TRANSISTOR SU 312 Search Results

CT 1975 sam

Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the

Contextual Info: su ^£.mi-dond\jictoi Lptoauoli, Una. LS 2N458A 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 PNP GERMANIUM POWER TRANSISTOR JEDEC TO-3 CASE 2N458A type is a PNP Germanium Alloy Junction Power Transistor manufacture

169800

Abstract: 80500 TRANSISTOR D 5036 cd 4599 4463 B 80500 bb
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES • LOW NOISE: 1.3 dB AT 2.0 GHz • LOW VOLTAGE OPERATION • EASY TO MATCH • HIGH GAIN BANDWIDTH PRODUCT: fTof 13 GHz 18 SOT 343 STYLE 19 (3 PIN ULTRA SU PER MINI MOLD) 30 (SOT 323 STYLE)

Contextual Info: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES DESCRIPTION • LOW COST T he N E 9 44 series o f NPN silicon epitaxial b ipo lar transisto rs is intended fo r use in ge ne ral purpose U H F o scilla to r and m ixer applicatio ns. It is su ita b le fo r au tom otive keyless entry

triac tic 236

Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
Contextual Info: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD

Contextual Info: BA 3128N B A 3128F Audio-switched operational amplifier 2 inputs, 1 output The BA3128N and BA3128F are operational amplifiers provided with an analog switch. This enables the gain of the amplifiers to be switched at the same time as the inputs to the amplifiers.

TK15120

Abstract: TK15120M
Contextual Info: r& T O K O TK15120 TWO-CHANNEL MUTING IC FEATURES APPLICATIONS • Wide Operating Voltage ■ Audio Systems ■ Ground Muting Method ■ Audio Mixers ■ Large Signal Attenuation ■ Special Effects ■ Control of Large Signal Level ■ Musical Instruments

M0C3022

Abstract: M0C3021 M0C3023 H22L BPW 56 photo H11FI H74AI H11M4 21ab H2482
Contextual Info: Quick-Reference Product Guide Selection Charts INFRARED EMITTERS TYPE NO. y & 54A S Ä j f # / 54 / JV V / jL & s /s s /^ s ^ 1 N 6 26 4 1N 6 26 S 1 N6266 CQ X 1 4 CQ X1 5 CQX16 CQ X1 7 FSD1 FSD 2 FSD3 F5E1 FSE2 F5E3 F5F1 F5G1 IE D 5 5 C L ED S5 B LED56 L ED SSC F

Halbleiterbauelemente DDR

Abstract: mikroelektronik Heft 12 VEB mikroelektronik information applikation Mikroelektronik Information Applikation Transistoren DDR information applikation mikroelektronik mikroelektronik Heft sy 710 applikation heft
Contextual Info: m o t ^ o e l e l - c f a n c i r Information Applikation Bauelemente der Leistungs­ elektronik SW77 Bipolare SchaltTransistoren i i l - c m t n r D o lk in î^ e lB l-c ta n a r iik Information Applikation H e f t : BAUELEMENTE DER LEISTUNGSELEKTRONIK

Contextual Info: omRon EE-SPY311/411/312/412 Accurately Detects Objects Placed in Front of Mirror-like Background • A mirror-like background can be used as long as the distance between the sensor and the background is 20 mm or more ■ Detects an object as small as a 0.05-mm-dia.

Contextual Info: h a r ® S E M I C O N D U C T O R C A 5 1 3 0 , C A 5 1 3 0 A M • 15MHz, BiMOS M icrop ro cessor O perational Am plifiers with M OSFET Input/CMOS Output November 1996 Features Description • M OSFET Input Stage C A 5 13 0A and C A 5 13 0 are integrated circu it opera tiona l

Contextual Info: CA5160. CA5160A h a r r is S E M I C O N D U C T O R M W W ^ • 4 MHz, BiM OS M icroprocessor Operational Amplifiers with M O S F E T Input/CMOS Output November 1996 Features Description • M O S F E T In p u t S tag e C A 5160A and C A 5160 are integrated circuit operational

equivalent ic of ca 3130

Contextual Info: fH HARRIS Operational Amplifiers S E M I C O N D U C T O R RC A Gi CA3130A, CA31 30 I NTERSIL M ay 1 9 9 0 BiMOS Operational Amplifiers With M O S F E T In p u t/C M O S O utput F e a tu re s : A p p lic a tio n s : • MOSFET in p u t stage provides: very h ig h Z/ = 1.5 TCI 1.5 *

TRANSISTOR nf 842

Abstract: D 843 Transistor transistor su 312
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ±0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz 1.25 ± 0.1 HIGH GAIN:

Contextual Info: 3 HFA3127/883 February 1995 Ultra High Frequency Transistor Array Features Description • This Circuit is Processed In Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HFA3127/883 is an Ultra High Frequency Transistor

BUH417

Contextual Info: f Z 7 Ä 7# S C S -T H O M S O N [ Ä i m i O T 9 i * S BUH417 CRT HORIZONTAL DEFLECTION HIGH VOLTAGE NPN FASTSWITCHING TRANSISTOR . HIGH BREAKDOWN VOLTAGE CAPABILITY • FULLY INSULATED PACKAGE FOR EASY MOUNTING . LOW SATURATION VOLTAGE . HIGH SWITCHING SPEED

CA18CLF08NAM1

Abstract: CA18CLF08PAM1 CA18CLN12PA CA18CLN12PAM1 CA18CLF08PA CA18CLN12 NPN Transistor 1A metal switching CA18CLF08NA CA18CLN12NAM1 CA18CLN12NA
Contextual Info: Proximity Sensors Capacitive LD E I H Thermoplastic Polyester Housing LES P I TR Type CA, M18, DC • Featuring TRIPLESHIELD™ sensor protection • Adjustable sensing distance 3-8 mm or 3-12 mm • Rated operational voltage: 10-40 VDC • Output: DC 200 mA, NPN or PNP

Contextual Info: C A 3126 H a r r is Ê S E M I C O N D U C T O R TV Chroma Processor N o vem b er 1996 Features Description • Phase Locked Subcarrier Regeneration Utilizes Sample-and-Hold Techniques T he H arris C A 3 12 6 is a m on olithic silicon integrated circu it d e sig ned for T V ch ro m a processing and is id ea lly suite d for

transistor 1211

Abstract: transistor su 312 transistor zo 109
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

NTE283

Abstract: npn 10a 800v
Contextual Info: NTE283 Silicon NPN Transistor Horizontal Output, Switch Description: The NTE283 is a silicon NPN transistor in a TO3 type package designed for high–voltage, high– speed, power switching in inductive circuits where fall time is critical. Typical applications include

4419 power ic

Abstract: EN4419 4419 stk733c STK733 RSL AH Chopper Regulator FET scrrr
Contextual Info: Ordering number : EN4419 Thick Film Hybrid IC STK733C No. 4419 SAXYO 24 V Output MOS Chopper Regulator Overview Package Dimensions The STK733C is a 24 V dedicated, single-output regulator equipped applied to a switching device and is equipped with a step-dow n chopper which em ploys a power metal oxide

CA18CLF08

Contextual Info: Proximity Sensors Capacitive LD E I H Thermoplastic Polyester Housing LES P I TR Type CA, M18, DC • Featuring TRIPLESHIELD™ sensor protection • Adjustable sensing distance 3-8 mm or 3-12 mm • Rated operational voltage: 10-40 VDC • Output: DC 200 mA, NPN or PNP

Contextual Info: POUEREX INC 3RE D • 73^21 OO OMlTb 1 B P R X T - 3 3 - J S " m Ê Ê B Œ KD221205HB X Po w e rex, Inc., Hlllis Street, Youngw ood, Pennsylvania 15697 41 Z 925-7272 Powerex Europe, S.A., 4 2 8 Avenue G. Durand, B P 1 0 7 ,72003 Le Mans, France (4 3 )4 1 .1 4 .1 4

AX407

Contextual Info: 19-4739; Rev 0:2/92 y i / i y j x i > i / i 1.2\±A M ax, Single/Dual, Single-Supply Op Amps _Features The MAX406/MAX407 are low-voltage, m icropower, pre­ cision op amps designed for battery-operated systems. They feature a 1|iA per amplifier quiescent current that is