Untitled
Abstract: No abstract text available
Text: ZX5T949G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 30V PNP transistor offers extrem ely low on state losses m aking it ideal for use in
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ZX5T949G
OT223
OT223
5T949
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Untitled
Abstract: No abstract text available
Text: ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V PNP transistor offers extrem ely low on state losses m aking it ideal for use in DC-DC circuits
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ZXTP2008G
OT223
OT223
TP2008GTA
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Untitled
Abstract: No abstract text available
Text: ZXTP2012G 60V PNP M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -60V : RSAT = 39m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V PNP transistor offers extrem ely low on state losses m aking it ideal for use in DC-DC circuits
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ZXTP2012G
OT223
OT223
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Untitled
Abstract: No abstract text available
Text: ZX5T951G 60V PNP M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -60V : RSAT = 39m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V PNP transistor offers extrem ely low on state losses m aking it ideal for use in
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ZX5T951G
OT223
OT223
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sem 2005 ic equivalent
Abstract: No abstract text available
Text: ZXTP2009Z 40V PNP HIGH GAIN LOW SATURATION M EDIUM POWER TRANSISTOR IN SOT89 SUM M ARY BV CEO = -40V : RSAT = 29m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 40V PNP transistor offers low on state losses m aking it ideal for use in DC-DC circuits, line
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ZXTP2009Z
-60mV
TP2009ZTA
sem 2005 ic equivalent
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Untitled
Abstract: No abstract text available
Text: ZX5T3Z 40V PNP HIGH GAIN LOW SATURATION M EDIUM POWER TRANSISTOR IN SOT89 SUM M ARY BV CEO = -40V : RSAT = 29m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 40V PNP transistor offers low on state losses m aking it ideal for use in DC-DC circuits,
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-60mV
WIDTH161
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Untitled
Abstract: No abstract text available
Text: ZXTP2008Z 30V PNP LOW SATURATION M EDIUM POWER TRANSISTOR IN SOT89 SUM M ARY BV CEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V PNP transistor offers low on state losses m aking it ideal for use in DC-DC circuits, line sw itching and
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ZXTP2008Z
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K105 transistor
Abstract: transistor k105 IGT4E11 IGT4D11 IGT-4E11
Text: IGT4D11,E11 c s r 10 AMPERES 400, 500 VOLTS EQUIV. Rd S ON = 0.27 il Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and
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IGT4D11
K105 transistor
transistor k105
IGT4E11
IGT-4E11
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transistor JE 1090
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of PHP20N06E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies
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PHP20N06E
PHX15N06E
OT186A
transistor JE 1090
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE E5E D ^ 5 3 1 3 1 Q030b7D S PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable
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Q030b7D
BUK637-400A
BUK637-400B
BUK637
-400A
D0S0h74
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Untitled
Abstract: No abstract text available
Text: • P hilips Sem iconductors Data sheet status Product specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfSI/C15. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor
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0023k.
BF998R
lYfSI/C15.
OT143R
bbS3T31
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BUK436-100B
Abstract: BUK436-100A
Text: N AMER PH ILI PS/ DI SCR ET E b*iE D • ^ 53^31 □□3QML0 Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK436-1OOA/B
BUK436
-100A
-100B
125sJ
CJ0304b4
BUK436-100B
BUK436-100A
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lv 5682
Abstract: mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 RD60HUF1 MOSFET, 3077 transistor k 2837
Text: ATTENTION OBSERVE PRECAUTIONS 1'OR HANDLING Revision date: J 2th/M ar.;02 MITSUBISHI RF POW ER MOS FET h le x ro s ta tic SENSITIVE DEVÏCES RD60HUF1 Silicon MOSFET Power Transistor, 520M Hz 60W DESCRIPTION OUTLINE DRAW ING RD60HUF1 is a MOS FET type transistor specifically
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RD60HUF1
RD60HUF1
lv 5682
mar 835 mosfet
MAS 560 ag
TRANSISTOR D 5702
MOSFET, 3077
transistor k 2837
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SE110N
Abstract: A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode
Text: Index Type No. Order Type No. Type Type No. 2SA1186 Type 16 2SC3830 16 2SC3831 16 2SC3832 19 2SC3833 2SA1294 1R 2SC3834 2SA1295 16 2SC3835 16 2SC3851 General Purpose Transistor 19 16 2SC3852 Low VcE(sat)-High hFE Transistor 18 19 2SC3856 16 2SC3857 Transistors for Audio Am plifier (Single Emitter)
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1488
2SA1492
SE110N
A4032
SE130N
SE005N
SE090N
high hfe transistor
FMQG5FM
SLA7022M
SE012
3gu diode
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philips diagram fr 310
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK200-50Y TOPFET high side switch_ _ DESCRIPTION Monolithic temperature and overload protected power switch based on M OSFET technology in a 5 pin plastic envelope, configured
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BUK200-50Y
BUK200-50Y
philips diagram fr 310
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Untitled
Abstract: No abstract text available
Text: • bbS3^31 0Q24b71 52b H A P X N AUER PHILIPS/DISCRETE BF660 b7E » ; v SILICON PLANAR TRANSISTOR P-N-P transistor, in a microminiature plastic envelope; intended for use as oscillator in v.h.f. tuners with extended frequency range and/or in conjunction with M OS-FETs in thick and thin-film circuits.
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0Q24b71
BF660
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BUK436-1000B
Abstract: No abstract text available
Text: N AMER P H I L I P S / D I S C R E T E b'ìE D • ^53*131 D03047S Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode f ield-effect power transistor in a plastic envelope. The device is intended tor use in Switched Mode Power Supplies
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bb53R31
D03047S
BUK436-1000B
BUK436-1000B
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE D • bb53R31 0D3Q47S 34R M A P X Philips Semiconductors Product specmcauon Pow erM OS transistor G E N E R A L D E SC R IP TIO N N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in
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bb53R31
0D3Q47S
BUK436-1000B
bbS3T31
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Transistor Bo 17
Abstract: No abstract text available
Text: Product Specification Philips Sem iconductors PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power M OSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.
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BUK100-50GS
Iisl/Iisl25
Transistor Bo 17
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BUK455-400B
Abstract: T0220AB
Text: N ACIER P H I L I P S / D I S C R E T E b^E D • bhSBTBl 0D3GbS5 3 1 2 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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QQ30tiS5
BUK455-400B
T0220AB
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maximum drain voltage of FET 3N143
Abstract: 3N128 equivalent 3N128 FET 3N143 RCA-3N128 AN-3193 rca an3193 TA2840 "rca application note" RCA Solid State amplifier
Text: G E S OLID STATE 3875081 01 G E SO LID STATE DE § 3 0 7 5 0 0 1 01E 14.984 0014^04 5 Dj Small-Signal M „ _ 3N128, 3N143 Silicon MOS Transistor For Amplifier Mixer & Oscillator Applications in Military &
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00l4cifi4
3N128,
3N143
3N143
3N128
maximum drain voltage of FET 3N143
3N128 equivalent
FET 3N143
RCA-3N128
AN-3193
rca an3193
TA2840
"rca application note"
RCA Solid State amplifier
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TRANSISTOR C 5387
Abstract: C 5387
Text: Ordering num ber:E N 5387 _ FX901 N o.5387 P N P Ep itaxial Plan ar Silicon Transistor N-Channel M O S Silicon F E T Silicon Schottky B a rrie r Diode DC/DC C onverter A pplications F e a tu re s •Composite type w ith a P N P transistor and a 2.5V drive N-channel M O SFE T w ith a built-in low
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FX901
TRANSISTOR C 5387
C 5387
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mosfet ir 840
Abstract: sf200aa20 FCA75BC50 sqd65bb75 FBA75BA50 SF150AA50 FCA50BC50 SF150AA20 250A darlington transistor FBA50BA50
Text: POW ER M OSFET MODULE Switching Time ns R d s (o n ) V d s (o n ) TYPE mO FBA50BA50 FCA50BC50 FBA50BA FBA75BA50 FCA75BC50 SF100AA50 SF150AA50 SF100AA20 SF150AA20 SF200AA20 SF200AA10 SF200AA10 ☆ New DARLINGTON TRANSISTOR le A VcBO V SQD50 35 50 SQD65 65
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FBA50BA50
FCA50BC50
FBA75BA50
FCA75BC50
SF100AA50
SF150AA50
SF100AA20
SF150AA20
SF200AA20
FRS200AA
mosfet ir 840
sqd65bb75
250A darlington transistor
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IC5011
Abstract: 4515V irf530g
Text: Application Note 1 MIC5011 Design Techniques by Mitchell Lee Introduction Power M OSFETs are often preferred over bipolar transistors as high current switches. In static switching applications the MOSFET takes no drive power, where a bipolar transistor requires a large base current. Bipolar transistors also exhibit
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MIC5011
IC5011
4515V
irf530g
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