TRC 561 A3 DIAGRAM Search Results

D1437

Abstract: QFJ044-P-0650 44-PIN LH532048 561 A7
Contextual Info: CMOS 2M 128K x 16 Mask-Programmable ROM • 131,072 words × 16 bit organization • Access time: 100 ns (MAX.) PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TOP VIEW • Static operation NC 1 40 VCC CE 2 39 NC • TTL compatible I/O D15 3 38 A16 4 • Three-state outputs

TRC 561 a3 diagram

Abstract: S71214-00-000 555H SST34HF1681 S71214
Contextual Info: 16 Mbit Concurrent SuperFlash + 8 Mbit SRAM ComboMemory SST34HF1681 SST34HF16818 Mb Flash x16 Concurrent SuperFlash ComboMemory Advance Specifications FEATURES: • Flash Organization: 1M x16 • Dual-Bank Architecture for Concurrent Read/Write Operation

S71214-00-000

Abstract: S71214 s7-1214 555H SST34HF1681
Contextual Info: 16 Mbit Concurrent SuperFlash + 8 Mbit SRAM ComboMemory SST34HF1681 SST34HF168116Mb CSF x16 + 8Mb SRAM (x16) MCP ComboMemory Preliminary Specifications FEATURES: • Flash Organization: 1M x16 • Dual-Bank Architecture for Concurrent Read/Write Operation

MAY94

Abstract: RASOA11
Contextual Info: HY5116100 Series «HYUNDAI 16M X 1-bit CMOS DRAM DESCRIPTION The HY5116100 is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5116100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

334-B

Abstract: HN62314BP
Contextual Info: HN62314B Series HN62334B Series 4M 512K x 8-bit Mask ROM • DESCRIPTION The Hitachi HN62314B/HN62334B Series is a 4-Megabit CMOS Mask Programmable Read Only Memory organized as 524,288 x 8bit. The low power consumption of this device makes it ideal for

Contextual Info: HY51V17400B Series •HYUNDAI 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17400B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY 51V17400B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

HYM53641

Contextual Info: •HYUNDAI SEMICONDUCTOR HYM 536410 B S e rie s 4M X 36-bit CMOS ORAM MODULE PRELIMINARY DESCRIPTION The HYM53641 OB is a 4M x 36-blt Fast page mode CMOS DRAM module consisting of nine HY5117400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each DRAM.

Contextual Info: •HYUNDAI H Y 5 1 1 6 1 0 0 S e r ie s 16Mx1-btt C M O S D R A M DESCRIPTION "The HY5116100 is the new generation and fast dynamic RAM organized 16,777,216x 1-bit. The HY5116100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: O K I Semiconductor MSM5 1V4800/SL 524,288-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTIO N The MSM51V4800/SL is a new generation dynamic RAM organized as 524,288-word x 8-bit. The technology used to fabricate the MSM51V4800/SL is OKI's CMOS silicon gate process

A109D

Abstract: max3843 lcd hyundai WWD 3P hyundai hy 555
Contextual Info: HY51V17400B Series •HYUNDAI 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17400B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY 51V17400B utilizes H yundai's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide

Z0301

Contextual Info: •HYUNDAI HYM53641 OB Series SEMICONDUCTOR 4M X 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536410B is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of nine HY5117400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. Q.22pF decoupling capacitor is mounted for each DRAM.

Contextual Info: NMC2147H National SSA Semiconductor NMC2147H 4096 x 1-Bit Static RAM G eneral D e scription Features The NMC2147H is a 4096-word by 1-bit static random ac­ cess memory fabricated using N-channel silicon-gate tech­ nology. All internal circuits are fully static and therefore re­

Contextual Info: j SAMSUNG ELECTRONICS INC 42E D • TTbMlME 00104SG 4 KMM591000N DRAM MODULES 1 M x 9 DRAM S IM M Memory Module FEATURES GENERAL DESCRIPTION ’" ' The Samsung KMM591000N is a 1M bit x 9 Dynamic RAM high density memory module. The Samsung KMM591000N consist of. two 4M b it DRAMs

ABO-20 L

Abstract: 1mx1 DRAM
Contextual Info: H Y 5 1 1 6 1 0 0 • H Y U N D A I S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100 is the new generation and fast dynamic RAM organized 16,777,216x 1-bit. Ttie HY5116100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: November 1993 Edition 2.0 FUJITSU DATA SHEET : MB82009-20/-25 CMOS 1M-BIT HIGH SPEED SRAM 131,072-WORD X 9-BIT HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82009 is 131,072-word x 9-bit high speed static random access m em ory fabricated w ith CMOS technology.

SO DIMM DRAM 72Pin Connector Pinout

Contextual Info: 72-PIN SO-DIMMS STI322004D2-60VG 2M X 32 Bits DRAM SO-DIMM EDO Memory Module FEATURES • GENERAL DESCRIPTION Performance range: tRAC 60ns tCAC 17ns tRC 104ns The Simple Technology STI322004D2-60VG is a 2M x 32 bits Dynamic RAM high density memory module The Simple

Contextual Info: KMM366F400BK KMM366F41OBK DRAM MODULE K M M 366F400B K & KM M 366F410BK ED O Mode w ithout buffer 4Mx64 DRAM DIMM based on 4Mx4, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40 1 0BK is a 4M bit x 64 Dynamic RAM high density memory module. The

Contextual Info: H Y 5 1 V 16 4 1 O A S e r ie s “HYUNDAI 4M X 4-bit CMOS DRAM with WPB PRELIMINARY DESCRIPTION The HY51V16410A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16410A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

414256

Abstract: D414256 NEC 20PIN DIP
Contextual Info: NEC /¿P D 414256 2 6 2 ,1 4 4 X 4 -B IT D YN A M IC NMOS RAM NEC Electronics Inc. P R E L IM IN A R Y INFORMATION Description Pin Configurations The //PD414256 is a 262,144-word by 4-bit dynamic N-channel MOS random access memory RAM de­ signed to operate from a single +5 V power supply. The

gi115

Contextual Info: -«YUNDWI — • H Y M 5 V 6 4 4 1 4 B K - S e r ie s Unbuffered 4Mx64 bit EDO DRAM MODULE based on 4Mx4 DRAM, 3.3V, 2K-Refresh GENERAL DESCRIPTION The HYM 5V64414B K-Series is a 4Mx64-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY51V17404B in 24/26 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy

Contextual Info: July 1993 Edition 1.0 FUJITSU DATA SHEET MB85379A-60/-70/-80 CMOS 2M x 40 Fast Page Mode DRAM Module CMOS 2,097,152 x 40 Bit Fast Page Mode DRAM Module The Fujitsu MB85379A is a fully decoded CMOS Dynamic Random Access Memory DRAM Module consisting of twenty MB814400A devices.

Contextual Info: -HYUNDAI HYM572A400A N-Series 4M X 72-bit CMOS DRAM MODULE DESCRIPTION The HYM572A400A is a 4M x 72-bit Fast page mode CMOS DRAM module consisting of eighteen HY5116400A in 24/28 pin TSOP-ll and two 16-bit BiCMOS line drivers in TSSOP on a t68 pin glass-epoxy printed circuit board.

Contextual Info: O K I Semiconductor M S M 5 6 V 1 6 4 0 0 2-Bank x 2,097,152-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTIO N The MSM56V16400 is a 2-bank x 2,097,152-word x 4-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and

MA107040

Contextual Info: MITSUBISHI IS Is DRAM MODULE FAST PAGE MODE DYNAMIC RAM 8 M X 4 0 320 M B I T Max. Access T ype name Load m em ory tim e O u tw a rd d im e n sio n s Data shee-; W x H x D (m m ) page 107.95 x 29.5 x 8.6 3 /1 9 (ns) MH8M40AJ-6 ★ MH8M40NAJ-6 ★ MH8M40AJ-7