Untitled
Abstract: No abstract text available
Text: TOSHIBA HN2C11FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 1 FU VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS U n it in mm 2.1 + 0.1 • Including Two Devices in U S6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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HN2C11FU
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Untitled
Abstract: No abstract text available
Text: 2SA1954 TO SHIBA 2 S A 1 954 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS G ENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION • Low Saturation Voltage • Large Collector Current VCE (sat) d )= —15mV (Typ.) @ Iq = —10mA/ Iß = —0.5mA
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2SA1954
--15mV
--10mA/
500mA
1001EA
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SG3000GXH29
Abstract: No abstract text available
Text: TOSHIBA SG3000GXH23G TOSHIBA GATE TURN-OFF THYRISTOR TENTATIVE SG3000GXH23G Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d R M = 4500V R.M.S On-State Current iT RMS = 1200A IT G Q M = 3000A Peak Turn-Off Current Critical Rate of Rise of On-State Current : d i/d t = 400A/ /us
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SG3000GXH23G
000V//
--25A,
SG3000GXH29.
SG3000GXH29
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Untitled
Abstract: No abstract text available
Text: T O S H IB A GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 4 0 T 1 01 HIGH POWER SWITCHING APPLICATIONS. • • • Unit in mm Enhancement-Mode High Speed : tf=0.4/^s Max. (Iq = 40A) Low Saturation : V qe (sat) = 5.0V (Max.) (Iq = 40A)
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GT40T101
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K2 0 1 3 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION Unit in mm 3.2 ± 0 .2 10 ± 0 .3 • High Breakdown Voltage : V j g g = 180V • High Forward Transfer Admittance : |Yfs | = 0 .7 S Typ.)
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2SK2013
2SJ313
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SJ378 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SV 2SJ 378 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 5.0 ± 0 .2 4V Gate Drive
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2SJ378
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC2642 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 7 ^ f ? fi J 7 UHF BAND POWER AMPLIFIER APPLICATIONS • U nit in mm O utput Power : Po = 12W Min. (f= 470MHz, V c c = 12.6V, Pi = 3W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL
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2SC2642
470MHz,
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SC5307 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5307 HIGH VOLTAGE SWITCHING APPLICATIONS • High Voltage : V ç;e o = 400V • Low Saturation Voltage : VCE sat - °-4V (Typ.) d c = 20mA, Ig -0 .5 m A ) MAXIMUM RATINGS (Ta = 25°C)
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2SC5307
250mm2X0
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Untitled
Abstract: No abstract text available
Text: T O SH IB A S-AU68L TOSHIBA RF POWER AMPLIFIER MODULE S-AU68L UHF BAND FM POWER AMPLIFIER MODULE U n it in mm MAXIMUM RATINGS Tc = 25°C SYM BOL CHARACTERISTIC DC Supply Voltage DC Supply Voltage Input Power Output Power Total Current O perating C ase Tem perature Range
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S-AU68L
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC5086FT 7<;r ^nsfiFT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. N F =l.ldB , |S21el2 = lldB f=lG H z 1.2 ± 0 .0 5 MAXIMUM RATINGS (Ta = 25°C)
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2SC5086FT
S21el2
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 1SV302 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV3 0 2 CATV TUNING C%sj! C2 5 V = 17.5 • High Capacitance Ratio : • Low Series Resistance : rs = 1.05Q Typ. • Useful for Small Size Tuner. U nit in mm (Typ.)
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1SV302
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Untitled
Abstract: No abstract text available
Text: TOSHIBA HN3C16F TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C16F Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS h 0.2 2.8 -0.3 Including Two Devices in SM6 Super Mini Type with 6 Leads I-0.2 - MAXIMUM RATINGS (Ta = 25°C)
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HN3C16F
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Untitled
Abstract: No abstract text available
Text: TOSHIBA S-AU35AVL,S-AU35AL,S-AU35AH,S-AU35AVH,S-AU35ASH TOSHIBA RF POWER AMPLIFIER MODULE S-AU35AVL, S-AU35AL, S-AU35AH, S-AU35AVH, S-AU35ASH Unit in mm 30.0 ± .5 f = 360—380MHz S-AU35AVL RI. 5 + 0. 2 f = 400~430MHz S-AU35AL S-AU35AH f = 450—470MHz II
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S-AU35AVL
S-AU35AL
S-AU35AH
S-AU35AVH
S-AU35ASH
S-AU35AVL,
S-AU35AL,
S-AU35AH,
S-AU35AVH,
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Untitled
Abstract: No abstract text available
Text: 2SC5111 FT TO SHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 11 FT FOR VCO APPLICATION U n it in mm 1.2 ± 0 .0 5 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current
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2SC5111
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TPS825 TOSHIBA PHOTO IC SILICON EPITAXIAL PLANAR T• P■ ÇMF f t 7 R PHOTO IC FOR PLASTIC FIBER/POLYM ER CLAD FIBER U nit in mm TPS825 contains a light receiving IC integrating photo diode, amplifier circuit, waveform shaping circuit, etc. in 1 chip.
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TPS825
TPS825
100/ys
200pF.
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC5233 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC 5233 GENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION Low Saturation Voltage Large Collector Current VCE (sat) (D = 15mV (Typ.) @ I q = 10mA / Iß = 0.5mA
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2SC5233
500mA
1001EA
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC5066FT TOSHIBA TRANSISTOR K f SILICON NPN EPITAXIAL PLANAR TYPE RilfifiFT V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • NF = l.ld B , |S2 ie l2 = 12dB U n it in mm 1.2 ± 0 .0 5 f= lG H z 0.8 ± 0.05
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2SC5066FT
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC5096FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. NF = 1.8dB, |S2ie l2 = 7.5dB f=2GHz 1.2 ± 0 .0 5 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC5096FT
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TPS805 TOSHIBA PHOTO IC PHOTO IC FOR PHOTO INTERRUPTER SILICON EPITAXIAL PLANAR TPS80 5 Unit in mm 4 PHOTOELECTRIC COUNTER LhJ POSITION AND ROTATIONAL SPEED SENSOR +o +o 4 .4 -0 .2 • TPS805 is a photo IC integrating photo diode, amplifier circuit
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TPS805
TPS80
TPS805
900nm
TLN107A,
TLN107A
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Untitled
Abstract: No abstract text available
Text: 2SK1739 T O SH IB A TOSHIBA FIELD EFFECT TRANSISTOR K I Í 1 SILICON N CHANNEL MOS TYPE 7 Í Q Unit in mm RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER Output Power Po = 90W Min. 7D = 50%(Typ.) Efficiency f= 770MHz Frequency Push - Pull Structure Package
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2SK1739
770MHz
220pF
4700pF
200pF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 3SK259 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK259 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS TV TUNER VHF WIDE BAND RF AMPLIFIER APPLICATIONS • • • 2.1 ± 0.1 ,1.25 + 0.1 Superior Cross Modulation Performance.
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3SK259
025pF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC2639 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 7 Ç C 7 fi 3 Q VHF BAND POWER AMPLIFIER APPLICATIONS Output Power : U nit in mm Po = 15W Min. i'*f = 1 7KMTT? ’ V• / i n = 19. KV •>P - i- = 1 3W Ì/ MAXIMUM RATINGS (Tc = 25°C)
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2SC2639
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC2638 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C2 6 38 VHF BAND POWER AMPLIFIER APPLICATIONS • Unit in mm Output Power : Po = 6W Min. (f= 175MHz, V <x = 12.5V, Pi = 0.5W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL
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2SC2638
175MHz,
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 10JL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2CZ47A Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATION 03.2±O.2 10 .3 M A X . CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage Vr rm = 600 V Average Output Rectified Current I0 = 10 A
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10JL2CZ47A
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