MCT8 opto
Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35
Text: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR
|
OCR Scan
|
MCT210
MCT26
MCT66
C1255
10TT1.
MCT8 opto
c1252
MCL601
MCT8 opto switch
C1246
4N25
4N26
4N27
4N28
4N35
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA143EE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic
|
Original
|
DTA143EE
416/SC
|
PDF
|
6aa marking
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic
|
Original
|
DTA114YE
416/SC
6aa marking
|
PDF
|
transistor marking DG
Abstract: TRANSISTOR SMD MARKING CODE pa marking code DG SMD Transistor dg transistor smd NXP SMD TRANSISTOR MARKING CODE SMD transistor code 132 transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD CODE PACKAGE SOT363 marking code BV SMD Transistor
Text: PUML1/DG 50 V, 200 mA NPN general-purpose transistor/ 100 mA NPN resistor-equipped transistor Rev. 01 — 14 July 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistor and NPN Resistor-Equipped Transistor RET in one
|
Original
|
OT363
SC-88)
AEC-Q101
transistor marking DG
TRANSISTOR SMD MARKING CODE pa
marking code DG SMD Transistor
dg transistor smd
NXP SMD TRANSISTOR MARKING CODE
SMD transistor code 132
transistor smd code marking 101
transistor smd code marking 102
TRANSISTOR SMD CODE PACKAGE SOT363
marking code BV SMD Transistor
|
PDF
|
iei-1209
Abstract: uPA1438 transistor CD 910 IC351 IC-3517 IEI-1213 MEI-1202 MF-1134
Text: DATA SHEET SILICON TRANSISTOR ARRAY uPA1438 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The ¿¿PA1438 is NPN silicon epitaxial D arlington (in millimeters) Power Transistor A rray that built in Surge Absorber and
|
OCR Scan
|
PA1438
uPA1438
tPA1438H
IEI-1209)
iei-1209
transistor CD 910
IC351
IC-3517
IEI-1213
MEI-1202
MF-1134
|
PDF
|
MJE2955
Abstract: 2N3645 bc557 BC307 BC212
Text: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu The facturer
|
OCR Scan
|
O-92SP
O-237
O-220
O-928>
iO051
MJE2955
2N3645
bc557
BC307
BC212
|
PDF
|
transistor sc59 marking
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114TE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a
|
Original
|
DTC114TE
DTC114TE
416/SC
transistor sc59 marking
|
PDF
|
6aa marking
Abstract: 327 SOT-6
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114YE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a
|
Original
|
DTC114YE
DTC114YE
416/SC
6aa marking
327 SOT-6
|
PDF
|
la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
|
OCR Scan
|
AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
|
PDF
|
1N4001 transistor free
Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P silicon diode 1N4001 specifications transistor BC337 transistor darlington npn
Text: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.
|
Original
|
BU323AP
BU323AP
r14525
BU323AP/D
1N4001 transistor free
BC337 figure
1N4001
BC337
BU323P
silicon diode 1N4001 specifications
transistor BC337
transistor darlington npn
|
PDF
|
MP-25
Abstract: NP40N06CLC NP40N06DLC NP40N06ELC TO-220SMD
Text: Preliminary Product Information MOS Field Effect Transistor NP40N06CLC,NP40N06DLC,NP40N06ELC N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION This product is N-channel MOS Field Effect Transistor designed for high voltage switching application.
|
OCR Scan
|
NP40N06CLC
NP40N06DLC
NP40N06ELC
175dgree
027QMAX.
1000pF
O-220AB
O-262AA
O-220SMD
MP-25
NP40N06ELC
TO-220SMD
|
PDF
|
BC337 rbe
Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P diode 1N4001 voltage limitations
Text: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.
|
Original
|
BU323AP
BU323AP
r14525
BU323AP/D
BC337 rbe
BC337 figure
1N4001
BC337
BU323P
diode 1N4001 voltage limitations
|
PDF
|
TO-220FN
Abstract: No abstract text available
Text: Magazine T0220FN code Magazine PVC material Polyvinyl chloride Package name Renesas code TO-220FN PRSS0003AB-A Previous code T220FN Maximum storage No. Maximum storage No. Maximum storage No. Packing form Transistor/Magazine Magazine/Inner box Transistor/Inner box
|
Original
|
T0220FN
O-220FN
PRSS0003AB-A
T220FN
TO-220FN
|
PDF
|
transistor equivalent table
Abstract: PBLS4002D
Text: PBLS4002D 40 V PNP BISS loadswitch Rev. 01 — 1 December 2004 Objective data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in a SOT457 SC-74 package. 1.2 Features • ■ ■ ■ ■ Low VCEsat (BISS) transistor and resistor-equipped transistor in one package
|
Original
|
PBLS4002D
OT457
SC-74)
transistor equivalent table
PBLS4002D
|
PDF
|
|
|
PBLS4004D
Abstract: No abstract text available
Text: PBLS4004D 40 V PNP BISS loadswitch Rev. 01 — 9 November 2004 Objective data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in a SOT457 SC-74 package. 1.2 Features • ■ ■ ■ ■ Low VCEsat (BISS) transistor and resistor-equipped transistor in one package
|
Original
|
PBLS4004D
OT457
SC-74)
PBLS4004D
|
PDF
|
200V transistor npn 2a
Abstract: T2096 T2096L-TM3-T T2096-TM3-T TO-251 Package QW-R21
Text: UNISONIC TECHNOLOGIES CO., LTD T2096 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The T2096 is a NPN Silicon Planar Transistors in TO-251 package. It is intended for high voltage, switching power supply and industrial applications. FEATURES
|
Original
|
T2096
T2096
O-251
T2096L
T2096-TM3-T
T2096L-TM3-T
QW-R213-017
200V transistor npn 2a
T2096L-TM3-T
T2096-TM3-T
TO-251 Package
QW-R21
|
PDF
|
PBLS4001D
Abstract: 13905
Text: PBLS4001D 40 V PNP BISS loadswitch Rev. 01 — 30 November 2004 Objective data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in a SOT457 SC-74 package. 1.2 Features • ■ ■ ■ ■ Low VCEsat (BISS) transistor and resistor-equipped transistor in one package
|
Original
|
PBLS4001D
OT457
SC-74)
PBLS4001D
13905
|
PDF
|
369D
Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105
Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic
|
Original
|
BUD42D
BUD42D
BUD42D/D
369D
BUD42DT4
MPF930
MTP8P10
MUR105
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic
|
Original
|
BUD42D
D42DG
BUD42D/D
|
PDF
|
369D
Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG
Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic
|
Original
|
BUD42D
BUD42D
BUD42D/D
369D
BUD42DT4
MPF930
MTP8P10
MUR105
l4 marking code diode
D42DG
|
PDF
|
BUK455-400B
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL bSE J> 711002b T2b H P H I N Product Specification Philips Semiconductors BUK455-400B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in
|
OCR Scan
|
711Gfi2b
BUK455-400B
-T0220AB
|
PDF
|
E2p 28 transistor
Abstract: 55C40 BFS17 BFS17A E2p device marking E2p transistor
Text: Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic S O T23 package. APPLICATIONS • It is intended fo r RF applications such as oscillators in TV tuners. PINNING T op view PIN DESCRIPTION
|
OCR Scan
|
BFS17
E2p 28 transistor
55C40
BFS17A
E2p device marking
E2p transistor
|
PDF
|
D42DG
Abstract: BUD43D transistor 369D BUD42D BUD42DT4 MPF930 MTP8P10 MUR105
Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic
|
Original
|
BUD42D
BUD42D
BUD42D/D
D42DG
BUD43D transistor
369D
BUD42DT4
MPF930
MTP8P10
MUR105
|
PDF
|
2SD2696
Abstract: EMX28
Text: EMX28 Transistors Low frequency transistor, complex 2-elements Bipolar Transistor EMX28 zStructure NPN Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm) EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SD2696 dies are incorpolated in the EMT6 package.
|
Original
|
EMX28
2SD2696
300mA
100mA
EMX28
|
PDF
|
