3055l104
Abstract: AN569 NTD3055L104 NTD3055L104T4 3055L
Text: NTD3055L104 Power MOSFET 12 Amps, 60 Volts, Logic Level N–Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Features • • • • •
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NTD3055L104
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NTD3055L104/D
3055l104
AN569
NTD3055L104
NTD3055L104T4
3055L
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30550
Abstract: AN569 NTD3055 NTD3055-094
Text: NTD3055-094 Power MOSFET 12 Amps, 60 Volts N–Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Features • • • • • 12 AMPERES 60 VOLTS
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NTD3055-094
r14525
NTD3055
094/D
30550
AN569
NTD3055-094
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E3P102
Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001 SCILLC, 2001 Previous Edition 1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.
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DL135/D
Apr-2001
r14525
DLD601
E3P102
T2-955V
e6n02
t9n10e
DL135
1086v
l1n06c
24 v DC relay 34.51.7
d3n03
20n06hl
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3055V
Abstract: MTD3055VT4 MTD3055V 369D AN569
Text: MTD3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power
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MTD3055V
MTD3055V/D
3055V
MTD3055VT4
MTD3055V
369D
AN569
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MTD3055V
Abstract: mosfet DPAK
Text: MTD3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power
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MTD3055V
MTD3055V/D
MTD3055V
mosfet DPAK
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3055VL
Abstract: MTD3055VLT4 MTD3055VL
Text: MTD3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts N−Channel DPAK−3 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power
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MTD3055VL
MTD3055VL/D
3055VL
MTD3055VLT4
MTD3055VL
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3055vl
Abstract: MTD3055VLT4 MTD3055VL
Text: MTD3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts N−Channel DPAK−3 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power
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MTD3055VL
MTD3055VL/D
3055vl
MTD3055VLT4
MTD3055VL
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mosfet L 3055 motorola
Abstract: L 3055 motorola mosfet L 3055 motorola 3055 3055 sot-223 2N3904 AN569 MMFT3055E MMFT3055ET1 MMFT3055ET3
Text: MOTOROLA Order this document by MMFT3055E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT3055E Motorola Preferred Device SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET
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MMFT3055E/D
MMFT3055E
MMFT3055E/D*
mosfet L 3055 motorola
L 3055 motorola
mosfet L 3055
motorola 3055
3055 sot-223
2N3904
AN569
MMFT3055E
MMFT3055ET1
MMFT3055ET3
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transistor Amp 3055L
Abstract: 3055L 3055L transistor marking 3055l amp 3055l motorola an569 thermal MMFT3055EL MOTOROLA TRANSISTOR T2 2N3904 AN569
Text: MOTOROLA Order this document by MMFT3055EL/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT3055EL Motorola Preferred Device SOT–223 for Surface Mount MEDIUM POWER LOGIC LEVEL TMOS FET
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MMFT3055EL/D
MMFT3055EL
MMFT3055EL/D*
transistor Amp 3055L
3055L
3055L transistor
marking 3055l
amp 3055l
motorola an569 thermal
MMFT3055EL
MOTOROLA TRANSISTOR T2
2N3904
AN569
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t3055vl
Abstract: T30-55VL 3055vl MTD3055VL1 3055V AN569 MTD3055VL MTD3055VLT4
Text: MTD3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power
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MTD3055VL
r14525
MTD3055VL/D
t3055vl
T30-55VL
3055vl
MTD3055VL1
3055V
AN569
MTD3055VL
MTD3055VLT4
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3055V
Abstract: paste AN569 MTD3055V MTD3055V1 MTD3055VT4 t3055v
Text: MTD3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power
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MTD3055V
r14525
MTD3055V/D
3055V
paste
AN569
MTD3055V
MTD3055V1
MTD3055VT4
t3055v
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DA 2688
Abstract: transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688
Text: TEXAS r ÌNSTR 8961726 TEXAS IN STR 62C OPTO 37004 TIP3055 N-P-N SILICON POWER TRANSISTOR T - 3 3 DECEMBER 1970 - REVISED OCTOBER 1884 Designed for Complementary Use with TIP2955 9 0 W at 2 5 ° C C ase T emperature 15 A Continuous Collector Current Plastic-Case Version of 2N 3055
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TIP3055
TIP2955
T0-218AA
7S265
DA 2688
transistor DA 2688
LT 5265
transistor mj 3055
c2688
C-2688
equivalent transistor TIP3055
c2688 L
c2688 transistor
tRANSISTOR c2688
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transistor mj 3055
Abstract: d2955 transistor Amp 3055 Motorola transistors MJE3055 TO 127 mje3055 127 case data Motorola transistors MJE3055 Motorola transistors MJE2955 transistor 30 j 127 L 3055 motorola mje2955 data
Text: MOTOROLA Order this document by MJ D2955/D SEMICONDUCTOR TECHNICAL DATA PNP M JD 2955 Com plem entary Power Transistors NPN M JD 3055 DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • • •
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D2955/D
MJE2955
MJE3055
transistor mj 3055
d2955
transistor Amp 3055
Motorola transistors MJE3055 TO 127
mje3055 127 case data
Motorola transistors MJE3055
Motorola transistors MJE2955
transistor 30 j 127
L 3055 motorola
mje2955 data
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3055e mos
Abstract: TK3055E STK3055E 3055E stk3055 3055EN TK3055
Text: SGS-THOMSON ir a u » K S S TK 3055E N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Voss R D S o n Id S TK3055E 60 V 0 .1 5 £1 13 A , „ „ , , , AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE
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3055E
TK3055E
OT-82
OT-194
STK3055E.
STK3055E
3055e mos
STK3055E
stk3055
3055EN
TK3055
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mosfet L 3055 motorola
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Pow er Field E ffect ransistor N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount Motorola Preferred Device MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS RDS on = 0.15 OHM This advanced E-FET is a TMOS Medium Power MOSFET
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OT-223
MMFT3055E
mosfet L 3055 motorola
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3055VL
Abstract: n tmos transistor motorola t223
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M M FT3055VL TMOS V SO T-223 for Surface Mount TM O S V N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 1.5 AMPERES 60 VOLTS RDS on = 0.140 OHM TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This
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T-223
3055VL
n tmos
transistor motorola t223
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3055vl
Abstract: Motorola 3055vl 3055vl motorola
Text: MOTOROLA Order this document by MTD3055VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD 3055VL TMOS V Power Field Effect Transistor DPAK for S urface Mount N-Channel Enhancement-Mode Silicon Gate T M O S V is a new te ch n o lo g y d e sig ned to achieve an o n -re s is tan ce area pro du ct ab ou t o n e -h a lf tha t of stan dard M O SFETs. This
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MTD3055VL/D
3055VL
3055vl
Motorola 3055vl
3055vl motorola
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BD512 mosfet
Abstract: itt transistoren Relais ITT halbleiterwerk transistor 2N 3055 ITT Intermetall Leuchtdiode CQY 40 transistor BD 522 schaltregler BD512
Text: VMOS Transistoren Eigenschaften und Schaltungsbeispiele 6240-09-2 D INTERMETALL Halbleiterwerk der Deutsche ITT Industries GmbH VMOS-Transistoren Eigenschaften und Schaltungsbeispiele Zusammengestellt von folgenden Mitarbeitern der ITT Semiconductors Gruppe
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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MOTOROLA 3055V
Abstract: 3055VL 3055V
Text: MOTOROLA Order this document by MTD3055VL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD3055VL TMOS V Power Field Effect Transistor DPAK for Surface Mount Motorola Preferred Device TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.18 OHM N-Channel Enhancement-Mode Silicon Gate
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MTD3055VL/D
MOTOROLA 3055V
3055VL
3055V
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3055E
Abstract: D3055 atech
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA Designer's Data Sheet M TD 3055E T M O S IV N-C hannel E nhancem ent-M ode Pow er Field E ffect Transistor DPAK fo r Surface or Insertion M ount TM O S POWER FET 8 AMPERES This advanced " E " series o f TM O S p o w e r MOSFETs is
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3055E
Y145M.
D3055
atech
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marking 3055l
Abstract: MMFT3055ELT1 amp 3055l 3055L
Text: Order this data sheet by MMFT3055ELT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancem ent Mode Silicon G ate TMOS E-FET SOT-223 for Surface Mount MMFT3055ELT1 Motorola Preferred Device This advanced E-FET is a TMOS power MOSFET designed to
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MMFT3055ELT1/D
OT-223
MMFT3055ELT1
318E-01
318E-04.
318E-04
O-261AA
OT-223
marking 3055l
MMFT3055ELT1
amp 3055l
3055L
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4614 mosfet
Abstract: MOTOROLA 3055V 3055VL
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD3055VL TM O S V P o w er Field E ffe c t T ran sisto r DPAK fo r S u rfa ce M ount TMOS POWER FET 12 AMPERES 60 VOLTS R DS on = 0-18 OHM N-Channel Enhancement-Mode Silicon Gate T M O S V is a new te c h n o lo g y d e sig n e d to a ch ie ve an o n -re s is ta n ce a rea p ro d u ct a bo u t o n e -h a lf th a t of sta n d a rd M O S FE Ts. This
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0E-03
0E-02
0E-01
4614 mosfet
MOTOROLA 3055V
3055VL
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HBF4727A
Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product
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