TRANSISTOR S2F Search Results

TRANSISTOR S2F

Abstract: FJX2907A
Contextual Info: FJX2907A FJX2907A 3 General Purpose Transistor 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -60 Units V VCES Collector-Emitter Voltage

TRANSISTOR S2F

Abstract: FJX2907A
Contextual Info: FJX2907A FJX2907A General Purpose Transistor 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -60 Units V VCES Collector-Emitter Voltage

FJX2907A

Abstract: TRANSISTOR S2F
Contextual Info: FJX2907A FJX2907A 3 General Purpose Transistor 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -60 Units V VCES Collector-Emitter Voltage

TRANSISTOR S2F

Contextual Info: FJX2907A FJX2907A 3 General Purpose Transistor 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -60 Units V VCES Collector-Emitter Voltage

TRANSISTOR S2F

Contextual Info: FJX2907A FJX2907A General Purpose Transistor 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCES Collector-Emitter Voltage

PJ 0349

Abstract: PJ 2399 0709s
Contextual Info: mUKM PA C K A R D W hot HEWLETT General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA

SMBT2222A SOT23

Abstract: of ic 2907
Contextual Info: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2222A / MMBT2222A NPN • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking SMBT2907A/MMBT2907A s2F

2907 TRANSISTOR PNP

Abstract: 2907 MMBT2222A SMBT2222A
Contextual Info: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2222A / MMBT2222A NPN • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2907A/MMBT2907A s2F

S2F MARKING SOT23

Abstract: TRANSISTOR S2F s2F SOT23 BCW66 MMBT2222A SMBT2222A MARKING CODE 24 TRANSISTOR smbt2222a sot23 marking code YM MARKING CODE SOT23-3
Contextual Info: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2222A / MMBT2222A NPN • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2907A/MMBT2907A s2F

Contextual Info: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT2222A/ MMBT2222A NPN 2 1 Type Marking SMBT2907A/MMBT2907A s2F 1=B Pin Configuration

Contextual Info: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT2222A/ MMBT2222A NPN 2 1 Type Marking SMBT2907A/MMBT2907A s2F 1=B Pin Configuration

Contextual Info: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2222A / MMBT2222A NPN Type Marking SMBT2907A/MMBT2907A s2F Pin Configuration 1=B

2907 TRANSISTOR PNP

Abstract: marking eh sot23 of ic 2907 2907 2907 TRANSISTOR MMBT2222A SMBT2222A
Contextual Info: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2222A / MMBT2222A NPN Type Marking SMBT2907A/MMBT2907A s2F Pin Configuration 1=B

2907 TRANSISTOR PNP

Abstract: 2907 S2F MARKING SOT23 MMBT2222A SMBT2222A
Contextual Info: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary type: SMBT2222A/ MMBT2222A NPN 2 1 Type Marking SMBT2907A/MMBT2907A s2F 1=B Pin Configuration 2=E 3=C

2907A

Abstract: 2907a TRANSISTOR PNP transistor s2f S2F MARKING SOT23 2907a transistor npn 2907A S2F SOT-23 s2F SOT23 PNP 2907a SOT23 Q68000-A6474
Contextual Info: SMBT 2907A PNP Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2222A NPN 2 1 Type Marking Ordering Code Pin Configuration SMBT 2907A s2F 1=B Q68000-A6474 2=E

Contextual Info: SMBT2907A PNP Silicon Switching Transistor 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary type: SMBT2222A NPN 2 1 Type Marking SMBT2907A s2F Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings

Contextual Info: SIEMENS SMBT 2907A PNP Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-em itter saturation voltage • C om plem entary type: SM BT 2222A NPN Type Marking Ordering Code Pin Configuration SM BT 2907A s2F Q 68000-A6474

2907 TRANSISTOR PNP

Abstract: 2907a 2907 2907a transistor 2907a TRANSISTOR PNP npn 2907A TRANSISTOR S2F a 2907 MARKING 2907A transistor 2907
Contextual Info: SMBT 2907A PNP Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2222A NPN 2 1 Type Marking SMBT 2907A s2F Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23

Contextual Info: TOSHIBA 2SK3443 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ji-MOSV T E N T A T IV E 2SK3443 High Speed Switching, High Current Applications Industrial Applications U nit in mm Switching Regulator, DC-DC Converter and Motor Drive Applications

Contextual Info: SGS-THOMSON L7800AB/AC SERIES PRECISION 1A REGULATORS • OUTPUT CURRENT IN EXCESS OF 1A ■ OUTPUT VOLTAGES OF 5; 6; 8; 9; 12; 15; 18; 24V ■ THERMAL OVERLOAD PROTECTION ■ SHORT CIRCUIT PROTECTION ■ OUTPUT TRANSISTOR SOA PROTECTION ■ 2% OUTPUT VOLTAGE TOLERANCE

Contextual Info: 32E D • fl23fc.320 ÜQL73L3 S « S I P PNP Silicon Switching Transistor SXT 2907 A _ SIEMENS/ SPCL-, SEMICONDS _ * f 3 * 7 -/* • • High current gain: 0.1 to 500 mA Low collector-emitter saturation voltage Type M arking Ordering code fo r

i354

Abstract: 2N7222 IRFM440 IRFM440D i-354
Contextual Info: Data Sheet No. PD-9.492C INTERNATIONAL RECTIFIER I& R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM440 SN7SSS JANTX2N7222 JANTXV2N7222 N-CHANNEL [REF: MIL-S-1S500/596] Product Summary 500 Volt, 0.85 Ohm HEXFET The HEXFET® technology is the key to International

DIODE S2F

Abstract: TPC6006-H
Contextual Info: TPC6006-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSIII TPC6006-H Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • High-speed switching • Small gate charge: Qsw = 2.4 nC (typ.)

cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154