TRANSISTOR NA 44 Search Results

Contextual Info: ., U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLV38 VHP LINEAR PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar epitaxial transistor primarily intended for use in linear VHF television

4NA80FI

Abstract: 4na80
Contextual Info: £jï 4 80 4 80 SGS-THOMSON ULKgraMOeS STP NA STP NA FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E V STP4NA80 STP4NA80FI • . . . . . . dss 800 V 800 V RDS on Id <3 0 < 3 0. 4 A 2.5 A TYPICAL RDS(on) = 2 .4 £2 ± 30V GATE TO SOURCE VOLTAGE RATING

ADL5310

Abstract: AD8304 AD8305 ADL5306 IRF110 ADL5310ACP
Contextual Info: 120 dB Range 3 nA to 3 mA Dual Logarithmic Converter ADL5310 FUNCTIONAL BLOCK DIAGRAM FEATURES 665kΩ OUT1 The ADL5310 employs an optimized translinear structure that utilizes the accurate logarithmic relationship between a bipolar transistor’s base-emitter voltage and collector current, with

TPC87

Abstract: TK115* toko TK 19 436 TPC96
Contextual Info: [¿¡TOKO TK115XX VOLTAGE REGULATOR WITH ON/OFF SWITCH FEATURES APPLICATIONS • Low Dropout Voltage ■ Pass Transistor Terminals Available ■ Very Low Standby Current ON, No Load ■ Very Low (<200 nA) Current in OFF Mode ■ Low Output Noise ■ Internal Thermal Shutdown

TRANSISTOR R57

Abstract: 2SC5754 CQ 419 ne664 DCS1800 GSM1800 NE5520379A NE663M04 NE664M04 NE664M04-T2-A
Contextual Info: NEC's MEDIUM POWER NPN NE664M04 SILICON HIGH FRQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH: fT = 20 GHz ICBO PARAMETERS AND CONDITIONS TYP MAX 1000 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 nA 1000 hFE DC Current1 Gain at VCE = 3 V, IC = 100 mA

image processing free

Contextual Info: For Communications Equipment MN86074 Image Processing LSI Overview transistor FET An external resistor determines the follow-up range. M Di ain sc te on na tin nc ue e/ d The MN86074 boosts image quality by applying various image processing techniques to the analog signal from

MA10

Abstract: MA11 MA12 MA13 MN86074 QFH084-P-1212 QFH084-P-1212A FSP 30
Contextual Info: For Communications Equipment MN86074 Image Processing LSI Overview transistor FET M Di ain sc te on na tin nc ue e/ d The MN86074 boosts image quality by applying various image processing techniques to the analog signal from an image sensor. Features include correction of laser

Contextual Info: , U na. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UHF linear push-pull power transistor FEATURES BLV859 PINNING SOT262B • Double internal input and output matching for an optimum wideband capability and high gain

Contextual Info: For Communications Equipment MN86074 Image Processing LSI Overview transistor FET An external resistor determines the follow-up range. M Di ain sc te on na tin nc ue e/ d The MN86074 boosts image quality by applying various image processing techniques to the analog signal from

K1153

Contextual Info: fSTOKO TK115XX VOLTAGE REGULATOR WITH ON/OFF SWITCH FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Low Dropout Voltage Pass Transistor Terminals Available Very Low Standby Current ON, No Load Very Low (<200 nA) Current in OFF Mode

BLV80-28

Abstract: TRANSISTOR D 471 transistor s72 S72 transistor 15 w RF POWER TRANSISTOR NPN
Contextual Info: bSE T> 7 11 002 b GübETiö 734 M P H I N B L V 8 0 /2 8 PHILIPS INTERNA TIO NA L V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in base stations in the v.h.f. mobile radio band. Features: • multi-base structure and diffused em itter ballasting resistors fo r an optim um temperature profile;

NDS8410

Contextual Info: M ay 19 96 Na t i o n a l Semiconductor" N D S 8 41 0 Single N-Channel Enhancem ent M ode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

transistor 2N 2222 h 331

Abstract: transistor marking wv4 GI 312 diode NBX 2102 marking 1Nco 2N5926 JANTX rial mci TRANSISTOR wv4
Contextual Info: I INCH-PQUKITT M IL-S-l9500/447A ER 10 J u n e 1991 ctiDrDcrntkir u * nu MIL-S-19500/447(ER) 19 February 1971 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, MPN, SILICON, POWER, T V O r I ITL 9 1 I C Û O C , u1nA nM IT Va nA Mn uf\ ul An Un Ti Va Vi

NDB7060

Abstract: NDP7060
Contextual Info: Na t io n a l Semiconductor" June 1996 NDP7060/ NDB7060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancem ent m ode p o w e r field effect tran sisto rs are produced using National's pro p rie ta ry, high cell density, DMOS technology.

mje 3003

Abstract: mje 1303 transistor Bf 444 369-42 BFT25A 433-2 npn sot23 1303 DDE537A transistor SOT23 4d Philips FA 291
Contextual Info: Philips Semiconductors b b 5 3 ci 3 1 N AMER DDE5 3 bb 003 ^lA PX P H ILIP S /D IS C R E TE Product specification b7 E NPN 5 GHz wideband transistor FEATURES • c BFT25A PINNING Low current consumption 100 nA - 1 mA • Low noise figure • Gold metallization ensures

GTL2002

Abstract: GTL2010 GTL2000DL-T D3S46 AN10145 GTL2000DGG GTL2000 GTL2000DL GTL2002D GTL2002DP-T
Contextual Info: GTL2000/GTL2002/ GTL2010 1 48 GREF SREF 2 47 DREF S1 3 46 D1 S2 4 45 D2 S3 5 44 D3 S4 6 43 D4 S5 7 42 D5 S6 8 41 D6 S7 9 40 D7 S8 10 39 D8 S9 11 38 D9 37 D10 S10 12 S11 13 S12 14 GTL2000 GND 36 D11 35 D12 D13 S13 15 34 S14 16 33 D14 S15 17 32 D15 S16 18 31

ic 805

Abstract: V 904 RL 805 876A ISTS904 871A transistor 824A
Contextual Info: Optical Switches, Single Transistor Output Shortform Hutton Close, Crowther Ind Est, Dist 3, Washington, Tyne & Wear NE38 0AH, England Email: isocom@dial.pipex.com - Tel: +44 0191 4166546 - Fax: +44 0191 4155055 Optical Switches Optocouplers Catalogue Home Page

te 804

Contextual Info: Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England mailto:sales@isocom.uk.com - Tel: +44 0 191 4166546 - Fax: +44 (0)191 4155055 Optical Switches Optocouplers Catalogue Home Page H21A1-A2 200 870A 871A 875A 876A 813S3 813S5 813S7 822A1-A2 100

H05 SOT23 5

Abstract: A1557 TRANSISTOR SOT23, Vbe 8V ES SC74 P6.064 Package transistor pnp 3015 HFA3134 HFA3134IH96 HFA3135 HFA3135IH96
Contextual Info: HFA3134, HFA3135 TM Data Sheet February 1998 Ultra High Frequency Matched Pair Transistors File Number 4445 Features • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . .8.5GHz The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation’s

transistor 2N4401

Abstract: 2n4401 die
Contextual Info: Die no. C-31 NPN medium power transistor Dimensions Units : mm These epitaxial planar NPN silicon transistors are gold doped. TO-92 Features • available in TO-92 package; for packaging information, see page 448 • collector-to-emitter breakdown voltage, BVceo = 40 V (min) at

TRANSISTOR SOT23, Vbe 8V

Abstract: TRANSISTOR 1P SOT23 NPN pnp MATCHED PAIRS PNP 5GHz transistor pnp 3015 HFA3134 HFA3134IH96 HFA3135 HFA3135IH96 H05 SOT23 5
Contextual Info: HFA3134, HFA3135 Data Sheet February 1998 Ultra High Frequency Matched Pair Transistors File Number 4445 Features • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . .8.5GHz The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation’s

TRANSISTOR a31

Contextual Info: PNP medium power transistor Die no. A-31 Dimensions Units : mm These epitaxial planar PNP silicon transistors are gold doped. Features • available in TO-92 package; for packaging information, see page 448 • collector-to-emitter breakdown voltage, BVCeo = 40 V (min) at 1.0 mA

4n25

Abstract: 4N25 pin 4N25 isocom 4N28 4n26 4N25/4N26/
Contextual Info: 4N25, 4N26, 4N27, 4N28: Optocouplers 6 Pin Transistor Base-Connected Datasheet Page 1 of 3 Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England Email: enquiry@isocomoptocouplers.com - Tel: +44 (0)191 4166546 - Fax: +44 (0)191 4155055

4n25

Abstract: 4n28 4N25 pin
Contextual Info: 4N25, 4N26, 4N27, 4N28: Optocouplers 6 Pin Transistor Base-Connected Datasheet Hutton Close, Crowther Ind Est, Dist 3, Washington, Tyne & Wear NE38 0AH, England Email: isocom@dial.pipex.com - Tel: +44 0191 4166546 - Fax: +44 0191 4155055 4N25, 4N26, 4N27, 4N28