Untitled
Abstract: No abstract text available
Text: TS802C04 10A (40V / 10A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching
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TS802C04
500ns,
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5Ct transistor
Abstract: 020C TS8023
Text: ISOLATION TRANSFORMER FOR 10 BASE-T P/N: TS8023 LF DATA SHEET Pag1/1 Feature l l l l l l l Designed to Meet or exceed IEEE 802.3, 10 BASE-T Specifications. Surface mount, IC grade, transfer-molded package withstands 235℃ peak temperature profile. Available with common mode chokes for EMI suppression.
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TS8023
5Ct transistor
020C
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5Ct transistor
Abstract: 020C
Text: ISOLATION TRANSFORMER FOR 10 BASE-T P/N: TS8023-1 LF DATA SHEET Pag1/1 Feature l l l l l l l Designed to Meet or exceed IEEE 802.3, 10 BASE-T Specifications. Surface mount, IC grade, transfer-molded package withstands 235℃ peak temperature profile. Available with common mode chokes for EMI suppression.
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TS8023-1
5Ct transistor
020C
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TS8022B
Abstract: 020C
Text: Bothhandusa.com TS8022B LF 10 BASE-T SMD ETHERNET TRANSFORMER P/N:TS8022B LF DATA SHEET Page : 1/1 Feature l l l l l l l 16 PINS, SMD package to compliant with IEEE802. 3 standard. Model is available to interface with 10 BASE-T transceivers. Compatible with IR oven processes.
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TS8022B
IEEE802.
100KHz/50mV
100KHz/50m
020C
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TS802C04
Abstract: No abstract text available
Text: TS802C04 10A (40V / 10A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching
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TS802C04
500ns,
TS802C04
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Untitled
Abstract: No abstract text available
Text: TS802C06 10A (60V / 10A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 0.9 ±0.3 K-Pack(L) 4.5 ±0.2 1.32 3.0 ±0.3 9.3 ±0.5 1.5 Max 10 +0.5 +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching
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TS802C06
500ns,
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TS8025
Abstract: 020C
Text: Bothhandusa.com TS8025 LF 10BASE-T SMD ETHERNET TRANSFORMER P/N: TS8025 LF DATA SHEET page:1/1 Feature l l l l l l 16 PIN SOIC isolation modules. Meet the requirements of IEEE802.3. Comply with RoHS requirements-whole part No Cd, No Hg, No Cr6+, No PBB and PBDE and No Pb on external pins.
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TS8025
10BASE-T
IEEE802
020C
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5Ct transistor
Abstract: electronic transformer TS8024
Text: ISOLATION TRANSFORMER FOR 10 BASE-T P/N: TS8024 LF DATA SHEET Pag1/1 Feature l l l l l l Designed to Meet or exceed IEEE 802.3, 10 BASE-T Specifications. Surface mount, IC grade, transfer-molded package withstands 235℃ peak temperature profile. Available with common mode chokes for EMI suppression.
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TS8024
100KHz/20mVrms
5Ct transistor
electronic transformer
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TS8022B
Abstract: No abstract text available
Text: Bothhandusa.com TS8022B LF 10 BASE-T SMD ETHERNET TRANSFORMER P/N:TS8022B LF DATA SHEET Page : 1/1 Feature l l l l l l 16 PINS, SMD package to compliant with IEEE802. 3 standard. Model is available to interface with 10 BASE-T transceivers. Compatible with IR oven processes.
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TS8022B
IEEE802.
100KHz/50m
100KHz/50mV
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TS8022B
Abstract: No abstract text available
Text: Bothhandusa.com TS8022BM LF 10 BASE-T SMD ETHERNET TRANSFORMER P/N:TS8022BM LF DATA SHEET Page : 1/1 Feature l l l l l l 16 PINS, SMD package to compliant with IEEE802. 3 standard. Model is available to interface with 10 BASE-T transceivers. Compatible with IR oven processes.
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TS8022BM
IEEE802.
100KHz/50mV
100KHz/50m
TS8022B
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Untitled
Abstract: No abstract text available
Text: TS802C06 10A (60V / 10A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 0.9 ±0.3 K-Pack(L) 4.5 ±0.2 1.32 3.0 ±0.3 9.3 ±0.5 1.5 Max 10 +0.5 +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching
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TS802C06
500ns,
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Untitled
Abstract: No abstract text available
Text: TS802C04 10A (40V / 10A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching
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TS802C04
500ns,
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5Ct transistor
Abstract: transformer turn ratio 15 diode a3 electronic transformer TS8023
Text: ISOLATION TRANSFORMER FOR 10 BASE-T P/N: TS8023 LF DATA SHEET Pag1/1 Feature l l l l l l Designed to Meet or exceed IEEE 802.3, 10 BASE-T Specifications. Surface mount, IC grade, transfer-molded package withstands 235℃ peak temperature profile. Available with common mode chokes for EMI suppression.
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TS8023
5Ct transistor
transformer turn ratio 15
diode a3
electronic transformer
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020C
Abstract: No abstract text available
Text: Bothhandusa.com TS8023-1 LF 10 BASE-T SMD ETHERNET TRANSFORMER P/N:TS8023-1 LF DATA SHEET Page : 1/ 1 Feature l l l Designed for use in can car area network. Dual channel low cost. Comply with RoHS requirements-whole part No Cd, No Hg, No Cr6+, No PBB and PBDE and No Pb on external pins.
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TS8023-1
100KHz/50mVrms
020C
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TS802C06
Abstract: No abstract text available
Text: TS802C06 1OA <§ SCHOTTKY BARRIER DIODE I • O u tlin e D ra w in g Features • • • • Connection Diagram Surface mount device Lo w V f Super high speed switching High reliability by planer design H Applications • High speed power switching ■
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TS802C06
500ns,
0D03bbci
TS802C06
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a467
Abstract: TS802C09 ts802c PUAR
Text: TS802C09< ioa SCHOTTKY BARRIER DIODE Features • »»*#1*^116 Surface mount device. • 1fcVF Low VF • X-f Xl£-KA *#*i:3fc\,' Super high speed switching. •w s& s* Connection Diagram • TV-*- Jt t f t f l MRt t High reliability by planer design. ■ £ ! & : Applications
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TS802C09
500ns,
TS802C09(
a467
ts802c
PUAR
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TS802C09
Abstract: ze 003 ic
Text: TS802C09 10A SCHOTTKY BARRIER DIODE I Outline Drawing • Features Connection Diagram • Surface mount device • Lo w V f • Super high speed switching • High reliability by planer design H Applications • High speed power switching ■ Maximum Ratings & Characteristics
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TS802C09
500ns,
00D3b72
TS802C09
ze 003 ic
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diode ars1
Abstract: IR151
Text: TS802C04 ioa SCHOTTKY BARRIER DIODE • 4 $ £ : Features Surface m ount device. • 1& V f Low V f • wt 7A"J*>9X t r - * (=& i ' Connection Diagram Super high speed sw itchin g. • TV— *H± High reliability by planer design, : Applications High speed pow er s w itc h in g .
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TS802C04(
500ns,
I95t/R89
diode ars1
IR151
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D1108
Abstract: TS802C04
Text: TS802C04 ioa g ± 'J K : Outline Drawings SCHOTTKY BARRIER DIODE »V «•5*“ 132 Si - 12. T „ [o jîf 0ÀJ 2.7 -S-W : Features • n m JEDEC Surface m o u n t device. e ìa j • ffiVp m m & m Low Vp Connection Diagram Super high speed s w itc h in g .
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TS802C04
500ns,
D1108
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TS802C06
Abstract: No abstract text available
Text: TS802C06 ioa : Outline Drawings '> 3 SCHOTTKY BARRIER DIODE : Features Surface mount device JEDEC EIAJ ’ Low VF Super high speed switching. • f v —r - m m c • U S t ifc j s s s iu s t t Connection Diagram High reliability by planer design . rT^ : Applications
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TS802C06
500ns,
Q00L444
TS802C06
0QQb445
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TS802C09
Abstract: Collmer SC
Text: TS802C09< ioa SCHOTTKY BARRIER DIODE Features • »»*#1*^116 Surface mount device. • 1fcVF Low VF • X-f Xl£-KA *#*i:3fc\,' •w s& s* Connection Diagram Super high speed switching. • TV-*- Jt t f t f l MRt t High reliability by planer design. ■ £ ! & : Applications
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TS802C09
500ns,
TS802C09(
Collmer SC
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Untitled
Abstract: No abstract text available
Text: Schottky-Barrier Diodes Dual package Ratings and characteristics Maximum rating Vrrm lo *1 TS802C06 TS802C09 TP802C04 TP802C06 TP802C09 ESAC82-004 ESAC82M-004 O II CO ^1 5.0 Mass Grams Fig. No. Irrm * 3 Max. mA Dimensions -40 t o +125 0.55 If=2.5A 5.0 0.6
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TS802C06
TS802C09
TP802C04
TP802C06
TP802C09
ESAC82-004
ESAC82M-004
O-22QF15
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a465
Abstract: No abstract text available
Text: TS802C09 ioa >3 SCHOTTKY BARRIER DIO DE : Features Surface m ount device. Low VF m nm m m Connection Diagram Super high speed sw itchin g. •7 \s — ¿*ai y m« H igh reliability by planer design. w\ • 5 ) & : Applications cD H igh speed p ow er sw itchin g.
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TS802C09(
500ns,
a465
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KE 10A DIODE
Abstract: No abstract text available
Text: TS802C09< ioa SCHOTTKY BARRIER DIODE Features • »»*#1*^116 Surface mount device. • 1fcVF Low VF • X-f Xl£-KA *#*i:3fc\,' Super high speed switching. •w s& s* Connection Diagram • TV-*- Jt t f t f l MRt t High reliability by planer design. ■ £ ! & : Applications
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TS802C09<
500ns,
I95t/R89)
KE 10A DIODE
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