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GeneSic Semiconductor Inc GA50JT12-247 TRANS SJT 1200V 100A TO247AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GA50JT12-247	Tube			150	1 - 10 - 100 - 1000 $79.85 10000 $79.85	Buy Now
NAC	GA50JT12-247				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
GeneSic Semiconductor Inc GA50JT12-263 TRANSISTOR 1200V 100A TO263-7
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DigiKey	GA50JT12-263	Tube			150	1 - 10 - 100 - 1000 $79.85 10000 $79.85	Buy Now
Navitas Semiconductor GA50JT12-247
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Onlinecomponents.com	GA50JT12-247					1 - 10 - 100 $133.51 1000 $88.67 10000 $88.67	Buy Now
Navitas Semiconductor GA50JT12-247ISO
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Onlinecomponents.com	GA50JT12-247ISO					1 - 10 - 100 $121.37 1000 $81.44 10000 $81.44	Buy Now
GeneSic Semiconductor Inc GA50JT12-CAL
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NAC	GA50JT12-CAL				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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GA50JT12 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
GA50JT12-247		GeneSiC Semiconductor	FETs - Single, Discrete Semiconductor Products, TRANS SJT 1.2KV 50A		Original	PDF

GA50JT12 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: GA50JT12-CAL Section VII: SPICE Model Parameters This is a secure document. Please copy this code from the SPICE model PDF file on our website into LTSPICE (version 4) software for simulation of the GA50JT12-CAL.	Original	PDF	GA50JT12-CAL sic/sjt/GA50JT12-CAL GA50JT12-CAL. 25-AUG-2014 GA50JT12 00E-47 26E-28 398E-9 026E-09 00E-3
Untitled Abstract: No abstract text available Text: Electrical Datasheet* GA50JT12-CAL Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) = = = = 1200 V 1.4 V 50 A 28 m Features •       175 °C maximum operating temperature Temperature independent switching performance	Original	PDF	GA50JT12-CAL GA50JT12 00E-47 26E-28 75E-9 57E-9 00E-3 GA50JT12-CAL
Untitled Abstract: No abstract text available Text: GA50JT12-247 Section VII: SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA50JT12-247. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 2.2 $ * $Date: 29-JAN-2015 $ * * GeneSiC Semiconductor Inc.	Original	PDF	GA50JT12-247 GA50JT12-247. 29-JAN-2015 GA50JT12 833E-48 073E-26 398E-9 026E-09 00E-3
Untitled Abstract: No abstract text available Text: GA50JT12-CAL Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID (Tc = 25°C) hFE (Tc = 25°C) = = = = 1200 V 25 mΩ 100 A 95 Features •        250°C maximum operating temperature Gate Oxide Free SiC switch Exceptional Safe Operating Area	Original	PDF	GA50JT12-CAL GA50JT12 00E-47 26E-28 398E-9 026E-09 00E-3
Untitled Abstract: No abstract text available Text: GA50JT12-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity	Original	PDF	GA50JT12-247 O-247 GA50JT12 833E-48 073E-26 398E-9 026E-09 00E-3
hcpl-322j Abstract: hcpl 322j Text: GA50JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch	Original	PDF	GA50JT12-247 O-247AB GA50JT12 00E-47 26E-28 75E-9 57E-9 00E-3 hcpl-322j hcpl 322j
Untitled Abstract: No abstract text available Text: GA50JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch	Original	PDF	GA50JT12-247 O-247AB GA50JT12 00E-47 26E-28 75E-9 57E-9 00E-3
Untitled Abstract: No abstract text available Text: GA03IDDJT30-FR4 Isolated Gate Driver Gate Driver for SiC SJT with Output and Signal Isolation Features •       VISOLATION PDRIVE fmax = = = 3000 V 5W 350 kHz Product Image Requires single 12 V voltage supply Pin Out compatible with MOSFET driver boards	Original	PDF	GA03IDDJT30-FR4 GA03IDDJT30-FR4 FOD3182
Untitled Abstract: No abstract text available Text: GA50JT17-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity	Original	PDF	GA50JT17-247 O-247 GA50JT17 833E-48 073E-26 398E-9 026E-09 00E-3
Untitled Abstract: No abstract text available Text: Isolated Gate Driver Gate Driver for SiC SJT with Output and Signal Isolation GA15IDDJT22-FR4 VISO,min PDrive, cont PDrive,switch fMAX Features Package •      RoHS Compliant Requires single 12 V voltage supply Two-voltage level topology with low drive losses	Original	PDF	GA15IDDJT22-FR4 GA50JT12-247 GA50SICP12-227 GA100SICP12-227