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    TRANSISTOR TC 100 Search Results

    TRANSISTOR TC 100 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TC 100 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: GA20SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack VDS RDS ON ID (Tc = 25°C) ID (Tc = 145°C) hFE (Tc = 25°C) Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch


    Original     		GA20SICP12-263 O-263-7L) Applicatio0SICP12 GA20SICP12 833E-48 073E-26 752E-12 01E-09 50E-03 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSD73 KSD73 Low Frequency High Power Amplifier • Collector-Base Voltage : VCBO = 100V • Collector Current : IC = 5A • Collector Dissipation : PC = 30W TC=25°C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		KSD73 O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSD73 KSD73 Low Frequency High Power Amplifier • Collector-Base Voltage : VCBO = 100V • Collector Current : IC = 5A • Collector Dissipation : PC = 30W TC=25°C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		KSD73 O-220 /new/html/KSD73 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA50JT06-258 Normally – OFF Silicon Carbide Junction Transistor Features •         VDS = 600 V RDS ON = 25 mΩ ID (Tc = 25°C) = 100 A hFE (Tc = 25°C) = 105 Package 225°C maximum operating temperature Gate Oxide Free SiC Switch


    Original     		GA50JT06-258 O-258 GA50JT06 00E-47 26E-26 3989E-9 026E-09 00E-3 PDF

    D2406 transistor

    Abstract: D2406 2SD2406
    Text: 2SD2406 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406 Power Amplifier Applications Unit: mm • High power dissipation: PC = 25 W Tc = 25°C • Good hFE linearity Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original     		2SD2406 D2406 transistor D2406 2SD2406 PDF

    D2406 transistor

    Abstract: 2SD2406 D2406
    Text: 2SD2406 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406 Power Amplifier Applications Unit: mm • High power dissipation: PC = 25 W Tc = 25°C • Good hFE linearity Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original     		2SD2406 D2406 transistor 2SD2406 D2406 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA50JT12-CAL Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID (Tc = 25°C) hFE (Tc = 25°C) = = = = 1200 V 25 mΩ 100 A 95 Features •        250°C maximum operating temperature Gate Oxide Free SiC switch Exceptional Safe Operating Area


    Original     		GA50JT12-CAL GA50JT12 00E-47 26E-28 398E-9 026E-09 00E-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol


    Original     		MMBT2131T1 MMBT2132T1/T3) AN569) PDF

    B1557

    Abstract: 2SB1557 2SD2386
    Text: 2SB1557 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1557 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2386 Maximum Ratings (Tc = 25°C) Characteristics Symbol


    Original     		2SB1557 2SD2386 2-16C1A B1557 2SB1557 2SD2386 PDF

    318F

    Abstract: AN569 MMBT2131T1
    Text: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value


    Original     		MMBT2131T1 MMBT2132T1/T3) MMBT2131T1/D 318F AN569 MMBT2131T1 PDF

    B1558

    Abstract: 2SB1558 2SD2387 2SB1558 TOSHIBA
    Text: 2SB1558 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1558 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2387 Maximum Ratings (Tc = 25°C) Characteristics Symbol


    Original     		2SB1558 2SD2387 2-16C1A B1558 2SB1558 2SD2387 2SB1558 TOSHIBA PDF

    KSD288Y

    Abstract: KSD288YTU
    Text: KSD288 KSD288 Power Regulator Low Frequency High Power Amplifier • Collector-Base Voltage : VCBO=80V • Collector Dissipation : PC=25W TC=25°C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		KSD288 O-220 KSD288 KSD288Y KSD288YTU PDF

    Untitled

    Abstract: No abstract text available
    Text: KSD1944 NPN EPITAXIAL SILICON TRANSISTOR HIGHβ β POWER TRANSISTOR TO-220F ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current TC=25°C Junction Temperature Storage Temperature


    Original     		KSD1944 O-220F PDF

    Untitled

    Abstract: No abstract text available
    Text: KSA1614 KSA1614 Low Frequency Power Amplifier Power Regulator • Collector-Base Voltage : VCBO = - 80V • Collector Dissipation : PC=20W TC=25°C TO-220F 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		KSA1614 O-220F KSA1614YTU PDF

    Untitled

    Abstract: No abstract text available
    Text: DTC314TK/DTC314TS/DTC314TF DTC314TL/DTC314TA/DTC314TV h 7 > y ^ ^ / T ransistors D TC 314TK /D TC 314TS /D TC 314TF D TC 314TL/D TC 314TA /D TC 314TV ^ a — t - -f > v £ JU h 7 > V S U a r t i E 7 ^-/Transistor Switch Digital Transistors (Includes Resistors


    OCR Scan     		DTC314TK/DTC314TS/DTC314TF DTC314TL/DTC314TA/DTC314TV 314TK 314TS 314TF 314TL/D 314TA 314TV -71-JfJ 50mA/ PDF

    Untitled

    Abstract: No abstract text available
    Text: DTC363EK/DTC363ES/DTC363EF DTC363EL/DTC363EA/DTC363EV I ' 7 > y X $ /Transistors D TC 363EK /D TC 363ES/D TC 363EF D TC 363EL/D TC 363EA /D TC 363EV 5 l- T < > ? « T - > 'W h 7 > - /X J g j S r t a h 7 > -> ' X 2 ^-/Transistor Switch Digital Transistors (Includes Resistors)


    OCR Scan     		DTC363EK/DTC363ES/DTC363EF DTC363EL/DTC363EA/DTC363EV 363EK 363ES/D 363EF 363EL/D 363EA 363EV 50mA/ 600mA) PDF

    Untitled

    Abstract: No abstract text available
    Text: DTC143XU/DTC143XK/DTC143XS/DTC143XF DTC143XL/DTC143XA/DTC143XV / T ransistors D TC 143X U /D TC 143X K /D TC 143X S D TC 143XF/D TC 143XL/D TC 143X A DTC143XV xi h =7 X 9 X " j -^/Transistor Switch Digital Transistors Includes Resistors • ^•JK '+S ^/'D irfen sion s (U n it: mm)


    OCR Scan     		DTC143XU/DTC143XK/DTC143XS/DTC143XF DTC143XL/DTC143XA/DTC143XV 143XF/D 143XL/D DTC143XV PDF

    Untitled

    Abstract: No abstract text available
    Text: DTC144TU/DTC144TK/DTC144TS/DTC144TF DTC144TL/DTC144TA/ DTC144TV /T ra n sisto rs D TC 144T U /D TC 144T K /D T C 144TS D TC 144T F/D TC 144TL/D TC 144TA DTC144T V 5s $h t-7 > 7- 9 mtnftM h > v * 9 7 ^/Transistor Switch Digital Transistors Includes Resistors)


    OCR Scan     		DTC144TU/DTC144TK/DTC144TS/DTC144TF DTC144TL/DTC144TA/ DTC144TV 144TS 144TL/D 144TA DTC144T DTC144TL/DTC144TA/DTC144TV PDF

    Untitled

    Abstract: No abstract text available
    Text: DTC123YU/DTC123YK/DTC123YS/DTC123YF DTC123YL/DTC123YA/DTC123YV N 7 > ' / 7 $ /T ran sisto rs D TC 123Y U /D TC 123Y K /D TC 123Y S D TC 123YF/D TC 123YL/D TC 123Y A DTC123YV 7 ^/Transistor Switch Digital Transistors Includes Resistors • £ W J 7 i£ E I/ D im e n s io n s (Unit : mm)


    OCR Scan     		DTC123YU/DTC123YK/DTC123YS/DTC123YF DTC123YL/DTC123YA/DTC123YV 123YF/D 123YL/D DTC123YV PDF

    DTC114WS

    Abstract: No abstract text available
    Text: DTC114WU/DTC114WK/DTC114WS/DTC114WF DTC114WL/DTC114WA/DTC114WV Is ~7 > v 7. $ / T ransistors DTC114W U /D TC 114W K /D TC 114WS D TC 114W F/D TC 114W L/D TC 114WA DTC114W V ^-/Transistor Switch Digital Transistors Includes Resistors • f7 • $\-MT f& H /D im e n s io n s (Unit : mm)


    OCR Scan     		DTC114WU/DTC114WK/DTC114WS/DTC114WF DTC114WL/DTC114WA/DTC114WV DTC114W 114WS 114WA DTC114WS PDF

    Untitled

    Abstract: No abstract text available
    Text: DTC363TK/DTC363TS/DTC363TF DTC363TL/DTC363T A / DTC363TV h 7 > y ^ ^ / T ransistors D TC 363TK /D TC 363TS /D TC 363TF DTC363T L/D TC 363T A /D T C 363T V S i M h 7 > y 'X ^ y ^/Transistor Switch Digital Transistors (Includes Resistors) • T triE I/D im e n s io n s ( U n it: mm)


    OCR Scan     		DTC363TK/DTC363TS/DTC363TF DTC363TL/DTC363T DTC363TV 363TK 363TS 363TF DTC363T DTC363TL/DTC363TA/DTC363TV PDF

    SI-8020

    Abstract: str7103 ic 8022 SI 122 D transistor 152 M SI-8021 STR7003 SI-8023 STR7101 SI-8020
    Text: SWITCHING-TYPE 2-PACK TYPE REGULATORS M axim um Ratings (TA=25°C) Type No. Power Transistor Collector Current Power Dissipation W ithstand Voltage (V) Ic (A) 60 (peak 7.5) 60 (peak 15) STR7001 Operating Temperature (Tc=25°C) (Tc) PD (W) Ta (“ C) 100


    OCR Scan     		STR7001 STR7002 STR7003 STR7101 STR7102 STR7103 SI-8020 SI-8021 SI-8022 SI-8023 ic 8022 SI 122 D transistor 152 M STR7101 SI-8020 PDF

    Untitled

    Abstract: No abstract text available
    Text: DTA144VU A / D TA144VKA / D TA144VSA Transistors D TC 144V U A / D TC 144V K A / D TC 144V SA Digital transistor built-in resistors DTA144VUA / DTA144VKA / DTA144VSA I •Features •A bsolu te maximum ratings (T a = 2 5 t:) 1 ) Built-in bias resistors enable the configuration of an inverter


    OCR Scan     		DTA144VU TA144VKA TA144VSA DTA144VUA DTA144VKA DTA144VSA 0Dlb713 O-220FN O-220FN O220FP PDF

    Untitled

    Abstract: No abstract text available
    Text: o re TIP31C NPNEXPITAXIAL PLANAR TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The U TC TIP31C is a NPN expitaxial planar transistor, designed fo r using in general purpose am plifier and switching applications. FEATURE ‘ C om plem ent to tip32C


    OCR Scan     		TIP31C TIP31C tip32C QW-R203-010 PDF