TRANSISTOR WM 9 Search Results

TRANSISTOR WM 9 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR WM 9 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor SMD wm Contextual Info: BUD636A wm m t Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature • Planar passivation • Optimized RBSOA	OCR Scan	BUD636A BUD636A 20-Jan-99 transistor SMD wm	PDF
BUK102-50DL Abstract: T0220AB Contextual Info: PHILIPS INTERNATIONAL t.SE T> WM 711062b D0b3fll7 SHI • PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK102-50DL Logic level DESCRIPTION Monolithic temperature and overloadprotected logic level power	OCR Scan	711062b BUK102-50DL /llso25-C liSt/lISL25 BUK102-50DL T0220AB	PDF
cd 1191 cb Abstract: CD 1691 CB Contextual Info: wm m t BFP67/BFP67R/BFP67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain per	OCR Scan	BFP67/BFP67R/BFP67W BFP67 BFP67R BFP67W 20-Jan-99 cd 1191 cb CD 1691 CB	PDF
BUK555-200A Abstract: BUK555-200B M251 T0220AB Contextual Info: PHILIPS INTERNATIONAL bSE D WM 711005t. DObMSSl 101 « P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode	OCR Scan	711005t. BUK555-200A/B T0220AB BUK555 -200A -200B -ID/100 BUK555-200A BUK555-200B M251	PDF
Contextual Info: A N AMER PHILIPS/DISCRETE □bE D WM bb53T31 00150b! ? • MRB12350YR MAINTENANCE TYPE for new design use M RB11350Y X ' 33 - I S' PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates only in	OCR Scan	bb53T31 00150b! MRB12350YR RB11350Y)	PDF
Contextual Info: Wm/EREX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 KS8245A1 Single Darlington Transistor Module 15 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified KS524503 Sym bol Ratings Junction Temperature	OCR Scan	KS8245A1 Amperes/600 KS524503	PDF
BUK445-100A Abstract: 1E05 BUK445 BUK445-100B Contextual Info: PHILIPS INTERNATIONAL bSE D WM 7110flSb O O b a W Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	7110flSb BUK445-1OOA/B -SOT186 BUK445 -100A -100B BUK445-100A 1E05 BUK445-100B	PDF
BUK445-100A Abstract: BUK445-100B BT diode BUK445 Contextual Info: PHILIPS INT ERNATIONAL bSE D WM 7110flSb O O b a W Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched M ode Power Supplies	OCR Scan	BUK445-100A/B -SOT186 BUK445-100A BUK445-100B BT diode BUK445	PDF
Silicon Transistor Corp Abstract: 2950 transistor Contextual Info: SILICON TRANSISTOR CORP SbE J> WM Ô2S4022 DOGG^fi fll? « S T C SILICON TRANSISTOR CORPORATION I Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 500 V o lts 0.3 Ohms TECHNICAL DATA SHEET ABSOLUTE MAXIMUM RATINGS	OCR Scan	2S4022 SNF40503 BreM0-078 ST102 MIL-S-19500 Silicon Transistor Corp 2950 transistor	PDF
Contextual Info: Wm/EREX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 KD324515 Dual Darlington Transistor Module 150 Amperes/600 Volts A bsolute Maximum Ratings, Tj = 25 °C unless otherwise specified Sym bol KD324515 Units Junction Temperature	OCR Scan	KD324515 Amperes/600 Conti800	PDF
BLV99 Contextual Info: PHILIPS INTERNATIONAL b5E ]> WM 711005b 0Gb30ûb 771 M P H I N BLV99 Jl U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended fo r use as a driver-stage in base stations in the 90 0 M H z communications band. Features: • emitter-ballasting resistors fo r an optim um temperature profile	OCR Scan	711055b 0Gb30flb BLV99 OT172A1) OT172A1. 711DaSb BLV99	PDF
TRANSISTOR b77 Abstract: 4312.020 transistor tt 2222 BLV92 Contextual Info: PHILIPS INTERNATIONAL bSE J> WM 711DöSb DDb303S 50T BLV92 J U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use In mobile radio transmitters In the 9 0 0 M H z communications band. Features: • multi-base structure and emitter-ballasting resistors fo r an optim um temperature profile	OCR Scan	BLV92 OT-171) TRANSISTOR b77 4312.020 transistor tt 2222 BLV92	PDF
2N5004 Abstract: 2N5154 2N5328 OTC1550 OTC1900 Contextual Info: OPTEK TECHNOLOGY INC 4flE D WM fc,7TflSflO 0001303 Ô4T • OTK G>H OPTEK >— ' * - Product Bulletin OTC 1900 August 1990 NPN Power Switching Transistor Type OTC19QO t 35 " 80V, 10A Applications • • • • Inverters Switching Regulators	OCR Scan	OTC1900 OTC19QO OTC1550 500mA, 2N5154, 2N5004 2N5328. 2N5154 2N5328	PDF
Contextual Info: Philips Semiconductors WM bb 5 3 R 31 Q02RR6Q 536 M APX Product specification VHF power MOS transistor BLF246 N AUER PHILIPS/DISCRETE FEATURES bRE PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability	OCR Scan	Q02RR6Q BLF246 OT121 UCA939 CA940	PDF

2n2646 pin Abstract: 2N2646 pin configuration 2N2646 -pin configuration 2N2646 silicon unijunction transistor unijunction transistor transistor 2N2646 2N2646 CIRCUIT 2n2646 package 2N2646 PHILIPS Contextual Info: PHILIPS INTERNATIONAL WM 711D A2 b 0042b l0 b31 • P H I N 5bE D Philips Semiconductors T-2 2N2646 Data sheet status Preliminary specification date of issue Decem ber 1990 S'-O*? Silicon unijunction transistor QUICK REFERENCE DATA SYMBOL ~VeB2 PARAMETER CONDITIONS	OCR Scan	0042bl0 2N2646 -TO-18 MCB443 2N2646 711Dfl2b 0042L 2n2646 pin 2N2646 pin configuration 2N2646 -pin configuration silicon unijunction transistor unijunction transistor transistor 2N2646 2N2646 CIRCUIT 2n2646 package 2N2646 PHILIPS	PDF
C583 Contextual Info: SILICON NPN EPITAXIAL PLANAR TRANSISTOR a O « > » & « # # # «ffl O «JSKfi* High Frequency Wide Band Amplifier Applications o High Praquenoy Low Noise Amplifier Applications X m « Unit : run fT i 4Ä< , cob t./J ' 5 '.'A Æ wM 7 ä « INDUSTRIAL APPLICATIONS	OCR Scan	200MHz 39MAX C583	PDF
BFG541 Abstract: X3A-BFR540 BFR540 BFG540 Contextual Info: 0035517 P h iM p s jg m ic o n d u c to rg _ _ ^ ^ NPN 9 GHz wideband transistor crystal WM A P Y 7bT Product specification X3A-BFR540 N AUER PHILIPS/DISCRETE b'îE D DESCRIPTION MECHANICAL DATA NPN crystal used in BFR540 SOT23 , BFG540 (SOT143) and BFG541 (SOT223). Crystals are supplied	OCR Scan	X3A-BFR540 BFR540 BFG540 OT143) BFG541 OT223) X3A-BFR540 URV-3-5-52/733 BFG541 BFR540 BFG540	PDF
MRF9331 Abstract: MRF9331L BF432L BF432 MRF933 Contextual Info: MOTOROLA SC CXSTRS/R F ifbE H • b3b?25M 0015073 3 ■MOTb MOTOROLA ■ SEMICONDUCTOR wm TECHNICAL DATA MRF9331L BF432L* The RF Line N P N Silicon High-Frequency Transistor 'European Part Number . designed primarily for use in low power amplifiers to 1 GHz. Ideal for pagers and	OCR Scan	OT-143 MRF9331 MRF9331L BF432L BF432 MRF933	PDF
BF753 Contextual Info: Ph\|lips^emiconductor^_ WM 7 1 1 Qflg[3 O D bflbkiM GS2 PH I N Teliminar^pecifica^ NPN 5 GHz wideband transistor FEATURES BF753 PINNING • Low cost • Low noise figure 1 • 5 V tuner applications. 2 emitter 3 collector PIN DESCRIPTION base DESCRIPTION NPN silicon planar epitaxial	OCR Scan	7110agb BF753 cur20 BF753	PDF
Contextual Info: T O SH IB A TENTATIVE TLP270D TOSHIBA PHOTOCOUPLER t • GaAs IRED & PHOTO-MOS FET/PHOTO-TRANSISTOR i pi 7nn m wm r M OBILE/NOTE PCs PDAs MULTIMEDIA TVs MODEMS TLP270D has many multi-functions in DAA circuits for modems, which is a fully integrated design photocoupler in a 14pin SOP16	OCR Scan	TLP270D TLP270D 14pin 150mA 980910EBC1erature	PDF
Contextual Info: HEWLETT-PACKARD/ CHPNTS t.lE D WM 4447534 1 44 577 □DD‘Ö Surface Mount, Low Current Silicon Bipolar Transistor Technical Data AT-60111 AT-60211 Features • Low C u rrent O peration AT-60111: 0.4 mA at 3 V AT-60211: 0.8 mA at 3 V • Low Noise Figure	OCR Scan	AT-60111 AT-60211 AT-60111: AT-60211: OT-143	PDF
transistor k 2628 Abstract: AT-00511-TR at00511 Contextual Info: Wm H EW LETT mLfimPA CK A RD AT-00511 Surface Mount General Purpose Silicon Bipolar Transistor Features SOT-143 Plastic Package • 11 dB Typical P1dB at 2.0 GHz • 11.5 dB Typical G1dB at 2.0 GHz • 1.8 dB typical NF0 at 1.0 GHz • High Gain-Bandwidth Product: 7.0 GHz Typical fr	OCR Scan	AT-00511 OT-143 transistor k 2628 AT-00511-TR at00511	PDF
e5kk Contextual Info: 2DI3OZ-1OO 30a : O utline Draw ings POWER TRANSISTOR MODULE F e a tu re s • «¡W/± High Voltage • 7 U— ') > * f f • i ' t — Krt/Si Including Free Wheeling Diode • ASO A'"/a V-' Excellent Safe Operating Area • M i WM Insulated Type LAMPNo 10	OCR Scan	E82988 dl-1231 e5kk	PDF
2sb1423 Contextual Info: 2SB1423 h -7 > V ^ £ / T ransistors 2SB1423 • « l k ° * * y 7 ^ 7 , l / - t ^ P N P y ,J = i > h 7 > y * £ Epitaxial Planar PNP Silicon Transistor fö ü jÄ lilif f l/L o w Freq. Power Amp. 7. h P # 7 7 7 V n ffi/'S tro b o Flash. • WM\t"siEI/Dimensions Unit : mm	OCR Scan	2SB1423 100MHz 2sb1423	PDF

TRANSISTOR WM 9 Search Results

TRANSISTOR WM 9 Result Highlights (5)

TRANSISTOR WM 9 Datasheets Context Search

transistor SMD wm

BUK102-50DL

cd 1191 cb

BUK555-200A

BUK445-100A

BUK445-100A

Silicon Transistor Corp

BLV99

TRANSISTOR b77

2N5004

2n2646 pin

C583

BFG541

MRF9331

BF753

transistor k 2628

e5kk

2sb1423