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    TRANSISTOR POUT 5W Search Results

    TRANSISTOR POUT 5W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR POUT 5W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sd2931-10w

    Abstract: marking code oz 09-Sep-2004
    Text: SD2931-10 RF power transistor HF/VHF/UHF N-channel power MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures


    Original     		PDF SD2931-10 SD2931-10 SD2931 sd2931-10w marking code oz 09-Sep-2004

    Untitled

    Abstract: No abstract text available
    Text: SD2931-10 RF power transistor HF/VHF/UHF N-channel power MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures


    Original     		PDF SD2931-10 SD2931-10 SD2931 SD2931

    SD2942

    Abstract: RG316-25 marking code r10 surface mount diode Wire wound resistor 5W 200B 700B RG316 SD2932 ST40 SD2942 equivalent
    Text: SD2942 RF power transistor HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push pull ■ POUT = 350W min. with 15 db gain @ 175 MHz ■ Low RDS on Description M244 Epoxy sealed


    Original     		PDF SD2942 SD2942 SD2932. RG316-25 marking code r10 surface mount diode Wire wound resistor 5W 200B 700B RG316 SD2932 ST40 SD2942 equivalent

    Arco 423

    Abstract: choke vk200 sd2931-10w
    Text: SD2931-10 RF power transistor: HF/VHF/UHF N-channel power MOSFETs Datasheet — production data Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower


    Original     		PDF SD2931-10 SD2931-10 SD2931 Arco 423 choke vk200 sd2931-10w

    MS2217

    Abstract: No abstract text available
    Text: MS2217 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS Features • · · · · · 1.2 – 1.4 GHz 28 VOLTS POUT = 30 WATTS GP = 7.4 dB MINIMUM INPUT/OUTPUT MATCHING COMMON BASE CONFIGURATION DESCRIPTION: The MS2217 is a NPN silicon bipolar transistor designed for


    Original     		PDF MS2217 MS2217 1000mS

    mosfet HF amplifier

    Abstract: BLF278 mosfet HF amplifier power amplifier blf278 BLF278 equivalent res HF 10-0130 transistor HF band power amplifier BLF278 mosfet HF applications class-A amplifier RES Ingenium HF10-0130
    Text: HF 10-0130 10W HF Amplifier Designed for HF band, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability • • • • • • • • 0.5 ÷ 32 MHz 24 / 50 Volts Input / Output 50 Ohm Pout : 10 W min


    Original     		PDF BLF278 GR00061 mosfet HF amplifier BLF278 mosfet HF amplifier power amplifier blf278 BLF278 equivalent res HF 10-0130 transistor HF band power amplifier BLF278 mosfet HF applications class-A amplifier RES Ingenium HF10-0130

    BLF278 mosfet HF amplifier

    Abstract: mosfet HF amplifier BLF278 equivalent HF10-0130 power amplifier blf278 hf power transistor mosfet BLF278 res HF 10-0130 transistor transistor cross ref HF band power amplifier
    Text: HF 10-0130 10W HF Amplifier Designed for HF band, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability • • • • • • • • 0.5 ÷ 32 MHz 24 / 50 Volts Input / Output 50 Ohm Pout : 10 W min


    Original     		PDF BLF278 GR00061 BLF278 mosfet HF amplifier mosfet HF amplifier BLF278 equivalent HF10-0130 power amplifier blf278 hf power transistor mosfet res HF 10-0130 transistor transistor cross ref HF band power amplifier

    5W 6.8 ohm k ceramic resistor

    Abstract: 5W 47 ohm J ceramic resistor Variable resistor 10K ohm MARCON NH capacitor FAIR-RITE 2743021447 UT141-25 GRM43-4X7R-104K500 diode L2.70 C22-C23 GRM43-4X7r
    Text: SD2922 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 300W MIN. WITH 12.5 dB GAIN @175 MHz DESCRIPTION The SD2922 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2922 is


    Original     		PDF SD2922 SD2922 5W 6.8 ohm k ceramic resistor 5W 47 ohm J ceramic resistor Variable resistor 10K ohm MARCON NH capacitor FAIR-RITE 2743021447 UT141-25 GRM43-4X7R-104K500 diode L2.70 C22-C23 GRM43-4X7r

    resistor 680 ohm

    Abstract: No abstract text available
    Text: SD2931 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz DESCRIPTION The SD2931 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for


    Original     		PDF SD2931 SD2931 resistor 680 ohm

    5W 6.8 ohm k ceramic resistor

    Abstract: 5W 47 ohm J ceramic resistor Variable resistor 10K ohm MARCON NH capacitor GC812 neosid* 10k mount chip transistor 13W SME63T10RM variable RESISTANCE 1 M OHM resistor 560 ohm
    Text: SD2922  RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 300W MIN. WITH 12.5 dB GAIN @175 MHz DESCRIPTION The SD2922 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2922 is


    Original     		PDF SD2922 SD2922 5W 6.8 ohm k ceramic resistor 5W 47 ohm J ceramic resistor Variable resistor 10K ohm MARCON NH capacitor GC812 neosid* 10k mount chip transistor 13W SME63T10RM variable RESISTANCE 1 M OHM resistor 560 ohm

    Power Transformer EE-19

    Abstract: EE-19 transformer arco 404 SD2931 VK200 resistor 680 ohm 16-100pF
    Text: SD2931 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz DESCRIPTION The SD2931 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for


    Original     		PDF SD2931 SD2931 Power Transformer EE-19 EE-19 transformer arco 404 VK200 resistor 680 ohm 16-100pF

    SD2931

    Abstract: VK200 resistor 680 ohm
    Text: SD2931 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz DESCRIPTION The SD2931 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for


    Original     		PDF SD2931 SD2931 VK200 resistor 680 ohm

    transistor marking code H11S

    Abstract: H11S marking CODE H11S rf transistor mar 8 RA05H9595M RA05H9595M-101 MOSFET Amplifier Module 150 mhz amplifier module 5w
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H9595M RoHS Compliance, 952-954MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H9595M is a 5-watt RF MOSFET Amplifier Module that operate in the 952- to 954-MHz range.


    Original     		PDF RA05H9595M 952-954MHz RA05H9595M 954-MHz transistor marking code H11S H11S marking CODE H11S rf transistor mar 8 RA05H9595M-101 MOSFET Amplifier Module 150 mhz amplifier module 5w

    transistor marking code H11S

    Abstract: H11S RA05H8693M RA05H8693M-101 marking CODE H11S
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H8693M RoHS Compliance,866-928MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H8693M is a 5watt RF MOSFET Amplifier Module that operate in the 866 to 928MHz range. The battery can be connected directly to the drain of the


    Original     		PDF RA05H8693M 866-928MHz RA05H8693M 928MHz transistor marking code H11S H11S RA05H8693M-101 marking CODE H11S

    Untitled

    Abstract: No abstract text available
    Text: TGF3020-SM 5W, 32V, 4 – 6 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Telemetry C-band radar Communications Test instrumentation Wideband amplifiers 5.8GHz ISM Functional Block Diagram Product Features • • • • • •


    Original     		PDF TGF3020-SM TGF3020-SM

    H11S

    Abstract: RA05H8693M RA05H8693M-101 MOSFET Amplifier Module W3015
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H8693M RoHS Compliance,866-928MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H8693M is a 5watt RF MOSFET Amplifier Module that operate in the 866 to 928MHz range. The battery can be connected directly to the drain of the


    Original     		PDF RA05H8693M 866-928MHz RA05H8693M 928MHz H11S RA05H8693M-101 MOSFET Amplifier Module W3015

    H11S

    Abstract: RA05H8693M RA05H8693M-101
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H8693M RoHS Compliance,866-928MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H8693M is a 5watt RF MOSFET Amplifier Module that operate in the 866 to 928MHz range.


    Original     		PDF RA05H8693M 866-928MHz RA05H8693M 928MHz H11S RA05H8693M-101

    f953

    Abstract: H11S RA05H9595M RA05H9595M-101
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H9595M RoHS Compliance, 952-954MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H9595M is a 5-watt RF MOSFET Amplifier Module that operate in the 952- to 954-MHz range.


    Original     		PDF RA05H9595M 952-954MHz RA05H9595M 954-MHz f953 H11S RA05H9595M-101

    H11S

    Abstract: RA05H9595M RA05H9595M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H9595M RoHS Compliance, 952-954MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H9595M is a 5-watt RF MOSFET Amplifier Module that operate in the 952- to 954-MHz range.


    Original     		PDF RA05H9595M 952-954MHz RA05H9595M 954-MHz H11S RA05H9595M-101

    UF2805B

    Abstract: No abstract text available
    Text: UF2805B RF Power MOSFET Transistor 5W, 100-500 MHz, 28V Released; RoHS Compliant 20 Jan 11 Package Outline Features •      N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration


    Original     		PDF UF2805B UF2805B

    UF2805B

    Abstract: 1000 MHz transistor 5W
    Text: UF2805B RF Power MOSFET Transistor 5W, 100-500 MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration


    Original     		PDF UF2805B UF2805B 1000 MHz transistor 5W

    LF2805A

    Abstract: J286
    Text: LF2805A RF Power MOSFET Transistor 5W, 500-1000MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration


    Original     		PDF LF2805A 500-1000MHz, LF2805A J286

    Untitled

    Abstract: No abstract text available
    Text: LF2805A RF Power MOSFET Transistor 5W, 500-1000MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration


    Original     		PDF LF2805A 500-1000MHz,

    MARCON NH capacitor

    Abstract: UT141-25 neosid* 10k UT-141-25 4.7kohm trimmer RG316-25 mount chip transistor 13W diode L2.70 ferrite core shield transformer pin connection vk200 ferrite bead
    Text: SD2922 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . GOLD METALLIZATION . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION . POUT = 300W MIN. WITH 12.5 dB GAIN @175 MHz DESCRIPTION The SD2922 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2922 is


    OCR Scan     		PDF SD2922 SD2922 PCI2170 020876A MARCON NH capacitor UT141-25 neosid* 10k UT-141-25 4.7kohm trimmer RG316-25 mount chip transistor 13W diode L2.70 ferrite core shield transformer pin connection vk200 ferrite bead