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Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: IGBT FGS15N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with trench gate structure have superior performance in conductance and switching to planar gate structure and also have wide noise immunity. These devices are well suitable for	Original	FGS15N40L FGS15N40LTF FGS15N40LTU	PDF

Catalog Datasheet

Type

Document Tags

PDF

Untitled

Abstract: No abstract text available
Text: IGBT FGS15N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with trench gate structure have superior performance in conductance and switching to planar gate structure and also have wide noise immunity. These devices are well suitable for

Original

FGS15N40L FGS15N40LTF FGS15N40LTU

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