TRANSISTOR T2 Search Results

369D

Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG
Contextual Info: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic

Contextual Info: SO T2 23 PBSS5360Z 60 V, 3 A PNP low VCEsat BISS transistor 19 February 2014 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

MJD122

Abstract: TIP125-TIP127 mjd122g
Contextual Info: MJD122, NJVMJD122T4G NPN , MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features http://onsemi.com SILICON POWER TRANSISTOR 8 AMPERES

T2907A

Abstract: cd 100 transistor
Contextual Info: Central C X T2907A TM Sem i c o n d u c t o r C o r p . PNP SILICON TRANSISTOR DESCRIPTION: The C ENTRAL S EM IC O N D U C TO R CXT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

vce 1200 and 5 amps npn transistor to 220 pack

Abstract: 221D MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105
Contextual Info: MOTOROLA Order this document by MJE18004/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MJE18004 * MJF18004 * Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES

FDD603AL

Contextual Info: FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This

BUK543

Abstract: BUK543-60A BUK543-60B TTA10
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711DflSb ODbMlflb 54T ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic Kill-pack

SILICON DIFFUSED POWER TRANSISTOR

Abstract: T200I specification of curve tracer bu705 philips semiconductor BU705 700 v power transistor
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistor BU705 High-voltage, high-speed switching, glass passivated npn power transistor in a SO T93A envelope, intended fo r use in horizontal deflection circuits o f television receivers.

MJD18002D2

Abstract: MJD18002D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310 MJD18002D2-1
Contextual Info: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector–Emitter Diode and Built–In Efficient Antisaturation Network http://onsemi.com The MJD18002D2 is a state–of–the–art high speed, high gain

transistor motorola 236

Abstract: MGY25N120
Contextual Info: MOTOROLA Order this document by MGY25N120/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced

BUK443

Abstract: BUK443-60A BUK443-60B TRANSISTOR C 557 B
Contextual Info: PHILIPS INTERNATIONAL bSE ]> 711002b OObB^l Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

NP160N055TUK

Contextual Info: Preliminary Data Sheet NP160N055TUK R07DS0592EJ0100 Rev.1.00 Dec 12, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance

MJE1123

Abstract: LT1123
Contextual Info: MOTOROLA Order this document by MJE1123/D SEMICONDUCTOR TECHNICAL DATA MJE1123 Bipolar Power PNP Low Dropout Regulator Transistor PNP LOW DROPOUT TRANSISTOR 4.0 AMPERES 40 VOLTS The MJE1123 is an applications specific device designed to provide low–dropout

J37 transistor

Abstract: transistor j8 transistor j37 J370 capacitor J37 PH3134-9L transistor j145
Contextual Info: = - an AMP company Radar Pulsed Power Transistor, SW, 300~s Pulse, 10% Duty Pti3134-9L 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry Diffused Emitter Ballasting Resistors

T2907A

Abstract: marking AI sot23 JJ SOT23
Contextual Info: TM C e n t r a l Sem i c o n d u c t o r C o r p . C M P T2907A PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMPT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

TRANSISTOR BC 208

Abstract: transistor BC 568 AC/DC tig smps tig welding tig welding 100-P BUK442 BUK442-100A BUK442-100B
Contextual Info: PHILIPS INTERNATIONAL b5E D • 711DflEb aDb3T4b 223 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

PBLS4003V

Abstract: PBLS4003Y
Contextual Info: PBLS4003Y; PBLS4003V 40 V PNP BISS loadswitch Rev. 03 — 13 February 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in one package.

13MM

Abstract: PH1214-4M
Contextual Info: =7 an AMP comDanv = E Radar Pulsed Power Transistor, 4W, loops Pulse, 10% Duty PH1214-4M 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors

sot-223 body marking D K Q F

Contextual Info: MOTOROLA Order this document by PZTA92T1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor P N P PZTA92T1 S iliC O n COLLECTOR2,4 Motorola Preferred Device SOT-223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol

Contextual Info: 7 ^ 3 9 - 0 ? Philips Components D ata sheet status Preliminary specification d ate of issue March 1991 PHILIPS PowerMOS transistor SbE international GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.

PBLS4005V

Abstract: PBLS4005Y
Contextual Info: PBLS4005Y; PBLS4005V 40 V PNP BISS loadswitch Rev. 03 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in one package.

BUK427-600B

Abstract: 18-SO BUK427-600 d0411
Contextual Info: 7 ^ 3 9 - / / Philips C om ponents Data sheet status Product specification date of issue March 1991 PHILIPS BUK427-600B PowerMOS transistor INTERNATION GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope.

40841

Abstract: 2158D how to control firing angle in thyristor 3096A CA3096 558 npn CA3096AE CA3096E CA3096E equivalent CA3096A
Contextual Info: CA3096, CA3096A, CA3096C NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors two PNP and three NPN types

PN2907A

Abstract: 224 pn2907a PN2222A to-92 PN2222A PN2907A-AP
Contextual Info: PN2907A SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Ordering Code Marking PN2907A PN2907A TO-92 / Bulk PN2907A-AP PN2907A TO-92 • ■ ■ Package / Shipment / Ammopack SILICON EPITAXIAL PLANAR PNP TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY