FL23FC Search Results

BF963

Abstract: bf965 BF960 BF 960 14271-D u971 BF996S
Contextual Info: SIEMENS/ SPCL-, SEMICONDS fifl 8236320 SIEMENS/ S P C L , SEMICONDS ]>F|fl23fc,32D G ü m a T D 1 | ~ Ô8D 14270 D T~ $ I ^ MOS Transistors M OS field effect tetrodes P la s tic p acka g e X-plast Type Maximum ratings N-Kanal I/ds V Id mA Characteristics TA = 25°C

SIEMENS VF 100

Abstract: GS7070
Contextual Info: Silicon Switching Diode 32E D • BAL99 fl23fc.32G 0GlbM7b b ISIP SIEMENS/ SPCLi SEMI COND S • For high-speed switching Typo Marking Ordering co de for versions In bulk Ordering co d e or version s on 8 mm-tape P acka g e BAL99 JF Q62702-A611 Q62702-A687

PHOTO SCR OPTOCOUPLER

Contextual Info: SIEMENS CMPNTSi OPTO 4ME D WM fl23fc,32b 0 0 0 5 0 2 4 SIEM ENS -T-m-yi 0 B SIEX IL400 PHOTO SCR OPTOCOUPLER Advance Data Sheet • 400 Volts Blocking Voltage • TUrn On Current lft S.O m A typical • Gate Trigger Current (IqT) - 20/iA • Gate Trigger Voltage (tQT) - 0.6 Volt

Contextual Info: 32E D • fl23fc.320 ÜQL73L3 S « S I P PNP Silicon Switching Transistor SXT 2907 A _ SIEMENS/ SPCL-, SEMICONDS _ * f 3 * 7 -/* • • High current gain: 0.1 to 500 mA Low collector-emitter saturation voltage Type M arking Ordering code fo r

Contextual Info: SIEMENS SFH 200 SILICON PHOTODIODE LOW DARK CURRENT FEA TURES • Very Large Zero Crossover * High Reliability * • * • 0.2* S.08 mm Lead Spacing Low Noise Transparent Plastic Package Short Switching Time DESCRIPTIO N The SFH 200 silicon planar photodiode,

SFH 910

Contextual Info: SFH 910 SIEMENS Dît rERLNTIAL PHOTO INTERRRUPTER WITH COUNTING PULSE & DIRECTION RECOGNITION P a cka g e D im e n sio n s in In c h e s m m 967 (24 6) 1 2 3 4 5 6 951 (24 2) 754 (1 9 15) 746(18 95) 130(3 3) 122(3 1) _20 0 (5 06) Anode Cathode GND Dir Clk

Contextual Info: 35E D • 823b32Q QGlb'ìbS T « S I P NPN Silicon RF Transistor BFQ 81 SIEMENS/ SPCLi SEMICONDS _ • For low-noise amplifiers up to 2 GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 to 20 mA.

UAA180

Abstract: IR2406 RBG1000
Contextual Info: SIEMENS RBG-1000 SUPER-RED OBG-1000 YELLOW YBG-1000 GREEN GBG-1000 RED 10 Element Bar Graph Package Dimensions in Inches mm .010 .04 (1.02) typ. (.25) typ. .100 (2.54) typ. .36 (9.14) .15 (3.81) .99(25.15) T .30 (7.62) L .20 T (5.08) Part Identification Location

Contextual Info: PNP Silicon AF Transistors 32E D m Û23b320 OOlbbfiS 4 « S I P T 'M - IJ SIEMENS/ SPCL-. SEMICONDS • • • • • a a a a BCW61 BCX71 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz

Contextual Info: SIEMENS SFH 484401 GaAIAs-L \ S E R 5W FEATURES • MOCVD Quantum-Well Structure • Dielectric Asymmetric Coated Laser Mirrors • 5 Laserdiodes on Submount on a Massive Heatsink • Emission Width : 5 x 200 pm; Spacing 2mm • Package: Row Design • Applications

uaa170

Abstract: UAA180 7 segment led display SIEMENS 12 element LED bar display IR2406 GBG-4850 OBG-4830 led bar siemens 7 segment display lm3915 uaa160
Contextual Info: SIEMENS RBG-4820 SUPER-RED OBG-4830 YELLOW YBG-4840 GREEN GBG-4850 RED 10 Element Linear Display Package Dimensions in Inches mm P ro d u c t M a rk in g E le m e n t 10 Maximum Ratings S torage/O perating Tem perature R a n g e . -20°C to +85°C

IL300G

Abstract: siemens IL300-EF IL300 equivalent IL300 IL300-D r4k diode optocouplers 501 353b3 IL300-X006 simple servo amplifer
Contextual Info: SIEMENS IL300 LINEAR OPTOCOUPLERS FEATURES • • • • Couples AC and DC signals 0.01% Servo Linearity W ide Bandwidth, >200 KHz High Gain Stability, ±0.005%/°C Low Input-Output Capacitance Low Power C onsumption, < 15mw W ithstand Test Voltage, 7500 V A C ^ ,

BC5471

Abstract: BC547E BC 548 NPN relay 876 N 2C S BC5461 BC2371 BC516 548 BC550 bc4151 TLC 5491
Contextual Info: SIEMENS/ SPCL-. SEMIC ON DS Application Type NPN = N PNP = P 2TE D • epitaxial = E planar = PL suitable complementary transistors fl23b350 O D l b m b ■ T-'^-Ol Max. ratings Vc b o VCEO VfeBO le r, Plot flth JA [l/CES] V V V mA c mW K/W BC1671>N BC1681)N

DL1414

Abstract: DL1414T DL1414* display IDA1414-16 dl-1414 multiplex dual digit seven segment display siex Alphanumeric 14 SEGMENT DUAL Intelligent Display IDA141416-2 Berg ribbon cable
Contextual Info: IDA1414-16 SIEMENS .112" Red, 17 Segment, 16 Character DL1414 Intelligent Display Assembly IDA1414-16-1 Buffered Input Data Lines rm F .30 4.50 - .28-1 •121 -3.625.82 Ref. " 1 <— T .950 00® cs 2)a:3® © e30cc L □T 1.20 JL £-.118 4 Places FEATURES

Contextual Info: LS K382 YELLOW LY K382 GREEN LG K382 ORANGE LO K382 PURE GREEN LP K382 SIEMENS SUPER-RED T1 3mm Super ARGUS LED Lamp Package Dimensions in Inches (mm) Surface not flat 028 (0.7) 0 1 |0 < ) T T 141 (3.6) .126 (3.2) .031 (0.8) .016(0.4) LED Lamps .024 (0.6)

transistor c 6093

Abstract: transistor c 6091 transistor C 6092 IOR 5300 diode gde 78
Contextual Info: SIEMENS CAPITAL/ OPTO •=]□ D § ÛS3L,32t, D0D3347 3 Jj T-Vl-ÎZ SFH609 S IEM EN S Oplocoupleis Optolsolatois HIGH RELIABILITY PHOTOTRANSISTOR OPTOCOUPLER FEATURES Maximum Ratings • H ighest Q u ality Prem ium Device Emitter (GaAs infrared emitter)

m867

Abstract: ntc m867
Contextual Info: SFH 482201 SIEMENS G aA lA s-LA S ER DIODE 250 mW Package Dimensions in mm 1. 2. 3 4. Peltier-Cooler + NTC NTC Laserdiode Cathode 5 6 7 8 Laserdiode Anode Monitor Diode Anode Monitor Diode Cathode Peltier-Cooler (-) FEATURES Maximum Ratings * Quantum-W ell Structure Manufactured

Contextual Info: FT NPN Silicon AF Transistors 35E D • 6 5 3 b 3 5 Q O O lb b S H T - i * ? '1 9 ' BC 846 b M S I P _ - B C 850 SIEMENS/ SPCL-, SEMICONDS • • • • • For AF input stages and driver applications High current gain Low coilector-emitter saturation voltage

B80C

Contextual Info: B EE D • ô23b32Q Q017131 T « SIP PNP Silicon Switching Transistors _ S IE M E N S / SPCLi BSS 80 BSS 82 T ' SEM ICO N D S _ High D C current gain Low collector-emitter saturation voltage Complementary types: B S S 79, B S S 81 NPN Type BSS

Contextual Info: 32E D m Ô23b320 OGlb^flS S WÊ SIP NPN Silicon RF Transistor SIEMENS/ SP C Li SEMICONDS BFR35AP _ • For broadband amplifiers up to 2 GHz and fast non­ saturated switches at collector currents from 0.5 to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: 35E D • 023b3SG NPN Silicon RF Transìstor 0Q lbflñ3 & « S IP BFP 81 _SIEMENS/ SPCLi SEMICONDS f-3<- 1*7_ • For low-noise amplifiers up to 2 GHz at collector currents from 0.5 to 25 mA. S CECC-type In preparation: CECC 50002/. ESD : Electrostatic discharge sensitive device, observe handling precautions!