TRANSISTOR MARKING C GHZ Search Results

npn transistor sot-89 MARKING AG

Contextual Info: NPN Silicon RF Transistor BFQ 19S • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 10 to 70 mA. 6 CECC-type available: C E C C 50002/259. Type Marking Ordering code tape and reel

sot-23 MARKING CODE ZA

Abstract: sot-23 CODE 41 bfs17p mc
Contextual Info: NPN Silicon RF Transistor BFS17P • For broadband amplifiers up to 1 G H z at collector currents from 1 to 20 mA. E C E C C -typ e available: C E C C 50002/262. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code

BF 145 transistor

Abstract: BF 923
Contextual Info: SIEMENS BF 517 NPN Silicon RF Transistor • For amplifier and oscillator applications in TV-tuners Type Marking Ordering Code BF 517 LRs Pin Configuration Q62702-F42 1=B Package 2=E 3=C SOT-23 Maximum Ratings of any single Transistor Parameter Symbol Collector-emitter voltage

Q62702-F42

Contextual Info: BF 517 NPN Silicon RF Transistor • For amplifier and oscillator applications in TV-tuners Type Marking Ordering Code Pin Configuration BF 517 LRs 1=B Q62702-F42 2=E Package 3=C SOT-23 Maximum Ratings of any single Transistor Parameter Symbol Collector-emitter voltage

transistor marking MCs

Abstract: SOT 23 CODE MCS NPN marking MCs marking MCs sot-323 Q62702-F1645 bfs 11
Contextual Info: BFS 17W NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Type Marking Ordering Code Pin Configuration BFS 17W MCs 1=B Q62702-F1645 2=E Package 3=C SOT-323 Maximum Ratings of any single Transistor Parameter

Contextual Info: SIEMENS BF 517 NPN Silicon RF Transistor • For amplifier and oscillator applications in TV-tuners Type Marking Ordering Code Pin Configuration BF 517 LRs Q62702-F42 1= B Package 2=E 3=C SOT-23 Maximum Ratings of any single Transistor Parameter Symbol Collector-emitter voltage

bft93

Abstract: marking x1 B 647 AC transistor
Contextual Info: BFT93 PNP Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 to 30 mA. • Complementary type: BFR 93P NPN . C ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking

BFW92

Contextual Info: Tem ic BFW92 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF amplifier up to GHz range. Features • High power gain • Low noise figure BFW92 Marking: BFW92

Contextual Info: SIEMENS BFS17W NPN Silicon RF Transistor >For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Marking Ordering Code B F S 17W M Cs Pin Configuration Q62702-F1645 1 =B Package ro il m Type 3 =C SOT-323 Maximum Ratings of any single Transistor

BF998W

Abstract: SOT 343 MARKING BF BF998
Contextual Info: BF998W Silicon N-Channel MOSFET Tetrode 3
Short-channel transistor 4 with high S/C quality factor
For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

marking GG

Abstract: marking code 604 SOT23
Contextual Info: NPN Silicon RF Transistor BFR 93P • For low -distortion broadband am plifiers up to 1 GHz at collector currents from 2 to 30 mA. c ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Package

transistor MAR 543

Abstract: transistor BFR91 IPS240 BFR91 transistor transistor mar 839 Telefunken u 439 transistor MAR 439
Contextual Info: Temic BFR91 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • • • High power gain Low noise figure High transition frequency BFR91 Marking: BFR91

bf998

Abstract: bf998 mosfet tetrode application note VPS05178
Contextual Info: BF998 Silicon N-Channel MOSFET Tetrode 3
Short-channel transistor with high S/C quality factor 4
For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

bft92

Abstract: DB642
Contextual Info: BFT92 PNP Silicon RF Transistor • For broadband amplifiers up to 2 GHz at collector currents up to 20 mA. • Complementary type: BFR 92P NPN . C ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (tape and reel)

sot marking code ZS

Abstract: Transistor BFR MARKING CODE R7 RF TRANSISTOR sot-23 npn marking code VD BFR106 Transistor BFR 30 sot-23 M
Contextual Info: NPN Silicon RF Transistor BFR 106 • For low-noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers C ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code

BF998W

Abstract: 998 transistor bf998 102001 transistor BF 998
Contextual Info: BF998W Silicon N-Channel MOSFET Tetrode 3
Short-channel transistor 4 with high S/C quality factor
For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

BF998R

Abstract: 998 transistor transistor BF 998
Contextual Info: BF998R Silicon N-Channel MOSFET Tetrode
Short-channel transistor with high S/C quality factor
For low-noise, gain-controlled input stages up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF998R MRs Pin Configuration

Contextual Info: SIEMENS BFS 17W NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA BFS 17W MCs 1= B Q62702-F1645 Package O Pin Configuration II CO Marking Ordering Code LU II C\J Type SOT-323 Maximum Ratings of any single Transistor

TELEFUNKEN* U 413 B

Abstract: MAR 641 TRANSISTOR transistor MAR 439
Contextual Info: T emic BFR96T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications RF-araplifier up to GHz range specially for wide band an­ tenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR96T Marking: BFR96T

Contextual Info: SIEMENS BF 2000W Silicon N Channel MOSFET Tetrode Target data sheet • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking BF 2000W NDs Ordering Code Pin Configuration Q62702-F1772

BFR92a MARKING P2

Abstract: MAR 641 TRANSISTOR sot-23 marking RIP ha 1452 BFR92A
Contextual Info: T em ic BFR92A/BFR92AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency BFR92A Marking: + P2 Plastic case SOT 23

k d 998 0

Abstract: transistor BF 998 998 transistor bf998 EHT0730 VPS05178 BF 998
Contextual Info: BF 998 Silicon N-Channel MOSFET Tetrode 3
Short-channel transistor with high S/C quality factor 4
For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

SOT 23 CODE MCS

Abstract: transistor marking MCs Q62702-F940 bfs 11 SOT 23 marking MCS
Contextual Info: BFS 17P NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA • CECC-type available: CECC 50002/248. Type Marking Ordering Code Pin Configuration BFS 17P MCs 1=B Q62702-F940 2=E Package 3=C SOT-23 Maximum Ratings of any single Transistor

marking code g1s

Abstract: Q62702-F1129 D 998 TRANSISTOR
Contextual Info: Silicon N Channel MOSFET Tetrode BF 998 Features ● Short-channel transistor with high S/C quality factor ● For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 4 Package1) BF 998 MO