TRANSISTOR MHZ S-PARAMETER LOW-NOISE VHF Search Results

Contextual Info: B iM E D N P U C T O R « MPSH11 MMBTH11 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 pA to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving

transistor rc4

Abstract: MMBT5179 MPS5179
Contextual Info: MPS5179 I MMBT5179 ^ Discrete POWER & Signal Technologies National S em icon ducto r ~ MPS5179 MMBT5179 E M a rk : 3C NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents In the 100 nA to 30 mA range in common

bf282

Abstract: mps51
Contextual Info: S E M IC O N D U C T O R tm / MMBT5179 / PN5179 MPS5179 PN5179 MMBT5179 SOT-23 Mark: 3C NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 |^A to 30 m A range in common em itter or comm on base m ode of operation, and in low frequency

TRANSISTOR C 3223

Abstract: TRANSISTOR C 1177 BT5179 NPN power transistor spice
Contextual Info: Sáfe:-O O W :Oí •v MPS5179 MMBT5179 NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 |uA to 30 m A range in common em itter or common base m ode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40.

BFR99A

Abstract: BRF99A bfr99
Contextual Info: BFR99A WIDE BAND VHF/UHF AMPLIFIER . . . . SILICON PLANAR EPITAXAL TRANSISTOR TO-72 METAL CASE VERY LOW NOISE APPLICATIONS : TELECOMMUNICATIONS WIDE BAND UHF AMPLIFIER RADIO COMMUNICATIONS DESCRIPTION The BRF99A is a silicon planar epitaxial PNP transistor produced using interdigitated base emitter geometry. It is particulary designed for use in wide band

APC UPS CIRCUIT DIAGRAM rs 1500

Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
Contextual Info: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO

PHILIPS 108 CAPACITOR

Abstract: BLF246 D11057A SC08a SOT121 711C SOT121 Package marking mgg
Contextual Info: Philips Semiconductors Product specification VHF power MOS transistor BLF246 FEATURES PINNING -S O T121 • High power gain PIN SYMBOL • Low noise figure 1 d drain • Easy power control 2 s source • Good thermal stability 3 g gate • Withstands full load mismatch.

Contextual Info: OOETTBfci MED M l A P X Philips Semiconductors Product specification HF/VHF power MOS transistor BLF242 1 N AMER PHIL IPS/DISCRETE h^E D PIN CONFIGURATION FEATURES • High power gain • Low noise • Easy power control • Good thermal stability • Withstands full load mismatch

npn UHF transistor 2N5179

Contextual Info: 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB max @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc 2 • 1 Characterized with S-Parameters

ZO 607 MA

Abstract: transistor zo 607 ZO 607 transistor transistor ZO 607 MA zo 607 zo 607 MA transistor 2SC4988
Contextual Info: 2SC4988 Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire UPAK Features • High gain bandwidth product fT = 8.5 GHz typ • High gain, low noise figure PG = 10.5 dB typ, NF = 1.3 dB typ at f = 900 MHz 1 3 2 1. Base 2. Collector 3. Emitter

TRANSISTOR marking 489 code

Abstract: 2SC5218 SC-59A Hitachi DSA0014
Contextual Info: 2SC5218 Silicon NPN Epitaxial Transistor Application MPAK VHF & UHF wide band amplifier Features 3 • High gain bandwidth product fT = 9 GHz typ. • High gain, low noise figure PG = 13.0 dB typ., NF = 1.2 dB typ. at f = 900 MHz 1 2 1. Emitter 2. Base 3. Collector

ZO 103 MA 75 623

Abstract: zo 103 ma 513 s12 datasheet 2SC4992 ZO 103 zo 405 if amplifire uhf amplifire
Contextual Info: 2SC4992 Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire CMPAK–4 Features 4 • High gain bandwidth product fT = 9.5 GHz typ • High gain, low noise figure PG = 15.0 dB typ, NF = 1.2 dB typ at f = 900 MHz 3 1 2 1. Collector 2. Emitter

2SC5141

Abstract: 2SC5218 Hitachi DSA0014
Contextual Info: 2SC5141 Silicon NPN Epitaxial Transistor Application VHF & UHF wide band amplifier SMPAK Features • High gain bandwidth product fT = 5.8 GHz typ. • High gain, low noise figure PG = 13 dB typ., NF = 1.6 dB typ. at f = 900 MHz 3 1 2 1. Emitter 2. Base 3. Collector

Philips 809 08003

Abstract: SOT123 Package BLF242 100b choke
Contextual Info: Philips Semiconductors tità B IB l OOETÌBLi MED M i A P X Product specification HF/VHF power MOS transistor BLF242 N AUER PHILIPS/DISCRETE h^E » PIN CONFIGURATION FEATURES • High power gain • Low noise • Easy power control • Good thermal stability

Contextual Info: Philips Semiconductors WM bb 5 3 R 31 Q02RR6Q 536 M APX Product specification VHF power MOS transistor BLF246 N AUER PHILIPS/DISCRETE FEATURES bRE PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability

7z31

Abstract: Philips 809 08003 SOT123 Package sot123 PINNING-SOT123 BLF242 VHF transmitter circuit T-39-07
Contextual Info: Philips Semiconductors Product specification HF/VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • • Sb E 7 13 c! ' t0 7 ' BLF242 D • 711Dfl2fci 0 0 4 3 7 6 4 47T ■ P H I N PIN CONFIGURATION High power gain Low noise Easy power control

BLF245

Abstract: sot123 package VHF transistor amplifier circuit
Contextual Info: Philips Semiconductors tb S B T B l GGSTTSB SOT M APX Product specification VHF power MOS transistor BLF245 N AUER PHILIPS/DISCRETE b^E T> PIN CONFIGURATION FEATURES • High power gain • Low noise figure • Easy power control • Good thermal stability

transistor zo 607

Abstract: transistor ZO 607 MA 2SC 1022
Contextual Info: HITACHI 2S C 4988-Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire Features • High gain bandwidth product fT = 8.5 GHz typ • High gain, low noise figure PG = 10.5 dB typ, NF = 1.3 dB typ at f = 9 0 0 MHz Table 1 Absolute M aximum Ratings Ta = 25°C

transistor marking tT2

Contextual Info: HITACHI 2SC5140-Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product f j = 9 GHz typ. • High gain, low noise figure PG = 15 dB typ., NF = 1.6 dB typ. at f = 900 MHz 1. Emitter 2. Base

transistor marking YD ghz

Abstract: 2SC4995 z 0607 ma yd 1208 transistor m 4995
Contextual Info: HITACHI 2SC4995-Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire C M P A K -4 Features • High gain bandwidth product f j = 11 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.1 dB typ at f = 900 MHz 1. 2. 3. 4.

bje 133 resistor

Contextual Info: bbSB'lBl D D S T ^ M ST? • APX Philips Semiconductors Productspecifjcatj^ VHF power MOS transistor — ^ BLF244 i FEATURES N AMER PHILIPS/] ISCRETE b*]E B PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability

Contextual Info: BFR106 Low Noise Silicon Bipolar RF Transistor • High linearity low noise RF transistor • 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA • For UHF / VHF applications • Driver for multistage amplifiers • For linear broadband and antenna amplifiers

Transistor BLF244

Abstract: philips Trimmer 60 pf pu enamelled copper wire BLF244 capacitor 104 ceramic bje 133 resistor
Contextual Info: Philips Semiconductors bbSBIBl D D E ' m M ST7 M A P X Product specification VHF power MOS transistor BLF244 N FEATURES AMER P H IL IP S /D IS C R E T E b 'i E PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability

choke marking nb 03

Abstract: SOT121 Package BLF246
Contextual Info: Philips Semiconductors a tiS 3 R 3 1 0 0 5 TRÔD 536 APX Product specification VHF power MOS transistor BLF246 b'ìE i> N AUER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability