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    TRANSISTOR S1P Search Results

    TRANSISTOR S1P Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR S1P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FJX2222A NPN Epitaxial Silicon Transistor Features • General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 3 Marking S1P 2 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol


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    FJX2222A 325mW OT-323 PDF

    transistor s1p

    Abstract: MARKING S1P S1P transistor FJX2222A ESBC Fairchild dual NPN silicon transistor
    Text: FJX2222A NPN Epitaxial Silicon Transistor Features • General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 3 Marking S1P 2 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol


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    FJX2222A 325mW OT-323 transistor s1p MARKING S1P S1P transistor FJX2222A ESBC Fairchild dual NPN silicon transistor PDF

    MARKING s1P

    Abstract: FJX2222A transistor s1p
    Text: FJX2222A FJX2222A General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    FJX2222A 325mW OT-323 MARKING s1P FJX2222A transistor s1p PDF

    MARKING s1P

    Abstract: FJX2222A
    Text: FJX2222A FJX2222A 3 General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    FJX2222A 325mW OT-323 75ner MARKING s1P FJX2222A PDF

    MARKING s1P

    Abstract: FJX2222A transistor s1p
    Text: FJX2222A FJX2222A 3 General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    FJX2222A 325mW OT-323 75opment. MARKING s1P FJX2222A transistor s1p PDF

    transistor s1p

    Abstract: MARKING s1P
    Text: FJX2222A FJX2222A 3 General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    FJX2222A 325mW OT-323 FJX2222ATF transistor s1p MARKING s1P PDF

    transistor s1p

    Abstract: S1P transistor S1p MARKING F1 SOT-323
    Text: FJX2222A FJX2222A General Purpose Transistor 2 1 NPN Epitaxial Silicon Transistor SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCES Collector-Emitter Voltage


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    FJX2222A OT-323 transistor s1p S1P transistor S1p MARKING F1 SOT-323 PDF

    h11E

    Abstract: No abstract text available
    Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2907A / MMBT2907A PNP • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P


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    SMBT2222A/MMBT2222A SMBT2907A MMBT2907A SMBT2222A/MMBT2222A h11E PDF

    SMBT2907AW

    Abstract: MARKING s1P smbt2222a sot23 marking code S1p MARKING BCW66 77 ic marking code transistor marking code 24 24 marking code transistor transf SMBT2222A SOT23
    Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P Pin Configuration


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    SMBT2222A/MMBT2222A SMBT2907AW SMBT2222A/MMBT2222A BCW66 SMBT2907AW MARKING s1P smbt2222a sot23 marking code S1p MARKING BCW66 77 ic marking code transistor marking code 24 24 marking code transistor transf SMBT2222A SOT23 PDF

    s1P SOT23

    Abstract: 619 SOT23-3 h11e
    Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P Pin Configuration


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    SMBT2222A/MMBT2222A SMBT2907AW SMBT2222A/MMBT2222A s1P SOT23 619 SOT23-3 h11e PDF

    h22e

    Abstract: No abstract text available
    Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP Type Marking SMBT2222A/MMBT2222A s1P 1 Pin Configuration 1=B 2=E Package


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    SMBT2222A/MMBT2222A SMBT2907AW SMBT2222A/MMBT2222A h22e PDF

    MARKING s1P

    Abstract: No abstract text available
    Text: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161


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    SMBT2222A/ MMBT2222A SMBT2907A VPS05161 MARKING s1P PDF

    npn 2222 transistor

    Abstract: MMBT2222A SMBT2222A SMBT2907A MARKING s1P
    Text: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161


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    SMBT2222A/ MMBT2222A SMBT2907A VPS05161 2222/A EHP00744 EHP00745 npn 2222 transistor MMBT2222A SMBT2222A SMBT2907A MARKING s1P PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161


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    SMBT2222A/ MMBT2222A SMBT2907A VPS05161 PDF

    br 2222 npn

    Abstract: SMBT2222A SMBT2907A
    Text: SMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings


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    SMBT2222A SMBT2907A VPS05161 2222/A EHP00744 EHP00745 May-29-2001 br 2222 npn SMBT2222A SMBT2907A PDF

    npn 2222 transistor

    Abstract: s1P SOT23 SMBT2222A SOT23 SMBT2222A SMBT2907A MARKING s1P MARKING 1B SOT23 EHN00056
    Text: SMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings


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    SMBT2222A SMBT2907A VPS05161 2222/A EHP00744 EHP00745 Jul-11-2001 npn 2222 transistor s1P SOT23 SMBT2222A SOT23 SMBT2222A SMBT2907A MARKING s1P MARKING 1B SOT23 EHN00056 PDF

    CHT2222AGP

    Abstract: transistor s1p
    Text: CHENMKO ENTERPRISE CO.,LTD CHT2222AGP SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * Low voltage Max.=40V . * High saturation current capability.


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    CHT2222AGP OT-23 OT-23) 600mA) CHT2222AGP transistor s1p PDF

    CHT2222APT

    Abstract: transistor s1p
    Text: CHENMKO ENTERPRISE CO.,LTD CHT2222APT SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * Low voltage Max.=40V . * High saturation current capability.


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    CHT2222APT OT-23 OT-23) 600mA) 200ns CHT2222APT transistor s1p PDF

    transistor s1p

    Abstract: CHT4401PT SOT23 timer ic S1p MARKING
    Text: CHENMKO ENTERPRISE CO.,LTD CHT4401PT SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SOT-23 * Low voltage Max.=40V . * High saturation current capability.


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    CHT4401PT OT-23 600mA) 200ns transistor s1p CHT4401PT SOT23 timer ic S1p MARKING PDF

    TRANSISTOR N3

    Abstract: transistor P17 FET TRANSISTOR N2
    Text: On-Chip Peripheral Components 7 On-Chip Peripheral Components This chapter gives detailed information about all on-chip peripherals of the SAB 80 C 515 except for the integrated interrupt controller, which is described separately in chapter 8. Sections 7.1 and


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    PDF

    NB SOT-23 NPN

    Abstract: ch3904 CHT44 transistor marking s1a transistor s1p marking 1P sot-23 T05 sot-23 transistor marking t05 transistor C4G sot-23 39 MARKING SOT223
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Collector to Emitter Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Voltage Power Gain Outline Collector to


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    CH3904T CHT2222T 2SC4097 CH3904W CHT05 CHT42 CHTA42L CHT44 2SC2411K 2SC2412K NB SOT-23 NPN ch3904 CHT44 transistor marking s1a transistor s1p marking 1P sot-23 T05 sot-23 transistor marking t05 transistor C4G sot-23 39 MARKING SOT223 PDF

    4AC17

    Abstract: 4AC16 3AC13 5AE12 3AA11 3AC12 4AA11 4AA12 4AC15 4AC24
    Text: noHm Power Transistor Arrays Five 12 pin, Four 10 pin and three 8 pin T 0 -2 2 0 power transistors are packed in a single package. Suitable for motor drive and printer dot drive. PSIP8Pin VcEO V Equivalent circuits -6 ☆3AA13 -8 0 -4 *3 A C 1 1 © ffi


    OCR Scan
    O-22C) 3AA11 T3AA12 V3AA13 r3AC11 3AC12 3AC13 4AA11 25pcs PSIP10 4AC17 4AC16 3AC13 5AE12 3AA11 3AC12 4AA11 4AA12 4AC15 4AC24 PDF

    702 TRANSISTOR npn

    Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ BFR106 UBB773 transistor t 2180 IC 1496 function L7E transistor 22741 transistor s1p 8115, transistor
    Text: m b b s a T a i □ d e s 2 d d 2 3 T « a p x P hilips S e m i c o n d u c t o r s _P ro d u c ^ p e c ific a tio n - N AnER PHILIPS/DISCRETE b?E D NPN 5 GHz wideband transistor ^ BFR106 PINNING


    OCR Scan
    bbS3T31 BFR106 702 TRANSISTOR npn RF NPN POWER TRANSISTOR C 10-12 GHZ BFR106 UBB773 transistor t 2180 IC 1496 function L7E transistor 22741 transistor s1p 8115, transistor PDF

    si9955

    Abstract: No abstract text available
    Text: SÌ9976DY Vishay Siliconix N-Channel Half-Bridge Driver FEATURES APPLICATIONS • • • • • • • • • • • • • • Single Input for High-Side and Low-Side MOSFETs 20- to 40-V Supply Static dc Operation Cross-Conduction Protected Undervoltage Lockout


    OCR Scan
    9976DY Si9976DY S-60752-Rev. 05-Apr-99 si9955 PDF