TRANSISTORS 130A Search Results

Contextual Info: SGR15N40L / SGU15N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These

SGR15N40L

Abstract: SGU15N40L transistor* igbt 70A 300 V
Contextual Info: SGR15N40L / SGU15N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These

IGBT cross-reference

Abstract: TO252-DPAK transistors cross reference list
Contextual Info: SGR15N40L / SGU15N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These

2n3773 power Amplifier circuit diagrams

Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
Contextual Info: RCA Power Devices This DATABOOK contains com­ plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete

Contextual Info: PD - 90577 IRFAF50 900V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAF50 BVDSS 900V RDS(on) ID 1.6Ω 6.2Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRFAF50

Contextual Info: PD - 90577 IRFAF50 900V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAF50 BVDSS 900V RDS(on) ID 1.6Ω 6.2Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

STP4119

Abstract: Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a
Contextual Info: ON Semiconductor Master Components Selector Guide Power Management, Amplifiers and Comparators, Analog Switches, Thyristors, Diodes, Rectifiers, Bipolar Transistors, FETs, Circuit Protection, Clock and Data Management, Interface, and Standard Logic Devices

2N6284 inverter schematic diagram

Abstract: NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F
Contextual Info: ON Semiconductor Master Components Selector Guide AC−DC Controllers and Regulators; Amplifiers and Comparators; Analog Switches; Bipolar Transistors; Clock and Data Distribution; Clock Generation; Custom; DC−DC Controllers, Converters, and Regulators; Digital

Contextual Info: IGBT FGS15N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with trench gate structure have superior performance in conductance and switching to planar gate structure and also have wide noise immunity. These devices are well suitable for

ic70a

Abstract: FGS15N40L
Contextual Info: IGBT FGS15N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with trench gate structure have superior performance in conductance and switching to planar gate structure and also have wide noise immunity. These devices are well suitable for

Contextual Info: IGBT FGS15N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with trench gate structure have superior performance in conductance and switching to planar gate structure and also have wide noise immunity. These devices are well suitable for

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

SGR15N40L

Abstract: SGU15N40L transistor* igbt 70A 300 V 70a 3
Contextual Info: IGBT SGR15N40L / SGU15N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for strobe

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

Contextual Info: PD-90330G IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF450 500V ID 0.400Ω 12A The HEXFET ®technology is the key to International

JANTX2N6770

Abstract: irf4501 mosfet IRF450 IRF450 JANTXV2N6770
Contextual Info: PD - 90330F IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF450 BVDSS 500V RDS(on) 0.400Ω ID 12A The HEXFETtechnology is the key to International

IRF*260

Abstract: IRFM260 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD - 91388B POWER MOSFET THRU-HOLE TO-254AA IRFM260 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM260 0.060 Ω 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

international rectifier

Abstract: IRFM260 4.5v to 100v input regulator
Contextual Info: PD - 91388C POWER MOSFET THRU-HOLE TO-254AA IRFM260 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM260 0.060 Ω 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PD - 91388C POWER MOSFET THRU-HOLE TO-254AA IRFM260 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM260 0.060 Ω 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

QJ50

Abstract: TRANSISTOR MOSFET K 1249 IRFI064 LS51 BYL3
Contextual Info: Data Sheet No. PD-9.876 I«R INTERNATIONAL RECTIFIER AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRFI064 N-CHANNEL Product Summary 60 Volt, 0.017 Ohm HEXFET The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRFMA450

Contextual Info: PD - 94362 IRFMA450 POWER MOSFET THRU-HOLE Tabless TO-254AA 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFMA450 0.415 Ω 12A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

1X04

Abstract: TRANSISTOR MOSFET K 1249 IRFI064
Contextual Info: Data Sheet No. PD-9.876 INTERNATIONAL RECTIFIER TOR AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRFIQ64 a] N-CHANNEL 60 Volt, 0.017 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier's advanced line of power M O SFET transistors.

Contextual Info: PD - 94362 IRFMA450 POWER MOSFET THRU-HOLE Tabless TO-254AA 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFMA450 0.415 Ω 12A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

transistor 1451 sd

Abstract: IRFV064
Contextual Info: Data Sheet No. PD-9.877 INTERNATIONAL RECTIFIER I$R AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRPV064 N-CHANNEL 60 Volt, 0.017 Ohm HEXFET Product Summary Part Number The HEXFET® technology is the key to International Rectifier’s advanced line of power M O SFE T transistors.