ATECH Search Results

TDA 7277

Abstract: TDA 8345 TDA 7988 tda 9580 TDA 8344 TDA 9394 TDA 8659 AN tda 8945 j tda 7840 ic tda 9361
Contextual Info: Tem ic S e m i c o n d u c t o r s Addresses Europe France T E M IC F rance L es Q u a d ra n ts 3. av en u e du centre B.P. 309 7 8 0 5 4 S t.-Q u e n tin -e n -Y v e lin e s C ed ex Tel: 33 1 3 0 6 0 7 0 0 0 Fax: 33 1 3 0 6 0 7111 Germany T E M IC T E L E F U N K E N

atech

Abstract: Atech Technology 2794B ATS-428
Contextual Info: 3. 3 10 LINE 7 SIDE 9 : 1 - - CHIP SIDE -4 -2 - ELECTRICAL CHARACTERISTICS : M ee t IE C 9 5 0 /U L 1 9 5 0 ,3 6 1 4 8 COMPATIBLE 1. PIN 1 - 4 = PIN 2 - 5 = 0 .1 8 OHM MAX. PIN 1 0 - 7 = PIN 9 - 6 = 0 .7 7 4 OHM MAX. 2. INDUCTANCE (@ 10 KHZ , 0.1 V rm s ):

C28H

Abstract: ATS-255 atech ATS-255L Atech Technology
Contextual Info: - i- 6*00 DHM LINE 2 9 4 DHM D E V IC E = = 15nF - <i-□PTIMUM CLASS <B 600 DHM MATCH ELECTRICAL C HA RA CTE RI ST ICS : (FDR 56K b p s MDDEM , LOW PROFILE) 1, D.C.R. ! PIN 1-3 = 187 DHM+/-10X PIN 4 - 6 = 119 DHM+/-10X 2, INDUCTANCE (025OHZ, l V r n s , P A R A LL E L ) i PIN 1-3 = 22H MIN, <28H TYP,;

0X8007

Abstract: SERCON816 0xF005 BK7500 SERCOS Reference Manual Z1003 Z1100 ZB7501 MstEarlyErrorCnt 0x8009
Contextual Info: Dokumentation zu den SERCOS interface PCI-Karten FC7501 und FC7502 Version: 1.0 Datum: 08.10.2002 Vorwort Inhaltsverzeichnis FC750x - PCI-Karten für SERCOS 1. Vorwort Hinweise zum Handbuch 4 Sicherheitshinweise 5 2. Produktübersicht 6 Systembeschreibung

Katalog tesla tranzistor

Abstract: KF520 KF173 Tesla katalog KF630D KF521 ku611 KD502 KF517A kf517
Contextual Info: kremikovych tranzistoru TESLA ROZNOV K O N S T R U K C N Í K A T A L O G P O LO VO D I C O V Ÿ C H S O U C A S T E K l E I U SVAZEK C E x p o r t EX PO R T IM P O R T KOVO PRA H A C Z E C H O SL O V A K IA : OS 8 Jankovcova 2 170 88 P R A H A 7 CZECHOSLOVAKIA

T2D 77 zener diode

Contextual Info: rruum Final Electrical Specifications _ LTC 1629 PoiyPhase, High E fficiency, Synchronous S tep-D ow n S w itching R e gu lator TECHNOLOGY A u gu st 1999 FCRTURCS DCSCRIPTIOn • Dual Controller Operates from One to Twelve Phases ■ Reduces Required Input Capacitance and Power

clcc

Contextual Info: i^ngEs FRX130D, FRX130R, FRX130H Radiation Hardened N-Channel Power MOSFETs April 1998 Features Description • 6A, 100V, ros ON = 0.180i2 The Harris S em iconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancem ent types with

atech

Abstract: 10KHZ ATS-428C
Contextual Info: •DDT PIN#1 - — 13,2 MAX — - — 13,5 M A X — - 13,0 MAX q ? k |— — 17,50 M A X ^ ^ J 1 :no~nnDn:. ELECTRICAL 1, DCR : PIN Oœ E 6 -9 CHARACTERI STICS = 10-7 = 0,433 : OHM ± 10X PIN 5 - 2 = 4-1 = 0,126 DHM ± 10% 2, IN DUCTANCE ^lOKHZ, O .lV rm s, 7 - 9 SHORT : 10-6 = 800uH ± 5%

Atech Technology

Abstract: 1034AH atech ATS-329A
Contextual Info: 20,60 22 uF 600 OHM LIN E E L E C T R IC A L 1. 2. 3. 4. 5. 6. 7. 8. 9. C H A R A C T E R IS T IC S : FDR 1034AH V,9 0 ,M E E T IE C 950 D.C.R. : PIN 1-2 = 135 OHM MAX. PIN 3 - 4 = 160 OHM MAX. INDUCTANCE (SIKHZ, I V r n s LP) : PIN 1-2 = 2.5Hy MIN. INSERTION LESS <@ 1KHZ, OdBn) PIN 1-2 = 3,0 dB MAX,

AX651

Abstract: I9430 max651
Contextual Info: AI/JXIAI 5 V / 3 . 3 V / 3 V or A d j u s t a b l e , H i g h - E f f i c i e n c y , L o w IQ, S t e p - D o w n DC-DC C o n t r o l l e r s T hese d e v ic e s use m in ia tu re e xte rn a l co m p o n e n ts . Their high sw itching freq u e n cy up to 300kHz allows

Contextual Info: h a r r ,« FRX130D, FRX130R, FRX130H S E M I C O N D U C T O R Radiation Hardened N-Channel Power MOSFETs December 1997 Features Description • 6A, 100V, ros ON = 0.180i2 The Harris S em iconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of

Contextual Info: H a rris 2N7285D, 2N7285R SEMICONDUCTOR 2 REGISTRATION PENDING Currently Available as FRM240 D, R, H November 1994 t^ 7 2 Ô 5 H R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 16A, 200V, RDS(on) = 0 .2 4 Q TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

IC 7377 pin diagram

Abstract: mp 1060 ceramic filter ffe
Contextual Info: 19-1217; Rev 0; 4/97 V M ilX I A I R e g u l a t e d 3 . 3 V Ch a r g e P u mp The MAX679 step-up, regulated charge pum p gener­ ates a 3.3V ±4 % output vo ltag e from a 1.8V to 3.6V in p u t v o lta g e two a lka lin e , N iC d, or NiM H; o r one Lithium-Ion battery . Output current is 20mA (min) from

Contextual Info: H a r r is 2N7277D, 2N7277R SEMICONDUCTOR 2 REGISTRATION PENDING Currently Available as FRM234 D, R, H November 1994 i^ 7 2 7 7 H R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 7A, 250V, RDS(on) = 0.70ft TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: h a r r is S E M I C O N D U C T O R 2N7292D, 2N7292R 21^72Q2'H REGISTRATION PENDING Currently Available as FRF150 D, R, H September 1994 R a d ia tio n H a rd e n e d N -C h a n n e l P o w e r M O S F E T s Package Features • 25A, 100V, RDS(on) = 0.07Q

Contextual Info: HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM244 D, R, H November 1994 2N7287D, 2N7287R 2N7287H R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 12A, 250V, RDS(on) = 0.400Q TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL430 D, R, H November 1994 2N7281D, 2N7281R 2N7281H R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 2A, 500V, RDS(on) = 2.50ft TO-205AF • Second Generation Rad Hard MOSFET Results From New Design C oncepts

Contextual Info: H a r r is S E M I C O N D U C T O R 2N7272D, 2N7272R 21^7272H REGISTRATION PENDING Currently Available as FRL130 D, R, H November 1994 R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 8A, 100V, RDS(on) = 0.1300 TO-205AF

Contextual Info: m a r r is S E M I C O N D U C T O R 2N7290D, 2N7290R 21^7290H REGISTRATION PENDING Currently Available as FRS440 D, R, H November 1994 R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 5A, 500V, RDS(on) = 1,420ft TO-257AA

pj 939 diode

Abstract: Rad hard MOSFETS in Harris
Contextual Info: FRL130D, FRL130R, FRL130H Semiconductor 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 8A, 100V, RDS on = 0.180£i TO-205AF • Second Generation Rad Hard M OSFET Results From New Design Concepts • G am m a - M eets Pre-Rad Specifications to 100KRAD(Si)

sm69a

Abstract: 86 diode Rad hard MOSFETS in Harris S 170 TRANSISTOR
Contextual Info: Semiconductor FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 23A, -100V, r D S 0 N = 0.140S2 TO-254AA • Second Generation Rad Hard M OSFET Results From New Design Concepts • G am m a

LQ9P16

Abstract: ld7601 LQ9P161 C104 D640 X1794 LD76
Contextual Info: PREPARED BY: APPROVED BY: DATE SPEC No. FILE No. S H A R P DATE ISSUE: Jun~ 14.1995 PAGE : 18 pages LIQUID CRYSTAL DISPLAY GROUP APPLICABLE GROUP SHARP CORPORATION Liquid Crystal Display Group SPECIFICATION , LD–7601 DEVICE SPECIFICATION FOR TFT–LCD module

6N60E

Abstract: ti N60 SD 10 N60
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • • • • • PHP6N60E, PHB6N60E SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance

Contextual Info: Counterfeit Components Identification MANUFACTURED PRODUCTS & SERVICES MICROSS OFFERS AN INTELLIGENT SCREENING PROCESS TO ROOT OUT COUNTERFEIT COMPONENTS FROM THE SUPPLY CHAIN. MITIGATE THE RISK OF BUYING GREY MARKET DEVICES BY USING MICROSS’ TEST FLOWS.