TRANSITOR RF 98 Search Results

TRANSITOR RF 98 Result Highlights (5)

Part	Manufacturer	Description
LBAA0QB1SJ-295	Murata Manufacturing Co Ltd	SX1262 MODULE WITH OPEN MCU
GRM-KIT-OVER100-DE-D	Murata Manufacturing Co Ltd	0805-1210 over100uF Cap Kit
LBUA5QJ2AB-828	Murata Manufacturing Co Ltd	QORVO UWB MODULE
LXMSJZNCMH-225	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag
LXMS21NCMH-230	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag

TRANSITOR RF 98 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Transistor BC 1078 Abstract: Transistor BC 1078 transistor transistor marking R2s TRANSISTOR MARKING YB BC 1078 transistor BF 245 C equivalent BI 425 Text: BFP620F E7764 XYs NPN Silicon Germanium RF Transistor Preliminary data High gain low noise RF transistor 3 Small package 1.4 x 0.8 x 0.59 mm 2 4 Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 Outstanding noise figure F = 1.3 dB at 6 GHz Maximum stable gain	Original	PDF	BFP620F E7764 Jul-03-2003 Transistor BC 1078 Transistor BC 1078 transistor transistor marking R2s TRANSISTOR MARKING YB BC 1078 transistor BF 245 C equivalent BI 425
Untitled Abstract: No abstract text available Text: BFP620F XYs NPN Silicon Germanium RF Transistor Preliminary data High gain low noise RF transistor 3 Small package 1.4 x 0.8 x 0.59 mm 2 4 Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 Outstanding noise figure F = 1.3 dB at 6 GHz Maximum stable gain	Original	PDF	BFP620F Feb-20-2003
3904 ic Abstract: 3904 NPN k 4213 transistor k 4213 BFR340L3 Text: BFR340L3 NPN Silicon RF Transistor Preliminary data Low voltage/ Low current operation 3 Transition frequency of 14 GHz High insertion gain 1 Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BFR340L3 EHA07536 Jun-16-2003 3904 ic 3904 NPN k 4213 transistor k 4213 BFR340L3
transistor k 4213 Abstract: BFR340T transitor RF 98 SC75 BFR34* transistor Text: BFR340T NPN Silicon RF Transistor 3 Preliminary data Low voltage/ low current operation Transition frequency of 14 GHz High insertion gain 2 Ideal for low current amplifiers and oscillators 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BFR340T VPS05996 EHA07536 Jul-01-2003 transistor k 4213 BFR340T transitor RF 98 SC75 BFR34* transistor
MJE 131 Abstract: BFR340L3 Text: BFR340L3 NPN Silicon RF Transistor Preliminary data Low voltage/ Low current operation 3 Transition frequency of 14 GHz High insertion gain 1 Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BFR340L3 EHA07536 Dec-17-2001 MJE 131 BFR340L3
TRANSISTOR MARKING NK Abstract: transistor bf 271 p 605 transistor equivalent BFR340T Text: BFR340T NPN Silicon RF Transistor 3 Preliminary data Low voltage/ low current operation Transition frequency of 14 GHz High insertion gain 2 Ideal for low current amplifiers and oscillators 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BFR340T VPS05996 EHA07536 Jan-29-2002 TRANSISTOR MARKING NK transistor bf 271 p 605 transistor equivalent BFR340T
Untitled Abstract: No abstract text available Text: BFP620 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz	Original	PDF	BFP620 VPS05605 OT343 Aug-11-2004
BFP620 Abstract: BFP620 acs BFP620 applications note GFT45 Text: BFP620 NPN Silicon Germanium RF Transistor 3 4 High gain low noise RF transistor Provides outstanding performance for a wide range of wireless applications 2 Ideal for CDMA and WLAN applications Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 VPS05605	Original	PDF	BFP620 VPS05605 OT343 Apr-07-2003 BFP620 BFP620 acs BFP620 applications note GFT45
K 3677 Abstract: No abstract text available Text: BFR340T NPN Silicon RF Transistor 3 Preliminary data Low voltage/ low current operation Transition frequency of 14 GHz High insertion gain 2 Ideal for low current amplifiers and oscillators 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BFR340T VPS05996 K 3677
K 3677 Abstract: marking FA Text: BFR340L3 NPN Silicon RF Transistor Preliminary data Low voltage/ Low current operation 3 Transition frequency of 14 GHz High insertion gain 1 Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BFR340L3 K 3677 marking FA
BFP620 Abstract: No abstract text available Text: BFP620_E7764 NPN Silicon Germanium RF Transistor 3 4 High gain low noise RF transistor Provides outstanding performance for a wide range of wireless applications 2 Ideal for CDMA and WLAN applications Outstanding noise figure F = 0.7 dB at 1.8 GHz	Original	PDF	BFP620 E7764 VPS05605 OT343 Jul-03-2003
Untitled Abstract: No abstract text available Text: BFP620 NPN Silicon Germanium RF Transistor 3 4 High gain low noise RF transistor Provides outstanding performance for a wide range of wireless applications 2 Ideal for CDMA and WLAN applications Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 VPS05605	Original	PDF	BFP620 VPS05605 OT343 Dec-19-2002
marking r4s Abstract: R4S BFP640 BFP640 BFP640 noise figure Text: BFP640 3 NPN Silicon Germanium RF Transistor Preliminary data 4 High gain low noise RF transistor Provides outstanding performance for a wide range of wireless applications 2 Ideal for CDMA and WLAN applications 1 Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	PDF	BFP640 VPS05605 OT343 Jul-25-2002 marking r4s R4S BFP640 BFP640 BFP640 noise figure
infineon marking code L2 Abstract: No abstract text available Text: BFR340T NPN Silicon RF Transistor* • Low voltage/ low current operation • Transition frequency of 14 GHz 2 3 1 • High insertion gain • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BFR340T infineon marking code L2

marking FA Abstract: No abstract text available Text: BFR340L3 NPN Silicon RF Transistor Preliminary data Low voltage/ Low current operation 3 Transition frequency of 14 GHz High insertion gain 1 Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BFR340L3 marking FA
BFR340T Abstract: No abstract text available Text: BFR340T NPN Silicon RF Transistor 3 Preliminary data Low voltage/ low current operation Transition frequency of 14 GHz High insertion gain 2 Ideal for low current amplifiers and oscillators 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BFR340T VPS05996 BFR340T
R4S BFP640 Abstract: BFP640 VPS05605 4ghz s parameters transistor s parameters 4ghz Text: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	PDF	BFP640 VPS05605 OT343 Apr-21-2004 R4S BFP640 BFP640 VPS05605 4ghz s parameters transistor s parameters 4ghz
transitor RF 98 Abstract: BFP620 applications note germanium transistor ac 128 BFP620 Text: BFP620 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz	Original	PDF	BFP620 VPS05605 OT343 Apr-21-2004 transitor RF 98 BFP620 applications note germanium transistor ac 128 BFP620
Untitled Abstract: No abstract text available Text: BFR340F NPN Silicon RF Transistor Preliminary data Low voltage/ low current operation 2 3 Transition frequency of 14 GHz High insertion gain 1 Ideal for low current amplifiers and oscillators ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BFR340F Jan-17-2002 -j100
R4S BFP640 Abstract: BFP640 transistor ph 45 v marking r4s Text: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	PDF	BFP640 VPS05605 OT343 Aug-16-2004 R4S BFP640 BFP640 transistor ph 45 v marking r4s
4ghz s parameters transistor Abstract: No abstract text available Text: BFP640 NPN Silicon Germanium RF Transistor 3 4 BFP640E/L6327 and E/L7764 • High gain low noise RF transistor • Provides outstanding performance 2 for a wide range of wireless applications • Ideal for CDMA and WLAN applications 1 VPS05605 • Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	PDF	BFP640 BFP640E/L6327 E/L7764 L6327 L7764 VPS05605 Mar-01-2004 4ghz s parameters transistor
BFR340F Abstract: G1217 Text: BFR340F NPN Silicon RF Transistor Preliminary data Low voltage/ low current operation 2 3 Transition frequency of 14 GHz High insertion gain 1 Ideal for low current amplifiers and oscillators ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BFR340F Jul-01-2003 -j100 BFR340F G1217
BFP620 Abstract: BGA420 T-25 KF 25 transistor AF 2596 Text: BFP620 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz	Original	PDF	BFP620 OT343 BFP620 BGA420 T-25 KF 25 transistor AF 2596
Untitled Abstract: No abstract text available Text: BFP620 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz	Original	PDF	BFP620 VPS05605 OT343

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TRANSITOR RF 98 Search Results

TRANSITOR RF 98 Result Highlights (5)

TRANSITOR RF 98 Datasheets Context Search

Transistor BC 1078

Untitled

3904 ic

transistor k 4213

MJE 131

TRANSISTOR MARKING NK

Untitled

BFP620

K 3677

K 3677

BFP620

Untitled

marking r4s

infineon marking code L2

marking FA

BFR340T

R4S BFP640

transitor RF 98

Untitled

R4S BFP640

4ghz s parameters transistor

BFR340F

BFP620

Untitled