TR201
Abstract: TR306 injector for rocket engine TR306 liquid apogee engines injector Thruster injector pintle rocket pintle injector rocket liquid propulsion engine of ballistic missile
Text: AIAA 2000-3871 Page 1 of 22 TRW Pintle Engine Heritage and Performance Characteristics Gordon A. Dressler* and J. Martin Bauer* TRW Inc., Redondo Beach, CA 90278 Abstract The pintle injector rocket engine is fundamentally different from other rocket engines, which nearly universally employ a
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1N3062
Abstract: No abstract text available
Text: TDC1044 Monolithic Video A /D Converter 4-Bit, 25M sps The TRW TDC1044 is a 25Msps MegaSample Per Second fully parallel analog-to-digital converter, capable of converting an analog signal with full-power frequency Features • 4-Bit Resolution • 1/4 LSB Non-Linearity
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TDC1044
TDC1044
25Msps
TDC1044.
1N3062
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TRW Connectors
Abstract: marking B26 diode SCHOTTKY trw resistor 810 souriau Schottky Diode B29 A2-15 SOURIAU Robinson Nugent pga 1020J1C 1N5818 74LS174
Text: TDC1020 High-Speed Monolithic A/D Converter Features 10-Bit, 20Msps • 20Msps Conversion Rate • 10-Bit Resolution • Overflow Flag The TRW TDC1020 is a 20Msps IMegaSample Per Second full-parallel flash) analog-to-digital converter, capable of converting a video signal into a stream of
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TDC1020
10-Bit
20Msps
10-Bit,
20Msps
TDC1020
TRW Connectors
marking B26 diode SCHOTTKY
trw resistor
810 souriau
Schottky Diode B29
A2-15 SOURIAU
Robinson Nugent pga
1020J1C
1N5818
74LS174
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CA5800
Abstract: TRW 3894 CAS800 CA5800H TRW CA amplifier trw CATV S43E trw 630 trw rf
Text: T R W ELE< CNPNT/ R F fi1! D E ^ñ fi2 S a 2 M w 0 0 0 3e!3 e! t> Ê s^ 3 m s^ m m m RF Devices Division TRW Electronic Components Group £ ¿ t W W CA5800 VHF-UHF Linear Amplifier 10-1000 MHz, 1W Output Power • Wide Bandwidth: • 43dBm Third Order Intercept
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CA5800
43dBm
10MHz-1000MHz
CAS800
CA5800
-32dB
TRW 3894
CA5800H
TRW CA amplifier
trw CATV
S43E
trw 630
trw rf
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led 7 segment anode TIL 702
Abstract: trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150
Text: CONTENTS Alphanumeric Index 5 Symbol Designation 7 Type Designation Systems — for LEDs — for Displays — for IR-Emitters — for Laser-Diodes — for Optical Switches 8 8 8 8 8 Classification Code for all LEDs and Displays — for LEDs — Displays 9
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10x10
led 7 segment anode TIL 702
trw 007 diodes
TDDG 5250 m
817 optron
telefunken transistor
opto smd code marking NEC
TDDG 5250
hoa 865
DIODE PK IN 5401
7segment sm 4150
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THC1201S3B
Abstract: B1317 THC1201
Text: TRY* THC1201 Complete High-Speed A/D Converter 12-Bit, 10M sps The THC1201 is a complete 12-bit 10Msps MegaSamples Per Second analog-to-digital converter that includes all the circuitry required to digitize signals within a DC to 70MHz band. With its two-step architecture, the
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THC1201
10Msps
THC1201E1C)
12-Bit,
THC1201
12-bit
10Msps
THC1201S3B
B1317
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pmi op400
Abstract: PMI OP 400 B24DA 86D9-264-6114-7550E1 1N3062 THC1202 THC1202E1C THC1202S6V 40-pin right-angle male connector ttl oscillator
Text: TH C 1202 Complete High-Speed A/D Converter Features Conversion Rate DC To 10M sps 12-Bit, 10Msps Large-Signal B a n d w id th > 7 0 M H z N o M issing Codes, G uaranteed The TH C 1202 is a com plete 1 2 -b it 10M sps a n a lo g -to digital converter th a t includes all th e c irc u itry required to
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THC1202
12-Bit,
10Msps
THC1202
12-bit
10Msps
70MHz
THC1202E1C
pmi op400
PMI OP 400
B24DA
86D9-264-6114-7550E1
1N3062
THC1202E1C
THC1202S6V
40-pin right-angle male connector
ttl oscillator
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rca 2n2147
Abstract: 2N2207 2n2183 rca 2N2196 2N2214 2N2161 2N2222A motorola 2N2204 2n2162 2N2200
Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 714 BFX69A BFX69A 2N1594 BCW94A 2SC366G 2N1644A 2N2192 2N2192A 2N2192B MPS650 CX904 CX904 2SC943 2SC943 2SC943 KT503B BCW90B BCW90B 2N731 Manufacturer
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BFX69A
2N1594
BCW94A
2SC366G
2N1644A
2N2192
2N2192A
2N2192B
MPS650
rca 2n2147
2N2207
2n2183 rca
2N2196
2N2214
2N2161
2N2222A motorola
2N2204
2n2162
2N2200
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2220G8C
Abstract: No abstract text available
Text: TRww TMC2220/TMC2221 CMOS Programmable Digital Output Correlators 4 x 3 2 Bit, 20MHz 1 x 128 Bit, 20MHz The TM C 2220 20M H z, TTL com patible CMOS is composed of four separate 1 x 32 correlator The correlation scores of the four modules are com bined and output on tw o separate parallel,
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TMC2220/TMC2221
20MHz
2220G8C
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amd processor based Circuit Diagram
Abstract: address generator logic vhdl code vhdl code for memory controller AM29PL160 MCF5307
Text: Interfacing the Am29PL160 to the Motorola ColdfireTM Processor Application Note -XO\ 7KH IROORZLQJ GRFXPHQW UHIHUV WR 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ
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Am29PL160
amd processor based Circuit Diagram
address generator logic vhdl code
vhdl code for memory controller
MCF5307
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trw RF POWER TRANSISTOR
Abstract: trw rf transistor RF2123 TA0012 HBT transistor gsm cellular power amplifier trw rf transistors
Text: TA0012 TA0012 RF2123: New High Power, High Efficiency HBT GSM Power Amplifier efficiency is extremely important. Sixty percent total efficiency for a two-stage, 30dB gain GSM power amplifier IC is ideal for maximizing talk time – a key
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TA0012
RF2123:
RF2123
16-lead
trw RF POWER TRANSISTOR
trw rf transistor
TA0012
HBT transistor
gsm cellular power amplifier
trw rf transistors
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trw rf transistor
Abstract: HBT transistor RF2123 cellular phone amplifier power control transistor TA0012 Class AB AMPLIFIER 4W trw RF POWER TRANSISTOR
Text: TA0012 TA0012 RF2123: New High Power, High Efficiency HBT GSM Power Amplifier efficiency is extremely important. Sixty percent total efficiency for a two-stage, 30dB gain GSM power amplifier IC is ideal for maximizing talk time – a key
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TA0012
RF2123:
RF2123
16-lead
trw rf transistor
HBT transistor
cellular phone amplifier power control transistor
TA0012
Class AB AMPLIFIER 4W
trw RF POWER TRANSISTOR
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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TDC1002
Abstract: TDC1005B9A TDC1001 TDC1006 TDC1005 PIN-13DSB 1005B9A TDC1011 TMC2011 TMC3220
Text: 7 # ? rV Memory/Storage C lo c k P ro d u c t D esc rip tion S ize R a te 1 M H z P o w e r1 (W a tts ) Package G ra d e s2 N o te s Page TD C 10 0 5 Shift Register 64 x 2 Bit 25 24 0.6 0.6 B9 B9 16 Pin DIP 16 Pin DIP C A Expandable/Cascadable, K3 TD C 10 0 6
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TDC1005
TDC1006
TDC1011
3-18x8
21-36x4
TMC2011
TNIC2111
1-16x8
TDC1002
TDC1005B9A
TDC1001
PIN-13DSB
1005B9A
TMC3220
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L298D
Abstract: SAS251S4 ugn3013 SAS251 UCN4815A ULN3782M UDN2981LW uc3646 mc1417p CA1725E
Text: AMS-105 GENERAL INFORMATION SEMICONDUCTOR CROSS REFERENCE in Alpha-Numerical Order The suggested Allegro replacement devices are based on similarity as shown in currently published data. Exact replacement in all applications is not guaranteed and the user should compare the specifications of the competitive and recommended Allegro replacement. Special caution must be exercised in attempting to do a reverse cross. In some instances, the competitive device is obsolete; in
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AMS-105
LX8020"
CS2930"
CS298"
L298D
SAS251S4
ugn3013
SAS251
UCN4815A
ULN3782M
UDN2981LW
uc3646
mc1417p
CA1725E
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Untitled
Abstract: No abstract text available
Text: n a ry S pee. MITSUBISHI LSIs Specifications subject to change without notice. MH8V7245AWZJ -5, -6 HYPER PAGE MODE 603979776 - BIT 8388608 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH8V7245AWZJ is 8388608-word x 72-bit dynamic ram module. This consist of nine industry standard 8M x 8
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MH8V7245AWZJ
8388608-word
72-bit
MIT-DS-0091
22/Oct
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Untitled
Abstract: No abstract text available
Text: n a ry S pee. MITSUBISHI LSIs Specifications subject to change without notice. MH8V725AWZJ -5, -6 HYPER PAGE MODE 603979776 - BIT 8388608 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH8V725AWZJ is 8388608-word x 72-bit dynamic ram module. This consist of nine industry standard 8M x 8
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MH8V725AWZJ
8388608-word
72-bit
MIT-DS-0092-0
26/Feb
l/qsd/92
0-Z600-Sa-Â
80988S8
9ZZ6Z6S09
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18v10
Abstract: GAL 18v10 programming Guide
Text: Lattice Semiconductor Corporation G A L 2 2 V 1 0 F a m ily G AL18V10 G AL22V10 G AL26C V12 ” FEATURES • HIGH PERFORMANCE E ^M O S* TECHNOLOGY — 15 ns Maximum Propagation Delay — Fmax = 50 MHz — TTL Compatible 8 -1 6 mA Outputs — UltraMOS* 111Advanced CMOS Technology
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AL18V10
AL22V10
AL26C
11Advanced
22V10
18v10
GAL 18v10 programming Guide
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810B
Abstract: No abstract text available
Text: MEMORY • IS MB98A809B x -/810B x -/811B x -/812B x -25 FLASH ERASABLE AND PROGRAMMABLE MEMORY CARD 512 K/1 M/2 M/4 M-BYTE ■ DESCRIPTION The Fujitsu MB98A809Bx, MB98A810Bx, MB98A811Bx and MB98A%l2Bx are Flash electrically erasable and programmable Flash memory cards capable of storing and. retrievin^siarge amounts of data. The memory
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MB98A809B
-/810B
-/811B
-/812B
MB98A809Bx,
MB98A810Bx,
MB98A811Bx
MB98A
16-bit
F9704
810B
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lattice 22v10 programming specification
Abstract: 6355ED GAL22V10 18v10 2cv11 gal22v10-15 9H327 22V10 2cv1
Text: LATTICE SEMICONDUCTOR 2 SE D Lattice Semiconductor Corporation • 53flfacm GAL22V10 Family GAL18V10 GAL22V10 GAL26CV12 " FEATURES . HIGH PERFORMANCE E’ CMOS* TECHNOLOGY — 15 ns Maximum Propagation Delay — Fmax = SO MHz — TTL Compatible 8 * 16 mA Outputs
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75-90m
22V10
JM9/JJ15
20-Pin
125/jw
15qun
T-90-20
24-Pin
lattice 22v10 programming specification
6355ED
GAL22V10
18v10
2cv11
gal22v10-15
9H327
2cv1
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-422LFB721 3.3 V OPERATION 2M-WORD BY 72-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-422LFB721 is a 2,097,152 words by 72 bits dynamic RAM module on which 9 pieces of 16 M DRAM : ^¡PD4217805L are assembled.
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MC-422LFB721
72-BIT
MC-422LFB721
PD4217805L
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fujitsu PCMCIA flash
Abstract: No abstract text available
Text: •T o T o p f tìm u p i In d e x MEMORY ÌBI S MB98A809B x -/810B x -/811B x -/812B x -25 FLASH ERASABLE AND PROGRAMMABLE MEMORY CARD 512 K/1 M/2 M/4 M-BYTE • DESCRIPTION The Fujitsu MB98A809Bx, MB98A810Bx, MB98A811Bx and MB98A%l2Bx are Flash electrically erasable and
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MB98A809B
-/810B
-/811B
-/812B
MB98A809Bx,
MB98A810Bx,
MB98A811Bx
MB98A
16-bit
F9704
fujitsu PCMCIA flash
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68-PIN
Abstract: 84-PIN cpga pinout 208-pin cpga
Text: Military 5.0V pASIC 1 Family Military 5.0V pASIC 1 Family - Very-High-Speed CMOS FPGA Military 5.0V pASIC 1 Family DEVICE HIGHLIGHTS FEATURES Device Highlights Features Very High Speed • ViaLink“ metal-to-metal programmable technology, allows counter speeds over 150 MHz and
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24x32B
CF208
M/883C
8x12B
12x16B
16x24B
24x32B
68-pin
84-pin
CG144
cpga pinout
208-pin cpga
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22v10 gal
Abstract: GAL22V10G
Text: Lattice Semiconductor GAL22V10 Family G A L I S V IO G AL22V10 Corporation FE A TU R E S • HIGH PERFORMANCE E’ CMOS* TECHNOLOGY — 15 ns Maximum Propagation Delay — Fmax = 50 MHz — TTL Compatible 8 -1 6 mA Outputs — UltraMOS III Advanced CMOS Technology
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GAL22V10
AL22V10
AL26C
22V10
100ns
22v10 gal
GAL22V10G
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