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    TRANSISTOR TIP 122 Search Results

    TRANSISTOR TIP 122 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TIP 122 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tip122 transistor

    Abstract: TIP120 TIP 422 transistor TRANSISTOR tip122 darlington tip 122 TRANSISTOR tip122 features TIP127 transistor TIP 662 tip120 darlington TIP121
    Text: TIP120, 121, 122, 125, 126, 127 Darlington Transistors Features: • Designed for general-purpose amplifier and low speed switching applications. • Collector-Emitter sustaining voltage-VCEO sus = 60V (Minimum) - TIP120, TIP125 80V (Minimum) - TIP121, TIP126


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    PDF TIP120, TIP125 TIP121, TIP126 TIP122, TIP127. tip122 transistor TIP120 TIP 422 transistor TRANSISTOR tip122 darlington tip 122 TRANSISTOR tip122 features TIP127 transistor TIP 662 tip120 darlington TIP121

    transistor tip 35c

    Abstract: photo transistor terminal transistor TIP 350 TIP 122 transistor APPLICATION circuit transistor TIP 662 transistor TIP 320 PCB PHOTO SENSOR TIP 122 transistor TIP 29 transistor AHF21
    Text: AHF2 SMALL, HIGHLY RELIABLE TIP SENSOR CONTAINING A PHOTO SENSOR TIP AHF2 SWITCHES FEATURES TYPICAL APPLICATIONS • Realizes miniaturization of equipment and spaces saving. Size of body: 9.5x9.5×9.3 mm .374×.374×.366 inch • The contact type is equivalent to normally closed contacts, which satisfies the PL


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    TIP 40c transistor

    Abstract: transistor tip 35c transistor TIP 662 transistor TIP 350 TIP 122 transistor APPLICATION circuit photo transistor terminal transistor equivalent of tip 50 transistor tip 360 tip 145 transistor
    Text: AHF2 SMALL, HIGHLY RELIABLE TIP SENSOR CONTAINING A PHOTO SENSOR TIP AHF2 SWITCHES FEATURES TYPICAL APPLICATIONS • Realizes miniaturization of equipment and spaces saving. Size of body: 9.5x9.5×9.3 mm .374×.374×.366 inch • The contact type is equivalent to normally closed contacts, which satisfies the PL


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    DS41285A

    Abstract: tip 147 TRANSISTOR equivalent transistor 131 tip ZENER DIODE POWER RATING IRF7201 IRF7467 MCP2515 MCP2551 MCP3221 Tricks
    Text: 3V Tips ‘n Tricks M Tips ‘n Tricks Table of Contents Tips ‘N Tricks Introduction TIP #1: TIP #2: TIP #3: TIP #4: TIP #5: TIP #6: TIP #7: TIP #8: TIP #9: TIP #10: TIP #11: TIP #12: TIP #13: TIP #14: TIP #15: TIP #16: TIP #17: TIP #18: TIP #19: Powering 3.3V Systems From 5V


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    PDF DS41285A DS41285A* DS41285A tip 147 TRANSISTOR equivalent transistor 131 tip ZENER DIODE POWER RATING IRF7201 IRF7467 MCP2515 MCP2551 MCP3221 Tricks

    250v 3 terminal voltage regulator

    Abstract: t85 diode 125V T105 enec t105 T105 switch diode t85 115 2a 250v T105 Reliable Basic Switches hp 3101 pin T105
    Text: SnapActionSwitch_neu.book Seite 118 Montag, 20. Oktober 2008 4:03 16 AHF2 AHF2 TIP SWITCHES SMALL, HIGHLY RELIABLE TIP SENSOR CONTAINING A PHOTO SENSOR FEATURES TYPICAL APPLICATIONS • Realizes miniaturization of equipment and spaces saving. Size of body:


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    PTC211

    Abstract: TIP 122 transistor gyrator impedance modem telephone hybrid CYG2100 EN50082-1 HYGXC46 RC224ATF-S ETS-300-001 VOICE control elevator
    Text: APPLICATION NOTE AN-122 Cybergate 21XX Series AN-122 Clare’s Cybergate™ 21XX Series Data Access Arrangement DAA Module, the CYG2100 (UK, Australia, New Zealand, Finland, Sweden, Norway, Denmark, Holland, Portugal, Italy, Luxembourg, Austria, Belguim) /CYG2110


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    PDF AN-122 CYG2100 /CYG2110 /CYG2120 EN55022 EN50082-1 EN60950 AN-122-R1 PTC211 TIP 122 transistor gyrator impedance modem telephone hybrid CYG2100 EN50082-1 HYGXC46 RC224ATF-S ETS-300-001 VOICE control elevator

    C4547

    Abstract: broadcom 6358 BJT 2N2222 datasheet transistor smd za j1 npn smd 2n2222 smd npn bjt 2N2222 bjt 2n2222 J1 TRANSISTOR DIODE SOT-23 PACKAGE si3200 electrical drawing SI3200-KS
    Text: Si3232 DUAL PROGRAMMABLE CMOS SLIC WITH LINE MONITORING Features Ideal for customer premise applications Low standby power consumption: <65 mW per channel Internal balanced ringing to 65 Vrms Software programmable parameters: Ringing frequency, amplitude,


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    PDF Si3232 GR-909 Hz/16 C4547 broadcom 6358 BJT 2N2222 datasheet transistor smd za j1 npn smd 2n2222 smd npn bjt 2N2222 bjt 2n2222 J1 TRANSISTOR DIODE SOT-23 PACKAGE si3200 electrical drawing SI3200-KS

    SE 7889

    Abstract: Si3201-KS AN3272 SI3201-FS SI3216-FT Si3216 SI3211 Si321x sot23 mark code KS GR-909
    Text: Si3216 P RO SLIC P R O GRA MM A B LE W IDEBAND SLIC/C ODEC W I T H R INGING / B A TT E R Y V OLTA GE G ENERATION Features     Dual-mode wideband 50 Hz to 7 kHz / narrowband (200 Hz to 3.4 kHz) codec with 16-bit 16 kHz sampling for enhanced audio


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    PDF Si3216 16-bit SE 7889 Si3201-KS AN3272 SI3201-FS SI3216-FT Si3216 SI3211 Si321x sot23 mark code KS GR-909

    SI3216-FT

    Abstract: 5551 transistor Si3216
    Text: Si3216 P R O SLIC P R O G R A M M A B L E W I D E B A N D SLIC/C O D E C W I T H R I N G I N G / B A T T E R Y V O L TA G E G E N E R A T I O N Features „ „ „ „ Dual-mode wideband 50 Hz to 7 kHz / narrowband (200 Hz to 3.4 kHz) codec with 16-bit 16 kHz sampling for enhanced audio


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    PDF Si3216 16-bit SI3216-FT 5551 transistor Si3216

    C4547

    Abstract: BCM3351 ProSLIC BCM3352 Si3232 SOIC-16 TQFP-64 smd D11 SI3052 tqfp 64 thermal resistance
    Text: Si3232 PR ELIM IN AR Y DATA SH EET DUAL PROGRAMMABLE CMOS SLIC WITH LINE MONITORING Features Ideal for customer premise applications Low standby power consumption: <50 mW per channel Internal balanced ringing to 65 Vrms Software programmable parameters: Ringing frequency, amplitude, cadence,


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    PDF Si3232 Hz/16 C4547 BCM3351 ProSLIC BCM3352 Si3232 SOIC-16 TQFP-64 smd D11 SI3052 tqfp 64 thermal resistance

    Si3201-FS

    Abstract: Si3201-KS SE 7889 SI3216-FT ISOmodem si3201 SI3201-GS Si3216 BJT 2N2222 datasheet AN3272
    Text: Si3216 P R O SLIC P R O G R A M M A B L E W I D E B A N D SLIC/C O D E C W I T H R I N G I N G / B A T T E R Y V O L TA G E G E N E R A T I O N Features „ „ „ „ Dual-mode wideband 50 Hz to 7 kHz / narrowband (200 Hz to 3.4 kHz) codec with 16-bit 16 kHz sampling for enhanced audio


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    PDF Si3216 GR-909 Si3201-FS Si3201-KS SE 7889 SI3216-FT ISOmodem si3201 SI3201-GS Si3216 BJT 2N2222 datasheet AN3272

    N681622

    Abstract: W681388 TRANSISTOR Bf 310n N681387DG N681387 GKDF QFN-48 thermal resistance N681386 w684386 n681622yg
    Text: N681386/87 Single Programmable Extended Codec/SLCC 1. DESCRIPTION The N681386/87, implements a single channel FXS telephone line interface optimized for short loop applications. It integrates SLCC Subscriber Line Control Circuit functionality with a programmable CODEC and a DC/DC controller.


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    PDF N681386/87 N681386/87, 16-bit N681622 W681388 TRANSISTOR Bf 310n N681387DG N681387 GKDF QFN-48 thermal resistance N681386 w684386 n681622yg

    LB 122 transistor

    Abstract: LB 122 NPN TRANSISTOR
    Text: NPN EPITAXIAL DARLINGTON TRANSISTOR TIP120/121/122 MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem entary to TIP 1 25/126/127 ABSOLUTE MAXIMUM RATINGS C h a ra c te rist: TIP 1 20 C ollector-B ase V oltage : TIP 1 21 : TIP122 C ollector-E m ltter V o lta g ' TIP120


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    PDF TIP120/121/122 TIP122 TIP120 TIP121 LB 122 transistor LB 122 NPN TRANSISTOR

    LB 122 transistor

    Abstract: No abstract text available
    Text: TIP125/126/127 PNP EPITAXIAL DARLINGTON TRANSISTOR MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem ent to TIP 120/121/122 ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollecto r Base Voltage : TIP 1 25 Rating Unit -60 V : TIP126 -80 V : TIP127


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    PDF TIP125/126/127 TIP126 TIP127 TIP125 LB 122 transistor

    LB 122 transistor

    Abstract: TIP125 LB 127 transistor TIP127 TIP126 LB 122 NPN TRANSISTOR
    Text: TIP125/126/127 PNP EPITAXIAL DARLINGTON TRANSISTOR MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem ent to TIP 120/121/122 ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit -60 V : TIP126 -80 V : TIP127 C ollector E m itter Voltage -120


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    PDF TIP125/126/127 TIP120/121/122 TIP125 TIP126 TIP127 120Si LB 122 transistor LB 127 transistor TIP127 TIP126 LB 122 NPN TRANSISTOR

    TIP177

    Abstract: LB 122 transistor TIP 126 tip127
    Text: PNP EPITAXIAL DARLINGTON TRANSISTOR TIPI 25/126/127 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIPI 20/121/122 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage :TIP125 Rating : TIP 126 ' TIP177 Collector Emitter Voltage


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    PDF TIP125 TIP177 TIP126 TIP127 TI000 -100V, -12mA -20mA LB 122 transistor TIP 126

    LB 122 transistor

    Abstract: TRANSISTOR tip 126
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP I 25/126/127 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIP120/121/122 ABSOLUTE MAXIMUM RATINGS Characteristic C ollector-B ase Voltage: TIP125 : TIP126 : TIP127 C o lle cto r-E m itte r Voltage


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    PDF TIP120/121/122 TIP125 TIP126 TIP127 LB 122 transistor TRANSISTOR tip 126

    TIP 122 transistor

    Abstract: transistor tip 122 tip 120 tip 122 transistor darlington TIP-120 IP122 TIP 21 transistor
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR T IP I 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • C o m p le m e n t lo T IP I 25/126/127 ABSOLUTE MAXIMUM RATINGS i C haracteristic S ym bol C o lle c to r-B a s e V o lta g e : TIP120 R ating 60


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    PDF TIP120 TIP121 TIP120/121/122 TIP 122 transistor transistor tip 122 tip 120 tip 122 transistor darlington TIP-120 IP122 TIP 21 transistor

    TIP12B

    Abstract: tip127 texas tip 127 TIP127 tip 127 texas instruments 2n6128 TIP120 TIP121 TIP122 TIP125
    Text: TEXAS INSTR ÎOPTOÏ 8961726 TEXAS b5 INSTR D E | flTblYSb □ D3fc.cl[]D 4 <OPTO> 62C 36900 TIP125, TIP126, TIP127 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R E V IS E D O C TO B E R 1 9 8 4 Designed For Complementary use with TIP 120, TIP 121, TIP 122


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    PDF TIP125, TIP126, TIP127 TIP120, TIP121, TIP122 T0-22QAB T-33-31 TIP125 TIP126 TIP12B tip127 texas tip 127 tip 127 texas instruments 2n6128 TIP120 TIP121

    LB 122 transistor

    Abstract: LB 122 NPN TRANSISTOR LB 122 NPN LB 121 NPN TRANSISTOR LB 127 transistor tip122 tip120 TIP 122 transistor TIP 122 transistor tip 122
    Text: NPN EPITAXIAL DARLINGTON TRANSISTOR TIPI 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complementary to TIP125/126/127 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage : TIP120 Rating : TIP121 : TIP122 Collector-Emitter Voltag»


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    PDF TIP125/126/127 TIP120 TIP121 TIP122 TIP121 TIP120/121/122 120ft LB 122 transistor LB 122 NPN TRANSISTOR LB 122 NPN LB 121 NPN TRANSISTOR LB 127 transistor tip120 TIP 122 transistor TIP 122 transistor tip 122

    IP122

    Abstract: transistor darlington TIP-120 tip122c TIP120
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP120/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIP125/126/127 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Symbol C o lle c to r-B a s e V o lta g e : TIP120 : TIP121 : TIP122


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    PDF TIP120/121/122 TIP125/126/127 TIP120 TIP121 TIP122 IP122 transistor darlington TIP-120 tip122c TIP120

    PNP POWER TRANSISTOR T1P122

    Abstract: T1P122 TRANSISTOR tip122 TIP 122 transistor tip120 motorola TIP127 circuit TIP127
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA P lastic M edium -Pow er Com plem entary Silicon Transistors . . . designed for general-purpose amplifier and low-speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ lc = 4.0 Adc • Coiiector-Emitter Sustaining Voltage — @ 100 mAdc


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    PDF TIP120, TIP125 TIP121, TIP126 O-220AB TIP126 TIP127 TIP122 PNP POWER TRANSISTOR T1P122 T1P122 TRANSISTOR tip122 TIP 122 transistor tip120 motorola TIP127 circuit TIP127

    w34 transistor

    Abstract: No abstract text available
    Text: EO PLASTIC T-1% PAIR OPTOELECTRONICS QPD1223 PACKAGE DIMENSIONS 205 5.21 185 (4.70) REFERENCE SURFACE REFERENCE SURFACE COLLECTOR .100 (2.54) NOM .025 (.640) .015 (.380) SQ NOM 2P LC S .025 (.640) .015 (.380) SQ NOM ' 2P LC S INFRARED LED PHOTOTRANSISTOR


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    PDF QPD1223 ST2169 w34 transistor

    T1P121

    Abstract: T1P127 TIPI27 TIPI22 TIPI20 TIPI25 T1P126 tip122 motorola OF TRANSISTOR tip122 tip121.tip122
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors . . . designed for general-purpose amplifier and low-speed switching applications. • High DC Current Gain — hpE = 2500 Typ (§> le = 4.0 Adc • Coilector-Emitter Sustaining Voltage — @ 100 mAdc


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    PDF TIP120, TIP125 TIP121 TIP126 TIP122, TIP127 O-220AB TIP121* TIP122* TIP125* T1P121 T1P127 TIPI27 TIPI22 TIPI20 TIPI25 T1P126 tip122 motorola OF TRANSISTOR tip122 tip121.tip122