2SC5435 Search Results

2SC5435

Abstract: 2SC5437 NEC 2505 nj
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA836TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5437) Q1: Built-in low noise, high-gain transistor

2SC5435

Abstract: 2SC5786 NEC 7815
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA860TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5786) Q1: High-gain transistor

2SC5435

Abstract: 2SC5600 IC 14558 5mA25
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA841TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5600) Q1: Built-in high-gain transistor

Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor

2SC5435

Abstract: 2SC5745 0782 K 2564 nec 2401 831
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA854TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5745) Q1: High gain transistor suited for buffer applications

2SC5010

Abstract: 2SC5435 2SC5435-T1 marking tk
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5010 • Flat-lead 3-pin thin-type ultra super minimold package

9904 120 13843

Abstract: 2SC5435 2SC5800 nec 4308
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor

k 2059 TRANSISTOR

Abstract: UPA850TD 2SC5435 2SC5736 marking VF
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA850TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5736) Q1: High gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz

Contextual Info: PRELIMINARY DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor

2SC5435

Abstract: NESG2107M33 NEC JAPAN IC xf 2 6-pin marking XF UPA867TS
Contextual Info: DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA867TS NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG) FEATURES • 2 different built-in transistors (2SC5435, NESG2107M33) Q1: High gain transistor

8205 6-pin

Abstract: 2SC5435 2SC5786
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA860TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5786) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz

2SC5435

Abstract: 2SC5600 of ic 3915
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA841TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5600) Q1: High gain transistor suited for buffer applications

F 0552

Abstract: PA862T
Contextual Info: NPN SILICON RF TWIN TRANSISTOR PA862TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz

2SC5435

Abstract: 2SC5800
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor

nec japan 7815

Abstract: 2SC5435 2SC5745
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA854TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5745) Q1: High gain transistor suited for buffer applications

417 - 906

Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA841TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Flat-lead 6-pin thin-type ultra super minimold package • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5600)

0443 IC

Abstract: 2SC5435 2SC5745
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA854TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5745) Q1: High gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz

2SC5010

Abstract: 2SC5435 V 8623 transistor marking tk 9418 transistor
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package 1.4 ± 0.05 (1.4 mm x 0.8 mm × 0.59 mm: TYP.) UNIT

Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor

NEC 2987

Abstract: transistor NEC B 617 transistor NEC D 822 P TL 1701 9418 transistor TL 431 0323
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE • PACKAGE DIMENSIONS in mm Ultra super mini-mold thin flat package (1.4 mm x 0.8 mm x 0.59 mm: TYP.) • Contains same chip as 2S C 5010

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm FEATURE • Ultra super mini-mold thin flat package 1.4 ±0.05 (1.4 mm x 0.8 mm x 0.59 mm: TYP.) • 0.8 ± 0.1

2SC5435

Abstract: 2SC5437 nec 2401 7248 5E-25
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA836TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5437) Q1: Low phase distortion, high-gain transistor

2SC5736

Abstract: 2SC5435
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA850TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5736) Q1: High gain transistor

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid