Untitled
Abstract: No abstract text available
Text: http://www.fujisemi.com TS802C09R-TE24R FUJI Diode Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings at Ta=25˚C unless otherwise specified. Item Symbols Conditions Ratings Units Repetitive peak surge reverse voltage VRSM 100 V Repetitive peak reverse voltage
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TS802C09R-TE24R
500ns
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Untitled
Abstract: No abstract text available
Text: TS802C09 10A (90V / 10A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 0.9 ±0.3 K-Pack(L) 4.5 ±0.2 1.32 3.0 ±0.3 9.3 ±0.5 1.5 Max 10 +0.5 +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching
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TS802C09
500ns,
Rati60
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Untitled
Abstract: No abstract text available
Text: TS802C09 10A (90V / 10A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 0.9 ±0.3 K-Pack(L) 4.5 ±0.2 1.32 3.0 ±0.3 9.3 ±0.5 1.5 Max 10 +0.5 +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching
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TS802C09
500ns,
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Untitled
Abstract: No abstract text available
Text: TS802C09 10A (90V / 10A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 0.9 ±0.3 K-Pack(L) 4.5 ±0.2 1.32 3.0 ±0.3 9.3 ±0.5 1.5 Max 10 +0.5 +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching
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TS802C09
500ns,
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Untitled
Abstract: No abstract text available
Text: TS802C09 10A (90V / 10A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 0.9 ±0.3 K-Pack(L) 4.5 ±0.2 1.32 3.0 ±0.3 9.3 ±0.5 1.5 Max 10 +0.5 +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching
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TS802C09
500ns,
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TS802C09
Abstract: No abstract text available
Text: TS802C09 10A (90V / 10A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 0.9 ±0.3 K-Pack(L) 4.5 ±0.2 1.32 3.0 ±0.3 9.3 ±0.5 1.5 Max 10 +0.5 +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching
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TS802C09
500ns,
TS802C09
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TS802C09
Abstract: No abstract text available
Text: DAT E DRAWN JAN.-25-‘07 CHECKED JAN.-25-‘07 CHECKED JAN.-25-‘07 NAME APPROVED DWG.NO. T h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f Fu ji E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,
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TS802C09R-TE24R
MS5D3034
H04-004-03a
TS802C09
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mp2a5100
Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors
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RH011h
2007-10B120FIS
mp2a5100
ya868c12
YA868C15
2sk4004
YG865C10
F5049
diode 3a05
Diode SMD SJ 24
Diode SMD SJ 09
Diode SMD SJ 28
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TL130
Abstract: tc122 25 8 4 yg802c10 SD883-04 SD833-04 LM3661TL-1.40 TC8520 tc9145 TS802C09 ERA82-004
Text: 整流ダイオード / Rectifier Diodes • ショットキーバリアダイオード Schottky-Barrier Diodes（SBD） シングル 1 in one-package 形 式 Device type ERA82-004 SC802-04 SC802-06 SC802-09 ERA83-004 ERA83-006 ERA81-004 ERA84-009 ERA85-009
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ERA82-004
SC802-04
SC802-06
SC802-09
ERA83-004
ERA83-006
ERA81-004
ERA84-009
ERA85-009
CB803-03
TL130
tc122 25 8 4
yg802c10
SD883-04
SD833-04
LM3661TL-1.40
TC8520
tc9145
TS802C09
ERA82-004
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G-160B
Abstract: pg123s15 2FI300A-060 yg121s15 6RI50E-080M5 PA905C6 2fi300a esja18-08 ERD81-004 ESJA83-16A
Text: Notice of Scheduled Discontinuation of Products Because we are unable to ensure the continued production and maintenance of some manufacturing equipment for our semiconductor products, the products for which stable production and sufficient reliability are expected to become difficult will be discontinued as
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A837C04,
PA847C04
PA886C02
YA846C04
ERD75-*
ERE75-*
SID01-*
SIE01-*
ERG75-*
SIG01-*
G-160B
pg123s15
2FI300A-060
yg121s15
6RI50E-080M5
PA905C6
2fi300a
esja18-08
ERD81-004
ESJA83-16A
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a467
Abstract: TS802C09 ts802c PUAR
Text: TS802C09< ioa SCHOTTKY BARRIER DIODE Features • »»*#1*^116 Surface mount device. • 1fcVF Low VF • X-f Xl£-KA *#*i:3fc\,' Super high speed switching. •w s& s* Connection Diagram • TV-*- Jt t f t f l MRt t High reliability by planer design. ■ £ ! & : Applications
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TS802C09
500ns,
TS802C09(
a467
ts802c
PUAR
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TS802C09
Abstract: ze 003 ic
Text: TS802C09 10A SCHOTTKY BARRIER DIODE I Outline Drawing • Features Connection Diagram • Surface mount device • Lo w V f • Super high speed switching • High reliability by planer design H Applications • High speed power switching ■ Maximum Ratings & Characteristics
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TS802C09
500ns,
00D3b72
TS802C09
ze 003 ic
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TS802C09
Abstract: Collmer SC
Text: TS802C09< ioa SCHOTTKY BARRIER DIODE Features • »»*#1*^116 Surface mount device. • 1fcVF Low VF • X-f Xl£-KA *#*i:3fc\,' •w s& s* Connection Diagram Super high speed switching. • TV-*- Jt t f t f l MRt t High reliability by planer design. ■ £ ! & : Applications
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TS802C09
500ns,
TS802C09(
Collmer SC
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Untitled
Abstract: No abstract text available
Text: Schottky-Barrier Diodes Dual package Ratings and characteristics Maximum rating Vrrm lo *1 TS802C06 TS802C09 TP802C04 TP802C06 TP802C09 ESAC82-004 ESAC82M-004 O II CO ^1 5.0 Mass Grams Fig. No. Irrm * 3 Max. mA Dimensions -40 t o +125 0.55 If=2.5A 5.0 0.6
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TS802C06
TS802C09
TP802C04
TP802C06
TP802C09
ESAC82-004
ESAC82M-004
O-22QF15
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KE 10A DIODE
Abstract: No abstract text available
Text: TS802C09< ioa SCHOTTKY BARRIER DIODE Features • »»*#1*^116 Surface mount device. • 1fcVF Low VF • X-f Xl£-KA *#*i:3fc\,' Super high speed switching. •w s& s* Connection Diagram • TV-*- Jt t f t f l MRt t High reliability by planer design. ■ £ ! & : Applications
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TS802C09<
500ns,
I95t/R89)
KE 10A DIODE
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Untitled
Abstract: No abstract text available
Text: TS802C09 10A Outline Drawing SCHOTTKY BARRIER DIODE 0.1f •)— 1 2) |T 0 (0.04) 1.32(0.05) _L o 0.^ (0.02) ( 0 .20 ) ( ■ Features 2.7 0 . 11) Connection Diagram • Surface mount device • Low V f • Super high speed switching • High reliability by planer design
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TS802C09
500ns,
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TS802C09
Abstract: A467 vk5m a466
Text: TS802C09HOA *±/j S C H O T T K Y BARRIER D IO D E : Features •n m n & v fin t Surface mount device • fftVr Low V F Super high speed switching. •7\s-i— m c jfe ftflM m nn&m Connection Diagram tt High reliability by planer design. r>Hr~H 0 » • J 3 & : Applications
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TS802C09
500ns,
DDDb44fl
TS802C0900A)
QQGb44cl
A467
vk5m
a466
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SE024
Abstract: ERB12 ESAD81-004 se014 ERA1506 ERB30 ESAB82M-006 esac6 ERD03-04 SE036
Text: COLLMER SEMICONDUCTOR INC MÖE D me, dddisôi Schottky/General Purpose Diodes " P ICOL <S o \ ~ \ J > Schottky “Quick Reference” Selection Guide PACKAGE SURFACE MOUNT S I N G L E AXIAL TO-220 TO-3P F-PACK Full Mold Package PACKAGE SURFACE MOUNT D U A
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SE014
SE036
SE059
SC802-04
SC802-06
SC802-09
ERA82-004
ERA83-006
ERA85-009
ERA83-004
SE024
ERB12
ESAD81-004
ERA1506
ERB30
ESAB82M-006
esac6
ERD03-04
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6DI15S-050
Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140
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1D500A-030
1DI200E-055
1DI200K-055
1DI200M-120
1DI200MA-050
1DI200Z-100
1DI200Z-120
1DI200ZN-120
1DI200ZP-120
1DI300M-050
6DI15S-050
1MB1400N-120
6D130Z-120
ENC471
2sk2850
2sk2761
ESJA58-06A
1MBH-60D
1mbh60d-090a
6DI15S050
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5n fast recovery diodes
Abstract: 30A 45V SCHOTTKY BARRIER RECTIFIER GENERAL SEMICONDUCTOR SMD DIODES smd diode 0.5A fast 600v LOW LOSS FAST RECOVERY DUAL DIODES
Text: CONTENTS I. II. III. IV. V. SMD RECTIFIER DIODE LIST. SMD PACKAGE OUTLINE DRAWINGS.
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SC802-04
TS902C2
TS902C3
TS912S6
TS906C2
5n fast recovery diodes
30A 45V SCHOTTKY BARRIER RECTIFIER
GENERAL SEMICONDUCTOR SMD DIODES
smd diode 0.5A fast 600v
LOW LOSS FAST RECOVERY DUAL DIODES
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Untitled
Abstract: No abstract text available
Text: M/m 5? 4 yJj.TJL' m — K / Rectifier Diodes JfelS» ir m 2 in one-package a Devieetype KS823C04 T a=2£C Therm«! rating Characteristics • *3 lFSM*a Tj and Tstg Max. Volts Max.mA Amps. r SMP t f f t A Maximum ratiog VftRM k ) * 1 Volts Amps. SMD KP823C04
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1c-79
c-85C
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ESAD81
Abstract: ESAC6 erb12 ESAD81-004 era-84 SCHOTTKY -004
Text: SCHOTTKY & GENERAL PURPOSE DIODES Schottky “Quick Reference” Selection Guide PACKAGE 45 VOLT Part Number lo A Pkg. M OUNT SC802-04 1 20 AXIAL ERA82-004 ERA83-004 E R A 8 1-004 ERB81 -004 ERB83-004 ERC81 -004 ERC81S-004 0.6 1 1 2 2 3 5 TO -220 ERC80-004
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SC802-06
ERA83-006
ERB83-006
ERC81
SC802-09
ERA85-009
ERA84-009
ERB84-009
ERC84-009
O-220F
ESAD81
ESAC6
erb12
ESAD81-004
era-84
SCHOTTKY -004
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ERG81-004
Abstract: ERB38-D ESAC6 YG802C04 ESAD33-02 ERA18 ERB81-004 era-84 YG811S0 YG802C06
Text: Schottky-barrier diodes Connection Package V rrm Volts 40 45 60 90 Lead Single SC If s m (Amps.) 0.6 25 1.0 50 1.0 50 1.0 30 1.0 30 1.0 30 2.0 80 2.0 100 2.0 60 2.0 60 3.0 120 3.0 80 3.0 80 1.0 40 1.0 30 1.0 30 K-pack 5.0 80 TO-22QAB 5.0 120 5.0 10 TO-220F17 *
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ERA82-004
ERA83-004
ERA81-004
ERA83-006
ERA84-009
ERA85-009
ERB83-004
ERB81-004
ERB83-006
ERB84-009
ERG81-004
ERB38-D
ESAC6
YG802C04
ESAD33-02
ERA18
era-84
YG811S0
YG802C06
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODES 20 - 90Vo Its 20 - 30V O LT S Part Number •o A PAC KAG E SURFACE MOUNT M S flfttfe ERA82-004 *1 ERA83-004 *1 ERA81-004 *2 ERB83-004 *2 ERC81-004 *4 ERC81S-004 *4 ERC80-004 ERC62-004 ERC80M-004 ERC62M-004 AXIAL TO*220 TO-220F ,TQs22 F<5 ,
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ERA82-004
ERA83-004
ERA81-004
ERB83-004
ERC81-004
ERC81S-004
ERC80-004
ERC62-004
ERC80M-004
ERC62M-004
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