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    TRANSISTOR MARKING S2A Search Results

    TRANSISTOR MARKING S2A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING S2A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E


    Original     		PDF SMBT3906/ MMBT3906 SMBT3904/ MMBT3904 VPS05161

    marking code s2a SOT23

    Abstract: smbt3906 MMBT3906 infineon
    Text: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E


    Original     		PDF SMBT3906/ MMBT3906 SMBT3904/ MMBT3904 VPS05161 marking code s2a SOT23 smbt3906 MMBT3906 infineon

    MMBT3906

    Abstract: SMBT3906 EHP00772 TRANSISTOR S2A 1N916 MMBT3904 SMBT3904
    Text: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E


    Original     		PDF SMBT3906/ MMBT3906 SMBT3904/ MMBT3904 VPS05161 EHP00771 EHP00768 Jul-28-2003 MMBT3906 SMBT3906 EHP00772 TRANSISTOR S2A 1N916 MMBT3904 SMBT3904

    power 22E

    Abstract: TRANSISTOR S2A s2A SOT23 1N916 SMBT3904 SMBT3906 H12E sot23 transistor marking 12E IC MARKING NS-05 marking s2A
    Text: SMBT3906 PNP Silicon Switching Transistor 3  High DC current gain: 0.1 mA to 100 mA  Low collector-emitter saturation voltage  Complementary type: SMBT3904 NPN 2 1 Type SMBT3906 Marking s2A Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings


    Original     		PDF SMBT3906 SMBT3904 VPS05161 EHP00773 EHP00768 Aug-20-2001 EHP00769 power 22E TRANSISTOR S2A s2A SOT23 1N916 SMBT3904 SMBT3906 H12E sot23 transistor marking 12E IC MARKING NS-05 marking s2A

    power 22E

    Abstract: TRANSISTOR S2A SMBT3906 1N916 SMBT3904
    Text: SMBT3906 PNP Silicon Switching Transistor 3  High DC current gain: 0.1 mA to 100 mA  Low collector-emitter saturation voltage  Complementary type: SMBT3904 NPN 2 1 Type SMBT3906 Marking s2A Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings


    Original     		PDF SMBT3906 SMBT3904 VPS05161 EHP00773 EHP00768 Nov-30-2001 EHP00769 power 22E TRANSISTOR S2A SMBT3906 1N916 SMBT3904

    3906

    Abstract: transistor 3906 k0300 H12E 1N916 EHP00772 3906 pnp ic power 22E
    Text: SMBT 3906 PNP Silicon Switching Transistor 3  High DC current gain: 0.1mA to 100mA  Low collector-emitter saturation voltage  Complementary type: SMBT 3904 NPN 2 1 Type Marking SMBT 3906 s2A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings


    Original     		PDF 100mA VPS05161 OT-23 EHP00772 EHP00773 Oct-14-1999 EHP00768 EHP00769 3906 transistor 3906 k0300 H12E 1N916 EHP00772 3906 pnp ic power 22E

    H12E

    Abstract: h11E 3906 3906 TRANSISTOR npn transistor 3906 s2A SOT23 PNP 3906 SOT23 3904 SOT
    Text: PNP Silicon Switching Transistor SMBT 3906 High DC current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Complementary type: SMBT 3904 NPN ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBT 3906


    Original     		PDF Q68000-A4417 OT-23 H12E h11E 3906 3906 TRANSISTOR npn transistor 3906 s2A SOT23 PNP 3906 SOT23 3904 SOT

    H12E

    Abstract: h11E IC 720 3906 transistor 3906 transistor pnp 3906 3906 SOT h22e
    Text: PNP Silicon Switching Transistor SMBT 3906 High DC current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Complementary type: SMBT 3904 NPN ● 2 3 1 Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBT 3906


    Original     		PDF Q68000-A4417 OT-23 H12E h11E IC 720 3906 transistor 3906 transistor pnp 3906 3906 SOT h22e

    melf diode marking

    Abstract: A180-WLA RS503s SBR130S3 Schottky melf hall sensor 35l 5KE91A-B PR1005G-A GBPC3504L STPR2020CT
    Text: PCN PART NUMBER LISTING Part Number PCN Title Rel date Comments 1.5KE100A-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100A-T 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-T 1049 Lead-Free Lead Finish


    Original     		PDF 5KE100A-B 5KE100A-T 5KE100CA-B 5KE100CA-T 5KE10A-A 5KE10A-B 5KE10A-T 5KE10CA-B 5KE10CA-T 5KE110A-B melf diode marking A180-WLA RS503s SBR130S3 Schottky melf hall sensor 35l 5KE91A-B PR1005G-A GBPC3504L STPR2020CT

    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor

    CH3906GP

    Abstract: SOT-23 marking S2A
    Text: CHENMKO ENTERPRISE CO.,LTD CH3906GP SURFACE MOUNT PNP Switching Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * Low voltage Max.=40V . * High saturation current capability.


    Original     		PDF CH3906GP OT-23 OT-23) 200mA) CH3906GP SOT-23 marking S2A

    PNP marking NY sot-223

    Abstract: TRANSISTOR S2A 2F PNP SOT23 2SA1036K s2A SOT23 marking NY sot-223 transistors sot-223 transistor circuit s2A PART MARKING SOT-23 TRANSISTOR CH3906
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Collector to Emitter Voltage VCEO V PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Voltage Power Gain Outline Collector to Dissipation Bandwidh No. Emitter Collector Current DC Current Gain


    Original     		PDF CHTA64X CHT3906X CHT2907X CHT4033X CHT5401X CHTA92X CHTA64Z CHT3906Z CHT2907Z CHT2955Z PNP marking NY sot-223 TRANSISTOR S2A 2F PNP SOT23 2SA1036K s2A SOT23 marking NY sot-223 transistors sot-223 transistor circuit s2A PART MARKING SOT-23 TRANSISTOR CH3906

    TRANSISTOR S2A

    Abstract: power 22E FBPT-923
    Text: CHENMKO ENTERPRISE CO.,LTD CH3906N1PT SURFACE MOUNT PNP Switching Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FBPT-923 FEATURE * Small surface mounting type. FBPT-923


    Original     		PDF CH3906N1PT FBPT-923 FBPT-923) 200mA) TRANSISTOR S2A power 22E FBPT-923

    sot23 transistor marking 12E

    Abstract: TRANSISTOR S2A CH3906PT power 22E 1N916 SOT-23 marking S2A marking s2A sot23
    Text: CHENMKO ENTERPRISE CO.,LTD CH3906PT SURFACE MOUNT PNP Switching Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * Low voltage Max.=40V . * High saturation current capability.


    Original     		PDF CH3906PT OT-23 OT-23) 200mA) 1N916 sot23 transistor marking 12E TRANSISTOR S2A CH3906PT power 22E 1N916 SOT-23 marking S2A marking s2A sot23

    2n3906 equivalent transistor

    Abstract: TRANSISTOR S2A 1N916 2N3906 MMDT3906 SC70-6L marking code nt amplifier
    Text: MMDT3906 DUAL SURFACE MOUNT PNP TRANSISTORS This device contains two electrically-isolated 2N3906 PNP transistors. The two transistors have well matched hFE and are encapsulated in an ultrasmall SOT-363 SC70-6L package. This device is ideal for portable


    Original     		PDF MMDT3906 2N3906 OT-363 SC70-6L) MMDT3906 T/R13 2n3906 equivalent transistor TRANSISTOR S2A 1N916 SC70-6L marking code nt amplifier

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    TPC6001

    Abstract: transistor marking S2A s2a transistor
    Text: TPC6001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII TPC6001 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.) · High forward transfer admittance: |Yfs| = 15 S (typ.)


    Original     		PDF TPC6001 TPC6001 transistor marking S2A s2a transistor

    s2a transistor

    Abstract: No abstract text available
    Text: TPC6001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII TPC6001 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.) • High forward transfer admittance: |Yfs| = 15 S (typ.)


    Original     		PDF TPC6001 s2a transistor

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon Switching Transistor SMBT 3906 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3904 NPN Type Marking Ordering Code (tape and reel) PinCtonfigu ration 1 2 3 Package1)


    OCR Scan     		PDF Q68000-A4417 OT-23 EHP00770 EHP00772 S35bOÂ 01EES4S A235b05 012254b

    3906

    Abstract: sot transistor 3906 transistor 3906 BT3904 transistor pnp 3906 3904 SOT SAW MARKING CODE SOT-23 transistor 3906 SOT23
    Text: SIEMENS PNP Silicon Switching Transistor SMBT 3906 • High D C current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: SM B T 3904 NPN Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1)


    OCR Scan     		PDF Q68000-A4417 OT-23 EHP0Q77Q 3906 sot transistor 3906 transistor 3906 BT3904 transistor pnp 3906 3904 SOT SAW MARKING CODE SOT-23 transistor 3906 SOT23

    BT 815 transistor

    Abstract: BT 816 transistor
    Text: 3EE D • ÔSBbBHQ 0017S3? 4 SMBT3906 PNP Silicon Switching Transistor SIEMENS/ SPCL-. SEMICONDS • • • ISIP r-3'7- i r High D C current gain: 0.1 to 100 mA Low collector-emitter saturation voltage Complementary type: S M B T 3904 NPN Type Marking Ordering code


    OCR Scan     		PDF 0017S3? SMBT3906 Q68000-A4341 Q68000-A4417 23b320 BT 815 transistor BT 816 transistor

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan     		PDF LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


    OCR Scan     		PDF Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc