TRANSISTOR TO-92 2N5551 Search Results

Contextual Info: SMALL SIGNAL HIGH VOLTAGE TRANSISTOR NPN 2N5551 Small Signal High Voltage Transistor (NPN) Features • High Voltage NPN Transistor for General Purpose and Telephony Applications Mechanical Data Case: TO-92, Plastic Package Terminals: Weight: TO-92 Solderable per MIL-STD-202G, Method 208

NPN SMALL SIGNAL TRANSISTOR

Abstract: transistor 2n5551 2N5551 transistor equivalent 2n5551 Transistor AH 10
Contextual Info: Small Signal High Voltage Transistor NPN 2N5551 Small Signal High Voltage Transistor (NPN) Features • High Voltage NPN Transistor for General Purpose and Telephony Applications Mechanical Data Case: TO-92, Plastic Package Terminals: Weight: TO-92 Solderable per MIL-STD-202G, Method 208

MARKING G3 Transistor

Abstract: Transistor TO-92 2N5551 2N5401 2N5551
Contextual Info: 2N5551 NPN SMALL SIGNAL TRANSISTOR Features High Collector to Emitter Voltage Epitaxial Planar Die Construction Compliments PNP Type 2N5401 General Purpose High-Voltage Amplifier Gas Discharge Display Amplifier KM TO-92 Mechanical Data_ Case: TO-92, Plastic

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5551 TO – 92 TRANSISTOR NPN 1. EMITTER FEATURES z General Purpose Switching Application 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5551 TO – 92 TRANSISTOR NPN 1. EMITTER FEATURES z General Purpose Switching Application 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5551K TO – 92 TRANSISTOR NPN 1. EMITTER FEATURES z General Purpose Switching Application 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR（ NPN ） TO-92 FEATURES •Switching and amplification in high voltage Applications such as telephony · 1. EMITTER Low current max. 600mA 2. BASE

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR NPN TO-92 FEATURES z Switching and amplification in high voltage z Applications such as telephony z Low current(max. 600mA) z High voltage(max.180V)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR NPN TO-92 FEATURES z Switching and amplification in high voltage z Applications such as telephony z Low current(max. 600mA) z High voltage(max.180V)

MJE2955

Abstract: 2N3645 bc557 BC307 BC212
Contextual Info: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu­ The facturer

Transistors 2n5551

Abstract: 2N5551
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) 1. EMITTER Collector current A ICM: 0.6 Collector-base voltage V(BR)CBO : 180 V Operating and storage junction temperature range

Transys Electronics

Abstract: transistor cb 180 2N5551
Contextual Info: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2N5551 TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) 1. EMITTER Collector current A ICM: 0.6 Collector-base voltage V(BR)CBO : 180 V Operating and storage junction temperature range

Contextual Info: FORWARD INTERNATIONAL BLBCTRON1CS LID . 2N5551 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR Package TO-92 * Collector-Emitter Voltage VCEO=160V * Collector Dissipation Pc MAX =625 mW ABSOLUTE MAXIMUM RATINGS at Tan*=25'c

Contextual Info: TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR（ NPN ） TO-92 FEATURES •Switching and amplification in high voltage Applications such as telephony · 1. EMITTER Low current max. 600mA 2. BASE · High voltage(max.180v) 3. COLLECTOR 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted

Contextual Info: SyriSEM i T O -92 Plastic Encapsulate Transistors 5YM5EM1 SEMICONDUCTOR 2N5551 TRANSISTOR NPN TO — 92 FEATURES Power dissipation PCM : 0 .6 2 5 W (Tamb=25 °C ) Collector current 1. EMITTER Icm : 0.6 A 2. BASE Collector base voltage V Operating and storage junction temperature range

2N5551G

Abstract: transistor 2n5551 2N5551-NPN 2N5551 2N5551 circuit VCEO160V 2N5551-X-AB3-R C2N5551
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ 1 FEATURES SOT-89 * High collector-emitter voltage: VCEO=160V * High current gain „ APPLICATIONS 1 TO-92 * Telephone switching circuit * Amplifier „ ORDERING INFORMATION

2N5551L

Abstract: 2N5551L-x-AB3-R 2N5551 circuit 2N5551 2N5551 transistor 2N5551-NPN Transistor TO-92 2N5551 2N5551 TO92 high voltage npn transistor SOT-89 2N5551 UTC
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 1 FEATURES SOT-89 * High collector-emitter voltage: VCEO=160V * High current gain APPLICATIONS 1 * Telephone switching circuit TO-92 * Amplifier *Pb-free plating product number: 2N5551L

Contextual Info: 2N5551 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V ck >=160V • Collector Dissipation: Pc max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcBO Collector-Base Voltage Collector-Emitter \foltage

Contextual Info: UTC 2N5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 1 APPLICATIONS *Telephone switching circuit *Amplifier TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified

transistor 1kt

Contextual Info: 2N5551 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR » Collector-Emitter Voltage: V c e o = 1 6 0 V • Collector Dissipation: Pc max =625mW TO -92 ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Characteristic Sym bol Collector-Base Voltage Collector-Em itter Voltage

Contextual Info: UTC 2N5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 1 APPLICATIONS *Telephone switching circuit *Amplifier TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C , unless otherwise specified

2N5551

Contextual Info: UTC 2N5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 1 APPLICATIONS *Telephone switching circuit *Amplifier TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified

bc 357 transistor pin details

Abstract: 2N5551
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR E 2N5551 TO- 92 CBE BC High Voltage NPN Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS Ta=25deg C unless otherwise specified

vqe 14 display

Abstract: vqe 14 e led display 2N5401 2N5551 vqb 200 d
Contextual Info: visHAY 2N5551 NPN SMALL SIGNAL TRANSISTOR y LITEMZI POWER SEMICONDUCTOR Features High Collector to Emitter Voltage Epitaxial Planar Die Construction Compliments PNP Type 2N5401 General Purpose High-Voltage Amplifier Gas Discharge Display Amplifier TO-92 Dim