Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR P 112 Search Results

    TRANSISTOR P 112 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR P 112 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR SMD MARKING CODE QR

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE NA MOSFET TRANSISTOR SMD MARKING CODE 11
    Text: DF N2 020 -6 PMC85XP 30 V P-channel MOSFET with pre-biased NPN transistor 15 May 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium


    Original     		PDF PMC85XP DFN2020-6 OT1118) TRANSISTOR SMD MARKING CODE QR MOSFET TRANSISTOR SMD MARKING CODE NA MOSFET TRANSISTOR SMD MARKING CODE 11

    MOSFET TRANSISTOR SMD MARKING CODE 11

    Abstract: P-CHANNEL MOSFET
    Text: 020 -6 PMC85XP DF N2 30 V P-channel MOSFET with pre-biased NPN transistor Rev. 1 — 24 May 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium


    Original     		PDF PMC85XP DFN2020-6 OT1118) MOSFET TRANSISTOR SMD MARKING CODE 11 P-CHANNEL MOSFET

    mcl610

    Abstract: MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601
    Text: 112 O p to iso Wlato rs A* * A, ~ PACKAGE PRODUCT KEY OUTPUT FORMAT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR


    OCR Scan     		PDF MCT210 MCT26 MCT66 MCL600 MCL610 MCT81 MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601

    MCT8 opto

    Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35
    Text: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR


    OCR Scan     		PDF MCT210 MCT26 MCT66 C1255 10TT1. MCT8 opto c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35

    1427H

    Abstract: PA1427H NEC PA1427H IEI-1213 DARLINGTON MANUAL MIL GRADE TRANSISTOR ARRAY MEI-1202 MF-1134 UPA1427 PA1427
    Text: DATA SHEET «PAI427 SILICON TRANSISTOR ARRAY PNP SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE D E S C R IP T IO N P A C K A G E D IM E N S IO N The ¿¿PA1427 is PNP silico n e p ita xial D a rlin g to n P ow er T ra n sisto r


    OCR Scan     		PDF PAI427 uPA1427 1427H PA1427H NEC PA1427H IEI-1213 DARLINGTON MANUAL MIL GRADE TRANSISTOR ARRAY MEI-1202 MF-1134 PA1427

    BFG96

    Abstract: BFG32 MSB037 3H2 philips MBB352
    Text: Product specification Philips Semiconductors 7 ^ 3 / - Z 3 PNP 5 GHz wideband transistor philips SbE D international BFG32 711Dfi2b D04SD3S ETfl • P H I N PINNING D ESCRIPTION 1 P N P transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for application in


    OCR Scan     		PDF BFG32 OT103 BFG96. D04SD3S MSB037 OT103. BFG96 BFG32 3H2 philips MBB352

    BFQ51C

    Abstract: marking code ci SOT173 BFP90A SOT-173 MARKING 0 SOT173
    Text: N AMER PHILIPS/DISCRETE BSE D • ^53^31 GQ17Û73 1 ■ A BFQ51C T -3 I-I7 P-N-P 2 GHz WIDEBAND TRANSISTOR P-N-P transistor in a sub-miniature HERMETICALLY SEALED micro-stripline envelope. It is primarily intended for use in u.h.f. and microwave amplifiers such as aerial amplifiers, radar systems, oscilloscopes,


    OCR Scan     		PDF BFQ51C BFP90A. bb53T31 T-31-17 BFQ51C marking code ci SOT173 BFP90A SOT-173 MARKING 0 SOT173

    transistor smd zG

    Abstract: npn smd zg smd transistor 513 BFG17 BFG17A smd jpS SMD transistor ZG
    Text: „. e . . . • P hilips Sem iconductors DDEM7S1 D5b BIAPX N AUER PHIL I P S / D I S C R E T E P roduct specification L7E D NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a microminiature plastic S O U 43 surface mounting envelope with


    OCR Scan     		PDF BFG17A OT143. transistor smd zG npn smd zg smd transistor 513 BFG17 BFG17A smd jpS SMD transistor ZG

    CMBT3906

    Abstract: No abstract text available
    Text: CMBT3906 SILICON EPITAXIAL TRANSISTOR P -N -P transistor Marking CMBT3906 ; 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1,02_ 0.89 2.00 1.80 0.60 0.40 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF CMBT3906 CMBT3906

    D2C17

    Abstract: BLY92C BLY92 BLY92 transistor sot120 8-32UNC RF POWER TRANSISTOR NPN vhf
    Text: N AMER P H I L I P S / D I S C R E T E bTE T> • ^ 53^31 T 1 3 ■ APX 002*1732 A BLY92C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is guaran­


    OCR Scan     		PDF BLY92C OT-120. 7Z68949 D2C17 BLY92C BLY92 BLY92 transistor sot120 8-32UNC RF POWER TRANSISTOR NPN vhf

    nec 2571

    Abstract: NEC D 553 C nec 2571 4 pin NEC IC D 553 C 3771 nec nec 716 nec 1565 transistor marking T83 ghz
    Text: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance Cre = 0 .3 p F T Y P .


    OCR Scan     		PDF 2SC4957 2SC4957-T1 4957-T2 2SC4957) nec 2571 NEC D 553 C nec 2571 4 pin NEC IC D 553 C 3771 nec nec 716 nec 1565 transistor marking T83 ghz

    Untitled

    Abstract: No abstract text available
    Text: CMBT3906 SILICON EPITAXIAL TRANSISTOR P -N -P transistor M arking CMBT3906 = 2A PACKAGE OUTLIN E DETAILS A LL DIM EN SION S IN mm 3.0 0.14 0.70 0.50 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter


    OCR Scan     		PDF CMBT3906

    BUK417-500AE

    Abstract: BUK417-500B 500ae BUK417-500BE BUK417
    Text: bTE D N AMER P HI LI PS/ DIS CRE TE • bbSBRBl GD3DMS0 T7R * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor ¡n ISOTOP envelope. The device is intended for use in


    OCR Scan     		PDF BUK417-500AE/BE OT227B BUK417 -500AE -500BE BUK417-500AE BUK417-500AE BUK417-500B 500ae BUK417-500BE

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP V 5051 Advance Information The RF Line UHF Linear Power Transistor 50 W — 470 to 860 MHz UHF LINEAR POWER TRANSISTOR . . . sp ecifica lly desig n ed fo r high p o w e r vis io n or sound TV a m p lifie rs o p e ra tin g Class


    OCR Scan     		PDF TPV5051 BD135

    TRANSISTOR GB 558

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •


    OCR Scan     		PDF 2SC5013 2SC5013-T1 2SC5013-T2 TRANSISTOR GB 558

    BT 156 transistor

    Abstract: TRANSISTOR BJ 122 RCA-40637 sf 122 transistor Arnold Magnetics transistor sf 127 RCA-40637A i53b 5659065 rca transistor
    Text: File No. 655 . □uobz/d RF Pow er Tran sisto rs Solid State Divi8ion 40637A Silicon N-P-N Epitaxial Planar Transistor For Frequency-Multiplier Service in Mobile, Marine, and Sonobuoy V H F Transmitters Features: • High transistor dissipation rating P j = 2 W max.


    OCR Scan     		PDF 0637A RCA-40637A 0637A 13-MHz 92CS-20223 BT 156 transistor TRANSISTOR BJ 122 RCA-40637 sf 122 transistor Arnold Magnetics transistor sf 127 i53b 5659065 rca transistor

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5185 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • • PACKAGE DIMENSIONS Low Noise NF = 1.3 dB ty p . @ V ce = 2 V, Ic = 3 mA, f = 2 GHz NF = 1.3 dB ty p


    OCR Scan     		PDF 2SC5185 2SC5185-T1 2SC5185-T2

    BFG96

    Abstract: No abstract text available
    Text: P hilips Sem iconductor; bbS3T31 0031ST2 553 M A P X Product specification BFG96 NPN 5 GHz wideband transistor bit N AUER PHILIPS/5ISCRETE DESCRIPTION » PINNING NPN transistor in a 4-lead dual-emitter plastic SOU 03 envelope. DESCRIPTION PIN It is designed for application in


    OCR Scan     		PDF bbS3T31 0031ST2 BFG96 BFG32. OT103. BFG96

    SOT173

    Abstract: D-045 BFQ66 philips 586 K1HC k 219 transistor
    Text: Philips Semiconductors Product specification / Ÿ NPN 8 GHz wideband transistor P H IL IP S I N T E R N A T I O N A L DESCRIPTION SbE P • BFQ66 711Dfl2b 0 D 4 5 4T 5 3^b ■ P H I N PINNING Small-signal planar epitaxial NPN transistor in hermetically-sealed


    OCR Scan     		PDF BFQ66 OT173X. SOT173 D-045 BFQ66 philips 586 K1HC k 219 transistor

    CMBT3906

    Abstract: No abstract text available
    Text: CMBT3906 SILICON EPITAXIAL TRANSISTOR P -N -P transistor M arking CMBT3906 : 2A P A C K A G E O U TLIN E D ETA ILS ALL D IM EN SIO N S IN m m _3.0_ 2.8 0.14 0.09 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _L02_ 0.60 0.40 0.89


    OCR Scan     		PDF CMBT3906 100nA; CMBT3906

    bfq34 application note

    Abstract: ON4497 BFQ34 sf 122 transistor
    Text: Philips Semiconductors h ^ 5 3 1 3 1 DD3 1 S5 Û G3 Ö • A P X ^ P r o d u c ts p e c ific a t i^ NPN 4 GHz wideband transistor BFQ34 N AriER P H I L I P S / D I S C R E T E fc.'JE » PINNING DESCRIPTION NPN transistor encapsulated in a 4 lead SOT 122A envelope with a


    OCR Scan     		PDF DD31S5Ã BFQ34 OT122A ON4497) bfq34 application note ON4497 BFQ34 sf 122 transistor

    Untitled

    Abstract: No abstract text available
    Text: CMBT3906 SILICON EPITAXIAL TRANSISTOR P -N -P transistor M arking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIM EN SION S IN mm CU4 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 110 hFE ÍT max. max. max. max. max. k-i o ~VcB0 ~VcE0 -V eb O -Ic ptot


    OCR Scan     		PDF CMBT3906 emitter40

    nec 13772

    Abstract: transistor NEC b 882 transistor NEC D 882 p nec d 882 p transistor transistor transistor NEC b 882 p nec 0882 p 2 sem 2107 71/MT 6351 bm 71/71/MT 6351 bm
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5182 NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PAC KAG E DIMENSIONS • Low noise • NF = 1.3 dB ty p . @ Vce = 2 V, Ic = 3 mA, f = 2 GHz • NF = 1.3 dB ty p


    OCR Scan     		PDF 2SC5182 SC-59 2SC5182-T1 2SC5182-T2 nec 13772 transistor NEC b 882 transistor NEC D 882 p nec d 882 p transistor transistor transistor NEC b 882 p nec 0882 p 2 sem 2107 71/MT 6351 bm 71/71/MT 6351 bm

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF