Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTORS 9012 Search Results

    TRANSISTORS 9012 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS 9012 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR SMD MARKING CODE spt

    Abstract: ta114 Marking Code For SMD Devices SMD PNP MARKING DE PDTA114
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA114T series PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open Product specification Supersedes data of 1999 Apr 13 2003 Apr 10 Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open


    Original     		PDF PDTA114T 01-May-99) TRANSISTOR SMD MARKING CODE spt ta114 Marking Code For SMD Devices SMD PNP MARKING DE PDTA114

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


    Original     		PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545

    9012LT1

    Abstract: No abstract text available
    Text: SHENZHEN ICHN ELECTRONICS TECH. CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 1. BASE 9012LT1 2. EMITTER TRANSISTOR（ PNP ） 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM : -0.5 A Collector-base voltage


    Original     		PDF OT-23 OT--23 9012LT1 -100A -100A -500mA -20mA 30MHz 9012LT1

    J174

    Abstract: j175 j177 Philips TO-92 MARKING CODE J176 j177 model J174 AMO J176 AMO 43 marking
    Text: Philips Semiconductors; J174; J175; J176; J177; P-channel silicon field-effect transistors Select your country Consumer Products Professional products Search Philips Semiconductors Home Product Information Information as of 2001-11-13 J174; J175; J176; J177; P-channel


    Original     		PDF rework/j174 J174 j175 j177 Philips TO-92 MARKING CODE J176 j177 model J174 AMO J176 AMO 43 marking

    HVR-1X 7 diode

    Abstract: STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159
    Text: Bulletin No O01EC0 JAN.,1998 SEMICONDUCTORS SHORT FORM CATALOG Power ICs Power Transistors PowerMOSFETs Tryristors Diodes Light Emitting Diodes CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility


    Original     		PDF O01EC0 TM1061S-L TM1061S-R TM1241S-L TM1241S-R TM1261S-L TM1261S-R TM1641P-L TM1641S-L TM1661P-L HVR-1X 7 diode STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159

    ATC 600F

    Abstract: NPTB00004 AD-016 100uf 16v murata tantalum GRM188R72A104KA35D 490-3285-2-ND ERJ2GE0R00X P033A 06031C103KAT2A Cer cap 100uf
    Text: AD-016 AD-016 Nitronex NPTB00004 GaN HEMT Power Transistors Application Board Tuned for 5.7 to 5.8GHz Application design AD-016 with a Nitronex NPTB00004 GaN HEMT device has approximately 27dBm average RF power under single carrier OFDM WiMax modulation1 and approximately 10dB gain with 23% drain efficiency at 2.5% EVM


    Original     		PDF AD-016 AD-016 NPTB00004 27dBm 150mA. 100ma AD-016: ATC 600F 100uf 16v murata tantalum GRM188R72A104KA35D 490-3285-2-ND ERJ2GE0R00X P033A 06031C103KAT2A Cer cap 100uf

    ATC 600F

    Abstract: NPTB00004 transistors ND C9 GRM188R72A104KA35D ERJ2GE0R00X 01UF 100UF 10UF AD-015 Nitron
    Text: AD-015 AD-015 Nitronex NPTB00004 GaN HEMT Power Transistors Application Board Tuned for 5.1 to 5.2GHz Application design AD-015 with a Nitronex NPTB00004 GaN HEMT device has approximately 29dBm average RF power under single carrier OFDM WiMax modulation1 and approximately 11dB gain with 23% drain efficiency at 2.5% EVM


    Original     		PDF AD-015 AD-015 NPTB00004 29dBm 150mA. 100ma AD-015: ATC 600F transistors ND C9 GRM188R72A104KA35D ERJ2GE0R00X 01UF 100UF 10UF Nitron

    ksd999

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC bGE D 7 ^ 4 1 4 2 0011525 fib3 • SMGK TRANSISTORS FUNCTION GUIDE TO-92 Type Transistors Continued Condition Device and Polarity NPN KSP66Û2 2N4401 KSP2222A 2N4400 2N3903 2N3904 KSP20 KSC1330 KSD471A PNP 2N4403 KSP2907 2N4402 2N3905


    OCR Scan     		PDF KSP66Ã 2N4401 KSP2222A 2N4400 2N3903 2N3904 KSP20 KSC1330 KSD471A KSD227 ksd999

    2N404

    Abstract: MPS404 2n404a a5t404
    Text: TYPES A5T404, A5T404A, A8T404, A8T404A P-N-P SILICON TRANSISTORS _B U L L E T I N N O . O L -S 7 3 1 1 9 7 9 , M A R C H 1973 SILECTt TRANSISTORS* FOR LOW-COST REPLACEMENT OF GERMANIUM 2N404, 2N404A • A5T404, A5T404A Have Standard TO-18 100-mil Pin-Circle Configuration


    OCR Scan     		PDF A5T404, A5T404A, A8T404, A8T404A 2N404, 2N404A A5T404A 100-mil 2N404 MPS404 2n404a a5t404

    1n813 fairchild

    Abstract: 2N3303 abb inverter manual acs 800 FD6666 diode 2N3137 UA703 equivalent FD200 diode 2N2369 AVALANCHE PULSE GENERATOR UA716 Fairchild dtl catalog
    Text: Fairchild Semiconductor Dab Cataloi 196! The Fairchild Semiconductor Data Cataloc — an all-inclusive volume of product infor mation covering diodes, transistors, digita and linear integrated circuits, MSI and LS devices from the world's largest suppliei


    OCR Scan     		PDF BR-BR-0034-58 1n813 fairchild 2N3303 abb inverter manual acs 800 FD6666 diode 2N3137 UA703 equivalent FD200 diode 2N2369 AVALANCHE PULSE GENERATOR UA716 Fairchild dtl catalog

    diac D30

    Abstract: db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551
    Text: Continental Device India Limited An IS/ISO 9002 & IECQ. certified manufacturer of quality discrete semiconductor components Surface Mount SOT-23 Semiconductors , , Transistors Z ener Diodes Switching and Schottky Diodes Quick Reference Data CONTINENTAL DEVICE INDIA LIMITED


    OCR Scan     		PDF OT-23 C-120, conventN1711 2N1893 2N2102 2N2218A 2N2219A 2N3019 2N3503 2N3700 diac D30 db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    9012 TO-92

    Abstract: transistor s 9012
    Text: DAVA 9012 TO-92 Plastic-Encapsulate Transistors FNP silicon TO-92 • ■ Ì È * tiÌ iÀ M £ < Ì T a = 2 5 ‘C m n a ìu ^ ÌS j£< I * VcBO -<10 V Vcso -20 V Vebo -5 V le -500 mA Pc 600 mW Ti 150 iC Tsli; - 55-150 TC 3.COLLECTOR ■ (T a= 2 5 'C )


    OCR Scan     		PDF

    2N5672

    Abstract: 2N5671 81TI
    Text: ¿2&M0SPEC HIGH POWER NPN SILICON POWER TRANSISTORS NPN High-Current, High-Speed, High-Power Type for Switching and Amplifier Applications. 2N5671 2N5672 FEATURES: * DC Current Gain hFE = 20 ~ 100 @ lc = 15 A ,VCE=2.0 V * Low VCE SAT < 0.75 V @ lc=15A, lB=1,2A


    OCR Scan     		PDF 2N5671 2N5672 2N5671, 81TI

    SDT5504

    Abstract: SDT5503 T 8922 SDT5505 PG5020 SDT5002 SDT5510 PG5002 T5511 SDT5003
    Text: t ' i r A P I i ELECTRONICS INC ^3 DE I ODMHSTS DOOOOai 0 " f « a 7^-33' ~ ù INTERCHANGEABILITY CHART SILICON POWER TRANSISTORS Competitive . Type No. Pirgo Replacement Type No. Competitive Type No. Pirgo Replacement Type No. H 1 Competitive Type No. Pirgo


    OCR Scan     		PDF SDT4451 SDT4452 SDT4453 SDT4454 SDT4455 SDT4456 SDT4483 SDT5001 SDT5002 SDT5003 SDT5504 SDT5503 T 8922 SDT5505 PG5020 SDT5510 PG5002 T5511

    2n511

    Abstract: 2N511A Texas Germanium 2N511B Germanium Transistor 2n511 transistor 9012 transistor power germanium transistor pnp Germanium power
    Text: TYPES 2N511, 2N511A, AND 2N511B P-N-P ALLOY-JUNCTION GERMANIUM HI6H-P0WER TRANSISTORS 40, 60 or 80 V01TS 10-A M P COLLECTOR CURRENT 150 -W ATT DISSIPATION lO W Ijo LOW VBE LOW THERMAL RESISTANCE for HIGH-POWER CONVERSION • HIGH-CURRENT SWITCHING AUDIO AMPLIFIER OUTPUT STAGES


    OCR Scan     		PDF 2N511, 2N511A, 2N511B V01TS 2N511A 2n511 Texas Germanium Germanium Transistor 2n511 transistor 9012 transistor power germanium transistor pnp Germanium power

    transistor s9012

    Abstract: s9012 B77X S9012 to-92 s9012 transistor
    Text: TO-92 Plastic-Encapsulate Transistors S 9012 TRANSISTO R PNP F E A T U RES □ qi □ fct-• :/ j K • ?vv-7 - : ’ Pow er d is s ip a tio n TO-92 0 .6 2 5 W (Tam b=25°C ) P cm ; BBS C o lle c to r c u rre n t 1 .E M IT T E R Icm : -0 .5 A 2 .BASE base vo lta g e


    OCR Scan     		PDF S9012 300uA -100uA -50UA -250UA -200UA 150uA transistor s9012 B77X S9012 to-92 s9012 transistor

    2sd 5023

    Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
    Text: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1


    OCR Scan     		PDF -26UNF-2A O-48D 2sd 5023 transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945

    2sd 5023

    Abstract: bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345
    Text: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE ic (A) VCEO IV) min max 40 35 40 40 40 120 VCE(SAT) max (A) (Vï COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1


    OCR Scan     		PDF 13LLSD to-39 2sd 5023 bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345

    2N3713

    Abstract: 2SC 9012 2N3714 2n3716 9012 transistor 2N371S k130k1
    Text: TYPES 2N3713, 2N3714, 2N3715, 2N3716 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND SWITCHING APPLICATIONS • 150 W at 25°C Case Temperature • 10 A Rated Collector Current • Min f hfe of 30 kHz <* Z2 2 * § m • Min f T of 4 MHz


    OCR Scan     		PDF 2N3713, 2N3714, 2N3715, 2N3716 2N3713 2SC 9012 2N3714 9012 transistor 2N371S k130k1

    2n3997

    Abstract: 2N3996 9012 transistor Transistor 9012 ax 2n3999
    Text: TYPES 2N3996, 2N3997, 2N3998, 2N3999 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTORS FOR HIGH-SPEED POWER SWITCHING APPLICATIONS 3D CO H m C < < — rr* 2 rn £ to m m j • 30 W at 100°C Case Temperature ° ¡ z C/3 CO m 7 it -•Io yn 18 m tri n ? O N


    OCR Scan     		PDF 2N3996, 2N3997, 2N3998, 2N3999 2N3997) T0-11I 2N3996 2N399lin 2n3997 9012 transistor Transistor 9012 ax

    2sc3227

    Abstract: 2SA1267 2Sc4370a BC548 ,BC558 BC337/BC327 bc557 2sc3202 2sa1270 2SC3199 KTC9014
    Text: 1 Transistors Maximum Ratings Electrical Characteristics Ta—25°C Type No Ic Pc (V) (mA) (mW) 50 150 150 ^CE Ic (V) (mA) (V) 70^700 6 2 0.25 MAX fT I« (TYP) M IN NF (TYP) MAX VCE •c (dB) (V) (mA) f (KHz) Rg (KQ) 1 10 6 0.1 1 10 SO T-23 H 6 0.1 1 10


    OCR Scan     		PDF 2SC387SS 2SA1S04S OT-23 2SC320I 2SA1269 O-92M 2SC3199 2SA1267 2SC3198A 2sc3227 2Sc4370a BC548 ,BC558 BC337/BC327 bc557 2sc3202 2sa1270 KTC9014

    2Sc4370a

    Abstract: 2SC3227 BC548 ,BC558 2sa1267 BC337/BC327 2sa1270 bc546 bc556 BC547 sot package sot-23 2SC3200 2SC3202
    Text: 1 Transistors Maximum Ratings Electrical Characteristics Ta—25°C Type No Ic Pc (V) (mA) (mW) 50 150 150 ^CE Ic (V) (mA) (V) 70^700 6 2 0.25 MAX fT I« (TYP) M IN NF (TYP) MAX VCE •c (dB) (V) (mA) f (KHz) Rg (KQ) 1 10 6 0.1 1 10 SO T-23 H 6 0.1 1 10


    OCR Scan     		PDF 2SC387SS 2SA1S04S OT-23 2SC320I 2SA1269 O-92M 2SC3199 2SA1267 2SC3198A 2Sc4370a 2SC3227 BC548 ,BC558 BC337/BC327 2sa1270 bc546 bc556 BC547 sot package sot-23 2SC3200 2SC3202

    2N3043

    Abstract: IN455 2N3047 2N930 TEXAS INSTRUMENTS 2N3046
    Text: TYPES 2N3043 THRU 2N3048 DUAL N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 7 4 2 0 8 , A U G U S T 1 9 6 3 - H E V t S E D A P R IL 1 96 7 DESIGNED FOR DIFFERENTIAL AMPLIFIERS AND HIGH-GAIN LOW-NOISE AUDIO AMPLIFIERS • Electrically Similar to 2N2639-2N2644 Series


    OCR Scan     		PDF 2N3043 2N3048 2N2639-2N2644 2N929, 2N930 IN455 2N3047 2N930 TEXAS INSTRUMENTS 2N3046