2SD1162
Abstract: Darlington NPN Silicon Diode HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON darlington power transistor
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 400 Min. @IC= 2A ·High Switching Speed ·Low Collector Saturation Voltage APPLICATIONS ·Designed for high voltage, low speed switching industrial
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VCC150V
2SD1162
Darlington NPN Silicon Diode
HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON
darlington power transistor
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ZUMT720
Abstract: ZUMT619 DSA003732
Text: Super323 SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT619 ISSUE 1 - SEPTEMBER 1998 FEATURES * 500mW POWER DISSIPATION * IC CONT 1A * 2A Peak Pulse Current * Excellent HFE Characteristics Up To 2A (pulsed) * Extremely Low Equivalent On Resistance; RCE(sat)
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Super323TM
OT323
ZUMT619
500mW
ZUMT720
100ms
ZUMT720
ZUMT619
DSA003732
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npn switching transistor Ic 100mA
Abstract: ZUMT619 ZUMT720
Text: Super323 SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT619 ISSUE 2 - DECEMBER 2008 FEATURES * 500mW POWER DISSIPATION * IC CONT 1A * 2A Peak Pulse Current * Excellent HFE Characteristics Up To 2A (pulsed) * Extremely Low Equivalent On Resistance; RCE(sat)
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Super323TM
OT323
ZUMT619
500mW
ZUMT720
100ms
npn switching transistor Ic 100mA
ZUMT619
ZUMT720
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NPN transistor 8050d
Abstract: BR 8050 D transistor br 8050 8050c transistor BR 8050 8050c 8050 TRANSISTOR PNP st 8050d BR 8050D 8050 pnp transistor
Text: ST 8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As
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100mA
NPN transistor 8050d
BR 8050 D
transistor br 8050
8050c transistor
BR 8050
8050c
8050 TRANSISTOR PNP
st 8050d
BR 8050D
8050 pnp transistor
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BR 8050 D
Abstract: NPN transistor 8050d BR 8050 transistor 8550 st 8050d transistor br 8050 8050 TRANSISTOR PNP 8050c 8050 pnp transistor 8050d
Text: ST 8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As
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100mA
BR 8050 D
NPN transistor 8050d
BR 8050
transistor 8550
st 8050d
transistor br 8050
8050 TRANSISTOR PNP
8050c
8050 pnp transistor
8050d
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PBSS4240
Abstract: No abstract text available
Text: PBSS4240 40V; 2A NPN Low VCE sat (BISS) Transistor FEATURES ˙Low collector-emitter saturation voltage ˙High current capability ˙Improved device reliability due to reduced heat generation. APPLICATIONS ˙Supply line switching circuits ˙Battery management applications
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PBSS4240
Tamb25OC
100mA,
500mA,
750mA,
200mA
100mA
100mA
100MHz
PBSS4240
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Untitled
Abstract: No abstract text available
Text: PBSS4240 40V; 2A NPN Low VCE sat (BISS) Transistor FEATURES ․Low collector-emitter saturation voltage ․High current capability ․Improved device reliability due to reduced heat generation. APPLICATIONS ․Supply line switching circuits ․Battery management applications
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PBSS4240
Tamb25OC
100mA,
500mA,
750mA,
200mA
100mA
100mA
100MHz
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MMBT8050
Abstract: MMBT8050 BR mmbt8050 sot-23
Text: MMBT8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups C and D according to its DC current gain. SOT-23 Plastic Package
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MMBT8050
OT-23
MMBT8050
MMBT8050 BR
mmbt8050 sot-23
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN3880 NPN Epitaxial Planar Silicon Transistor 2SC4737 50V/2A Driver Applications Applications Package Dimensions • Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers . unit:mm 2084B [2SC4737] Features
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EN3880
2SC4737
2084B
2SC4737]
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Untitled
Abstract: No abstract text available
Text: ST PBSS4240 40V; 2A NPN Low VCE sat (BISS) Transistor FEATURES ˙Low collector-emitter saturation voltage ˙High current capability ˙Improved device reliability due to reduced heat generation. APPLICATIONS ˙Supply line switching circuits ˙Battery management applications
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PBSS4240
Tamb25-
100mA,
500mA,
750mA,
200mA;
100mA;
100mA
100MHz
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Untitled
Abstract: No abstract text available
Text: ST PBSS4240 40V; 2A NPN Low VCE sat (BISS) Transistor FEATURES ˙Low collector-emitter saturation voltage ˙High current capability ˙Improved device reliability due to reduced heat generation. APPLICATIONS ˙Supply line switching circuits ˙Battery management applications
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PBSS4240
Tamb25
100mA,
500mA,
750mA,
200mA;
100mA;
100mA
100MHz
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2SC4737
Abstract: ITR07514 ITR07515 ITR07516 ITR07517
Text: Ordering number:ENN3880A NPN Epitaxial Planar Silicon Transistor 2SC4737 50V/2A Driver Applications Applications Package Dimensions • Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers . unit:mm 2084B [2SC4737] Features
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ENN3880A
2SC4737
2084B
2SC4737]
2SC4737
ITR07514
ITR07515
ITR07516
ITR07517
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Untitled
Abstract: No abstract text available
Text: STC4250L NPN Silicon Transistor PIN Connection Applications • Power amplifier application • High current switching application Features • High current : IC=2A • Complementary pair with STA3250L TO -92L 1: Emitter 2 :Collector 3: Base Ordering Information
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STC4250L
STA3250L
STC4250
O-92L
KSD-T0D013-000
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STA3250
Abstract: SMD iC MARKING code 1A marking 1A SOT-89 STA325 STA3250F
Text: STC4250F Semiconductor NPN Silicon Transistor Applications • Power amplifier application • High current switching application Features • • • • Low saturation voltage: VCE sat =0.15V Typ. @ IC=1A, IB=50mA Large collector current capacity: IC=2A
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STC4250F
STA3250F
STC4250F
OT-89
KSD-T5B007-001
STA3250
SMD iC MARKING code 1A
marking 1A SOT-89
STA325
STA3250F
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2SCR542P
Abstract: T100
Text: Midium Power Transistors 30V / 5A 2SCR542P Structure NPN Silicon epitaxial planar transistor Dimensions (Unit : mm) Features 1) Low saturation voltage, typically VCE (sat) = 0.4V (Max.) (IC / IB= 2A / 100mA) (1) 2) High speed switching Applications
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2SCR542P
100mA)
R0039A
2SCR542P
T100
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2SCR512
Abstract: 2SCR512P T100
Text: Midium Power Transistors 30V / 2A 2SCR512P Structure NPN Silicon epitaxial planar transistor Dimensions (Unit : mm) Features 1) Low saturation voltage, typically VCE (sat) = 0.4V (Max.) (IC / IB= 700mA / 35mA) (1) 2) High speed switching Applications
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2SCR512P
700mA
R0039A
2SCR512
2SCR512P
T100
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T100
Abstract: 2SCR553P
Text: Midium Power Transistors 50V / 2A 2SCR553P Structure NPN Silicon epitaxial planar transistor Dimensions (Unit : mm) Features 1) Low saturation voltage, typically VCE (sat) = 0.13V (Max.) (IC / IB= 700mA / 35mA) (1) 2) High speed switching Applications
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2SCR553P
700mA
R0039A
T100
2SCR553P
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2N6036
Abstract: 2N6039 NPN VCBO 80V
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector–Emitter Sustaining Voltage: VCEO SUS = 80V(Min) ·High DC Current Gain: hFE = 750(Min)@IC= 2A ·Complement to Type 2N6036 APPLICATIONS ·Designed for general purpose switching and amplifier
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2N6036
2N6036
2N6039
NPN VCBO 80V
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ZTX449
Abstract: No abstract text available
Text: PNP Silicon Planar Medium Power Transistor ZTX549 FEATURES • 1W power dissipation at Tsmb = 2 5 °C • 2A peak pulse current • Excellent gain characteristics up to 2A pulsed • Low saturation voltages • Fast switching • NPN complementary type available
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ZTX549
ZTX449
300/is.
ZTX449
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zener Diode B21
Abstract: No abstract text available
Text: Ordering number:ENN3880A NPN Epitaxial Planar Silicon Transistor 2SC4737 50V/2A Driver Applications Applications Package Dimensions • Suitable for use in switching o f L load motor unit:mm drivers, printer hammer drivers, relay drivers . 2084B Features
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ENN3880A
2SC4737
2084B
zener Diode B21
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Untitled
Abstract: No abstract text available
Text: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS TO -220 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector-Base Voltage : BUT 12 : BUT12A Collector Emitter Voltage : BUT12 : BUT 1 2A Collector Current (DC) Collector Current (Pulse)
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BUT12/12A
BUT12A
BUT12
100mA,
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2SA1296
Abstract: 2SC3266
Text: TO SH IBA 2SC3266 TOSHIBA TRANSISTOR POWER AMPLIFER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3266 Unit in mm POWER SWITCHING APPLICATIONS • • . 5.1 MAX. Low Saturation Voltage : Vq ^ (sat) = 0.5V (Max.) (l£ = 2A) Complementary to 2SA1296
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2SC3266
2SA1296
SC-43
2SA1296
2SC3266
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2SC5172
Abstract: No abstract text available
Text: TO SHIBA 2SC5172 2 S C 5 1 72 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS 10 ±0.3 Excellent Switching Times : tr = 0.5/^s (Max.), tf=0.3^s (Max.) at l£ = 2A High Collector Breakdown Voltage : V0 e o = 4OOV
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2SC5172
10//s*
100//S
r-10ms
2SC5172
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2SC4737
Abstract: No abstract text available
Text: Ordering number:EN 3880 No.3880 2SC4737 NPN Epitaxial Planar Silicon Transistor I 50V/2A Driver Applications Applications . Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers . F eatures . High DC current gain. • WideASO.
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2SC4737
2SC4737
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