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    TRANSISTORS CASE Search Results

    TRANSISTORS CASE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS CASE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1am surface mount diode

    Abstract: c845 2GM sot-23 transistor G1 TRANSISTOR SOT 23 PNP 2F PNP SOT23 P1F marking AS3 SOT223 p2f sot-223 c845 TO 92 SOT-223 P1f
    Text: ON Semiconductor Bipolar Transistors Bipolar Transistors Continued Plastic-Encapsulated Transistors (Continued) Plastic-Encapsulated Multiple Transistors Plastic-Encapsulated High-Voltage Amplifier Transistors (Case 29-04 Ñ TO-226AA (TO-92) Ñ PNP) hFE @ IC


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    O-226AA O-236AB OT-23) OT-223) MMBTA42LT1 MMBT5551LT1 BSP52T1 1am surface mount diode c845 2GM sot-23 transistor G1 TRANSISTOR SOT 23 PNP 2F PNP SOT23 P1F marking AS3 SOT223 p2f sot-223 c845 TO 92 SOT-223 P1f PDF

    small signal transistors

    Abstract: No abstract text available
    Text: 2N3503 Silicon Transistors - NPN/PNP Small Signal Transistors Page 1 of 1 Silicon Transistors - NPN/PNP Small Signal Transistors Contact Factory for complete specification. STI Type 2N3503 Tj Notes VCBO hFE max hfe hFE A fT Polarity PNP VCEO 60 VCE Case Style


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    2N3503 2N3503 O-205AD/TO-39 07-Sep-2010 small signal transistors PDF

    BC857BM3T5G

    Abstract: BC487 "cross-reference" 2N3904 PNP BC237 BC449 "cross-reference" MPS5172 "cross-reference" BC856BM3T5G
    Text: Small−Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General−Purpose Transistors . . . . . . . . . . . . . . . . . . 25 General−Purpose Multiple Transistors . . . . . . . . . . 30 Low Noise and Good hFE Linearity . . . . . . . . . . . . . 31


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    OT-23 SC-59 SC-70 SC-75, SC-90 OT-346 OT-323 OT-416 OT-523, BC857BM3T5G BC487 "cross-reference" 2N3904 PNP BC237 BC449 "cross-reference" MPS5172 "cross-reference" BC856BM3T5G PDF

    2N3906 Darlington transistor

    Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
    Text: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11


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    M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 2N3906 Darlington transistor BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212 PDF

    2N5415

    Abstract: No abstract text available
    Text: 2N5415 2N5416 SILICON PNP TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES PNP TRANSISTORS DESCRIPTION The 2N5415, 2N5416 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal case designed for use in consumer and industrial line-operated applications.


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    2N5415 2N5416 2N5415, 2N5416 2N5415 PDF

    BC327 BC337 noise figure

    Abstract: BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212
    Text: CHAPTER 1 Selector Guide http://onsemi.com 5 http://onsemi.com 6 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11


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    M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 BC327 BC337 noise figure BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212 PDF

    SPEC-A38

    Abstract: mmst3906 2n3906 transistors UMT3906
    Text: Transistors SPEC-A38 609 Transistors FElectrical characteristic curves 610 UMT3906/SST3906/MMST3906/2N3906 Transistors UMT3906/SST3906/MMST3906/2N3906 FElectrical characteristic curves 611 Transistors FElectrical characteristic curves 612 UMT3906/SST3906/MMST3906/2N3906


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    SPEC-A38) UMT3906/SST3906/MMST3906/2N3906 SPEC-A38 mmst3906 2n3906 transistors UMT3906 PDF

    2N5416

    Abstract: 2N5415 P008B pnp transistors
    Text: 2N5415 2N5416 SILICON PNP TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES PNP TRANSISTORS DESCRIPTION The 2N5415, 2N5416 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal case designed for use in consumer and industrial line-operated applications.


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    2N5415 2N5416 2N5415, 2N5416 Collecto-50 2N5415 P008B pnp transistors PDF

    2N5415

    Abstract: 2N5416 2n5416 st
    Text: 2N5415 2N5416  SILICON PNP TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES PNP TRANSISTORS DESCRIPTION The 2N5415, 2N5416 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal case designed for use in consumer and industrial line-operated applications.


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    2N5415 2N5416 2N5415, 2N5416 2N5415 2n5416 st PDF

    Untitled

    Abstract: No abstract text available
    Text: IMH21 Transistors Dual digital transistors IMH21 Features In addition to the features of regular digital transistors. 1 Low saturation voltage, typically VCE sat) =40mV at IC / IB=50mA / 2.5mA, makes these transistors ideal for muting circuits. 2) These transistors can be used at high current levels,


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    IMH21 600mA. DTC614T PDF

    DTC323TU

    Abstract: No abstract text available
    Text: DTC323TU / DTC323TK / DTC323TS Transistors Digital transistors built-in resistor DTC323TU / DTC323TK / DTC323TS z Circuit schematic zFeatures In addition to the features of regular digital transistors, 1) Low VCE(sat) makes these transistors ideal for muting


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    DTC323TU DTC323TK DTC323TS 600mA) DTC323TS PDF

    AT-41435

    Abstract: transistor D 2394 ATF pHEMT 5989-0925EN ATF-511P8 AT-41533 ATF-38143 AT-41486 ATF-501P8 LPCC
    Text: Agilent Technologies Transistors Selection Guide Silicon Bipolar Transistors NFo and Ga are specified at a low noise bias point, while P1 dB, G1 dB, and |S21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature


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    AT-30511 OT-143 AT-30533 OT-23 AT-31011 AT-31033 5988-9509EN 5989-0925EN AT-41435 transistor D 2394 ATF pHEMT 5989-0925EN ATF-511P8 AT-41533 ATF-38143 AT-41486 ATF-501P8 LPCC PDF

    318F

    Abstract: NUS2401SNT1 SMD310
    Text: NUS2401SNT1 Integrated PNP/NPN Digital Transistors Array This new option of integrated digital transistors is designed to replace a discrete solution array of three transistors and their external resistor bias network. BRTs Bias Resistor Transistors contain a


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    NUS2401SNT1 74/Case r14525 NUS2401SNT1/D 318F NUS2401SNT1 SMD310 PDF

    74 series IC free

    Abstract: 74 Series IC Manual 318F NUS2401SNT1 NUS2401SNT1G
    Text: NUS2401SNT1 Integrated PNP/NPN Digital Transistors Array This new option of integrated digital transistors is designed to replace a discrete solution array of three transistors and their external resistor bias network. BRTs Bias Resistor Transistors contain a


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    NUS2401SNT1 SC-74/Case NUS2401SNT1/D 74 series IC free 74 Series IC Manual 318F NUS2401SNT1 NUS2401SNT1G PDF

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


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    LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60 PDF

    HF 4093 N

    Abstract: 264 bf ESM 510 BF245 BF247 BF256 C11M ms 4092 fet BC264 ESM4091
    Text: n channel field effect transistors — plastic case transistors à effet de champ canal n — boîtier plastique th o m s o n -c s f fet dual transistors, n channel transistors double à effet de champ-canal n Type ESM25 ESM 25 A 2N 5198 2N 5199 Application


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    C12ss HF 4093 N 264 bf ESM 510 BF245 BF247 BF256 C11M ms 4092 fet BC264 ESM4091 PDF

    W1P 59 transistor

    Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
    Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


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    197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn PDF

    Transistor BSX 95

    Abstract: BSX48 BSX49 Q60218-X48 Q60218-X49 IJ.AN
    Text: BSX 48, BSX 49 NPN Transistors fo r switching applications Transistors BSX 48 and BSX 49 are double diffused epitaxial silicon planar transistors in a case 18 A 3 DIN 41876 T O -18 . The collector is electrically connected to the case. The transistors are for use as high-speed switches, and are particularly suitable for


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    Q60218-X48 Q60218-X49 105iiA BSX48 Transistor BSX 95 BSX48 BSX49 Q60218-X48 Q60218-X49 IJ.AN PDF

    BSY 34 D

    Abstract: BSY34 b1398 BSY58 Q60218-Y34 Q60218-Y58 Z010
    Text: BSY 34, BSY58 NPN RF Transistors for switching applications Transistors B S Y 34 and B S Y 58 are double diffused epitaxial NPN silicon planar transistors in a case 5 C 3 DIN 41873 TO -3 9 . The collector is electrically connected to the case. The transistors are for use as high-speed switches and are particularly for driving


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    BSY58 Q60218-Y34 Q60218-Y58 BSY34 Hx-40 BSY 34 D BSY34 b1398 BSY58 Q60218-Y58 Z010 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b'lE ]> □ □27'UT 5b7 • APX bbS3T31 BSX45 to 47 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes with the collector connected to the case. These transistors are intended for general industrial applications.


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    bbS3T31 BSX45 BSX45 BSX46 BSX47 BSX46â PDF

    PN4393

    Abstract: PN4391 PN4392
    Text: PN4391 PN4392 PN4393 Philips Components N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical n-channel junction field-effect transistors in plastic TO-92 envelopes with the gate connected to the case. The transistors are intended for use in analog switches, commutators and


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    PN4391 PN4392 PN4393 PN4393 PDF

    KN303

    Abstract: n306a APM 2510 2SF100 C12S Scans-048 apm 2510 n KF190 silicium power transistor broadcas amplifier
    Text: nOAEBblE TPAH3HCTOPBI FIELD-EFFECT TRANSISTORS FELDEFFEKTTRANSISTOR EN TRANSISTORS A EFFET DE CHAMP IST 2 riEPEHEHb TPAH3MCTOPOB LIST OF TRANSISTORS TRANSISTORENLISTE LISTE DE TRANSISTORS Grp. Page Knioir-KmoiE 11 Kni03E-Kni03M Kni03EP-KTI103MP 15 KriC104A-KnC104XI .


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    KriC104A-KnC104XI KnC202A-KnC20 -Kn202E Kni03E-Kni03M Kni03EP-KTI103MP Kn201E-Kn201/l Kn301B Kn302A-Kn302r. Kn303A-Kn303H Kn304A. KN303 n306a APM 2510 2SF100 C12S Scans-048 apm 2510 n KF190 silicium power transistor broadcas amplifier PDF

    BC309 equivalent

    Abstract: st 393 8-pin T0-226AE
    Text: MOTOROLA SC XSTRS/R F MbE D • b3b?2S4 Oa'Obll b ■MOTb SMALL-SIGNAL BIPOLAR TRANSISTORS — PLASTIC-ENCAPSULATED TRANSISTORS (continued) 7 ^ jZ 7 - Cs5 Table 1. Plastic-Encapsulated General-Purpose Transistors (continued) Case 29-03 — T0-226AE (1-WATT T0-92)


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    T0-226AE T0-92) BDC01D BC309 equivalent st 393 8-pin T0-226AE PDF

    BC485

    Abstract: BC487 transistors BC 487 BC489
    Text: B C 485 B C 487 B C 489 NPN SILICON PLANAR EPITAXIAL TRANSISTORS IVIICFRD ELEC CASE T0-92F BC485, BC487 and BC489 are NPN silicon planar epitaxial transistors designed for use as high voltage high current driver and output transistors. ABSOLUTE MAXIMUM RATINGS


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    BC485, BC487 BC489 I0-92F BC485 625mW 500mA 100mA transistors BC 487 PDF