TRANSISTOR P 0225 Search Results

PACKAGE PANASONIC

Abstract: AN90B01S DIP018-P transistor B42 AN90B22 AN90B60
Contextual Info: General Purpose Linear ICs I Transistor Arrays >AN90B00/S Series V çe = 2 4 V , Iç =25m A (Note) Pin numbers in □ show those o f SO Package. Equivalent Circuits AN90B01S : 5 Circuits (SOP016-P-0225) è— -G aa Ä Ä AN90B10 : 8 Circuits (DIP018-P-0300E)

Contextual Info: TO SHIBA TPC8301 TOSHIBA FIELD EFFECT TRANSISTOR T P f SILICON P CHANNEL MOS TYPE L2- tt-MOSVI s i m LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS NOTE BOOK PC ORTABLE MACHINES AND TOOLS Low Drain-Source ON Resistance : Rd S (ON)= 95mO (Typ.) High Forward Transfer Admittance

Contextual Info: TO SH IB A TPC8102 TOSHIBA FIELD EFFECT TRANSISTOR t p t f SILICON P CHANNEL MOS TYPE tt-MOSVI t 1 n ? LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS PORTABLE MACHINES AND TOOLS NOTE BOOK PC • Low Drain-Source ON Resistance : Rj)g (ON) —34m il (Typ.) •

YTA640

Contextual Info: TOSHIBA YTA640 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE zr-MOSV YTA640 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS

MOTOROLA N-Channel MOSFET 3-334

Abstract: 3-336 motorola MTH20N15 YI45M RF1MB Case 197A-02 VDE 0660 AN569 MTM20N15 S150
Contextual Info: MOTOROLA SC IME D I b3b7254 QGôTiQG 4 I XSTRS/R F 7 ~~3 ? - / 3 MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA MTH2 0 N15 MTM2 0 N15 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS T M O S P O W ER F E T s 20 A M P E R E S

Contextual Info: TO SHIBA TPC8302 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL M05 TYPE L2- tt-MOSVI TPf«ift7 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS NOTE BOOK PC PORTABLE MACHINES AND TOOLS 2.5V Gate Drive. Low Drain-Source ON Resistance : R d S (ON)= lOOmO (Typ.)

Contextual Info: TO SH IBA SSM3J02F TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM3J02F POWER MANAGEMENT SWITCH U nit in mm HIGH SPEED SWITCHING APPLICATIONS + 0.5 2.5-0.3 + 0.25 1.5-0.15 Sm all Package Low on Resistance : Ron = 0.5 Cl Max. (@VQg = —4 V)

Contextual Info: TO SHIBA TPC8202 TOSHIBA FIELD EFFECT TRANSISTOR t p t SILICON N CHANNEL MOS TYPE tt-MOSVI f t ? n ? LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS NOTE BOOK PC PORTABLE MACHINES AND TOOLS 2.5V Gate Drive Low Drain-Source ON Resistance : R ü g (ON) —41m n (Typ.)

Contextual Info: TPC8001 TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI T P ffin m LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS PORTABLE MACHINES AND TOOLS NOTE BOOK PC • Low Drain-Source ON Resistance : Rj)g (ON)= 15m£2 (Typ.) • High Forward Transfer Adm ittance: |Yfs| = IIS (Typ.)

Contextual Info: SPRAGUE/SEMICOND 8514019 SPRAGUE. GR OU P T3 D • S E M IC O N D S / IC S flS13flSD D D D 3 S 7 T b ■ 0 3 5 7 9 7 ^ ^ - ¿ S 'V 93D JUNCTION FIELD-EFFECT TRANSISTOR CHIPS_ _ N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

ic 8040

Abstract: MPSH81C D29A4 MPSD52C
Contextual Info: S P R A G U E/ S EM IC O N D \ GROUP 85 14 01 9 SPRAGUE, T3 Ô513050 000357 5 “J • D 93 D 0 3 5 7 5 2 ^ S E M I C O N D S / ICS \ BIPOLAR TRANSISTOR CHIPS PNP Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO Device Type

Contextual Info: TO SHIBA TENTATIVE 2SC5466 <;r * Afift TOSHIBA TRANSISTOR i SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm DYNAMIC FOCUS APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS 10 ì ^ 3.2 ± 0.2 0.3 2 .7 ± H in H X / n i T A f i F A M P I I F I F R APPI I T A T I D N ^

pal 003a

Abstract: powerex CLAMP JS0225A1 JS0230A1 KEE525B0 baker street T39 diode on 614 power transistor PAL 0LL A
Contextual Info: POldEREX INC 7294621 POWEREX TflD D 7 S ci 4 b 2 1 IN C 98D fOHEWCt_ Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 * 0002431 0 2 4 3 1 D 3 ^ KEE525B0 In t e g r a l B ß k ß r C la m p Six-Darlington Transistor Module 8 Amperes/300 Volts

647 transistor

Abstract: TA6206 cascode transistor array
Contextual Info: H A RR IS S E M I C O N D S E C T O R ¡SjHARRIS blE D • 4 3 02 27 1 0 0 4 7 0 H b b46 « H A S 1A1197 Æ U S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features • Gain Bandwidth Product (fT Description .>1GHz

Contextual Info: TOSHIBA TPC8201 T O SH IB A FIELD EFFECT TRANSISTOR SILICON N CH A N N EL M O S TYPE tt-M O SV I T P f » 7 fl 1 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS NOTE B O O K PC PORTABLE M A C H IN E S A N D TOOLS • Low Drain-Source ON Resistance • High Forward Transfer Adm ittance: |Yfs|= 6 S (Typ.)

Contextual Info: Voltage Regulators AN8013SH Single-channel step-up or step-down DC-DC converter control IC Unit: mm • Overview +0.1 0.15–0.05 SSOP010-P-0225 Note The package of this product will be changed to lead-free type SSOP010-P-0225A). See the new package dimensions section later of this

Contextual Info: 19-0225; Rev 1; 7/94 5V /3.3V /3V or Adjustable, High-Efficiency, Low IQ, Step-Down DC-DC Controllers These devices use m iniature external com ponents. Their high switching frequency up to 300kHz allows for less than 9mm diameter surface-mount inductors.

transistor IR 652 P

Abstract: FS Series Miniature Power Film TH Resistor MAX649CSA
Contextual Info: ykiyjxiw i 19-0225; Rev 1; 7/94 , 5 V /3 .3 V /3V or Adjustable High-Efficiency, Low IQ, Step-Down DC-DC Controllers T he se d e v ic e s use m in ia tu re e xte rn a l c o m p o n e n ts . Their high sw itch in g fre q u e n cy up to 300kHz allows for less than 9mm diam eter surface-m ount inductors.

ROE eb capacitor

Contextual Info: 7 ^ 2 3 7 G 0225b 4 T S G S - T H O M S O N ^ 0 g ^ ( s lL iÙ ir [ K M 0 S 30E D S G S-THOMSON 3.5A SWITCHING REGULATOR ADVANCE DATA • ■ ■ ■ ■ ■ ■ ■ . ■ ■ ■ ■ 3.5A OUTPUT CURRENT 5.1 V TO 40V OUTPUT VOLTAGE RANGE 0 TO 90% DUTY CYCLE RANGE

Contextual Info: SynSEMi SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR MMBT5550LT1 TRANSISTOR NPN FEATURES Power dissipation Pcm : 0225 W (Tamb=25 °C) Collector current ICM: 0.6 A Collector base voltage 160 V Operating and storage junction temperature range

Diode LT 9250

Abstract: diode BYW 92 LT 9250 diode lt 0236 5 amp diode byw 92-200 diode BYW 92-200 diodes byw 92 diodes byw diode BYW 19
Contextual Info: S G S- TH OM SO N O STC D 1 7121237 00G2252 BYW 92-50^200, R BYW 92-150 A f (R) T H O M S O N -C S F D M S IO N SEM ICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A H A U T RENDEMENT 59C 02252 HIGH EFFICIENCY

Contextual Info: 19-0225; Rev 3; 9/97 IT K ATION EVALU BLE AVAILA 5 V /3 .3 V /3 V or Adjust a ble , H igh-Effic ie nc y, Low I Q , St e p-Dow n DC-DC Cont rolle rs _Applic a t ions 5V-to-3.3V Green PC Applications High-Efficiency Step-Down Regulation

Motorola TE 2556

Abstract: S9430 TE 2556 MAX649CSA 7411 3 INPUT AND gate 915 DCDC plv nichicon si9430 ic Siliconix mosfet guide dcdc smta resistor
Contextual Info: 19-0225; Rev 3; 9/97 -•ssg T 5 V / 3 . 3 V / 3 V or Adjustable, High-Efficiency, Low IQ, S te p-D ow n DC-DC Controllers T hese d e v ic e s use m in ia tu re e xte rn a l co m p o n e n ts . Their high sw itching freq u e n cy up to 300kHz allows for less than 9mm diam eter surface-m ount inductors.