so8 footprint
Abstract: sot669 package SO8 package PSMN026-80YS sot669 PSMN012-100YS PSMN1R2-25YL PSMN1R3-30YL PSMN1R5-25YL PSMN1R7-30YL
Text: New Trench 6 MOSFETs in a Power-SO8 package 25 V to 100 V MOSFETs in Power-SO8 We’ve extended our range of Trench 6 MOSFETs with new devices at 60 V and 100 V in the LFPAK SOT669 package. NXP leads the way with its range of Trench 6 MOSFETs in LFPAK (Loss Free PAcKage). By combining Trench 6 silicon
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OT669)
PSMN5R5-60YS)
so8 footprint
sot669 package
SO8 package
PSMN026-80YS
sot669
PSMN012-100YS
PSMN1R2-25YL
PSMN1R3-30YL
PSMN1R5-25YL
PSMN1R7-30YL
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Untitled
Abstract: No abstract text available
Text: PRODUCT DETAIL Part Num: IXUV170N075S Description: POWER DEVICES > DISCRETE MOSFETs > N-Channel: Trench-Gate Power MOSFETs > 75V 1st Generation Trench Gate Power MOSFETs Configuration: Single Package Style: PLUS-220 SMD Status: Active Part Parameter IXUV170N075S
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IXUV170N075S
PLUS-220
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diode TA 20-08
Abstract: P-channel Trench MOSFET MOSFET with Schottky Diode schottky diode 100A DIODE marking 8L MOSFET 20V 100A Bi-Directional P-Channel mosfet
Text: SPC4703 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC4703combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an DFN3X2-8L package. The Trench MOSFET is the P-Channel enhancement mode power
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SPC4703
SPC4703combines
-20V/-3
diode TA 20-08
P-channel Trench MOSFET
MOSFET with Schottky Diode
schottky diode 100A
DIODE marking 8L
MOSFET 20V 100A
Bi-Directional P-Channel mosfet
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ISL9N2357D3ST
Abstract: N2357 n2357d
Text: ISL9N2357D3ST Data Sheet June 2002 30V, 0.007 Ohm, 35A, N-Channel UltraFET Trench Power MOSFET UltraFET® Trench UltraFET® Trench from Fairchild is a new advanced MOSFET technology that achieves the lowest possible onresistance per silicon area while maintaining fast switching
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ISL9N2357D3ST
5600pF
ISL9N2357D3ST
N2357
n2357d
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P-Channel MOSFET code 1A
Abstract: P-channel Trench MOSFET Bi-Directional P-Channel mosfet SPC6801 SPC6801ST6RG 6P marking P-channel MOSFET VGS -25V
Text: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect
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SPC6801
SPC6801combines
-30V/-2
105ise
P-Channel MOSFET code 1A
P-channel Trench MOSFET
Bi-Directional P-Channel mosfet
SPC6801
SPC6801ST6RG
6P marking
P-channel MOSFET VGS -25V
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Schottky Diode 20V 5A
Abstract: Bi-Directional P-Channel mosfet IR P-Channel mosfet SPC6801 SPC6801ST6RG P-Channel MOSFET code 1A
Text: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect
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SPC6801
SPC6801combines
-30V/-2
105ise
Schottky Diode 20V 5A
Bi-Directional P-Channel mosfet
IR P-Channel mosfet
SPC6801
SPC6801ST6RG
P-Channel MOSFET code 1A
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tea1761
Abstract: heat sink to220 Silicon controller rectifier TEA1750 package to220 PSMN1R6-30PL PSMN5R0-80PS PSMN2R0-30PL PSMN7R6-60PS PSMN3R0-60PS
Text: New high-performance Trench 6 MOSFETs in a TO220 package for power management applications Giving you more choice with an extended portfolio of Trench 6 MOSFETs in TO220 We’ve extended our range of Trench 6 MOSFETs with new devices in the industry-standard TO220
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Untitled
Abstract: No abstract text available
Text: SNN0310Q Advanced N-Ch Trench MOSFET 100V, 3A N-Channel Power Trench MOSFET Features • Max. RDS ON = 150m at VGS = 10V, ID = 2A Low gate charge: Qg=18nC (Typ.) High performance trench technology for extremely low RDS(on) 100% avalanche tested
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SNN0310Q
OT-223
24-NOV-11
KSD-T5A012-000
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Abstract: No abstract text available
Text: PRODUCT DETAIL Part Num: IXTC180N10T Description: POWER DEVICES > DISCRETE MOSFETs > N-Channel: Trench-Gate Power MOSFETs > 55V to 280V Trench MOSFETs Configuration: Single Package Style: ISOPLUS220 Status: Phase out/Obsolete: Contact the factory for availability and last time buys.
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IXTC180N10T
ISOPLUS220â
OPLUS220â
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Abstract: No abstract text available
Text: PRODUCT DETAIL Part Num: IXTC230N085T Description: POWER DEVICES > DISCRETE MOSFETs > N-Channel: Trench-Gate Power MOSFETs > 55V to 280V Trench MOSFETs Configuration: Single Package Style: ISOPLUS220 Status: Phase out/Obsolete: Contact the factory for availability and last time buys.
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IXTC230N085T
ISOPLUS220â
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Abstract: No abstract text available
Text: FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14m: Features General Description Max rDS on = 14m: at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of advanced Power Trench Fairchild Semiconductor‘s process. It has been optimized for power management
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FDMC8878
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Abstract: No abstract text available
Text: FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14m: Features General Description Max rDS on = 14m: at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management
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FDMC8878
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FDMC8878/MAX498CWI-T-datasheet
Abstract: No abstract text available
Text: FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14m: Features General Description Max rDS on = 14m: at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of advanced Power Trench Fairchild Semiconductor‘s process. It has been optimized for power management
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FDMC8878
FDMC8878/MAX498CWI-T-datasheet
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TO220 package
Abstract: PSMN4R3-30PL PSMN trench PSMN012-80PS PSMN050-80PS PSMN1R6-30PL PSMN2R0-30PL PSMN2R2-40PS PSMN4R4-80PS
Text: Ten new high-performance Trench 6 MOSFETs in a TO220 package for power supply and motion control Giving you more choice with an extended portfolio of Trench 6 MOSFETs in TO220 We’ve extended our range of Trench 6 MOSFETs with ten new devices in the industry-standard
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FDMC4435BZ
Abstract: No abstract text available
Text: FDMC4435BZ tm P-Channel Power Trench MOSFET -30V, -18A, 20.0mΩ Features General Description Max rDS on = 20.0mΩ at VGS = -10V, ID = -8.5A This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has
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Abstract: No abstract text available
Text: FDMC8854 N-Channel Power Trench MOSFET 30V, 15A, 5.7mΩ Features General Description Max rDS on = 5.7mΩ at VGS = 10V, ID = 15A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management
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FDMC8854
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Abstract: No abstract text available
Text: FDMC8554 N-Channel Power Trench MOSFET 20V, 16.5A, 5mΩ Features General Description Max rDS on = 5mΩ at VGS = 10V, ID = 16.5A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management
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Abstract: No abstract text available
Text: FDMC8854 N-Channel Power Trench MOSFET 30V, 15A, 5.7mΩ Features General Description Max rDS on = 5.7mΩ at VGS = 10V, ID = 15A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management
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Abstract: No abstract text available
Text: FDMC8554 N-Channel Power Trench MOSFET 20V, 16.5A, 5mΩ Features General Description Max rDS on = 5mΩ at VGS = 10V, ID = 16.5A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management
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Abstract: No abstract text available
Text: FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14m: Features tm General Description Max rDS on = 14m: at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced Power Trench process. It has been optimized for power management
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SOT1023
Abstract: lfpak sot1023 sot669 footprint LFPAK footprint so8 footprint PSMN7R0-30YL PSMN1R2-25YL PSMN1R3-30YL PSMN3R0-30YL PSMN3R5-30YL
Text: Nine new Trench 6 MOSFETs in a Power-SO8 package The world’s first < 1 mΩ Power-SO8 MOSFETs at 25 V We’ve extended our range of Trench 6 MOSFETs with nine new devices at 25 V, 30 V, 40 V and 80 V in the LFPAK SOT669 and SOT1023 package. NXP leads the way with its range of Trench 6 MOSFETs in
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OT669
OT1023)
PSMN1R2-25YL)
high-efficien84
SOT1023
lfpak sot1023
sot669 footprint
LFPAK footprint
so8 footprint
PSMN7R0-30YL
PSMN1R2-25YL
PSMN1R3-30YL
PSMN3R0-30YL
PSMN3R5-30YL
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IXAN0021
Abstract: MOSFET Based Chopper IXAN0022 VWM350-0075P FMM150-0075P IXUC100N055 IXUC200N055 VMM1500-0075P trench relay MOSFET Based Chopper applications
Text: IXAN0021 New Trench Power MOSFETs in Isolated Packages Abstract Andreas Lindemann IXYS Semiconductor GmbH Postfach 1180, D { 68619 Lampertheim www.IXYS.net This paper presents a new family of power semiconductor components with low voltage trench MOSFETs in isolated packages: MOSFET and packaging technologies are brie y
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IXAN0021
IXAN0022
IXAN0021
MOSFET Based Chopper
IXAN0022
VWM350-0075P
FMM150-0075P
IXUC100N055
IXUC200N055
VMM1500-0075P
trench relay
MOSFET Based Chopper applications
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3006S
Abstract: 10-6327-01
Text: N-Channel Dual CoolTM Power Trench SyncFETTM 30 V, 49 A, 1.9 mΩ Features General Description Dual CoolTM Top Side Cooling PQFN package SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench®
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FDMS3006SDC
FDMS3006SDC
3006S
10-6327-01
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Abstract: No abstract text available
Text: N-Channel Dual CoolTM Power Trench SyncFETTM 30 V, 49 A, 1.9 mΩ Features General Description ̈ Dual CoolTM Top Side Cooling PQFN package ̈ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench®
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