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    TRANSISTOR SOT23, VBE 8V Search Results

    TRANSISTOR SOT23, VBE 8V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SOT23, VBE 8V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HFA3135IHZ96

    Abstract: No abstract text available
    Text: HFA3134, HFA3135 Data Sheet August 12, 2005 Ultra High Frequency Matched Pair Transistors FN4445.2 Features • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . 8.5GHz The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation’s


    Original     		HFA3134, HFA3135 FN4445 HFA3134 HFA3135 HFA3135IHZ96 PDF

    HFA3134IHZ96

    Abstract: HFA3135IHZ96 HFA3134IH96 HFA3135IH96 EIAJ-SC74 sot23/HFA3134IHZ96 HFA3134 HFA3135
    Text: HFA3134, HFA3135 Data Sheet August 12, 2005 Ultra High Frequency Matched Pair Transistors Features The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation’s complementary bipolar UHF-1X process. The NPN


    Original     		HFA3134, HFA3135 HFA3134 HFA3135 FN4445 HFA3134IHZ96 HFA3135IHZ96 HFA3134IH96 HFA3135IH96 EIAJ-SC74 sot23/HFA3134IHZ96 PDF

    Untitled

    Abstract: No abstract text available
    Text: HFA3134, HFA3135 Data Sheet July 21, 2005 Ultra High Frequency Matched Pair Transistors Features The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation’s complementary bipolar UHF-1X process. The NPN


    Original     		HFA3134, HFA3135 HFA3134 HFA3135 FN4445 PDF

    NPN pnp MATCHED PAIRS array

    Abstract: LA 4451
    Text: HFA3134, HFA3135 Data Sheet February 1998 Ultra High Frequency Matched Pair Transistors [ /Title HFA3 134, HFA31 35 /Subject (Ultra High Frequency Matche d Pair Transistors) /Autho r () /Keywords (Intersil Corporation, semiconductor, two, transistor array,


    Original     		HFA3134, HFA3135 HFA31 HFA3134 HFA3135 NPN pnp MATCHED PAIRS array LA 4451 PDF

    H05 SOT23 5

    Abstract: A1557 TRANSISTOR SOT23, Vbe 8V ES SC74 P6.064 Package transistor pnp 3015 HFA3134 HFA3134IH96 HFA3135 HFA3135IH96
    Text: HFA3134, HFA3135 TM Data Sheet February 1998 Ultra High Frequency Matched Pair Transistors File Number 4445 Features • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . .8.5GHz The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation’s


    Original     		HFA3134, HFA3135 HFA3134 HFA3135 H05 SOT23 5 A1557 TRANSISTOR SOT23, Vbe 8V ES SC74 P6.064 Package transistor pnp 3015 HFA3134IH96 HFA3135IH96 PDF

    TRANSISTOR SOT23, Vbe 8V

    Abstract: TRANSISTOR 1P SOT23 NPN pnp MATCHED PAIRS PNP 5GHz transistor pnp 3015 HFA3134 HFA3134IH96 HFA3135 HFA3135IH96 H05 SOT23 5
    Text: HFA3134, HFA3135 Data Sheet February 1998 Ultra High Frequency Matched Pair Transistors File Number 4445 Features • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . .8.5GHz The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation’s


    Original     		HFA3134, HFA3135 HFA3134 HFA3135 TRANSISTOR SOT23, Vbe 8V TRANSISTOR 1P SOT23 NPN pnp MATCHED PAIRS PNP 5GHz transistor pnp 3015 HFA3134IH96 HFA3135IH96 H05 SOT23 5 PDF

    .FT SOT23-6

    Abstract: SOT23-6, complementary transistors
    Text: S E M I C O N D U C T O R HFA3134, HFA3135 Ultra High Frequency Matched Pair Transistors February 1998 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . 8.5GHz The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Harris Semiconductor’s


    Original     		HFA3134, HFA3135 HFA3134 HFA3135 1-800-4-HARRIS .FT SOT23-6 SOT23-6, complementary transistors PDF

    BFR106

    Abstract: Low Noise R.F AN077 BCW66
    Text: BFR106 NPN Silicon RF Transistor • High linearity low noise RF transistor • 22dBm OP1dB and 31dBm OIP3 2 3 @ 900MHz,8V,70mA 1 • For UHF/VHF applications • Driver for multistage amplifiers • For linear broadband and antenna amplifiers • Collector design supports 5 V supply voltage


    Original     		BFR106 22dBm 31dBm 900MHz BFR106 Low Noise R.F AN077 BCW66 PDF

    TRANSISTOR SOT23, Vbe 8V

    Abstract: FMMT614 DSA003700
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FMMT614 TYPICAL CHARACTERISTICS 2 2 +25°C I+/I*=1000 1m 75k 10m 100m 1 10 1m 100m 10m 1 IC - Collector Current A IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 2.4 V+-=5V ABSOLUTE MAXIMUM RATINGS.


    Original     		FMMT614 500mA 500mA, 100mA, 100mHz TRANSISTOR SOT23, Vbe 8V FMMT614 DSA003700 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FMMT614 TYPICAL CHARACTERISTICS 2 2 +25°C I+/I*=1000 1m 75k 10m 100m 1 10 1m 100m 10m 1 IC - Collector Current A IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 2.4 V+-=5V ABSOLUTE MAXIMUM RATINGS.


    Original     		FMMT614 500mA 500mA, 100mA, 100mHz PDF

    VP4-0140

    Abstract: T17 DUAL TRANSISTOR lead gel battery KSH30 MAX1864 MAX1865 MAX1964 MAX1965 MAX8513 MAX8514
    Text: Maxim > App Notes > AUTOMOTIVE Keywords: Current limit, foldback, fold back, linear regulator, lead-acid battery Nov 16, 2005 APPLICATION NOTE 3654 Current Limiting for the MAX1864 Auxiliary Regulator Abstract: The MAX1864 is a low-cost, multiple-output converter consisting of a switching buck circuit and two


    Original     		MAX1864 MAX1864: MAX1865: MAX1964: MAX1965: MAX8513: MAX8514: AN3654, APP3654, VP4-0140 T17 DUAL TRANSISTOR lead gel battery KSH30 MAX1865 MAX1964 MAX1965 MAX8513 MAX8514 PDF

    ZETEX GATE DRIVER

    Abstract: ZXGD3004E6 ZXGD3003E6 ZXGD3003 PNP POWER TRANSISTOR SOT23 MOSFET sot23-6 npn 2222 transistor selection criteria of bipolar transistor ZXGD3002 ZXGD3002E6
    Text: DN80 Bipolar transistors for MOSFET gate driving applications Peter Blair, Product Development Manager Over the last few years MOSFETs have become the device of choice in power switching applications. Whilst on-resistances have significantly reduced, they often require a driver stage


    Original     		D-81541 ZETEX GATE DRIVER ZXGD3004E6 ZXGD3003E6 ZXGD3003 PNP POWER TRANSISTOR SOT23 MOSFET sot23-6 npn 2222 transistor selection criteria of bipolar transistor ZXGD3002 ZXGD3002E6 PDF

    smd transistor 5k

    Abstract: No abstract text available
    Text: Transistors IC Transistor SMD Type Product specification FMMT614 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 hFE up to 5k at IC= 500mA 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Fast switching +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1


    Original     		FMMT614 OT-23 500mA 500mA 100mA 100MHz smd transistor 5k PDF

    BFR 182 transistor

    Abstract: Transistor BFR 900mhz BF 182 transistor Transistor BFR 93 F131 Q62702-F1315
    Text: BFR 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		900MHz OT-23 Q62702-F1315 Sep-04-1996 BFR 182 transistor Transistor BFR 900mhz BF 182 transistor Transistor BFR 93 F131 Q62702-F1315 PDF

    smd transistor 5k

    Abstract: SMD BR 17 smd transistor 614 FMMT614 smd marking 5K
    Text: Transistors SMD Type Power Darlington Transistor FMMT614 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 hFE up to 5k at IC= 500mA 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Fast switching +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1


    Original     		FMMT614 OT-23 500mA 500mA 100mA 100MHz smd transistor 5k SMD BR 17 smd transistor 614 FMMT614 smd marking 5K PDF

    Transistor BFR 14

    Abstract: Q62702-F1316 SIEMENS marking
    Text: BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		OT-23 Q62702-F1316 Dec-11-1996 Transistor BFR 14 Q62702-F1316 SIEMENS marking PDF

    Q62702-F1296

    Abstract: No abstract text available
    Text: BFR 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • fT = 7GHz F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		900MHz OT-23 Q62702-F1296 Feb-04-1997 Q62702-F1296 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTP05120HFF 120V, SOT23F, PNP medium power Darlington transistor Summary BVCEO > -120V IC cont = -1A VCE(sat) < 1.1V @ 1A PD = 1.5W Complementary part number ZXTN04120HFF Description C This high performance PNP Darlington transistor is housed in the small outline SOT23 flat package for applications


    Original     		ZXTP05120HFF OT23F, -120V ZXTN04120HFF ZXTP05120HFFTA D-81541 PDF

    BFR106

    Abstract: Q62702-F1219 GMA marking Transistor BFR 80 BFr pnp transistor
    Text: BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 PNP ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		OT-23 Q62702-F1219 900MHz Dec-11-1996 BFR106 Q62702-F1219 GMA marking Transistor BFR 80 BFr pnp transistor PDF

    MJE 280 power transistor

    Abstract: Q62702-F1298 bfr280
    Text: BFR 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		900MHz OT-23 Q62702-F1298 Dec-11-1996 MJE 280 power transistor Q62702-F1298 bfr280 PDF

    TRANSISTOR 131-6 BJ 946

    Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
    Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise


    OCR Scan     		B3-B3715 B3715-X-X-7600 TRANSISTOR 131-6 BJ 946 transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: ¡ jj H S E MA I C OR N DR U C TIS O R HFA3134, HFA3135 " " " • W ■ W " J M mm M ■ W ' U W W Ultra High Frequency Matched Pair Transistors February 1998 Description Features • NPN Transistor f r . 8.5GHz


    OCR Scan     		HFA3134, HFA3135 HFA3134 HFA3135 1-800-4-HARRIS PDF

    Untitled

    Abstract: No abstract text available
    Text: ¡SAMSUNG SEM IC ON DU CTOR MJE200 INC IME 0 | 7^4142 □ 0 Q 7 b tit NPN EPITAXIAL SILICON TRANSISTOR CÒ LLECTOR-EM ITTER SU STAINING VOLTAGE LOW CO LLECTOR-EM ITTER SATURATION VOLTAGE HIGH CU RREN T GAIN-BANDW IDTH PRODUCT-MIN fT=65MHz @ lc=100m A Complementary to MJE210


    OCR Scan     		MJE200 65MHz MJE210 GQG77fe PDF

    BFT65

    Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
    Text: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions


    OCR Scan     		PDF