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    TRANSISTOR T 523 Search Results

    TRANSISTOR T 523 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR T 523 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor marking 5c1

    Abstract: transistor CODE 5C1 CMUT5551E
    Text: CMUT5551E ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT5551E is an NPN Silicon Transistor, packaged in an SOT-523 case, designed for general purpose amplifier applications


    Original     		PDF CMUT5551E OT-523 100mV CMUT5401E 150mA 100MHz transistor marking 5c1 transistor CODE 5C1

    Untitled

    Abstract: No abstract text available
    Text: CMUT5401E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT5401E is a PNP Silicon Transistor, packaged in an SOT-523 case, designed for general purpose amplifier applications


    Original     		PDF CMUT5401E CMUT5401E OT-523 150mV CMUT5551E 150mA 100MHz

    transistor T 523

    Abstract: No abstract text available
    Text: CMUT5401E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT5401E is a PNP Silicon Transistor, packaged in an SOT-523 case, designed for general purpose amplifier applications


    Original     		PDF CMUT5401E OT-523 150mV CMUT5551E 150mA 100MHz transistor T 523

    transistor marking 5c1

    Abstract: No abstract text available
    Text: CMUT5551E ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT5551E is an NPN Silicon Transistor, packaged in an SOT-523 case, designed for general purpose amplifier applications


    Original     		PDF CMUT5551E CMUT5551E OT-523 100mV CMUT5401E 150mA 100MHz transistor marking 5c1

    MMBT2222

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC MMBT2222 14E D 7^ 4145 Q0075S3 T | NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS (T,=25°C Characteristic CoBector-Base Voltage Codector-Emltter Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		PDF 1b414E 0007253M MMBT2222 lo-10mA,

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    Untitled

    Abstract: No abstract text available
    Text: t Philips Components Data sheet status Preliminary specification date of issue March 1991 - 3 9 - J o BUK471-100A/B PowerMOS transistor Replaces BUK441-100A/B SbE » PHILIPS I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		PDF BUK471-100A/B 711062b BUK441-100A/B BUK471 -100A -100B T-39-09 7110f

    Untitled

    Abstract: No abstract text available
    Text: SAMSU NG S E M I C O ND U C T O R INC MMBT2222 14E D | T'Ibm ME 00072S3 1 | NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS T,=25°C C haracteristic CoBector-Base Voltage Codec tor-Emltter Voltage Emitter-Base Voltage


    OCR Scan     		PDF MMBT2222 00072S3

    FA1A4M

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR FA 1A 4M M EDIUM SPEED SW ITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • Resistors B u ilt-in TYPE in m illim e te rs R O—V W t = 1 0 k i7 R2 = l 0 k t t • C o m plem entary to FN 1A 4M A B S O LU T E M A X IM U M R A T IN G S


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    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    BUK556-60H

    Abstract: T0220AB
    Text: bSE D PHI LI P S I N T E R N A T I O N A L B 711002b DQbMEbl 050 « P H I N Prelim inary Specification Philips Semiconductors BUK556-60H PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.


    OCR Scan     		PDF BUK556-60H T0220AB

    BUZ311

    Abstract: P70D
    Text: N AMER PHILIPS/DISCRETE DbE D m PowerMOS transistor □bS3T31 OGlMaBb E • BUZ311 T* ~ 3 I I^ May 1987 GENERAL DESCRIPTION N-channel enchancement mode fleld-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ311 T0218AA; P70D

    AN406/0591

    Abstract: TEA2019 TEA2018A
    Text: SGS-THOMSON J T E A 2019 CURRENT MODE SWITCHING POWER SUPPLY CONTROL CIRCUIT • DIRECT DRIVE OF THE EXTERNAL SWITCH­ ING TRANSISTOR ' ■ POSITIVE AND NEGATIVE OUTPUT CUR­ RENTS UP TO 0.5A ■ CURRENT LIMITATION ■ TRANSFORMER DEMAGNETIZATION AND POWER TRANSISTOR SATURATION SENS­


    OCR Scan     		PDF TEA2019 TEA2019fa-cilitates TEA2019 47CpF 15kHz 155VRMS 250Vrms AN406/0591 TEA2018A

    BLY94

    Abstract: vhf power transistor 50W philips Trimmer 60 pf transistor TT 2222 BLY94 application notes BLY94 a class D 50w 50w rf power transistor sot55 SOT-55
    Text: b'ìE » N AMER PHILIPS/DISCRETE • bbS3131 ÜÜSTTSfl 22T IAPX B LY94 V .H .F . P O W E R T R A N S IS T O R N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 28 V . The transistor is resistance stabilized. Every tran­


    OCR Scan     		PDF bbS3131 BLY94 OT-55. Tmb-25 BLY94 vhf power transistor 50W philips Trimmer 60 pf transistor TT 2222 BLY94 application notes BLY94 a class D 50w 50w rf power transistor sot55 SOT-55

    TC236

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES Excellent Low NF in Low Frequency Band 2 .1± 0.1 Low Voltage Use 1.25±0.1 Low Cob : 0 .9 pF T Y P . Low Noise Voltage : 90 mV TYP.


    OCR Scan     		PDF 2SC4885 SC-70 CO193 TC236

    BF 182 transistor

    Abstract: TRANSISTOR Bf 522 BF182 bf 182 CI 182 Y11E transistor A11A
    Text: B F 182 NPN S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR NPN SILIC IU M , PLA N A R E P IT A X IA L The NPN planar epitaxial transistor BF 182 is intended for use in V H F converter stages of television receivers and generally for'all U H FV H F uses.


    OCR Scan     		PDF BF182 -c12e lY12e| BF 182 transistor TRANSISTOR Bf 522 BF182 bf 182 CI 182 Y11E transistor A11A

    BUK556-60H

    Abstract: T0220AB
    Text: N AMER P H I L I P S / D I S C R E T E b'îE » t.bS3T31 OOBDflSS 447 M A P X Preliminary Specification Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.


    OCR Scan     		PDF bbS3R31 BUK556-60H T0220AB

    TRANSISTOR J 5804 NPN

    Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
    Text: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.


    OCR Scan     		PDF 2SC4885 SC-70 TRANSISTOR J 5804 NPN nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5233 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC 5233 GENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION Low Saturation Voltage Large Collector Current VCE (sat) (D = 15mV (Typ.) @ I q = 10mA / Iß = 0.5mA


    OCR Scan     		PDF 2SC5233 500mA 1001EA

    BFR94

    Abstract: Ferroxcube cross reference BFQ34 Ferroxcube core BFR94A f2nd transistor 3305
    Text: N AMER PHILIPS/DISCRETE 2SE D BFQ34 is recommended for new design • bbS3T31 DOlflOTS h U 11 BFR94 T -3 3 -0 S " N-P-N H.F. WIDEBAND TRANSISTOR N-P-N resistance-stabilized transistor in a SOT-48 capstan envelope featuring extremely low cross modulation, intermodulation and second harmonic distortion. Thanks to its high transition frequency


    OCR Scan     		PDF bbS3T31 BFQ34 BFR94 T-33-Ã OT-48 VCE-20V BFR94 Ferroxcube cross reference Ferroxcube core BFR94A f2nd transistor 3305

    Untitled

    Abstract: No abstract text available
    Text: Transistors General Purpose Transistor Isolated Dual Transistors IMX17 •F e a tu re s •E x te rn a l dimensions (Units: mm) 1) Two 2 S D 1 4 8 4 K chips in an SM T package. 2) Mounting possible with SM T3 au­ tomatic mounting machine. 3) Transistor elements are indepen­


    OCR Scan     		PDF IMX17 2SD1484K 500mA