TRANSISTORS AIO 20 Search Results

Contextual Info: September 1990 Edition 1.0 DATA SHEET MB82B88-15/-20 256K-BIT HIGH-SPEED BiCMOS SRAM 32K Words x 8 Bits BiCMOS High-Speed Static Random Access Memory The Fujitsu M B82B88 is a high-speed static random access memory organized as 32,768 words x 8 bits and fabricated with C M O S technology. B iC M O S technology is

2SC3610

Contextual Info: Power T ransistors 2SC3610 2SC3610 Silicon NPN Epitaxial Planar Type Package Dimensions Video Amplifier U nit ! mm • Features 10.5 ± 0.5 • High transition frequency fT S 4.8max. +—h 9.8max. 1.5max. • Small collector output capacitance (C*) iS +i

Contextual Info: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com

dta143

Contextual Info: Transistors Digital transistors built-in resistors DTA143 EE/DTA143 EUA/DTA143 EKA/ DTA143 ECA/DTA143 ESA •F eatu re s 1) Built-in bias resistors en a b le th e configuration of an inverter circuit without connecting external input resistors (see the equivalent cir­

Dionics DI 297N

Contextual Info: Ï53f •SP D MONOLITHIC DIONICS INC. 65 R U S H M O R E ST., W E S T B U R Y , N .Y . 115 90 P 5 1 6 9 9 7 -7 4 7 4 DI 257P HIGH VOLTAGE DI 267N DI 267P DI 277N DI 277P CONSTANT CURRENT 7 SEGMENT DISPLAY DRIVERS DI 287N DI 287P DI 297N DI 297P 006925 DI 257N

DI297N

Abstract: seven transistors PNP drivers
Contextual Info: D MONOLITHIC DIONICS INC. 65 R U S H M O R E S T ., W E S T B U R Y , N .Y . 11590 516 9 9 7 -74 7 4 HIGH VOLTAGE CONSTANT CURRENT 7 SEGMENT DISPLAY DRIVERS 1 I! DI 257N DI 257P DI 267N DI 267P DI 277N DI 277P DI 287N DI 287P DI 297N DI 297P C IR C U IT DIAGRAMS

MHQ2907

Abstract: MPQ2907 MHQ2906 A040 2N2906 2N2907 MPQ2906 MH02906
Contextual Info: MHQ2906, MHQ2907 SILICON MPQ2906, MPQ2907 QUAD DUAL-IN-LINE PNP SILICON ANNULAR GENERAL-PURPOSE TRANSISTORS QUAD DUAL-IN-LINE PNP SILICON GENERAL-PURPOSE TRANSISTORS . . . designed for general-purpose switching circuits and OC to V H F am plifier applications.

Contextual Info: September 1990 Edition 1.0 FUJITSU DATA SHEET MB82B201-25/-35 4M-BIT HIGH-SPEED BiCMOS SRAM 4M-Bit xl or x4 Configurable BiCMOS High-Speed Static Random Access Memory The Fujitsu MB82B201 is a 4M-bit high speed static random access memory fabricated with CMOS technology. The memory organization of MB82B201 can be

STDC2150

Contextual Info: STDC2150 PRODUCT BRIEF A COMPLETE CONTROLLER SOLUTION FOR INKJET PHOTO ALL-IN-ONES SIGMATEL, A LEADER IN MIXED-SIGNAL, MULTIMEDIA SEMICONDUCTORS, OFFERS COMPLETE SYSTEM ON CHIP SOC SOLUTIONS FOR THE MULTI-FUNCTION PRINTER (MFP) MARKET. SigmaTel MFP solutions offer the highest level of

UDN5703A

Abstract: UDN-5703A UDN5706A ON60
Contextual Info: 5703 5706 AND QUAD 2-INPUT PERIPHERAL/POWER DRIVERS —TRANSIENT-PROTECTED OUTPUTS These 16-lead quad 2-input peripheral/power drivers are bipolar monolithic integrated circuits containing AND or OR logic gates, highcurrent switching transistors, and transient-suppression diodes

MC 151 pnp

Abstract: 05Z5 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4698 2N4900
Contextual Info: General Transistor Corporation CASE TO-66 lc MAX = 1-5A VcEO(SUS) « 40-425V PNP Power Transistors NFN Typ* No. comptait«»! 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N4898 2N4699 2N4900 2N5344 2N3767 2N4910 2N4911 2N4912 VCE(SAT) 0IC/IB (V0A/A) VCEO <»»>

D7722

Contextual Info: FUJITSU MICROELECTRONICS 37417 b 2 O O D 7722 1 • 53E D T-%-z%os TSS80-A89Z December 1989 FufíTSU DATA SHEET ■ MB 82B 71-15/-20 64KBIT HIGH SPEED BI-CMOS SRAM 65,536-WORD x 1-BIT Bi-CMOS HIGH SPEED STATIC RANDOM ACCESS MEMORY Tlio Fujitsu M882B71 is a 65,536 words by 1 bits static random access memory fabricated with a

Contextual Info: FuflTSU July 1990 Edition 1.0 DATA SHEET MB82B84-15/-20 CMOS 256K-BIT HIGH-SPEED BiCMOS SRAM 64K Words x 4 Bits BiCMOS High-Speed Static Random Access Memory with Automatic Power Down The Fujitsu MB82B84 is a 65,536 w ords x 4 bits static random access memory

Contextual Info: November 1993 Editbn 2.0 FUJITSU DATA SHEET MB82009-20/-25 CMOS 1M-BIT HIGH SPEED SRAM 131,072-WORD x 9-BIT HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82009 is 131,072-word x 9-bit high speed static random access memory fabricated with CMOS technology.

B0136

Abstract: 2SA1220 BD139 2sc1162 BD167 transistor bd170 2SA1220A 2SA715 BD137 npn 2SB1086
Contextual Info: TO-126 Plastic Package Transistors PIN CO NFIGURATIO N 1. EM ITTER 2. CO LLEC T O R 3. B A SE DIM 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 F I 0 .7 5 4.5 TYP. L 15.7 TYP. M 1.27 TYP. N 3 .7 5 TYP. S -th. 2 .2 5 TYP. 0 .4 9 G P T - *r MAX. A E T MIN.

12ah3

Abstract: 12AH-3 TDH1
Contextual Info: April 1994 Edition 2.0 FUJITSU DATA SHEET MB82208-20/-25 CMOS 4M-BIT HIGH SPEED SRAM 524,288-WORD x 8-BIT HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82208 is 524,288-word x 8-bit high speed static random access memory fabricated with CMOS technology.

Contextual Info: Provisional Data Sheet No. PD 9.1285C International IOR Rectifier HEXFET PO W ER M O S FE T IRFY044CM N-CHANNEL Product Summary 60 Volt, 0.040Q HEXFET HEXFET technology is the key to International Rectifier's advanced line of power M O SFET transistors. The effi­

AS5263

Abstract: QFN32 QFN32 7x7 0.65 sin cos encoder schematic QFN32 7x7 0.65 case
Contextual Info: AS5263 14-BIT REDUNDANT PROGRAMMABLE MAGNETIC ROTARY ENCODER AS5263 14 BIT REDUNDANT AUTOMOTIVE ANGLE POSITION SENSOR General Description Benefits The AS5263 is a contactless magnetic angle position sensor for accurate angular measurement over a full turn

sot303

Contextual Info: Wfiït mitÍM HP AECWKLAERTDT Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • Amplifier Tested 900 MHz Performance: 1.3 dB NF,

1I604

Contextual Info: r n r FU J I T S U LTD T\ • S3E » - 37 HT? 5 b 0 0 D S 3 7 S OTÓ « F C A J - ^ - 2 3 ' IX. M a rc h 1991 Edition 2.0 FUJITSU DATA SHEET MB82B79-17/-20 72K-BIT HIGH SPEED BI-CMOS SRAM 8192-WORD x 9-BIT BI-CMOS HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82B79 is a 8,192 words by 9 bits static random access memory

Contextual Info: FUJITSU MICROELECTRONICS 47E D • 374T7b2 fi ■Fill May 1990 Edition 1.0 MB82B79-1S/-20 72K-BIT HIGH-SPEED BiCMOS SRAM 8K Words x 9 Bits High-Speed CMOS Static Random Access Memory The Fujitsu MB82B79 is a 8,192 words x 9 bits static random access memory fabricated

un5313

Abstract: 5311DW
Contextual Info: MOTOROLA Order this document by MUN5311DW1T1/D SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MUN5311DW1T1 S ER IES Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a

Contextual Info: 4TE MATRA D M H S • S û b f i 4Sb H liH illl I W 0001=137 T H 4f l 4 ■ t t P HMHS January 1991 HM 65688 HI-REL DATA SHEET_ 16 k x 4 ULTIMATE CMOS SRAM FEATURES TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPPLY ACCESS TIME : 35745/55 ns

431 diode

Abstract: diode b6 k 450 EMC1046 EMC1046-1-AIZL EMC1046-6-AIZL EMC1047 MSOP-10
Contextual Info: EMC1046/EMC1047 1°C Multiple Temperature Sensor with Beta Compensation and Hottest of Thermal Zones PRODUCT FEATURES Datasheet General Description Features The EMC1046/EMC1047 are high accuracy, low cost, System Management Bus SMBus temperature sensors. Advanced features such as Resistance Error