Bb515
Abstract: bf999
Text: BF 999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 999 LBs Pin Configuration 1=G 2=D Package
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VPS05161
OT-23
EHT07315
EHT07316
BB515
EHM07024
Oct-26-1999
Bb515
bf999
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BF999
Abstract: No abstract text available
Text: BF999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D Package
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BF999
VPS05161
Nov-08-2002
BF99cal
BF999
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bf998
Abstract: bf998 mosfet tetrode application note VPS05178
Text: BF998 Silicon N-Channel MOSFET Tetrode 3 Short-channel transistor with high S/C quality factor 4 For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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BF998
VPS05178
OT143
EHT07305
EHT07306
Aug-10-2001
bf998
bf998 mosfet tetrode application note
VPS05178
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k d 998 0
Abstract: transistor BF 998 998 transistor bf998 EHT0730 VPS05178 BF 998
Text: BF 998 Silicon N-Channel MOSFET Tetrode 3 Short-channel transistor with high S/C quality factor 4 For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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Original
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PDF
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VPS05178
OT-143
Res00
EHT07305
EHT07306
Oct-26-1999
k d 998 0
transistor BF 998
998 transistor
bf998
EHT0730
VPS05178
BF 998
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bb515
Abstract: BF999
Text: BF999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF999 Marking LDs 1=G Pin Configuration 2=D 3=S Package
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BF999
VPS05161
EHT07315
EHT07316
BB515
EHM07024
Jun-28-2001
bb515
BF999
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BF998W
Abstract: SOT 343 MARKING BF BF998
Text: BF998W Silicon N-Channel MOSFET Tetrode 3 Short-channel transistor 4 with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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BF998W
VPS05605
OT-343
Cha00
EHT07305
EHT07306
May-05-1999
BF998W
SOT 343 MARKING BF
BF998
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BF998W
Abstract: 998 transistor bf998 102001 transistor BF 998
Text: BF998W Silicon N-Channel MOSFET Tetrode 3 Short-channel transistor 4 with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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Original
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BF998W
VPS05605
OT343
EHT07305
EHT07306
Aug-10-2001
BF998W
998 transistor
bf998
102001
transistor BF 998
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BB515
Abstract: BF999
Text: BF999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D Package
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Original
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PDF
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BF999
VPS05161
EHT07315
EHT07316
BB515
EHM07024
Nov-08-2002
BB515
BF999
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BF998R
Abstract: 998 transistor transistor BF 998
Text: BF998R Silicon N-Channel MOSFET Tetrode Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF998R MRs Pin Configuration
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BF998R
OT143R
sold00
EHT07305
EHT07306
Aug-10-2001
BF998R
998 transistor
transistor BF 998
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Untitled
Abstract: No abstract text available
Text: S IE M E N S Silicon N Channel M O SFET Tetrode BF 998 Features • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 G H z Type Marking Ordering Code tape and reel Pin Configuration 1 2 4 3 B F 998
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OCR Scan
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62702-F1129
TheT07304
fi235bQ5
D1E174E
Q1517M3
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