to ensure the continued production and maintenance of some manufacturing equipment for our semiconductor products, the products for which stable production and sufficient reliability are expected to become difficult will be discontinued as