TRANSISTOR MHZ S-PARAMETER LOW-NOISE VHF Search Results

TRANSISTOR MHZ S-PARAMETER LOW-NOISE VHF Result Highlights (5)

Part	Manufacturer	Description
NFMJMPC156R0G3D	Murata Manufacturing Co Ltd	Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose
NFM31PC276D0E3L	Murata Manufacturing Co Ltd	Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose
NFMJMPL226R0G5D	Murata Manufacturing Co Ltd	Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold

TRANSISTOR MHZ S-PARAMETER LOW-NOISE VHF Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor rc4 Abstract: MMBT5179 MPS5179 Text: MPS5179 I MMBT5179 ^ Discrete POWER & Signal Technologies National S em icon ducto r ~ MPS5179 MMBT5179 E M a rk : 3C NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents In the 100 nA to 30 mA range in common	OCR Scan	MPS5179 MMBT5179 OT-23 tS0113D transistor rc4 MMBT5179 MPS5179	PDF
bf282 Abstract: mps51 Text: S E M IC O N D U C T O R tm / MMBT5179 / PN5179 MPS5179 PN5179 MMBT5179 SOT-23 Mark: 3C NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 \|^A to 30 m A range in common em itter or comm on base m ode of operation, and in low frequency	OCR Scan	MPS5179 MMBT5179 PN5179 MMBT5179 OT-23 28E-18 bf282 mps51	PDF
TRANSISTOR C 3223 Abstract: TRANSISTOR C 1177 BT5179 NPN power transistor spice Text: Sáfe:-O O W :Oí •v MPS5179 MMBT5179 NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 \|uA to 30 m A range in common em itter or common base m ode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40.	OCR Scan	MPS5179 MMBT5179 MPS5179 TRANSISTOR C 3223 TRANSISTOR C 1177 BT5179 NPN power transistor spice	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors WM bb 5 3 R 31 Q02RR6Q 536 M APX Product specification VHF power MOS transistor BLF246 N AUER PHILIPS/DISCRETE FEATURES bRE PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability	OCR Scan	Q02RR6Q BLF246 OT121 UCA939 CA940	PDF
7z31 Abstract: Philips 809 08003 SOT123 Package sot123 PINNING-SOT123 BLF242 VHF transmitter circuit T-39-07 Text: Philips Semiconductors Product specification HF/VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • • Sb E 7 13 c! ' t0 7 ' BLF242 D • 711Dfl2fci 0 0 4 3 7 6 4 47T ■ P H I N PIN CONFIGURATION High power gain Low noise Easy power control	OCR Scan	BLF242 711DA2b OT123 PINNING-SOT123 7z31 Philips 809 08003 SOT123 Package sot123 PINNING-SOT123 BLF242 VHF transmitter circuit T-39-07	PDF
bje 133 resistor Abstract: No abstract text available Text: bbSB'lBl D D S T ^ M ST? • APX Philips Semiconductors Productspecifjcatj^ VHF power MOS transistor — ^ BLF244 i FEATURES N AMER PHILIPS/] ISCRETE b*]E B PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability	OCR Scan	BLF244 bje 133 resistor	PDF
SOT123 Package Abstract: SOT123 BLF244 International Power Sources SOT-123 Text: Philips Semiconductors Product specification VHF power MOS transistor BLF244 FEATURES • • • • • • 7110ÖEb 0Ü437T5 SMS • PHIN SbE D PHILIPS INTERNATIONAL T-J *?-11 PIN CONFIGURATION High power gain Low noise figure Easy power control Good thermal stability	OCR Scan	BLF244 711002b OT123 7110fi5b T-39-11 SOT123 Package SOT123 BLF244 International Power Sources SOT-123	PDF
pulse h1251 Abstract: H1251 MMBTH10 MPSH10 TRANSISTOR C 3223 MPS-H10 national MPSH10 s parameters Text: MPSH10 I MMBTH10 & D iscrete P O W E R & S ig n a l T echnologies National S e m i c o n d u c t o r " MPSH10 NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 pA to 20 mA range in common	OCR Scan	MPSH10 MMBTH10 1000pF bSD113D pulse h1251 H1251 MMBTH10 MPSH10 TRANSISTOR C 3223 MPS-H10 national MPSH10 s parameters	PDF
Untitled Abstract: No abstract text available Text: 2SC5080 Silicon NPN Epitaxial Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product • High gain, low noise figure fT= 13.5 GHz typ PG = 18 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline MPAK-4 4 - 3^dBgH 1.	OCR Scan	2SC5080	PDF
MMBTSC3356 Abstract: No abstract text available Text: MMBTSC3356 NPN Silicon Epitaxial Planar Transistor for microwave low noise amplifier at VHF, UHF and CATV band The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC	Original	MMBTSC3356 OT-23 MMBTSC3356	PDF
catv bridge amplifier Abstract: MMBTSC3356 Text: MMBTSC3356 NPN Silicon Epitaxial Planar Transistor for microwave low noise amplifier at VHF, UHF and CATV band The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC	Original	MMBTSC3356 OT-23 catv bridge amplifier MMBTSC3356	PDF
MPA92 Abstract: 68W* transistor 68w transistor SOT123 Package BLF245 BH RV transistor International Power Sources P101 sot123 GZ22 Text: Product specification Philips Semiconductora VHF power MOS transistor PHILIPS INTERNATIONAL T 5bE D • - 3 1-11 * BLF245 711GflSb 0043301 3flfl BIPHIN PIN CONFIGURATION FEATURES • High power gain • Low noise figure • Easy power control • Good thermal stability	OCR Scan	TBLF245 OT123 -SOT123 711002b BLF245 T-39-11 7110fl2b MPA92 68W* transistor 68w transistor SOT123 Package BH RV transistor International Power Sources P101 sot123 GZ22	PDF
MMBTSC3356W Abstract: No abstract text available Text: MMBTSC3356W NPN Silicon Epitaxial Planar Transistor for microwave low noise amplifier at VHF, UHF and CATV band. The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. Absolute Maximum Ratings Ta = 25 OC Parameter Symbol	Original	MMBTSC3356W MMBTSC3356W	PDF
MMBTSC3356W Abstract: uhf Low Noise transistor Text: MMBTSC3356W NPN Silicon Epitaxial Planar Transistor for microwave low noise amplifier at VHF, UHF and CATV band. The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. Absolute Maximum Ratings Ta = 25 OC Parameter Symbol	Original	MMBTSC3356W MMBTSC3356W uhf Low Noise transistor	PDF

Untitled Abstract: No abstract text available Text: Signelic* Military Linear Products Product specification Double-balanced mixer and oscillator 602 DESCRIPTION FEATURES The 602 is a low-power VHF monolithic double-balanced mixer with input amplifier, on board oscillator, and voltage regulator. It is intended for high performance, low power	OCR Scan	45MHz. 200MHz. 45MHz	PDF
transistor Bf 444 Abstract: transistor bf 324 BF324 pnp vhf transistor TRANSISTOR Bf 522 f324 Text: 25C » • ô53SbQS GQa4H73 ü « S I E G [.• PNP Silicon RF Transistor SIEMENS AKTIEN ÛESELLSCH AF '3 T -? / -'? BF 324 D.- for large-signal VHF stages BF 324 is an epitaxial PNP silicon planar transistor in TO 92 plastic package TO A 3	OCR Scan	53SbQS GQa4H73 Q62702-F311 6235bQS 000447b transistor Bf 444 transistor bf 324 BF324 pnp vhf transistor TRANSISTOR Bf 522 f324	PDF
MPSH10 fairchild transistor Abstract: MMBTH10 Spice Model MPS-H10 MMBTH10 MPSH10 TRANSISTOR C 3223 1358p Text: MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency	Original	MPSH10 MMBTH10 OT-23 MPSH10 MPSH10 fairchild transistor MMBTH10 Spice Model MPS-H10 MMBTH10 TRANSISTOR C 3223 1358p	PDF
BF579 Abstract: marking GG BF579R Text: Temic BF579/BF579R S e m i c o n d u c t o r s Silicon PNP Planar RF Transistor Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features • High transition frequency • Low disortation 1 _EL R H ^ 2 FT 94 9280 — B 3	OCR Scan	BF579/BF579R BF579R BF579 10-Mar-97 marking GG	PDF
BFR99 Abstract: BFR99 transistor BFr pnp transistor BFy 90 transistor Text: BFR99 SILICON PLANAR PNP WIDE BAND VHF/UHF AMPLIFIER The BFR 99 is a silicon planar epitaxial PNP transistor in Jedec T O -7 2 metal case, particu larly designed fo r wide band co m m o n -e m itte r linear am plifier applications up to 1 GHz. It features very high f T , very low reverse capacitance, very good cross-m odulation properties	OCR Scan	BFR99 BFR99 G-1879 BFR99 transistor BFr pnp transistor BFy 90 transistor	PDF
zo 103 ma Abstract: 2SC5247 transistor ECG 332 DSA003641 Text: 2SC5247 Silicon NPN Bipolar Transistor ADE-208-281 Z 1st. Edition Oct. 1994 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHz	Original	2SC5247 ADE-208-281 zo 103 ma 2SC5247 transistor ECG 332 DSA003641	PDF
colpitts oscillator 400 MHz Abstract: ASK 315MHZ ASK 434MHZ ld-sw prescaler 64 capacitor 220p SSOP-16 SSTX4915 TX4915 car alarm crystal transmitter Text: SSTX4915 Preliminary Description The SSTX4915 is a low power ASK transmitter IC intended for applications in the North American and European VHF/UHF bands. The integrated voltage-controlled oscillator VCO , phase/frequency detector, prescaler, and reference oscillator require only the	Original	SSTX4915 SSTX4915 colpitts oscillator 400 MHz ASK 315MHZ ASK 434MHZ ld-sw prescaler 64 capacitor 220p SSOP-16 TX4915 car alarm crystal transmitter	PDF
transistor hitachi Abstract: HITACHI VC-6045 Text: 2SC5080 Silicon NPN Epitaxial Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline MPAK-4 4 1 ! S a!l!tlQr £	OCR Scan	2SC5080 transistor hitachi HITACHI VC-6045	PDF
Untitled Abstract: No abstract text available Text: 32E D • Ö53b320 PNP Silicon RF Transistor Q01b744 S «SIP BF 579 SIEMENS/ SPCLi SEMICONDS r - 3 i- 1 7 • Suitable for low distortion, low noise VHF/U HF amplifier and UHF oscillator applications in TV tuners • High transition frequency of 1.6 GHz at typical operating current of 10 mA	OCR Scan	53b320 Q01b744 Q62702-F552 Q62702-F971 20base A23b320 QGlb74b	PDF
SL6 TRANSISTOR Abstract: No abstract text available Text: 2SC5080 Silicon NPN Epitaxial Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ. NF = 1.1 dB typ at f = 900 MHz Outline MPAK-4 • 1. 2. 3.	OCR Scan	2SC5080 D-85622 SL6 TRANSISTOR	PDF

TRANSISTOR MHZ S-PARAMETER LOW-NOISE VHF Search Results

TRANSISTOR MHZ S-PARAMETER LOW-NOISE VHF Result Highlights (5)

TRANSISTOR MHZ S-PARAMETER LOW-NOISE VHF Datasheets Context Search

transistor rc4

bf282

TRANSISTOR C 3223

Untitled

7z31

bje 133 resistor

SOT123 Package

pulse h1251

Untitled

MMBTSC3356

catv bridge amplifier

MPA92

MMBTSC3356W

MMBTSC3356W

Untitled

transistor Bf 444

MPSH10 fairchild transistor

BF579

BFR99

zo 103 ma

colpitts oscillator 400 MHz

transistor hitachi

Untitled

SL6 TRANSISTOR