transistor p13
Abstract: LDTA114WLT1G marking P13 sot-23 p13 transistor
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA114WLT1G zApplications Inverter, Interface, Driver 3 zFeatures 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
|
Original
|
LDTA114WLT1G
OT-23
transistor p13
LDTA114WLT1G
marking P13 sot-23
p13 transistor
|
PDF
|
2SC5437
Abstract: 2SC5195
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5437 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package 1.4 ± 0.05 (1.4 mm x 0.8 mm × 0.59 mm: TYP.) UNIT
|
Original
|
2SC5437
2SC5437
2SC5195
|
PDF
|
transistor k 3562
Abstract: 2SC5007 2SC5433
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5433 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package 1.4 ± 0.05 (1.4 mm x 0.8 mm × 0.59 mm: TYP.) UNIT
|
Original
|
2SC5433
transistor k 3562
2SC5007
2SC5433
|
PDF
|
2SC5454
Abstract: ic n 3856
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5454 NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE PACKAGE DIMENSIONS in mm • High gain, low noise +0.2 Emitter to Base Voltage VEBO 2 V Collector Current IC 50 mA Total Power Dissipation PT 200 mW
|
Original
|
2SC5454
2SC5454
ic n 3856
|
PDF
|
marking r55
Abstract: K 608 2SC5455 1117 transistor 0340 180
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5455 NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE PACKAGE DIMENSIONS in mm • Ideal for medium-output applications +0.2 +0.2 3 2 1.5 –0.1 Collector to Emitter Voltage VCEO 6 V Emitter to Base Voltage
|
Original
|
2SC5455
marking r55
K 608
2SC5455
1117 transistor 0340 180
|
PDF
|
IC 7443
Abstract: 2SC5432 2SC5006
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5432 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package 1.4 ± 0.05 (1.4 mm x 0.8 mm × 0.59 mm: TYP.) UNIT
|
Original
|
2SC5432
IC 7443
2SC5432
2SC5006
|
PDF
|
9926 transistor
Abstract: 2SC5008 2SC5434
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5434 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package 1.4 ± 0.05 (1.4 mm x 1.8 mm × 0.59 mm: TYP.) UNIT
|
Original
|
2SC5434
9926 transistor
2SC5008
2SC5434
|
PDF
|
2SC5010
Abstract: 2SC5435 V 8623 transistor marking tk 9418 transistor
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package 1.4 ± 0.05 (1.4 mm x 0.8 mm × 0.59 mm: TYP.) UNIT
|
Original
|
2SC5435
2SC5010
2SC5435
V 8623 transistor
marking tk
9418 transistor
|
PDF
|
XC6SLX16-CSG324
Abstract: ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL DS695
Text: XPS Thin Film Transistor TFT Controller (v2.00a) DS695 September 16, 2009 Product Specification 0 0 Introduction LogiCORE Facts The XPS Thin Film Transistor (TFT) controller is a hardware display controller IP core capable of displaying 256k colors. The XPS TFT controller
|
Original
|
DS695
CH-7301
XC6SLX16-CSG324
ch7301 DVI VHDL
DVI VHDL
xilinx ch7301
CHRONTEL 7301 Xilinx
XPS Thin Film Transistor(TFT) Controller
TFT controller
XC4VLX25-FF668-10
a/ch7301 DVI VHDL
|
PDF
|
sf 128 transistor
Abstract: TRANSISTOR SF 128 Triode 8050 marking P53 transistor SC73P2602 ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47
Text: PROGRAMMABLE INFRARED REMOTE TRANSMITTER WITH BUILT-IN TRANSISTOR DESCRIPTION SC73P2602 is SC73 core based programmable remote transmitter 4-bit MCU with infrared transmitting transistor and built-in 2K OTP program memory supporting in-system program (ISP) which can optimize the stock control.
|
Original
|
SC73P2602
SC73P2602
SC73C16
sf 128 transistor
TRANSISTOR SF 128
Triode 8050
marking P53 transistor
ic marking k52
SC73P16
bd 8050 TRANSISTOR
part MARKING k48
marking k47
|
PDF
|
tb 1253 ang
Abstract: 2SC5004 2SC5431 nec 3225
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5431 NPN EPITAXIAL SILICON TRANSISTOR FOR UHF TUNER OSC/MIX FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package 1.4 ± 0.05 (1.4 mm x 0.8 mm × 0.59 mm: TYP.) UNIT Collector to Base Voltage
|
Original
|
2SC5431
15ecial:
tb 1253 ang
2SC5004
2SC5431
nec 3225
|
PDF
|
nec transistor k 4145
Abstract: tb 1253 ang 2SC5004 2SC5431 2SC5431-T1 nec k 4145
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5431 NPN EPITAXIAL SILICON TRANSISTOR FOR UHF TUNER OSC/MIX FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5004 • Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION
|
Original
|
2SC5431
2SC5004
2SC5431-T1
nec transistor k 4145
tb 1253 ang
2SC5004
2SC5431
2SC5431-T1
nec k 4145
|
PDF
|
marking TN
Abstract: transistor c 5083 2SC5186 2SC5436
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package 1.4 ± 0.05 (1.4 mm x 0.8 mm × 0.59 mm: TYP.)
|
Original
|
2SC5436
marking TN
transistor c 5083
2SC5186
2SC5436
|
PDF
|
la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
|
OCR Scan
|
AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-nolse, hlgh-gain amplification applications • N F = 1.1 dB,
|
OCR Scan
|
2SC5508
2SC5508-T2
Rn/50
13865E
J1V0DS00
0DS00
|
PDF
|
transistor marking T79 ghz
Abstract: TT 2076 transistor MARKING T79 "NPN Transistor" transistor T79 ghz
Text: dò l o X , , 1 PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-noise, high-gain amplification applications
|
OCR Scan
|
2SC5508
2SC5508
2SC5508-T2
transistor marking T79 ghz
TT 2076 transistor
MARKING T79 "NPN Transistor"
transistor T79 ghz
|
PDF
|
of 828 Transistor
Abstract: transistor NEC K 946 nec d 588
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE • PACKAGE DIMENSIONS in mm Ultra super mini-mold thin flat package (1.4 mm x 1.8 mm x 0.59 mm: TYP.) • Contains same chip as 2SC5008
|
OCR Scan
|
2SC5008
of 828 Transistor
transistor NEC K 946
nec d 588
|
PDF
|
Untitled
Abstract: No abstract text available
Text: fìjUeJc&gct - / PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current
|
OCR Scan
|
2SC5507
2SC5507
2SC5507-T2
|
PDF
|
SAA 1251
Abstract: SAA 1025 SAA 1059 SAA 0358
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE • PACKAGE DIMENSIONS in mm Ultra super mini-mold thin flat package 1.4 ±0.05 (1.4 mm x 0.8 mm x 0.59 mm: TYP.) • 0.8 i 0.1
|
OCR Scan
|
2SC5006
SAA 1251
SAA 1025
SAA 1059
SAA 0358
|
PDF
|
ST T8 3580
Abstract: ST T8 3560 2SC5436 st zo 607 ce 2826 ic
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR ULTRA SU PER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package (1.4 mm x 0.8 mm x 0.59 mm: T Y P.)
|
OCR Scan
|
2SC5186
ST T8 3580
ST T8 3560
2SC5436
st zo 607
ce 2826 ic
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5434 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm FEATURE • Ultra super mini-mold thin flat package 1.4 ± 0 .0 5 (1.4 mm x 1.8 mm x 0.59 mm: TYP.) •
|
OCR Scan
|
2SC5434
2SC5008
|
PDF
|
em 434
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5432 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm FEATURE • Ultra super m ini-mold thin flat package 1.4 ± 0 .0 5 (1.4 mm x 0.8 mm x 0.59 mm: TYP.) •
|
OCR Scan
|
2SC5432
2SC5006
em 434
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm FEATURE • Ultra super mini-mold thin flat package 1.4 ±0.05 (1.4 mm x 0.8 mm x 0.59 mm: TYP.)
|
OCR Scan
|
2SC5436
2SC5186
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5437 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm FEATURE • Ultra super mini-mold thin flat package 1.4 ±0.05 (1.4 mm x 0.8 mm x 0.59 mm: TYP.) • 0.8 ± 0.1
|
OCR Scan
|
2SC5437
2SC5195
|
PDF
|