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    Sharp Microelectronics of the Americas LQ030B7DD01

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    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE E5E D ^ 5 3 1 3 1 Q030b7D S PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable


    OCR Scan     		PDF Q030b7D BUK637-400A BUK637-400B BUK637 -400A D0S0h74