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    TRANSISTORS BD 133 Search Results

    TRANSISTORS BD 133 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS BD 133 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IL311ANM

    Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D
    Text: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.


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    603al

    Abstract: irfb3306 TMC603A schematic diagram 48v bldc motor speed controller smd diode marking BM 06 motor Speed Sensor circuit diagram using 555 timer ic si7164 Zener diode smd marking e2 smd TRANSISTOR H2 MARKING CODE TMC603
    Text: TMC603A DATA SHEET V. 1.16 / 2010-May-14 1 TMC603A – DATASHEET Three phase motor driver with BLDC back EMF commutation hallFX and current sensing TRINAMIC Motion Control GmbH & Co. KG Sternstraße 67 D – 20357 Hamburg GERMANY www.trinamic.com 1 Features


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    PDF TMC603A 2010-May-14) TMC603A TMC603 603al irfb3306 schematic diagram 48v bldc motor speed controller smd diode marking BM 06 motor Speed Sensor circuit diagram using 555 timer ic si7164 Zener diode smd marking e2 smd TRANSISTOR H2 MARKING CODE

    BZV55C12

    Abstract: No abstract text available
    Text: TMC603A DATA SHEET V. 1.16 / 2010-May-14 1 TMC603A – DATASHEET Three phase motor driver with BLDC back EMF commutation hallFX and current sensing TRINAMIC Motion Control GmbH & Co. KG Sternstraße 67 D – 20357 Hamburg GERMANY www.trinamic.com 1 Features


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    PDF TMC603A 2010-May-14) TMC603A TMC603 BZV55C12

    Keithley s900

    Abstract: n4212 Keithley 7700 N4050 3B103 3B159 N 4212 transistor N4212 RT9602 BdP 285
    Text: DATE D’ORIGINE DATE ORIGINATED AUTEUR/ORIGINATOR: RT96-024 MARCH 22 1996 SEMICONDUCTOR OBJECT/SUBJECT: NUMÉRO DE RAPPORT REPORT NUMBER PAGE / SHEET 1 de/ of 80 Final Electrical Parameter Capability and Design Rule Evaluation of the 1.2 µm N-Well Single Poly Double Metal Process.


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    PDF RT96-024 enviro1995, Keithley s900 n4212 Keithley 7700 N4050 3B103 3B159 N 4212 transistor N4212 RT9602 BdP 285

    schematic diagram 48v bldc motor speed controller

    Abstract: irfb3306 smd diode marking BM 47 MAR 544 MOSFET TRANSISTOR TRANSISTOR SMD MARKING CODE lpw TMC603 Power MOSFET 50V 10A IN DPACK schematic diagram 48v dc motor speed controller marking code LPW SMD TRANSISTOR "Common rail"
    Text: TMC603 DATA SHEET V. 1.06 / 26. Mar. 2009 1 TMC603 – DATASHEET Three phase motor driver with BLDC back EMF commutation hallFX and current sensing TRINAMIC Motion Control GmbH & Co. KG Sternstraße 67 D – 20357 Hamburg GERMANY www.trinamic.com 1 Features


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    PDF TMC603 TMC603 schematic diagram 48v bldc motor speed controller irfb3306 smd diode marking BM 47 MAR 544 MOSFET TRANSISTOR TRANSISTOR SMD MARKING CODE lpw Power MOSFET 50V 10A IN DPACK schematic diagram 48v dc motor speed controller marking code LPW SMD TRANSISTOR "Common rail"

    Untitled

    Abstract: No abstract text available
    Text: TMC389 DATASHEET V. 1.14 / 2013-MAR-25 1 TMC389–DATASHEET Energy saving high resolution microstepping three phase stepper driver with step and direction interface and external power stage TRINAMIC Motion Control GmbH & Co. KG Hamburg, GERMANY www.trinamic.com


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    PDF TMC389 2013-MAR-25) TMC389â 2011-APR-22 2011-JUL-26 15MHz 13MHz) 2011-DEC-29

    TMC388

    Abstract: smd schottky diode sg1 transistor smd marking cu1 transistor smd marking cfr transistor smd marking cu3 tmc389 schematic diagram e FDS8958a si3529 transistor BD 222 SMD CU2 STOP MOTION DETECTION
    Text: TMC389 DATASHEET V. 1.13 / 2012-AUG-13 1 TMC389–DATASHEET Energy saving high resolution microstepping three phase stepper driver with step and direction interface and external power stage TRINAMIC Motion Control GmbH & Co. KG Hamburg, GERMANY www.trinamic.com


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    PDF TMC389 2012-AUG-13) TMC388 15MHz 13MHz) smd schottky diode sg1 transistor smd marking cu1 transistor smd marking cfr transistor smd marking cu3 schematic diagram e FDS8958a si3529 transistor BD 222 SMD CU2 STOP MOTION DETECTION

    TMC388

    Abstract: transistor BD 222 SMD Diode smd code cv4
    Text: TMC389 DATASHEET V. 1.13 / 2012-AUG-13 1 TMC389–DATASHEET Energy saving high resolution microstepping three phase stepper driver with step and direction interface and external power stage TRINAMIC Motion Control GmbH & Co. KG Hamburg, GERMANY www.trinamic.com


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    PDF TMC389 2012-AUG-13) TMC389â 2011-APR-22 2011-JUL-26 15MHz 13MHz) 2011-DEC-29 TMC388 transistor BD 222 SMD Diode smd code cv4

    SOT87

    Abstract: BDT86 BDT88 BDT81 BDT82 BDT83 BDT84 BDT85 BDT87 l82a
    Text: / MAGNA BDT81; BDT83 BDT85; BDT87 SILICON POWER TRANSISTORS N-P-N epitaxial base transistors in a T O -2 2 0 plastic envelope, designed for use in audio output stages and generai am plifier and switching applications. P-N-P complements are B D T 8 2 , B D T 84, B D T86 and BD T88.


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    PDF BDT81; BDT83 BDT85; BDT87 aTO-220 BDT82, BDT84, BDT86 BDT88. 13H3S SOT87 BDT88 BDT81 BDT82 BDT84 BDT85 BDT87 l82a

    BD135-BD137-BD139

    Abstract: BP135 BD135,BD137,BD139
    Text: 7^25537 002037? 0 H *57 "T^SS'iS S C S -T H O M S O N HOOœiLtlOïï^ÛiDtgi S G S-THOMSON BD135 B D 137-BD 139 30E D MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESC RIPTIO N The BD135, BD137, BD139 are silicon epitaxial pla­ nar NPN transistors in Jedec TO-126 plastic


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    PDF BD135 137-BD BD135, BD137, BD139 O-126 BD136, BD138 BD140 300jis, BD135-BD137-BD139 BP135 BD135,BD137,BD139

    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157


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    PDF AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175

    Transistors bd 133

    Abstract: BD304 2n3054 81 220 bdy82 2N3713 2N6101 2N6111 2N3055 bd 135
    Text: PNP Power Transistors « Epitaxial Bas« » L F Am plifier and switching Transistors de puissance PNP « Base 6pitaxi6e » A m plification e t com m utation B F Type Compl. I Case j B oitier Ptot h21E W V cE O (V) TO 66 29 -5 5 -4 25 TO 66 25 -6 0 -4 20


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    PDF TPu75 2N6101 Transistors bd 133 BD304 2n3054 81 220 bdy82 2N3713 2N6111 2N3055 bd 135

    BD2438

    Abstract: BD243 BD243A B0243C BD243B BD243C BD244 BD244A BD244B BD244C
    Text: Öl 387 5081 G E SOLID D fT|3ö?5aai STATE 01E QQ1 7 5 3 t i 17536 1 1-33 D - nro btectron Power Transistors File Num ber 673 BD243, BD243A, BD243B, BD243C


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    PDF GG1753fc. BD243, BD243A, BD243B, BD243C BD244, BD244A, BD244B, BD244C BD2438 BD243 BD243A B0243C BD243B BD243C BD244 BD244A BD244B BD244C

    bpx28

    Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
    Text: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten


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    2N 3055

    Abstract: 2N3055 ESM434 BDX 71 2N5294 2N6109 2N6111 ESM435 ESM142 84132N
    Text: N PN Power transistors « Homobase » L l: amplifier and switching » Transistors de puissance « Homobase » Amplification et commutation BF Case f*tot m * B oîtie r O ui _ Compì. > Type C (A ^21E m in max A / (A) Tease 25 C / v CEsat iv i y 'B (A )


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    PDF TPu75 2N5294 2N6111 2N6109 2N 3055 2N3055 ESM434 BDX 71 ESM435 ESM142 84132N

    transistor kt 326

    Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816
    Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j | R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice


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    t056

    Abstract: BLY93 2SC765 BDY88 BDY89 MSA8508 RE3797 SE3030 SJ 96 B5022
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E No. H H TYPE N o. I I M IN . M A X P c ID E R A T E FREE A IR @ J to C 2 5 'C


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    PDF NPN110. Y220a T0126 BD433B BD433C BD435A BD435B BD435C t056 BLY93 2SC765 BDY88 BDY89 MSA8508 RE3797 SE3030 SJ 96 B5022

    ic ir 2112

    Abstract: 2112-2 SDA2112-2 Scans-00138866 Transistors bd 133
    Text: S IE M E N S SDA 2112-2 TV PLL for 125 kHz Resolution The SDA 2112-2 is fabricated in ASBC technology. In connection with a VCO tuner and a high-speed 1:64 divider, it forms a digitally programmable phase-locked loop for TV sets designed to use the PLL frequency sythesis tuning principle. The PLL enables crystalcontrolled setting of the tuner oscillator frequency for a 125 kHz resolution in the frequency


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    BOX34C

    Abstract: Transistors bd 133 BOX34B X33C 3B33C 750 V dc 100 amp GTO X33A bd 1382 semiconductor BDX33 bd 139 package
    Text: m o to ro la sc x s trs /r 12E D I f b3t7SSM 000477=1 T | 7-33-29 • 7 ^ 3 3 -3 / MOTOROLA SEMICONDUCTOR TECHNICAL DATA DARLIN GTO N COM PLEMENTARY SILICO N POWER TRANSISTORS . designed fo r geneial purpose and low speed NPN PMP BDX33 B0X33A BDX33B BDX33C


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    PDF BDX33C. BDX33 B0X33A BDX33B BDX33C BDX34 BDX34A BDX34B BDX34C BDX33, BOX34C Transistors bd 133 BOX34B X33C 3B33C 750 V dc 100 amp GTO X33A bd 1382 semiconductor bd 139 package

    D 5038 Transistor Horizontal

    Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
    Text: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching


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    PDF CB-69 14f4g D 5038 Transistor Horizontal amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58

    60AF

    Abstract: BDT60AF BDT60BF BDT60F BDT61AF BDT61BF BDT61CF BDT61F
    Text: BDT60F; BDT60AF J ^BDT60BF; BDT60CF SILICON DARLINGTON POWER TRANSISTORS PNP silicon power transistors in a monolithic Darlington circuit and housed in a SOT186 envelope with an electrically insulated mounting base. They are recommended for applications such as audio output stages and general purpose amplifiers.


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    PDF BDT60F; BDT60AF BDT60BF; BDT60CM OT186 BDT61F, BDT61AF, BDT61BF BDT61CF. BDT60F 60AF BDT60AF BDT60BF BDT61AF BDT61CF BDT61F

    TRANSISTOR BD 338

    Abstract: Philips 336 transistor 338 BD 338 N 1507-50A BD335 BD331
    Text: BD332; 334 BD336; 338 PH I L I P S INTERNATIONAL SbE J> I 7 1 1 0 0 2 b 0 0 4 2 0 =^ lfl4 I H P H I N SILICON DARLINGTON POWER TRANSISTORS T'13-3i P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; plastic SO T-82 envelope for clip mounting; can also be soldered


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    PDF BD332; BD336; 13-3i BD337. T--33--31 711002b TRANSISTOR BD 338 Philips 336 transistor 338 BD 338 N 1507-50A BD335 BD331

    IAO5 Sharp

    Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
    Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The


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    PDF Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071

    1n52408

    Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
    Text: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which


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    PDF 301PT1115 302PT1115 303PT1115 311PT1110 312PTI110 319PTI110 327PTI110 351PT1115 353PT1115 1n52408 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC