TRANSISTOR MARKING CODE QM Search Results

Contextual Info: SIEMENS BFP 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

CSG3001-18A04

Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
Contextual Info: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power

diode tfk s 220

Abstract: tfk s 220 diode 12A3 rg4 77 diode tfk s 92 TFK diode tfk 3b tfk transistor Tfk 237 TCA 321
Contextual Info: 17E I I B^SDDRb ODD^bS^ 3 • m ilF iy iim iM electronic Crt*tiv«1«chnolo$tt ALGG i l ? ■ TFK 3080 D TELEFUNKEN ELECTRONIC [ Preliminary specifications [ NPN Silicon Tripleton Power Transistor T-33-3£~ Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)

Contextual Info: SD2951-10 250 W, 50 V HF/VHF DMOS transistor Datasheet - target specification Description The SD2951-10 is an N-channel MOS field-effect RF power transistor, intended for use in 50 V dc large signal applications up to 230 MHz. It offers 25% lower RDS ON than the industry standard,

Contextual Info: STWD100 Watchdog timer circuit Datasheet - production data Applications • Telecommunications  Alarm systems  Industrial equipment  Networking SOT23-5 WY  Medical equipment SC70-5, SOT323-5 (W8)  UPS (uninterruptible power supply) Features

6n134

Abstract: hp 2631 8102801EX 6n134txv OPTOCOUPLER hp 2631
Contextual Info: Wha\ mL'KM HPAE CWKLAERTDT Dual Channel High CMR High Speed Hermetically Sealed Optocouplers Technical Data Features • Dual Marked with DESC Standard Military Drawing • Manufactured and Tested on a MIL-STD-1772 Certified Line • QML-MIL-H-38534, Class H

Contextual Info: STAC9200 200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package Datasheet - preliminary data Features • Improved ruggedness: V BR DSS > 80 V • Load mismatch 65:1 all phases @ 200 W / 32 V / 860 MHz • POUT = 200 W min. (250 W typ.) with 16 dB gain @ 860 MHz

stac2942

Contextual Info: STAC2942B RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Features • Gold metallization • Excellent thermal stability • Common source push-pull configuration • POUT = 350 W min. with 21 dB gain @ 175 MHz • In compliance with the 2002/95/EC European

st smd IC marking code

Abstract: 2N5154ESYHRT
Contextual Info: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features 2 TO-39 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 3 1 TO-257 2 3 1 • Hi-Rel NPN bipolar transistor • Linear gain characteristics

T 3036

Abstract: bel transistor 1041 B SAQ marking 2N23 2N2377 S19C T3036
Contextual Info: MlL-S-l 9500/288 24 Apdl 1964 MILITARY EL SPECIFICATION TRANSISTOR, PNP, SILICON TYPE 2N2377 . 1. SCOPE . i’ .- This specification *is~*l.dlo4mdo-ky~qmplifl&ciK.i~. 1.2 Outline and dlmemioru. - 1.3 Particular electrical coven the de?ajl requirem&ts “o,

Contextual Info: STAC9200 200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package Datasheet - preliminary data Features • Improved ruggedness: V BR DSS > 80 V • Load mismatch 65:1 all phases @ 200 W / 32 V / 860 MHz under 1 msec - 10% • POUT = 200 W min. (250 W typ.) with 16 dB

Contextual Info: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet - production data Features 2 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 3 1 TO-257 TO-39 2 3 1 • Hi-Rel PNP bipolar transistor • Linear gain characteristics

520301006R

Abstract: 2N5154RESYHRG
Contextual Info: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features 2 TO-39 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 3 1 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor • Linear gain characteristics

transistor DK qj

Abstract: qm marking code sot-23 300I/TT MCP100T-300I/TT transistor marking code QM marking qk sot TRANSISTOR to92 MARKING CODE DK
Contextual Info: MCP100/101 Microcontroller Supervisory Circuit with Push-Pull Output FEATURES • Holds microcontroller in reset until supply voltage reaches stable operating level • Resets microcontroller during power loss • Precision monitoring of 3V, 3.3V and 5V systems

JANSR2N5401UB

Abstract: 2N5401UB06 J2N5401UB1
Contextual Info: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate

Contextual Info: SD2931-12MR 150 W – 50 V moisture resistant HF/VHF DMOS transistor Datasheet - production data Description The SD2931-12MR is a gold metallized Nchannel MOS field-effect RF power transistor. Electrically identical to the standard SD2931 MOSFET, it is intended for use in 50 V DC large

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

ESCC 5207 005

Abstract: 2N3810HR 2N3810HRG
Contextual Info: 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V, 0.05 A Datasheet - production data Features 21 3 4 56 BVCEO 60 V IC max 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor

TRANSISTOR SMD MARKING CODE 1 KW

Contextual Info: 2N2920AHR Hi-Rel NPN dual matched bipolar transistor 60 V, 0.03 A Datasheet - production data Features 60 V IC max 0.03 A HFE at 10 V - 150 mA > 300 Operating temperature range -65°C to +200°C • Hi-Rel NPN dual matched bipolar transistor LCC-6 TO-77

MARKING CODE SMD IC 531

Abstract: TRANSISTOR SMD MARKING CODE 1 KW
Contextual Info: 2N2920AHR Hi-Rel NPN dual matched bipolar transistor 60 V, 0.03 A Datasheet - production data Features 60 V IC max 0.03 A HFE at 10 V - 150 mA > 300 Operating temperature range -65°C to +200°C • Hi-Rel NPN dual matched bipolar transistor LCC-6 TO-77

Contextual Info: SD4933MR 50 V moisture resistant DMOS transistor for ISM applications Datasheet - preliminary data Features • Improved ruggedness V BR DSS > 200 V • Excellent thermal stability • 20:1 all phases load mismatch capability • POUT = 300 W min. with 24 dB gain @ 30 MHz

SG3081

Abstract: sg3081j uA701 TRANSISTOR SMD MARKING CODE 97 transistor smd marking 431 SMD Transistor 431 ac qml-38535 GDIP1-T16 MIL-PRF38535 6 pin TRANSISTOR SMD CODE PA
Contextual Info: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA APPROVED 02-06-25 R. MONNIN Make correction to the HFE test as specified under table I. - ro THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHEET REV SHEET REV STATUS REV A A A A A A A A OF SHEETS

04029-01TX

Abstract: QML-19500 2N5927 NPN power switching transistor 32953 power tech 32953 ASME-14
Contextual Info: REVISIONS LTR DESCRIPTION DATE APPROVED MIL-S-19500/440 has been cancelled. This drawing may be used as a substitute. Prepared in accordance with ASME-14.100 Selected item drawing REV PAGE REV PAGE REV STATUS OF PAGES REV PAGES PMIC N/A Original date of drawing

marking code AHF

Contextual Info: SD4931 HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Improved ruggedness V BR DSS > 200 V • Excellent thermal stability • 20:1 all phases load mismatch capability • POUT = 150 W min. with 14.8 dB gain @ 175 MHz • In compliance with the 2002/95/EC European