TS3 PHILIPS Search Results

interruptor

Abstract: BSP92 PH* SOT223 transistor
Contextual Info: bb53TE4 □□70010 TS3 Philips Sem iconductors P-channel enhancement mode vertical D-MOS transistor IS IC 3 Product specification BSP92 _NAPC/PHILIPS semiconp b3E D FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 O R DATA SHEET FEATURES Q UICK REFERENCE DATA

Contextual Info: N ANER PHILIPS/DISCRETE b'lE D • bbSa^Bl ODHTblS TS3 ■ APX BLX65E BLX65ES A V.H.F./U.H.F. POWER TRANSISTORS N-P-N silicon planar epitaxial transistors in TO-39 envelope designed for use in portable and mobile radio transmitters in the v.h.f. and u.h.f. bands.

BLX65E

Abstract: BLX65ES
Contextual Info: N AMER PHILIPS/DISCRETE b'îE » bbS3^31 DGH^blS TS3 • APX BLX65E BLX65ES J V.H.F./U.H.F. POWER TRANSISTORS N-P-N silicon planar epitaxial transistors in TO-39 envelope designed fo r use in portable and mobile radio transmitters in the v.h.f. and u.h.f. bands.

ECG703

Abstract: 8T20 philips toroidal transformer toroidal transformer for philips ECG703A
Contextual Info: fc,ts3^23 0003245 7 • — ECG703A RF/IF AMPLIFIER OSCILLATOR AND MIXER - T VT ?-0 3 'D 7 — PHILIPS E C G INC ' 17E D DESCRIPTION The ECG703A integrated circuit is an RF/ IF amplifier intended for use as a limiting or nonlimiting am plifier, harmonic mixer, or

ladder servo motor diagram

Abstract: l09585
Contextual Info: Philips Semiconductors Preliminary specification All Compact Disc Engine ACE SAA7348GP CONTENTS 8.1.13 8.1.14 8.1.15 8.2 8.3 1 FEATURES 2 GENERAL DESCRIPTION 3 ORDERING INFORMATION 4 QUICK REFERENCE DATA 5 BLOCK DIAGRAM 8.4 8.4.1 Memory map access to the servo

TRANSISTOR 3F t

Abstract: T-33-J RZ1214B150Y 3F TRANSISTOR
Contextual Info: N AMER PHILIPS/DISCRETE MAINTENANCE TYPE □ LE D • t.fa53131 001522"] Ö ■ RZ1214B150Y T-S3- ¡S' PULSED MICROW AVE POWER TRAN SISTO R N-P-N silicon microwave power transistor for use in a common-base, class-C wideband amplifier and operating under pulsed conditions in L-band radar applications.

T17 TRANSISTOR

Abstract: RN2731B110W
Contextual Info: Philips Semiconductors Objective specification NPN Silicon planar epitaxial RN2731B110W microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 100 is pulse width, 10% duty factor • Diffused emitter ballasting resistors

BDS940

Abstract: BOS938 lem HA BDS934 BDS936 BDS938 BDS942 USB002 smd transistors 458
Contextual Info: Philips Component« BDS934/936/938/940/942 Datasheet status Product specification date of Issue April 1991 PNP silicon epitaxial base power transistors PINNING -SOT223 DESCRIPTION DESCRIPTION base collector emitter collector PIN 1 2 3 4 PNP silicon epitaxial base transistors

Contextual Info: N AMER PHILIPS/DISCRETE b^E bbSBRBl 0032562 244 * A P X ]> Philips Semiconductors Preliminary specification W ideband amplifier module OM2083/60 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use

cd 3313

Abstract: BUW132 BUW132A BUW132H IEC134 L100 npn transistors 400V
Contextual Info: •I DEVELOPMENT DATA fcib53T31 Q Q n D S T ■ I BUW132 SERIES' T his d a ta s h e e t c o n ta in s a d v an ce in fo rm a tio n a n d s p e cific a tio n s a re s u b je c t to ch ange w ith o u t n o tic e . N AMER PHILIPS/ DIS CRETE SSE D ^ T-S3-/3 NPN SILICON POWER TRANSISTORS

vHF amplifier module

Abstract: PHILIPS 108 CAPACITOR philips hybrid amplifier modules RM8 T9 philips MATV amplifiers philips ferrite material specifications philips wideband amplifier module
Contextual Info: N AMER P H I L I P S / D I S C R E T E b^E » • bbSB^l DDBESflE 24 4 * A P X Philips Semiconductors Preliminary specification Wideband amplifier module OM2083/60 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use

CNY17G-3

Abstract: CNY17G3
Contextual Info: Philips Semiconductors Product specification High-voltage optocouplers CNY17G/CNY17GF QUALITY TECHNOLOGIES CORP TMbböSl OOOMbEE M m S7E D IflTY FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with

10103F

Contextual Info: Philips Components-Signetics 10103 Docum ent No. 8 5 3 -0 6 3 9 EC N No. 99799 D ate of Issue June 14, 1990 Status Product Specification Gate Quad 2-Input OR 3 OR and 1 OR/NOR Gate E C L Products FEATURES ORDERING INFORMATION • Typical propagation delay: 2.0ns

74LV573

Abstract: 74LV573D 74LV573DB 74LV573N
Contextual Info: NAPC/PHILIPS SEMICOND b3E ]> • hhSBTEM 0003016 3T5 « S I C 3 turnups oemiconauciors n vuuvi ^pcum^aiion Octal D-type transparent latch; 3-state FEATURES • • • • • • • • • Optimized for Low Voltage applications: 1.0 to 3.6 V Accepts TTL input levels

subwoofer filter circuit passive

Abstract: NJW1169 NJW1169FH1 QFP64 QFP64-H1
Contextual Info: NJW1169 AUDIO PROCESSOR with BBE Sound Enhancement & Passive Matrix TruSurround Virtualizer & TruBass • GENERAL DESCRIPTION The NJW1169 is an audio processor with Passive Matrix TruSurround Virtualizer, TruBass and BBE sound enhancement. It includes all of functions processing audio signal for TV, such as

PCF84C00

Contextual Info: Philips Semiconductors Short-form product specification 8-bit microcontroller with l2C-bus interface_ PCF84C00 m•I FEATURES • Manufactured in silicon gate CMOS process • 8-bit CPU, RAM, I/O in a single 28-lead or 56-lead package • ‘Piggy-back’ and ROM-less versions, external program

NJW1139A

Abstract: NJW1139AGK1 sound processor bd 39
Contextual Info: NJW1139A AUDIO PROCESSOR with Sound Enhancement and TruSurround • GENERAL DESCRIPTION The NJW1139A is a sound processor with BBE sound enhancement and TruSurround virtualizer. It includes all of functions processing audio signal for TV, such as tone control, balance, volume, mute, simulated

NJW1139A

Abstract: NJW1139AGK1 effect bass NJW1139
Contextual Info: NJW1139A P R E L I M I N ARY AUDIO PROCESSOR with Sound Enhancement and TruSurround • GENERAL DESCRIPTION The NJW1139A is a sound processor with BBE sound enhancement and TruSurround virtualizer. It includes all of functions processing audio signal for TV,

Philips 3.5 digit 7 segment lcd display

Abstract: PCF1171C Driver 4 digit segment lcd display pin configuration 4 DIGIT LCD DISPLAY 40 PIN pcf 85 lcd driver 1171c 16 segment driver 4-DIGIT counter with 7-SEGMENT DISPLAY 4-digit counter PCF1171CT
Contextual Info: [^L•5 3 CÍE ^ Philips Semiconductors ODf l - STf cj T 522 IH S IC 3 Product specification PCF1171C 4-digit LCD car clock NAPC/PHILIPS S E m C O N D tiME » FEATURES GENERAL DESCRIPTION • Driving standard 31/2 or a 4-digit LCD The PCF 1171C is a single chip, 4.19 MHz CMOS clock

BGY110D

Abstract: BGY110E 110E 110G BGY110F BGY110G MBH304 Amplifier Modules
Contextual Info: Product specification Philips Semiconductors BGY110D; BGY110E; BGY110F; BGY110G UHF amplifier modules PINNING - SOT246 FEATURES • 7.2 V nominal supply voltage DESCRIPTION PIN • 1.7 W output power 1 RF input/Vc • Easy control of output power by DC voltage.

Contextual Info: [AK09912] AK09912 3-axis Electronic Compass 1. Features   A 3-axis electronic compass IC with high sensitive Hall sensor technology. Best adapted to pedestrian city navigation use for cell phone and other portable appliance.  Functions:  3-axis magnetometer device suitable for compass application

Visil

Abstract: 100-P BUK101-50 BUK101-50DL T0220AB BUK101-500L
Contextual Info: b5E D PHILIPS INTERNATIONAL m 7110aEb DQfc.37^1 405 « P H I N Philips Semiconductors Product Specification PowerMOS transistor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected loaic level power MOSFET in a 3 pin plastic

Contextual Info: P h ilip s C o m p o n e n ts BDS934/936/938/940/942 D atash eet status Product specification data o f Issue April 1991 PNP silicon epitaxial base power transistors PINNING -SO T223 DESCRIPTION PNP silicon epitaxial base transistors in a m iniature SMD envelope

83C654

Abstract: QFP44 SAA4945H VA-22
Contextual Info: INTEGRATED CIRCUITS DATA SHEET SAA4945H LIne MEmory noise Reduction IC LIMERIC Preliminary specification File under Integrated Circuits, IC02 1997 Jun 10 Philips Semiconductors Preliminary specification LIne MEmory noise Reduction IC (LIMERIC) SAA4945H FEATURES