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    TRANSISTOR MARKING CODE QM Search Results

    TRANSISTOR MARKING CODE QM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING CODE QM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CSG3001-18A04

    Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
    Text: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power


    Original     		400F415 460F460 500F500 630F415 730F460 800F500 570F575 630F660 870F575 1000F660 CSG3001-18A04 thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04 PDF

    Untitled

    Abstract: No abstract text available
    Text: SD2951-10 250 W, 50 V HF/VHF DMOS transistor Datasheet - target specification Description The SD2951-10 is an N-channel MOS field-effect RF power transistor, intended for use in 50 V dc large signal applications up to 230 MHz. It offers 25% lower RDS ON than the industry standard,


    Original     		SD2951-10 SD2951-10 SD2931-10 DocID025130 PDF

    Untitled

    Abstract: No abstract text available
    Text: STWD100 Watchdog timer circuit Datasheet - production data Applications • Telecommunications  Alarm systems  Industrial equipment  Networking SOT23-5 WY  Medical equipment SC70-5, SOT323-5 (W8)  UPS (uninterruptible power supply) Features


    Original     		STWD100 OT23-5 SC70-5, OT323-5 OT23-5, SC70-5 OT323-5) STWD100NWWY3F OT23-5L DocID014134 PDF

    Untitled

    Abstract: No abstract text available
    Text: STAC9200 200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package Datasheet - preliminary data Features • Improved ruggedness: V BR DSS > 80 V • Load mismatch 65:1 all phases @ 200 W / 32 V / 860 MHz • POUT = 200 W min. (250 W typ.) with 16 dB gain @ 860 MHz


    Original     		STAC9200 2002/95/EC STAC244B STAC9200 DocID025416 PDF

    stac2942

    Abstract: No abstract text available
    Text: STAC2942B RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Features • Gold metallization • Excellent thermal stability • Common source push-pull configuration • POUT = 350 W min. with 21 dB gain @ 175 MHz • In compliance with the 2002/95/EC European


    Original     		STAC2942B 2002/95/EC STAC244B STAC2942B STAC2942BW STAC2942 DocID15501 stac2942 PDF

    st smd IC marking code

    Abstract: 2N5154ESYHRT
    Text: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features 2 TO-39 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 3 1 TO-257 2 3 1 • Hi-Rel NPN bipolar transistor • Linear gain characteristics


    Original     		2N5154HR O-257 2N5154HR O-257 DocID15387 st smd IC marking code 2N5154ESYHRT PDF

    T 3036

    Abstract: bel transistor 1041 B SAQ marking 2N23 2N2377 S19C T3036
    Text: MlL-S-l 9500/288 24 Apdl 1964 MILITARY EL SPECIFICATION TRANSISTOR, PNP, SILICON TYPE 2N2377 . 1. SCOPE . i’ .- This specification *is~*l.dlo4mdo-ky~qmplifl&ciK.i~. 1.2 Outline and dlmemioru. - 1.3 Particular electrical coven the de?ajl requirem&ts “o,


    Original     		2N2377 MIL-S-19SCW288 MIL-s-19500/288 T 3036 bel transistor 1041 B SAQ marking 2N23 2N2377 S19C T3036 PDF

    Untitled

    Abstract: No abstract text available
    Text: STAC9200 200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package Datasheet - preliminary data Features • Improved ruggedness: V BR DSS > 80 V • Load mismatch 65:1 all phases @ 200 W / 32 V / 860 MHz under 1 msec - 10% • POUT = 200 W min. (250 W typ.) with 16 dB


    Original     		STAC9200 2002/95/EC STAC244B STAC9200 DocID025416 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet - production data Features 2 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 3 1 TO-257 TO-39 2 3 1 • Hi-Rel PNP bipolar transistor • Linear gain characteristics


    Original     		2N5153HR O-257 2N5153HR O-257 DocID15386 PDF

    520301006R

    Abstract: 2N5154RESYHRG
    Text: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features 2 TO-39 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 3 1 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor • Linear gain characteristics


    Original     		2N5154HR O-257 2N5154HR O-257 DocID15387 520301006R 2N5154RESYHRG PDF

    transistor DK qj

    Abstract: qm marking code sot-23 300I/TT MCP100T-300I/TT transistor marking code QM marking qk sot TRANSISTOR to92 MARKING CODE DK
    Text: MCP100/101 Microcontroller Supervisory Circuit with Push-Pull Output FEATURES • Holds microcontroller in reset until supply voltage reaches stable operating level • Resets microcontroller during power loss • Precision monitoring of 3V, 3.3V and 5V systems


    Original     		MCP100/101 MCP100/101) DS11187E-page transistor DK qj qm marking code sot-23 300I/TT MCP100T-300I/TT transistor marking code QM marking qk sot TRANSISTOR to92 MARKING CODE DK PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet - production data Features 2 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 3 1 TO-257 TO-39 2 3 1 • Hi-Rel PNP bipolar transistor • Linear gain characteristics


    Original     		2N5153HR O-257 2N5153HR O-257 DocID15386 PDF

    JANSR2N5401UB

    Abstract: 2N5401UB06 J2N5401UB1
    Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate


    Original     		2N5401HR 2N5401HR MIL-PRF19500 DocID16934 JANSR2N5401UB 2N5401UB06 J2N5401UB1 PDF

    Untitled

    Abstract: No abstract text available
    Text: SD2931-12MR 150 W – 50 V moisture resistant HF/VHF DMOS transistor Datasheet - production data Description The SD2931-12MR is a gold metallized Nchannel MOS field-effect RF power transistor. Electrically identical to the standard SD2931 MOSFET, it is intended for use in 50 V DC large


    Original     		SD2931-12MR SD2931-12MR SD2931 SD2931 M174MR DocID023650 PDF

    TRANSISTOR SMD MARKING CODE 1 KW

    Abstract: No abstract text available
    Text: 2N2920AHR Hi-Rel NPN dual matched bipolar transistor 60 V, 0.03 A Datasheet - production data Features 60 V IC max 0.03 A HFE at 10 V - 150 mA > 300 Operating temperature range -65°C to +200°C • Hi-Rel NPN dual matched bipolar transistor LCC-6 TO-77


    Original     		2N2920AHR 2N2920AHR DocID15383 TRANSISTOR SMD MARKING CODE 1 KW PDF

    MARKING CODE SMD IC 531

    Abstract: TRANSISTOR SMD MARKING CODE 1 KW
    Text: 2N2920AHR Hi-Rel NPN dual matched bipolar transistor 60 V, 0.03 A Datasheet - production data Features 60 V IC max 0.03 A HFE at 10 V - 150 mA > 300 Operating temperature range -65°C to +200°C • Hi-Rel NPN dual matched bipolar transistor LCC-6 TO-77


    Original     		2N2920AHR 2N2920AHR DocID15383 MARKING CODE SMD IC 531 TRANSISTOR SMD MARKING CODE 1 KW PDF

    Untitled

    Abstract: No abstract text available
    Text: SD4933MR 50 V moisture resistant DMOS transistor for ISM applications Datasheet - preliminary data Features • Improved ruggedness V BR DSS > 200 V • Excellent thermal stability • 20:1 all phases load mismatch capability • POUT = 300 W min. with 24 dB gain @ 30 MHz


    Original     		SD4933MR 2002/95/EEC M177MR SD4933MR DocID023664 PDF

    SG3081

    Abstract: sg3081j uA701 TRANSISTOR SMD MARKING CODE 97 transistor smd marking 431 SMD Transistor 431 ac qml-38535 GDIP1-T16 MIL-PRF38535 6 pin TRANSISTOR SMD CODE PA
    Text: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA APPROVED 02-06-25 R. MONNIN Make correction to the HFE test as specified under table I. - ro THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHEET REV SHEET REV STATUS REV A A A A A A A A OF SHEETS


    Original     		SG3081J/883B SG3081 sg3081j uA701 TRANSISTOR SMD MARKING CODE 97 transistor smd marking 431 SMD Transistor 431 ac qml-38535 GDIP1-T16 MIL-PRF38535 6 pin TRANSISTOR SMD CODE PA PDF

    04029-01TX

    Abstract: QML-19500 2N5927 NPN power switching transistor 32953 power tech 32953 ASME-14
    Text: REVISIONS LTR DESCRIPTION DATE APPROVED MIL-S-19500/440 has been cancelled. This drawing may be used as a substitute. Prepared in accordance with ASME-14.100 Selected item drawing REV PAGE REV PAGE REV STATUS OF PAGES REV PAGES PMIC N/A Original date of drawing


    Original     		MIL-S-19500/440 ASME-14 2N5927 037Z3 04029-01TX 04029-01TXV 04029-01TX QML-19500 2N5927 NPN power switching transistor 32953 power tech 32953 PDF

    marking code AHF

    Abstract: No abstract text available
    Text: SD4931 HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Improved ruggedness V BR DSS > 200 V • Excellent thermal stability • 20:1 all phases load mismatch capability • POUT = 150 W min. with 14.8 dB gain @ 175 MHz • In compliance with the 2002/95/EC European


    Original     		SD4931 2002/95/EC SD4931 DocID15486 marking code AHF PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan     		Q62702-F1382 OT-143 235bQ5 BFP183 900MHz PDF

    diode tfk s 220

    Abstract: tfk s 220 diode 12A3 rg4 77 diode tfk s 92 TFK diode tfk 3b tfk transistor Tfk 237 TCA 321
    Text: 17E I I B^SDDRb ODD^bS^ 3 • m ilF iy iim iM electronic Crt*tiv«1«chnolo$tt ALGG i l ? ■ TFK 3080 D TELEFUNKEN ELECTRONIC [ Preliminary specifications [ NPN Silicon Tripleton Power Transistor T-33-3£~ Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)


    OCR Scan     		S1000 O888E T0126 15A3DIN diode tfk s 220 tfk s 220 diode 12A3 rg4 77 diode tfk s 92 TFK diode tfk 3b tfk transistor Tfk 237 TCA 321 PDF

    6n134

    Abstract: hp 2631 8102801EX 6n134txv OPTOCOUPLER hp 2631
    Text: Wha\ mL'KM HPAE CWKLAERTDT Dual Channel High CMR High Speed Hermetically Sealed Optocouplers Technical Data Features • Dual Marked with DESC Standard Military Drawing • Manufactured and Tested on a MIL-STD-1772 Certified Line • QML-MIL-H-38534, Class H


    OCR Scan     		6N134 6N134/883B 8102801EX 6N134) MIL-H-38534 6N134/883B) 8102801EX) 8102801EX 6N134TXV hp 2631 OPTOCOUPLER hp 2631 PDF

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc PDF